New Product SiE878DF Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0052 at VGS = 10 V 45 0.0068 at VGS = 4.5 V 45 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen III Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling • Leadframe-Based New Encapsulated Package - Die Not Exposed - Same Layout Regardless of Die Size • Low Qgd/Qgs Ratio Helps Prevent Shoot-Through • 100 % Rg and UIS Tested • Compliant to RoHS directive 2002/95/EC Qg (Typ.) 11.2 nC Package Drawing www.vishay.com/doc?68797 PolarPAK 10 D 9 G 8 S 7 S 6 D 6 7 8 9 10 APPLICATIONS D D 1 G 2 S S 3 4 Top View D D 5 5 S 4 G 3 2 • • • • D D VRM, POL DC/DC Conversion Server High-Side Switch G 1 S Bottom View N-Channel MOSFET Top surface is connected to pins 1, 5, 6, and 10 For Related Documents Ordering Information: SiE878DF-T1-GE3 (Lead (Pb)-free) and Halogen-free www.vishay.com/ppg?65456 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current ID IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Avalanche Energy L = 0.1 mH IAS EAS Limit 25 ± 20 45a 42.5 24b, c 19b, c 100 20.8 4.3b, c 25 31 25 16 5.2b, c 3.3b, c - 55 to 150 260 Unit V A mJ TC = 25 °C TC = 70 °C PD Maximum Power Dissipation W TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg °C Soldering Recommendations (Peak Temperature)d, e Notes: a. TC = 25 °C. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 65456 S09-2034-Rev. A, 05-Oct-09 www.vishay.com 1 New Product SiE878DF Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol RthJA RthJC (Drain) RthJC (Source) t ≤ 10 s Maximum Junction-to-Ambienta, b Maximum Junction-to-Case (Drain Top) Steady State Maximum Junction-to-Case (Source)a, c Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 68 °C/W. c. Measured at source pin (on the side of the package). Typical 20 4 5.5 Maximum 24 5 7 Unit °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VGS = 0 V, ID = 250 µA 25 Gate-Source Threshold Voltage Gate-Source Leakage VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Drain-Source On-State Resistance a Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf ID = 250 µA VDS = VGS , ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 25 V, VGS = 0 V VDS = 25 V, VGS = 0 V, TJ = 55 °C VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 4.5 V, ID = 20 A VDS = 15 V, ID = 20 A 1 VDS = 12.5 V, VGS = 4.5 V, ID = 20 A VDD = 12.5 V, RL = 1.25 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω TC = 25 °C IS ISM Pulse Diode Forward Currenta IS = 10 A VSD Body Diode Voltage trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C ta Reverse Recovery Fall Time tb Reverse Recovery Rise Time Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. 2.2 ± 100 1 10 0.2 V nA µA A 0.0042 0.0055 74 VDS = 12.5 V, VGS = 10 V, ID = 20 A VDD = 12.5 V, RL = 1.25 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω mV/°C 25 VDS = 12.5 V, VGS = 0 V, f = 1 MHz f = 1 MHz V 25 -5 1400 400 145 24 11.2 4.2 3 1.2 15 15 22 12 10 10 20 10 0.8 30 24 14 16 0.0052 0.0068 Ω S pF 36 17 2.4 25 25 35 20 15 15 30 15 20.8 60 1.2 45 36 nC Ω ns A V ns nC ns Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 65456 S09-2034-Rev. A, 05-Oct-09 New Product SiE878DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 120 20 100 16 ID- Drain Current (A) ID- Drain Current (A) VGS = 10 V thru 4 V 80 60 VGS = 3 V 40 TC = 125 °C 12 TC = 25 °C 8 4 20 TC = - 55 °C 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.007 3.0 2000 Ciss VGS = 4.5 V 1600 0.006 C - Capacitance(pF) RDS(on) - On-Resistance (Ω) 0.5 0.005 VGS = 10 V 1200 Coss 800 0.004 400 Crss 0 0.003 0 20 40 60 80 0 100 5 10 20 25 VDS - Drain-to-Source Voltage (V) ID- Drain Current (A) On-Resistance vs. Drain Current Capacitance 10 1.8 ID = 20 A ID = 20 A 1.6 8 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 15 VDS=12.5V 6 VDS = 6.3V VDS = 20 V 4 2 1.4 1.2 VGS = 10 V 1.0 0.8 0 0 5 10 15 Qg - Total Gate Charge (nC) Gate Charge Document Number: 65456 S09-2034-Rev. A, 05-Oct-09 20 25 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product SiE878DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.020 100 ID = 20 A TJ = 100 °C RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0.016 TJ = 25 °C 10 1 0.0 0.012 TJ = 125 °C 0.008 0.004 TJ = 25 °C 0.000 0.2 0.4 0.6 0.8 1.0 0 1.2 1 2 3 4 5 6 7 8 9 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.0 50 1.8 40 ID = 250 µA Power (W) V GS(th) (V) 1.6 1.4 30 20 1.2 10 1.0 0.8 - 50 - 25 0 25 50 75 100 125 150 0 0.01 0.1 1 10 100 1000 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* 100 µs ID - Drain Current (A) 10 1 ms 10 ms 1 100 ms 1s 10 s 0.1 DC TA = 25 °C Single Pulse 0.01 0.01 BVDSS 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 65456 S09-2034-Rev. A, 05-Oct-09 New Product SiE878DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 25 60 20 Package Limited 40 Power (W) ID - Drain Current (A) 50 30 15 10 20 5 10 0 0 0 50 25 75 100 TA - Ambient Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating, Junction-to-Case * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 65456 S09-2034-Rev. A, 05-Oct-09 www.vishay.com 5 New Product SiE878DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 68 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 Square Wave Pulse Duration (s) 10 -1 1 Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Source Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65456. www.vishay.com 6 Document Number: 65456 S09-2034-Rev. A, 05-Oct-09 Package Information Vishay Siliconix POLARPAK™ OPTION U M4 M1 M4 E1 E T2 T4 T1 T3 T5 θ M2 M3 θ T5 T3 M3 View A c (Top View) A θ A1 θ D1 D DETAIL Z b5 b5 b5 0.127 0.254 P1 0.381 A K1 K2 P1 K3 K4 0.254 P1 0.203 0.332 K3 0.584 P1 K4 A H1 H4 b1 b4 b4 b3 H3 H2 b2 H1 b1 View A (Bottom View) Document Number: 68797 Revision: 11-Aug-08 www.vishay.com 1 Package Information Vishay Siliconix MILLIMETERS INCHES DIM MIN. NOM. MAX. MIN. NOM. MAX. A 0.75 0.80 0.85 0.030 0.031 0.033 A1 0.00 - 0.05 0.000 - 0.002 b1 0.48 0.58 0.68 0.019 0.023 0.027 b2 0.41 0.51 0.61 0.016 0.020 0.024 b3 2.19 2.29 2.39 0.086 0.090 0.094 b4 0.89 1.04 1.19 0.035 0.041 0.047 b5 0.23 0.33 0.43 0.009 0.013 0.017 c 0.20 0.25 0.30 0.008 0.010 0.012 D 6.00 6.15 6.30 0.236 0.242 0.248 D1 5.74 5.89 6.04 0.226 0.232 0.238 E 5.01 5.16 5.31 0.197 0.203 0.209 E1 4.75 4.90 5.05 0.187 0.193 0.199 H1 0.23 - - 0.009 - - H2 0.45 - 0.56 0.018 - 0.022 H3 0.31 0.41 0.51 0.012 0.016 0.020 H4 0.45 - 0.56 0.018 - 0.022 K1 4.22 4.37 4.52 0.166 0.172 0.178 K2 1.62 1.67 1.72 0.064 0.066 0.068 K3 1.16 - - 0.046 - - K4 0.24 - - 0.009 - - M1 4.30 4.50 4.70 0.169 0.177 0.185 M2 3.43 3.58 3.73 0.135 0.141 0.147 M3 0.22 - - 0.009 - - M4 0.05 - - 0.002 - - P1 0.15 0.20 0.25 0.006 0.008 0.010 T1 3.48 3.64 4.10 0.137 0.143 0.161 T2 0.56 0.76 0.95 0.022 0.030 0.037 T3 1.20 - - 0.047 - - T4 3.90 - - 0.153 - - T5 0 0.18 0.36 0.000 0.007 0.014 θ 0° 10° 12° 0° 10° 12° ECN: T-08441-Rev. A, 11-Aug-08 DWG: 5966 Notes Millimeters govern over inches. www.vishay.com 2 Document Number: 68797 Revision: 11-Aug-08 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PolarPAK® Option L and S 7.300 (0.287) 0.510 (0.020) 0.510 (0.020) 0.410 (0.016) 0.955 (0.038) 0.955 (0.038) 4.520 (0.178) 6.310 (0.248) 0.895 (0.035) + 0.895 (0.035) 2.290 (0.090) 0.580 (0.023) 0.580 (0.023) 0.510 (0.020) APPLICATION NOTE Recommended Minimum for PolarPAK Option L and S Dimensions in mm/(Inches) No External Traces within Broken Lines Dot indicates Gate Pin (Part Marking) Return to Index www.vishay.com 6 Document Number: 73491 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000