SUP50020EL www.vishay.com Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) MAX. ID (A) d 0.0023 at VGS = 10 V 120 0.0028 at VGS = 4.5 V 120 Qg (TYP.) 126 nC • TrenchFET® power MOSFET • Maximum 175 °C junction temperature • Qgd/Qgs ratio < 0.25 • Operable with logic-level gate drive • 100 % Rg and UIS tested TO-220AB • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS D • Power supply - Secondary synchronous rectification • DC/DC converter • Power tools Top View G D S G • Motor drive switch • DC/AC inverter • Battery management Ordering Information: SUP50020EL-GE3 (lead (Pb)-free and halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C Pulsed Drain Current (t = 100 μs) Avalanche Current Single Avalanche Energy a Maximum Power Dissipation a Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 °C TC = 125 °C ID V 120 d 120 d IDM 300 IAS 75 EAS 281 PD UNIT 375 A mJ b 125 b W TJ, Tstg -55 to +175 °C UNIT THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT Junction-to-Ambient (PCB Mount) c RthJA 40 Junction-to-Case (Drain) RthJC 0.4 °C/W Notes a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR4 material). d. Package limited. S15-1868-Rev. A, 10-Aug-15 Document Number: 68273 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP50020EL www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 60 - - VGS(th) VDS = VGS, ID = 250 μA 1.2 - 2.5 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 250 VDS = 60 V, VGS = 0 V - - 1 Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V, TJ = 125 °C - - 150 VDS = 60 V, VGS = 0 V, TJ = 175 °C - - 5 mA VDS ≥ 10 V, VGS = 10 V 120 - - A VGS = 10 V, ID = 30 A - 0.0019 0.0023 VGS = 4.5 V, ID = 20 A - 0.0023 0.0028 VDS = 15 V, ID = 30 A - 145 - - 11 113 - Gate Threshold Voltage On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Dynamic ID(on) RDS(on) gfs V nA μA Ω S b Input Capacitance Ciss Output Capacitance Coss - 4625 - Reverse Transfer Capacitance Crss - 475 - Total Gate Charge c Qg - 126 - Gate-Source Charge c Gate-Drain Charge c Qgs VGS = 0 V, VDS = 30 V, f = 1 MHz VDS = 30 V, VGS = 10 V, ID = 20 A - 31.2 - - 7.1 - f = 1 MHz 0.32 1.6 3.2 td(on) - 15 30 tr VDD = 30 V, RL = 5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω - 20 40 - 55 100 - 11 20 - - 300 Qgd Gate Resistance Rg Turn-On Delay Time c Rise Time c Turn-Off Delay Time c Fall Time c td(off) tf Drain-Source Body Diode Ratings and Characteristics Pulsed Current (t = 100 μs) Forward Voltage a Reverse Recovery Time Peak Reverse Recovery Charge Reverse Recovery Charge b IF = 10 A, VGS = 0 V trr IRM(REC) Qrr nC Ω ns (TC = 25 °C) ISM VSD pF IF = 39 A, di/dt = 100 A/μs A - 0.8 1.5 V - 120 180 ns - 5 10 A - 0.287 0.430 μC Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1868-Rev. A, 10-Aug-15 Document Number: 68273 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP50020EL www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 200 VGS = 10 V thru 4 V 80 ID - Drain Current (A) ID - Drain Current (A) 150 100 TC = 25 °C 60 TC = 125 °C 40 VGS =3V 50 20 0 TC = - 55 °C 0 0 1 2 3 4 5 0 1 VDS - Drain-to-Source Voltage (V) 200 4 0.0030 RDS(on) - On-Resistance (Ω) TC = 25 °C 150 TC = - 55 °C 100 TC = 125 °C 50 0.0025 VGS =4.5V 0.0020 VGS = 10 V 0.0015 0.0010 0 0 6 12 18 24 0 30 20 40 60 80 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 14000 100 10 ID = 20 A VGS - Gate-to-Source Voltage (V) Ciss 10500 C - Capacitance (pF) 3 Transfer Characteristics Output Characteristics gfs - Transconductance (S) 2 VGS - Gate-to-Source Voltage (V) 7000 Coss 3500 VDS = 30 V 8 VDS = 15 V 6 VDS = 48 V 4 2 Crss 0 0 0 15 30 45 VDS - Drain-to-Source Voltage (V) Capacitance S15-1868-Rev. A, 10-Aug-15 60 0 35 70 105 140 Qg - Total Gate Charge (nC) Gate Charge Document Number: 68273 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP50020EL www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1.90 2.4 1.65 2 VGS = 10 V, ID = 30 A VGS(th) (V) RDS(on) - On-Resistance (Normalized) ID = 250 μA 1.40 1.15 1.6 1.2 VGS = 4.5 V, ID = 20 A 0.8 0.90 0.65 -50 -25 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 0.4 - 50 175 - 25 0 25 75 100 125 150 175 125 150 175 Threshold Voltage On-Resistance vs. Junction Temperature 0.006 74 ID = 250 μA VDS (V) Drain -to-Source Voltage I D = 30 A RDS(on) - On-Resistance (Ω) 50 TJ - Temperature (°C) 0.004 TJ = 125 °C TJ = 25 °C 0.002 1.5 3 4.5 6 7.5 VGS - Gate -to -Source Voltage (V) 70 68 66 64 - 50 0 0 72 9 - 25 0 25 50 75 100 TJ - Temperature (°C) Drain Source Breakdown vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage 100 312 ID - Drain Current (A) IS - Source Current (A) 260 TJ = 150 °C 10 TJ = 25 °C 1 208 156 104 52 0 0.1 0.0 0.2 0.4 0.6 0.8 1.0 VSD - Source- to- Drain Voltage (V) Source Drain Diode Forward Voltage S15-1868-Rev. A, 10-Aug-15 1.2 0 25 50 75 100 125 150 175 TC - Case Temperature (°C) Current De-rating Document Number: 68273 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP50020EL www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1000 100 IDM Limited 100 us ID Limited 10 1 ms 10 ms Limited by RDS(on)* 1 IDAV (A) ID - Drain Current (A) 100 25 °C 100 ms DC 0.1 150 °C TC = 25 °C Single Pulse BVDSS Limited 0.01 0.1 10 0.00001 1 10 100 VDS - Drain- to- Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified 0.0001 0.001 0.01 Time (s) Safe Operating Area Single Pulse Avalanche Current Capability vs. Time Normalized Effective Transient Thermal Impedance 1 0.1 0.01 0.001 0.0001 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S15-1868-Rev. A, 10-Aug-15 Document Number: 68273 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP50020EL www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 °C) - Normalized Transient Thermal Impedance Junction to Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68273. S15-1868-Rev. A, 10-Aug-15 Document Number: 68273 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220AB MILLIMETERS A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) INCHES DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 D2 12.19 12.70 0.480 0.500 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 0.115 J(1) 2.41 2.92 0.095 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 ØP 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: T14-0413-Rev. P, 16-Jun-14 DWG: 5471 Note * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM C b e J(1) e(1) D2 Document Number: 71195 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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