SUP60030E www.vishay.com Vishay Siliconix N-Channel 80 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 80 RDS(on) (Ω) MAX. ID (A) d 0.0034 at VGS = 10 V 120 0.0036 at VGS = 7.5 V 120 Qg (TYP.) • TrenchFET® power MOSFET • Maximum 175 °C junction temperature • Very low Qgd reduces power loss from passing through Vplateau 94 • 100 % Rg and UIS tested TO-220AB • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS D • Power supply - Secondary synchronous rectification • DC/DC converter • Power tools Top View G D S G • Motor drive switch • DC/AC inverter • Battery management Ordering Information: SUP60030E-GE3 (lead (Pb)-free and halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 80 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C Pulsed Drain Current (t = 100 μs) ID IDM Avalanche Current Single Avalanche Energy a L = 0.1 mH TC = 25 °C Maximum Power Dissipation a TC = 125 °C Operating Junction and Storage Temperature Range V 120 d 120 d 250 IAS 70 EAS 245 PD UNIT 375 A mJ b 125 b W TJ, Tstg -55 to +175 °C SYMBOL LIMIT UNIT THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient (PCB Mount) c Junction-to-Case (Drain) RthJA 40 RthJC 0.4 °C/W Notes a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR4 material). d. Package limited. S15-1869-Rev. A, 10-Aug-15 Document Number: 68293 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP60030E www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage VDS VGS = 0 V, ID = 250 μA 80 - - VGS(th) VDS = VGS, ID = 250 μA 2 - 4 IGSS VDS = 0 V, VGS = ± 20 V - - ± 250 VDS = 80 V, VGS = 0 V - - 1 VDS = 80 V, VGS = 0 V, TJ = 125 °C - - 150 Zero Gate Voltage Drain Current IDSS On-State Drain Current a ID(on) Drain-Source On-State Resistance a Forward Transconductance a Dynamic V nA μA VDS = 80 V, VGS = 0 V, TJ = 175 °C - - 5 mA VDS ≥ 10 V, VGS = 10 V 120 - - A VGS = 10 V, ID = 30 A - 0.0028 0.0034 VGS = 7.5 V, ID = 20 A - 0.0030 0.0036 VDS = 15 V, ID = 30 A - 82 - - 7910 - - 3250 - RDS(on) gfs Ω S b Input Capacitance Ciss Output Capacitance Coss VGS = 0 V, VDS = 40 V, f = 1 MHz Reverse Transfer Capacitance Crss - 348 - Total Gate Charge c Qg - 94 141 Gate-Source Charge c Qgs VDS = 40 V, VGS = 10 V, ID = 20 A - 31 - - 10 - f = 1 MHz 0.28 1.4 2.8 td(on) - 24 40 tr VDD = 40 V, RL = 4 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω - 24 40 - 34 60 - 14 28 - - 250 Gate-Drain Charge c Qgd Gate Resistance Rg Turn-On Delay Time c Rise Time c Turn-Off Delay Time c Fall Time c td(off) tf pF nC Ω ns Drain-Source Body Diode Ratings and Characteristics b (TC = 25 °C) Pulsed Current (t = 100 μs) Forward Voltage a Reverse Recovery Time Peak Reverse Recovery Charge Reverse Recovery Charge ISM VSD IF = 10 A, VGS = 0 V trr IRM(REC) Qrr IF = 34 A, di/dt = 100 A/μs A - 0.8 1.5 V - 126 190 ns - 5 10 A - 0.315 0.475 μC Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1869-Rev. A, 10-Aug-15 Document Number: 68293 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP60030E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 250 VGS = 10 V thru 6 V ID - Drain Current (A) ID - Drain Current (A) TC = 25 °C 80 200 150 VGS = 5 V 100 60 TC = 125 °C 40 TC = - 55 °C 20 50 VGS = 4 V 0 0 0 1 2 3 4 0 2 4 6 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics 8 Transfer Characteristics 120 0.0040 TC = 25 °C RDS(on) - On-Resistance (Ω) gfs - Transconductance (S) 0.0035 90 TC = - 55 °C 60 TC = 125 °C 30 0.0030 VGS =7.5 V 0.0025 VGS = 10 V 0.0020 0.0015 0.0010 0 0 6 12 18 ID - Drain Current (A) 24 0 30 20 40 Transconductance 80 100 On-Resistance vs. Drain Current 11000 10 8800 VGS - Gate-to-Source Voltage (V) ID = 20 A C - Capacitance (pF) 60 ID - Drain Current (A) Ciss 6600 4400 Coss 2200 VDS = 20 V 8 VDS = 40 V 6 VDS = 64 V 4 2 Crss 0 0 0 20 40 60 VDS - Drain-to-Source Voltage (V) Capacitance S15-1869-Rev. A, 10-Aug-15 80 0 20 40 60 80 100 Qg - Total Gate Charge (nC) Gate Charge Document Number: 68293 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP60030E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 RDS(on) - On-Resistance (Normalized) 1.95 1.70 VGS = 7.5 V ID =30 A 1.45 1.20 IS - Source Current (A) TJ = 150 °C VGS = 10 V, ID =30 A 10 TJ = 25 °C 1 0.95 0.70 - 50 - 25 0 25 50 75 100 125 150 0.1 0.0 175 0.2 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 0.6 0.8 1.0 1.2 Source Drain Diode Forward Voltage 0.010 3.5 I D = 30 A ID = 250 μA 3.1 0.008 2.7 0.006 VGS(th) (V) R DS(on) - On - Resistance (Ω) 0.4 VSD - Source-to-Drain Voltage (V) T J = 125 °C 2.3 0.004 1.9 T J = 25 °C 0.002 0 1.5 1.1 3 4.5 6 7.5 - 50 9 - 25 0 25 50 75 100 TJ - Temperature (°C) VGS - Gate -to -Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage 125 150 175 Threshold Voltage 100 300 250 97 ID - Drain Current (A) VDS (V) Drain -to-Source Voltage ID = 250 μA 94 91 88 85 - 50 200 150 100 50 0 - 25 0 25 50 75 100 125 150 175 0 25 50 75 100 125 TJ - Temperature (°C) TC - Case Temperature (°C) Drain Source Breakdown vs. Junction Temperature Current De-rating S15-1869-Rev. A, 10-Aug-15 150 175 Document Number: 68293 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP60030E www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1000 100 IDAV (A) ID - Drain Current (A) 100 25 °C 10 μs ID Limited 100 μs 10 1 Limited by R DS(on)* 1 ms 0.1 150 °C IDM Limited TC = 25 °C Single Pulse 10 ms BVDSS Limited 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 0.01 Time (s) 100 ms DC 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified Single Pulse Avalanche Current Capability vs. Time Safe Operating Area Normalized Effective Transient Thermal Impedance 1 0.1 0.01 0.001 0.0001 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S15-1869-Rev. A, 10-Aug-15 Document Number: 68293 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP60030E www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 °C) - Normalized Transient Thermal Impedance Junction to Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68293. S15-1869-Rev. A, 10-Aug-15 Document Number: 68293 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220AB MILLIMETERS A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) INCHES DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 D2 12.19 12.70 0.480 0.500 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 0.115 J(1) 2.41 2.92 0.095 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 ØP 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: T14-0413-Rev. P, 16-Jun-14 DWG: 5471 Note * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM C b e J(1) e(1) D2 Document Number: 71195 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revison: 16-Jun-14 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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