Si4124DY Datasheet

New Product
Si4124DY
Vishay Siliconix
N-Channel 40-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)d
0.0075 at VGS = 10 V
20.5
0.009 at VGS = 4.5 V
18.7
VDS (V)
40
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• 100 % Rg Tested
Qg (Typ.)
21 nC
APPLICATIONS
• Synchronous Rectification
• DC/DC
SO-8
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
D
G
Top View
S
Ordering Information: Si4124DY-T1-E3 (Lead (Pb)-free)
Si4124DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
40
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
20.5
TC = 70 °C
16.4
TA = 25 °C
ID
Pulsed Drain Current
IDM
50
IAS
33
Continuous Source-Drain Diode Current
Maximum Power Dissipation
TC = 25 °C
TA = 25 °C
EAS
54
IS
A
2.1a, b
5.7
TC = 70 °C
3.6
PD
W
2.5a, b
1.6a, b
TA = 70 °C
Operating Junction and Storage Temperature Range
mJ
4.7
TC = 25 °C
TA = 25 °C
A
10.9a, b
Avalanche Current
L = 0.1 mH
V
13.6a, b
TA = 70 °C
Avalanche Energy
Unit
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Maximum Junction-to-Ambienta, c
t ≤ 10 s
RthJA
39
50
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
18
22
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 85 °C/W.
d. Based on TC = 25 °C.
Document Number: 68601
S09-0392-Rev. B, 09-Mar-09
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1
New Product
Si4124DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
40
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = 250 µA
VGS(th)
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
V
46
mV/°C
- 6.7
1
3
V
± 100
nA
VDS = 40 V, VGS = 0 V
1
VDS = 40 V, VGS = 0 V, TJ = 55 °C
5
VDS ≥ 5 V, VGS = 10 V
50
µA
A
VGS = 10 V, ID = 14 A
0.0062
0.0075
VGS = 4.5 V, ID = 12 A
0.0073
0.009
VDS = 15 V, ID = 16 A
55
Ω
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Rg
3540
VDS = 20 V, VGS = 0 V, f = 1 MHz
VDS = 10 V, VGS = 10 V, ID = 16 A
VDS = 10 V, VGS = 4.5 V, ID = 16 A
td(off)
pF
51
77
21
32
10.7
f = 1 MHz
VDD = 20 V, RL = 2 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
0.75
1.5
30
45
14
21
38
60
tf
11
17
td(on)
14
21
tr
td(off)
nC
3.0
td(on)
tr
335
142
VDD = 20 V, RL = 2 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
tf
10
15
32
50
8
15
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
32
50
IS = 10 A, VGS = 0 V
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.8
1.2
V
25
50
ns
19
38
nC
13
12
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 68601
S09-0392-Rev. B, 09-Mar-09
New Product
Si4124DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
50
VGS = 10 V thru 4 V
8
ID - Drain Current (A)
ID - Drain Current (A)
40
30
VGS = 3 V
20
6
4
TC = 125 °C
2
10
TC = 25 °C
TC = - 55 °C
0
0.0
0
0.5
1.0
1.5
0
2.0
1
2
3
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.010
4
4000
VGS = 4.5 V
0.008
0.006
3200
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
Ciss
VGS = 10 V
0.004
0.002
2400
1600
Coss
800
Crss
0.000
0
0
10
20
30
40
50
0
20
30
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
40
2.0
10
ID = 16 A
ID = 14 A
VDS = 10 V
VGS = 10 V
8
RDS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
10
VDS = 20 V
6
VDS = 30 V
4
1.6
VGS = 4.5 V
1.2
0.8
2
0
0
11
22
33
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 68601
S09-0392-Rev. B, 09-Mar-09
44
55
0.4
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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New Product
Si4124DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.03
ID = 14 A
TJ = 150 °C
1
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
10
TJ = 25 °C
0.1
0.01
0.02
TJ = 125 °C
0.01
TJ = 25 °C
0.001
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
4
5
6
7
8
9
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
10
170
ID = 250 µA
136
ID = 5 mA
Power (W)
VGS(th) - Variance (V)
3
VSD - Source-to-Drain Voltage (V)
0.3
- 0.3
- 0.6
- 0.9
- 50
2
Source-Drain Diode Forward Voltage
0.6
0.0
1
102
68
34
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
TJ - Junction Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power (Junction-to-Ambient)
100
Limited by RDS(on)*
10
100 µs
ID - Drain Current (A)
10
1 ms
10 ms
1
100 ms
1s
0.1
10 s
TA = 25 °C
Single Pulse
0.01
0.1
BVDSS
Limited
1
100 s, DC
10
100
VDS - Drain-to-Source Voltage (V)
* VDS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 68601
S09-0392-Rev. B, 09-Mar-09
New Product
Si4124DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
25
ID - Drain Current (A)
20
15
10
5
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
7.0
1.80
5.6
1.44
4.2
1.08
Power (W)
Power (W)
Current Derating*, Junction-to-Foot
2.8
0.72
0.36
1.4
0.00
0.0
0
25
50
75
100
125
TC - Case Temperature (°C)
Power Derating, Junction-to-Foot
150
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68601
S09-0392-Rev. B, 09-Mar-09
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New Product
Si4124DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 85 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10-1
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
100
10
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68601.
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Document Number: 68601
S09-0392-Rev. B, 09-Mar-09
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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22
Document Number: 72606
Revision: 21-Jan-08
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Revision: 02-Oct-12
1
Document Number: 91000