SUP40010EL www.vishay.com Vishay Siliconix N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) MAX. ID (A) d 0.0018 at VGS = 10 V 120 0.0021 at VGS = 4.5 V 120 Qg (TYP.) 150 • TrenchFET® power MOSFET • Maximum 175 °C junction temperature • Qgd/Qgs ratio < 0.5 • Operable with logic-level gate drive • 100 % Rg and UIS tested TO-220AB • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS D • Power supply - Secondary synchronous rectification Top View G D • DC/DC converter S • Power tools G • Motor drive switch Ordering Information: SUP40010EL-GE3 (lead (Pb)-free and halogen-free) • DC/AC inverter • Battery management S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C Pulsed Drain Current (t = 100 μs) Avalanche Current Single Avalanche Energy L = 0.1 mH a TC = 25 °C Maximum Power Dissipation a TC = 125 °C Operating Junction and Storage Temperature Range ID 120 d 300 IAS 80 PD V 120 d IDM EAS UNIT 320 375 b 125 b A mJ W TJ, Tstg -55 to +175 °C SYMBOL LIMIT UNIT THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient (PCB Mount) c Junction-to-Case (Drain) RthJA 40 RthJC 0.4 °C/W Notes a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR4 material). d. Package limited. S15-2184-Rev. A, 14-Sep-15 Document Number: 66964 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP40010EL www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage VDS VGS = 0 V, ID = 250 μA 40 - - VGS(th) VDS = VGS, ID = 250 μA 1.2 - 2.5 IGSS VDS = 0 V, VGS = ± 20 V - - ± 250 VDS = 40 V, VGS = 0 V - - 1 VDS = 40 V, VGS = 0 V, TJ = 125 °C - - 150 Zero Gate Voltage Drain Current IDSS On-State Drain Current a ID(on) Drain-Source On-State Resistance a Forward Transconductance a V nA μA VDS = 40 V, VGS = 0 V, TJ = 175 °C - - 5 mA VDS ≥ 10 V, VGS = 10 V 120 - - A VGS = 10 V, ID = 30 A - 0.00147 0.00180 VGS = 4.5 V, ID = 20 A - 0.00172 0.00210 VDS = 15 V, ID = 30 A - 174 - - 11 155 - - 7410 - - 880 230 RDS(on) gfs Ω S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge c Qg Gate-Source Charge c Qgs Gate-Drain Charge c Qgd Gate Resistance VDS = 20 V, VGS = 10 V, ID = 20 A Rg Turn-On Delay Time c Rise Time c Turn-Off Delay Time VGS = 0 V, VDS = 30 V, f = 1 MHz tr c Fall Time c f = 1 MHz td(on) td(off) VDD = 20 V, RL = 5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω tf - 150 - 32 - - 11 - 0.32 1.6 3.2 - 16 32 - 20 40 - 65 100 - 17 35 pF nC Ω ns Drain-Source Body Diode Ratings and Characteristics b (TC = 25 °C) Pulsed Current (t = 100 μs) ISM Forward Voltage a VSD Reverse Recovery Time Peak Reverse Recovery Charge Reverse Recovery Charge IF = 10 A, VGS = 0 V trr IRM(REC) Qrr IF = 41 A, di/dt = 100 A/μs - - 300 - 0.8 1.5 A V - 135 203 ns - 5 10 A - 0.34 0.51 μC Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-2184-Rev. A, 14-Sep-15 Document Number: 66964 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP40010EL www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 160 200 VGS = 10 V thru 4 V 120 100 ID - Drain Current (A) ID - Drain Current (A) 150 VGS = 3 V 50 TC = 25 °C 80 TC = 125 °C TC = - 55 °C 40 0 0 0.5 1 1.5 2 2.5 0 3 0 1 VDS - Drain-to-Source Voltage (V) 2 3 4 VGS - Gate-to-Source Voltage (V) 5 Transfer Characteristics Output Characteristics 0.003 300 TC = 25 °C 0.0025 TC = - 55 °C RDS(on) - On-Resistance (Ω) gfs - Transconductance (S) 240 180 TC = 125 °C 120 60 0.002 VGS =4.5 V 0.0015 VGS = 10 V 0.001 0.0005 0 0 0 10 20 30 40 50 0 20 40 80 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 18 000 100 10 VDS = 10 V VGS - Gate-to-Source Voltage (V) ID = 20 A 13 500 C - Capacitance (pF) 60 ID - Drain Current (A) C iss 9000 Coss 4500 Crss 0 8 VDS = 20 V 6 VDS = 32 V 4 2 0 0 10 20 30 VDS - Drain-to-Source Voltage (V) Capacitance S15-2184-Rev. A, 14-Sep-15 40 0 40 80 120 Qg - Total Gate Charge (nC) 160 Gate Charge Document Number: 66964 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP40010EL www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1.7 2.3 1.9 1.45 VGS(th) (V) RDS(on) - On-Resistance (Normalized) ID = 250 μA VGS = 10 V, ID = 30 A 1.2 VGS = 4.5 V, ID = 30 A 1.5 1.1 0.95 0.7 0.7 - 50 - 25 0 25 50 75 100 125 150 0.3 - 50 - 25 175 0 75 100 125 150 175 125 150 175 51 0.005 ID = 250 μA VDS (V) Drain-to-Source Voltage ID = 30 A 0.004 RDS(on) - On-Resistance (Ω) 50 Threshold Voltage On-Resistance vs. Junction Temperature 0.003 TJ = 125 °C 0.002 TJ = 25 °C 0.001 0 0 2 4 6 8 49 47 45 43 - 50 10 - 25 VGS - Gate-to-Source Voltage (V) 0 25 50 75 100 TJ - Temperature (°C) Drain Source Breakdown vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage 440 100 330 TJ = 150 °C ID - Drain Current (A) IS - Source Current (A) 25 TJ - Temperature (°C) TJ - Junction Temperature (°C) 10 TJ = 25 °C 1 220 110 0 0.1 0.0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Source Drain Diode Forward Voltage S15-2184-Rev. A, 14-Sep-15 1.2 0 25 50 75 100 125 150 175 TC - Case Temperature (°C) Current De-rating Document Number: 66964 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP40010EL www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1000 1000 IDM Limited 100 μs ID Limited Limited by RDS(on)* 10 IDAV (A) ID - Drain Current (A) 100 1 ms 100 10 ms 100 ms, DC DC 1 0.1 0.1 150 °C BVDSS Limited TC = 25 °C Single Pulse 10 0.00001 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 0.0001 0.001 25 °C 0.01 Time (s) Safe Operating Area Single Pulse Avalanche Current Capability vs. Time Normalized Effective Transient Thermal Impedance 1 0.1 0.01 0.001 0.0001 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S15-2184-Rev. A, 14-Sep-15 Document Number: 66964 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP40010EL www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 °C) - Normalized Transient Thermal Impedance Junction to Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?66964. S15-2184-Rev. A, 14-Sep-15 Document Number: 66964 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220AB MILLIMETERS A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) INCHES DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 D2 12.19 12.70 0.480 0.500 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 0.115 J(1) 2.41 2.92 0.095 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 ØP 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: T14-0413-Rev. P, 16-Jun-14 DWG: 5471 Note * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM C b e J(1) e(1) D2 Document Number: 71195 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revison: 16-Jun-14 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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