Si4136DY Datasheet

New Product
Si4136DY
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)a
0.002 at VGS = 10 V
46
0.0025 at VGS = 4.5 V
41
VDS (V)
20
• Halogen-free According to IEC 61249-2-21
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
Qg (Typ.)
34 nC
APPLICATIONS
• OR-ing
• DC/DC
SO-8
D
S
1
8
D
S
2
7
D
S
3
6
D
5
D
G
4
G
Top View
S
Ordering Information: Si4136DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
IDM
Pulsed Drain Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
Continuous Source-Drain Diode Current
Limit
20
± 20
46
37
Operating Junction and Storage Temperature Range
Unit
V
31b, c
24.7b, c
70
7
A
3.1b, c
30
45
7.8
5
mJ
3.5b, c
2.2b, c
- 55 to 150
TJ, Tstg
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Symbol
RthJA
RthJF
Typical
29
13
Maximum
35
16
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 80 °C/W.
Document Number: 64718
S09-0139-Rev. A, 02-Feb-09
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1
New Product
Si4136DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
20
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
ΔVDS/TJ
VDS Temperature Coefficient
V
19
ID = 250 µA
mV/°C
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = 250 µA
2.2
V
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
VDS = 20 V, VGS = 0 V
1
VDS = 20 V, VGS = 0 V, TJ = 55 °C
10
Gate-Source Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
VDS ≥ 5 V, VGS = 10 V
-6
1.0
30
µA
A
VGS = 10 V, ID = 15 A
0.00155
0.002
VGS = 4.5 V, ID = 10 A
0.00195
0.0025
VDS = 10 V, ID = 15 A
85
Ω
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
4560
VDS = 10 V, VGS = 0 V, f = 1 MHz
Turn-On Delay Time
tr
td(off)
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
110
34
50
11
VDS = 10 V, VGS = 4.5 V, ID = 20 A
nC
9
f = 1 MHz
VDD = 10 V, RL = 1 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
0.3
1.5
3
34
60
26
45
50
90
23
40
td(on)
13
25
11
22
43
70
9
18
td(off)
Turn-Off Delay Time
VDD = 10 V, RL = 1 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
tf
Fall Time
73
tf
tr
Rise Time
pF
545
VDS = 10 V, VGS = 10 V, ID = 20 A
td(on)
Rise Time
1285
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward
Currenta
Body Diode Voltage
IS
TC = 25 °C
7
ISM
VSD
70
IS = 2 A
0.69
1.1
A
V
Body Diode Reverse Recovery Time
trr
31
47
ns
Body Diode Reverse Recovery Charge
Qrr
24
36
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
15.5
15.5
ns
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 64718
S09-0139-Rev. A, 02-Feb-09
New Product
Si4136DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
70
10
VGS = 10 thru 3 V
8
I D - Drain Current (A)
I D - Drain Current (A)
56
42
28
6
TC = 25 °C
4
TC = 125 °C
14
2
TC = - 55 °C
0
0.0
0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.0030
6000
0.0026
4800
0.0022
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
Ciss
VGS = 4.5 V
0.0018
3600
2400
1200
VGS = 10 V
0.0014
Coss
Crss
0
0.0
0.0010
0
14
28
42
56
70
4.8
7.2
9.6
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
12.0
1.8
ID = 15 A
ID = 20 A
1.6
VDS = 5 V
6
VDS = 10 V
VDS = 15 V
4
2
(Normalized)
8
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
2.4
VGS = 10 V
1.4
1.2
VGS = 4.5 V
1.0
0.8
0
0
15
30
45
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 64718
S09-0139-Rev. A, 02-Feb-09
60
75
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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New Product
Si4136DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.015
10
0.012
TJ = 150 °C
1
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 15 A
TJ = 25 °C
0.1
0.01
0.001
0.0
0.009
0.006
TJ = 125 °C
0.003
TJ = 25 °C
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
VSD - Source-to-Drain Voltage (V)
4
5
6
7
8
9
10
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.5
200
0.2
160
- 0.1
Power (W)
VGS(th) Variance (V)
3
ID = 5 mA
- 0.4
120
80
ID = 250 µA
- 0.7
- 1.0
- 50
40
0
- 25
0
25
50
75
100
125
150
0.001
0.01
TJ - Temperature (°C)
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
Limited by RDS(on)*
1 ms
I D - Drain Current (A)
10
10 ms
100 ms
1
1s
10 s
0.1
DC
TA = 25 °C
Single Pulse
0.01
0.01
0.1
BVDSS Limited
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 64718
S09-0139-Rev. A, 02-Feb-09
New Product
Si4136DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
I D - Drain Current (A)
40
30
20
10
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
10
2.0
8
1.6
6
1.2
Power (W)
Power (W)
Current Derating*
4
0.8
0.4
2
0.0
0
0
25
50
75
100
125
150
0
25
50
75
100
125
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Case
Power Derating, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 64718
S09-0139-Rev. A, 02-Feb-09
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New Product
Si4136DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 80 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?64718.
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Document Number: 64718
S09-0139-Rev. A, 02-Feb-09
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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Document Number: 72606
Revision: 21-Jan-08
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Revision: 02-Oct-12
1
Document Number: 91000