New Product Si4154DY Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0033 at VGS = 10 V 36 0.0039 at VGS = 4.5 V 33 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 32.5 nC APPLICATIONS • POL • Synchronous Rectification SO-8 D S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET Ordering Information: SI4154DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Limit 40 ± 20 36 26 ID Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy TC = 25 °C TA = 25 °C IS L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range V 24b, c 19b, c 70 7.0 IDM Pulsed Drain Current Unit A 3.1b, c 40 mJ 80 7.8 5.0 PD W 3.5b, c 2.2b, c - 55 to 150 TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter b, d t ≤ 10 s Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) Steady State Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 80 °C/W. Document Number: 65000 S09-0998-Rev. A, 01-Jun-09 Symbol RthJA RthJF Typical 29 13 Maximum 35 16 Unit °C/W www.vishay.com 1 New Product Si4154DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 40 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage V 45 ID = 250 µA mV/°C - 5.6 VGS(th) VDS = VGS , ID = 250 µA 2.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V 1 VDS = 40 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS ≥ 5 V, VGS = 10 V 1.0 30 µA A VGS = 10 V, ID = 15 A 0.0027 0.0033 VGS = 4.5 V, ID = 10 A 0.0032 0.0039 VDS = 15 V, ID = 15 A 75 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Rg Gate Resistance 4230 VDS = 20 V, VGS = 0 V, f = 1 MHz VDS = 20 V, VGS = 10 V, ID = 20 A tr Rise Time td(off) Turn-Off Delay Time Fall Time Turn-On Delay Time 49 nC 8.6 f = 1 MHz VDD = 20 V, RL = 2 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 0.3 1.25 2.5 25 50 70 120 90 35 60 td(on) 10 20 VDD = 20 V, RL = 2 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω tf Fall Time 105 51 td(off) Turn-Off Delay Time 70 32.5 tf tr Rise Time pF 9.7 VDS = 20 V, VGS = 4.5 V, ID = 20 A td(on) Turn-On Delay Time 570 220 9 18 35 60 7 14 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage IS TC = 25 °C 7.0 ISM VSD 70 IS = 3 A 0.71 1.1 A V Body Diode Reverse Recovery Time trr 33 65 ns Body Diode Reverse Recovery Charge Qrr 29 56 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C 17 16 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 65000 S09-0998-Rev. A, 01-Jun-09 New Product Si4154DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 70 VGS = 3 V VGS = 10 V thru 4 V 8 I D - Drain Current (A) I D - Drain Current (A) 56 42 28 6 4 TC = 25 °C 2 14 TC = 125 °C TC = - 55 °C 0 0.0 0 0.5 1.0 1.5 2.0 0 2.5 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.0045 5500 0.0040 4400 0.0035 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) Ciss VGS = 4.5 V 0.0030 VGS = 10 V 3300 2200 0.0025 1100 0.0020 0 Coss Crss 0 14 28 42 56 0 70 6 ID - Drain Current (A) 12 30 Capacitance 2.0 10 ID = 20 A ID = 15 A VDS = 20 V 1.7 8 VDS = 10 V 6 VDS = 30 V 4 VGS = 10 V (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 24 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 1.4 VGS = 4.5 V 1.1 0.8 2 0 0.0 18 14.4 28.8 43.2 57.6 Qg - Total Gate Charge (nC) Gate Charge Document Number: 65000 S09-0998-Rev. A, 01-Jun-09 72.0 0.5 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product Si4154DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.030 100 ID = 15 A I S - Source Current (A) 10 R DS(on) - On-Resistance (Ω) TJ = 150 °C TJ = 25 °C 1 0.1 0.01 0.001 0.0 0.024 0.018 0.012 TJ = 125 °C 0.006 TJ = 25 °C 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 1 VSD - Source-to-Drain Voltage (V) 3 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.5 200 0.2 160 Power (W) VGS(th) Variance (V) 2 - 0.1 ID = 5 mA - 0.4 120 80 ID = 250 µA - 0.7 - 1.0 - 50 40 0 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 Time (s) TJ - Temperature (°C) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 I D - Drain Current (A) Limited by RDS(on)* 1 ms 10 10 ms 1 100 ms 1s 10 s 0.1 TA = 25 °C Single Pulse 0.01 0.01 0.1 BVDSS Limited 1 DC 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 65000 S09-0998-Rev. A, 01-Jun-09 New Product Si4154DY Vishay Siliconix 40 10 32 8 24 6 Power (W) I D - Drain Current (A) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 16 4 2 8 0 0 0 25 50 75 100 125 0 150 25 TC - Case Temperature (°C) 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* Power Derating, Junction-to-Foot 2.0 Power (W) 1.6 1.2 0.8 0.4 0.0 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 65000 S09-0998-Rev. A, 01-Jun-09 www.vishay.com 5 New Product Si4154DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 80 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -3 4. Surface Mounted 10 -2 10 -1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65000. www.vishay.com 6 Document Number: 65000 S09-0998-Rev. A, 01-Jun-09 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1