New Product Si4136DY Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.002 at VGS = 10 V 46 0.0025 at VGS = 4.5 V 41 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.) 34 nC APPLICATIONS • OR-ing • DC/DC SO-8 D S 1 8 D S 2 7 D S 3 6 D 5 D G 4 G Top View S Ordering Information: Si4136DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID IDM Pulsed Drain Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Continuous Source-Drain Diode Current Limit 20 ± 20 46 37 Operating Junction and Storage Temperature Range Unit V 31b, c 24.7b, c 70 7 A 3.1b, c 30 45 7.8 5 mJ 3.5b, c 2.2b, c - 55 to 150 TJ, Tstg W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Symbol RthJA RthJF Typical 29 13 Maximum 35 16 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 80 °C/W. Document Number: 64718 S09-0139-Rev. A, 02-Feb-09 www.vishay.com 1 New Product Si4136DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage ΔVDS/TJ VDS Temperature Coefficient V 19 ID = 250 µA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 2.2 V IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 55 °C 10 Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS ≥ 5 V, VGS = 10 V -6 1.0 30 µA A VGS = 10 V, ID = 15 A 0.00155 0.002 VGS = 4.5 V, ID = 10 A 0.00195 0.0025 VDS = 10 V, ID = 15 A 85 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 4560 VDS = 10 V, VGS = 0 V, f = 1 MHz Turn-On Delay Time tr td(off) Turn-Off Delay Time Fall Time Turn-On Delay Time 110 34 50 11 VDS = 10 V, VGS = 4.5 V, ID = 20 A nC 9 f = 1 MHz VDD = 10 V, RL = 1 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 0.3 1.5 3 34 60 26 45 50 90 23 40 td(on) 13 25 11 22 43 70 9 18 td(off) Turn-Off Delay Time VDD = 10 V, RL = 1 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω tf Fall Time 73 tf tr Rise Time pF 545 VDS = 10 V, VGS = 10 V, ID = 20 A td(on) Rise Time 1285 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage IS TC = 25 °C 7 ISM VSD 70 IS = 2 A 0.69 1.1 A V Body Diode Reverse Recovery Time trr 31 47 ns Body Diode Reverse Recovery Charge Qrr 24 36 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 15.5 15.5 ns Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 64718 S09-0139-Rev. A, 02-Feb-09 New Product Si4136DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 70 10 VGS = 10 thru 3 V 8 I D - Drain Current (A) I D - Drain Current (A) 56 42 28 6 TC = 25 °C 4 TC = 125 °C 14 2 TC = - 55 °C 0 0.0 0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.0030 6000 0.0026 4800 0.0022 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) Ciss VGS = 4.5 V 0.0018 3600 2400 1200 VGS = 10 V 0.0014 Coss Crss 0 0.0 0.0010 0 14 28 42 56 70 4.8 7.2 9.6 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 12.0 1.8 ID = 15 A ID = 20 A 1.6 VDS = 5 V 6 VDS = 10 V VDS = 15 V 4 2 (Normalized) 8 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 2.4 VGS = 10 V 1.4 1.2 VGS = 4.5 V 1.0 0.8 0 0 15 30 45 Qg - Total Gate Charge (nC) Gate Charge Document Number: 64718 S09-0139-Rev. A, 02-Feb-09 60 75 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product Si4136DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.015 10 0.012 TJ = 150 °C 1 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 15 A TJ = 25 °C 0.1 0.01 0.001 0.0 0.009 0.006 TJ = 125 °C 0.003 TJ = 25 °C 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 VSD - Source-to-Drain Voltage (V) 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.5 200 0.2 160 - 0.1 Power (W) VGS(th) Variance (V) 3 ID = 5 mA - 0.4 120 80 ID = 250 µA - 0.7 - 1.0 - 50 40 0 - 25 0 25 50 75 100 125 150 0.001 0.01 TJ - Temperature (°C) 0.1 1 10 Time (s) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 Limited by RDS(on)* 1 ms I D - Drain Current (A) 10 10 ms 100 ms 1 1s 10 s 0.1 DC TA = 25 °C Single Pulse 0.01 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 64718 S09-0139-Rev. A, 02-Feb-09 New Product Si4136DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 I D - Drain Current (A) 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 10 2.0 8 1.6 6 1.2 Power (W) Power (W) Current Derating* 4 0.8 0.4 2 0.0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power Derating, Junction-to-Case Power Derating, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 64718 S09-0139-Rev. A, 02-Feb-09 www.vishay.com 5 New Product Si4136DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 80 °C/W 0.02 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?64718. www.vishay.com 6 Document Number: 64718 S09-0139-Rev. A, 02-Feb-09 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000