SUP45P03-09 www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) -30 RDS(on) (Ω) MAX. ID (A) d 0.0087 at VGS = -10 V -45 0.0150 at VGS = -4.5 V -45 Qg (TYP.) • TrenchFET® power MOSFET • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 60 TO-220AB APPLICATIONS S • Power switch • Load switch in high current applications • DC/DC converters Top View G D G S D P-Channel MOSFET Ordering Information: SUP45P03-09-GE3 (lead (Pb)-free and halogen-free) ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) SYMBOL LIMIT Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ± 20 PARAMETER Continuous Drain Current (TJ = 150 °C) d TC = 25 °C TC = 70 °C Pulsed Drain Current (t = 100 μs) Avalanche Current Single Avalanche Energy a Maximum Power Dissipation a Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 °C TA = 25 °C c ID -45 -100 IAS -35 PD V -45 IDM EAS UNIT 61 73.5 b 3.1 A mJ W TJ, Tstg -55 to +150 °C UNIT THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT Junction-to-Ambient (PCB Mount) c RthJA 40 Junction-to-Case (Drain) RthJC 1.7 °C/W Notes a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR4 material). d. Package limited. S15-1158-Rev. A, 18-May-15 Document Number: 74702 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP45P03-09 www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a VDS VGS = 0 V, ID = -250 μA -30 - - VGS(th) VDS = VGS, ID = -250 μA -1 - -2.5 IGSS VDS = 0 V, VGS = ± 20 V - - ± 250 VDS = -30 V, VGS = 0 V - - -1 VDS = -30 V, VGS = 0 V, TJ = 125 °C - - -50 VDS = -30 V, VGS = 0 V, TJ = 150 °C - - -250 VDS ≤ -10 V, VGS = -10 V -50 - - VGS = -10 V, ID = -20 A - 0.0072 0.0087 VGS = -4.5 V, ID = -15 A - 0.0125 0.0150 VDS = -15 V, ID = -20 A - 45 - - 2700 - - 515 - - 445 - IDSS ID(on) RDS(on) gfs V nA μA A Ω S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge c Qg Gate-Source Charge c Qgs Gate-Drain Charge c Qgd VGS = 0 V, VDS = -15 V, f = 1 MHz pF - 60 90 - 9.3 - - 15 - 0.5 2.5 5 - 12 20 - 11 20 - 40 60 - 12 20 IS - - -45 Pulsed Current (t = 100 μs) ISM - - -100 Forward Voltage a VSD - -0.8 -1.5 V - 27 40 ns - 1.3 2 A - 20 30 nC Gate Resistance Rg Turn-On Delay Time c Rise Time c Turn-Off Delay Time VDS = -15 V, VGS = -10 V, ID = -20 A tr c Fall Time c f = 1 MHz td(on) td(off) VDD = -15 V, RL = 1.5 Ω ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω tf Drain-Source Body Diode Ratings and Characteristics Continuous Current Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge b Qrr Ω ns (TC = 25 °C) IF = -10 A, VGS = 0 V trr IRM(REC) nC IF = -10 A, dI/dt = 100 A/μs A Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1158-Rev. A, 18-May-15 Document Number: 74702 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP45P03-09 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.020 I D - Drain Current (A) 60 R DS(on) - On-Resistance (Ω) VGS = 10 V thru 5 V 80 VGS = 4 V 40 20 0.015 VGS = 4.5 V 0.010 VGS = 10 V 0.005 VGS = 3 V 0.000 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) 0 40 60 ID - Drain Current (A) Output Characteristics On-Resistance vs. Drain Current 5 0.05 4 0.04 R DS(on) - On-Resistance (Ω) I D - Drain Current (A) 0 0.0 3 2 TC = 25 °C 1 20 100 0.03 0.02 TJ = 150 °C 0.01 TC = 125 °C TJ = 25 °C TC = - 55 °C 0 0 80 1 2 3 VGS - Gate-to-Source Voltage (V) 0.00 4 2 Transfer Characteristic 4 6 8 VGS - Gate-to-Source Voltage (V) 10 On-Resistance vs. Gate-to-Source Voltage 10 75 ID = 20 A VGS - Gate-to-Source Voltage (V) g fs - Transconductance (S) TC = - 55 °C 60 TC = 25 °C 45 TC = 125 °C 30 15 8 VDS = 15 V 6 VDS = 8 V VDS = 24 V 4 2 0 0 0 10 20 30 40 50 0 20 40 60 ID - Drain Current (A) Qg - Total Gate Charge (nC) Transconductance Gate Charge S15-1158-Rev. A, 18-May-15 80 Document Number: 74702 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP45P03-09 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) - 1.0 100 VGS(th) (V) I S - Source Current (A) - 1.3 TJ = 150 °C 10 TJ = 25 °C ID = 250 µA - 1.6 1 - 1.9 0.1 0.0 0.3 0.6 0.9 VSD - Source-to-Drain Voltage (V) - 2.2 - 50 1.2 - 25 0 Source-Drain Diode Forward Voltage 150 125 150 - 33 VDS - Drain-to-Source Voltage (V) Ciss 3000 C - Capacitance (pF) 125 Threshold Voltage 4000 2000 1000 Coss Crss 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) ID = 250 µA - 34 - 35 - 36 - 37 - 50 0 30 Capacitance - 25 0 25 50 75 100 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature 1.8 90 ID = 20 A 75 VGS = 10 V 1.5 ID - Drain Current (A) R DS(on) - On-Resistance (Normalized) 25 50 75 100 TJ - Temperature (°C) 1.2 VGS = 4.5 V 60 45 Package Limited 30 0.9 15 0.6 - 50 0 - 25 0 25 50 75 100 125 150 0 25 50 75 100 TJ - Junction Temperature (°C) TC - Case Temperature (°C) On-Resistance vs. Junction Temperature Current Derating S15-1158-Rev. A, 18-May-15 125 150 Document Number: 74702 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP45P03-09 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 1000 TJ = 25 °C TJ = 150 °C 10 ID - Drain Current (A) I DAV (A) 100 100 μs 10 Limited by RDS(on)* 1 1 ms DC, 10 s 1 s, 100 ms, 10 ms 0.1 TC = 25 C ° Single Pulse BVDSS Limited 0.01 1 10-5 10-4 10-2 10-3 Time (s) 10-1 0.1 1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Single Pulse Avalanche Current Capability vs. Time Safe Operating Area 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 Single Pulse, 0.02 0.1 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74702 S15-1158-Rev. A, 18-May-15 Document Number: 74702 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220AB MILLIMETERS A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) INCHES DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 D2 12.19 12.70 0.480 0.500 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 0.115 J(1) 2.41 2.92 0.095 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 ØP 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: T14-0413-Rev. P, 16-Jun-14 DWG: 5471 Note * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM C b e J(1) e(1) D2 Document Number: 71195 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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