Si4100DY Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.063 at VGS = 10 V 6.8 0.084 at VGS = 6 V 5.8 VDS (V) 100 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % UIS Tested Qg (Typ.) 9 nC APPLICATIONS • High Frequency Boost Converter • LED Backlight for LCD TV SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D D G Top View S Ordering Information: Si4100DY-T1-E3 (Lead (Pb)-free) Si4100DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID TC = 25 °C TA = 25 °C IS Single Avalanche Current Single Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Operating Junction and Storage Temperature Range Unit V 4.4a, b 3.5a, b 20 5 IDM Pulsed Drain Current Continuous Source-Drain Diode Current Limit 100 ± 20 6.8 5.4 A 2.1a, b 19 18 6 3.8 2.5a, b 1.6a, b - 55 to 150 TJ, Tstg mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, c t ≤ 10 s Symbol RthJA Typical 37 Maximum 50 Maximum Junction-to-Foot (Drain) Steady State RthJF 17 21 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 85 °C/W. d. TC = 25 °C. Document Number: 69251 S09-0220-Rev. B, 09-Feb-09 www.vishay.com 1 Si4100DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 100 Typ. Max. Unit Static Drain-Source Breakdown Voltage ΔVDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS , ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V 120 mV/°C -9 2 4.5 V ± 100 nA VDS = 100 V, VGS = 0 V 1 VDS = 100 V, VGS = 0 V, TJ = 55 °C 10 VDS ≥ 5 V, VGS = 10 V 20 µA A VGS = 10 V, ID = 4.4 A 0.051 0.063 VGS = 6 V, ID = 3.8 A 0.069 0.084 VDS = 15 V, ID = 4.4 A 10 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Rg 600 VDS = 50 V, VGS = 0 V, f = 1 MHz VDS = 50 V, VGS = 10 V, ID = 4.4 A VDS = 50 V, VGS = 6 V, ID = 4.4 A td(off) pF 13.5 20 9 13.5 3 f = 1 MHz VDD = 50 V, RL = 14.3 Ω ID ≅ 3.5 A, VGEN = 6 V, Rg = 1 Ω Ω 1 15 25 12 20 12 20 tf 10 15 td(on) 10 15 12 20 15 25 10 15 tr td(off) nC 4.6 td(on) tr 90 50 VDD = 50 V, RL = 14.3 Ω ID ≅ 3.5 A, VGEN = 10 V, Rg = 1 Ω tf ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 5 20 IS = 3.5 A, VGS = 0 V IF = 3.5 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.8 1.2 V 45 70 ns 80 120 nC 33 12 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 69251 S09-0220-Rev. B, 09-Feb-09 Si4100DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 20 6V VGS = 10 V thru 7 V 16 ID - Drain Current (A) ID - Drain Current (A) 16 12 8 12 8 TC = 125 °C 5V 4 4 25 °C - 55 °C 4V 0 0 0 1 2 3 4 5 0 2 4 5 6 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 7 1000 800 C - Capacitance (pF) 0.16 0.12 VGS = 6 V 0.08 VGS = 10 V Ciss 600 400 Coss 200 0.04 Crss 0 0.00 0 4 8 12 16 0 20 20 40 60 80 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Capacitance On-Resistance vs. Drain Current 10 2.2 ID = 4.4 A 2.0 8 VDS = 50 V 6 VGS = 6 V, 10 V ID = 4.4 A 1.8 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 3 VDS - Drain-to-Source Voltage (V) 0.20 RDS(on) - On-Resistance (Ω) 1 VDS = 80 V 4 1.6 1.4 1.2 1.0 0.8 2 0.6 0 0 3 6 9 Qg - Total Gate Charge (nC) Gate Charge Document Number: 69251 S09-0220-Rev. B, 09-Feb-09 12 15 0.4 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si4100DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.14 20 ID = 4.4 A TJ = 150 °C RDS(on) - On-Resistance (W) 0.12 I S - Source Current (A) 10 TJ = 25 °C TA = 125 °C 0.10 0.08 TA = 25 °C 0.06 0.04 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 4 1.2 7 8 9 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage 10 50 3.6 40 3.2 Power (W) VGS(th) (V) 6 Source-Drain Diode Forward Voltage 4.0 ID = 250 µA 2.8 2.4 2.0 - 50 5 VSD - Source-to-Drain Voltage (V) 30 20 10 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) 0.1 1 10 100 600 Time (s) Single Pulse Power Threshold Voltage 100 Limited by RDS(on)* I D - Drain Current (A) 10 100 µs 1 ms 1 10 ms 100 ms 0.1 TA = 25 C Single Pulse BVDSS Limited 1s 10 s DC 0.01 0.1 1 * VGS 10 100 1000 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 69251 S09-0220-Rev. B, 09-Feb-09 Si4100DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 6 8 5 Power Dissipation (W) ID - Drain Current (A) 6 4 2 4 3 2 1 0 0 0 25 50 75 100 125 150 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 69251 S09-0220-Rev. B, 09-Feb-09 www.vishay.com 5 Si4100DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 68 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69251. www.vishay.com 6 Document Number: 69251 S09-0220-Rev. B, 09-Feb-09 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000