Si4434DY Vishay Siliconix N-Channel 250-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RrDS(on) (Ω) 250 ID (A) 0.155 at VGS = 10 V 3.0 0.162 at VGS = 6.0 V 2.9 • Halogen-free According to IEC 61249-2-21 Definition • PWM-Optimized TrenchFET® Power MOSFET • 100 % Rg Tested • Avalanche Tested APPLICATIONS • Primary Side Switch In: - Telecom Power Supplies - Distributed Power Architectures - Miniature Power Modules SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D D G Top View Ordering Information: Si4434DY-T1-E3 (Lead (Pb)-free) Si4434DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 250 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Continuous Source Current (Diode Conduction)a Single Pulse Avalanche Energy Maximum Power Dissipationa IS L = 0.1 mH TA = 25 °C TA = 70 °C 3.0 2.1 1.7 30 1.3 13 EAS 8.4 mJ 3.1 1.56 2.0 1.0 TJ, Tstg Operating Junction and Storage Temperature Range A 2.6 IAS PD V 2.4 IDM Pulsed Drain Current Avalanche Current ID Unit - 55 to 150 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t ≤ 10 s Steady State Steady State RthJA RthJF Typical Maximum 33 40 65 80 17 21 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 72562 S09-0322-Rev. D, 02-Mar-09 www.vishay.com 1 Si4434DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. 2.0 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea Diode Forward Voltage a V nA VDS = 250 V, VGS = 0 V 1 VDS = 250 V, VGS = 0 V, TJ = 55 °C 15 VDS ≥ 10 V, VGS = 10 V RDS(on) Forward Transconductancea 4.0 ± 100 µA 20 A VGS = 10 V, ID = 3.0 A 0.129 0.155 VGS = 6.0 V, ID = 2.9 A 0.131 0.162 gfs VDS = 15 V, ID = 3.0 A 14 VSD IS = 2.8 A, VGS = 0 V 0.75 1.2 34 50 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg VDS = 100 V, VGS = 10 V, ID = 3.0 A 0.6 td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr nC 6.8 10.5 1.2 1.8 16 25 VDD = 100 V, RL = 25 Ω ID ≅ 4.0 A, VGEN = 10 V, Rg = 6 Ω 23 35 47 70 19 30 IF = 2.8 A, dI/dt = 100 A/µs 100 150 Ω ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 40 VGS = 10 V thru 6 V 35 24 ID - Drain Current (A) ID - Drain Current (A) 30 5V 18 12 25 20 15 TC = 125 °C 10 6 25 °C 5 - 55 °C 0 0 0 www.vishay.com 2 2 4 6 8 10 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 5 6 Document Number: 72562 S09-0322-Rev. D, 02-Mar-09 Si4434DY Vishay Siliconix 25 °C, unless otherwise noted 0.30 2500 0.24 2000 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) TYPICAL CHARACTERISTICS 0.18 VGS = 6 V VGS = 10 V 0.12 0.06 Ciss 1500 1000 Coss 500 Crss 0.00 0 0 8 16 24 32 40 0 150 200 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Capacitance 250 2.5 VGS = 10 V ID = 3.0 A VDS = 100 V ID = 3.0 A 8 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 100 On-Resistance vs. Drain Current 10 6 4 2.0 1.5 1.0 2 0.5 - 50 0 0 7 14 21 28 35 0 25 50 75 100 125 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 0.25 RDS(on) - On-Resistance (Ω) TJ = 150 °C 10 TJ = 25 °C 1 0.0 - 25 Qg - Total Gate Charge (nC) 50 IS - Source Current (A) 50 0.20 ID = 3.0 A 0.15 0.10 0.05 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 VDS - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 72562 S09-0322-Rev. D, 02-Mar-09 10 www.vishay.com 3 Si4434DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.0 60 50 0.5 40 0.0 Power (W) V GS(th) Variance (V) ID = 250 µA - 0.5 30 20 - 1.0 10 - 1.5 - 50 - 25 0 25 50 75 100 125 0 0.01 150 TJ - Temperature (°C) 1 Time (s) Threshold Voltage Single Pulse Power 0.1 10 100 100 Limited by RDS(on)* ID - Drain Current (A) 10 1 1 ms 10 ms 0.1 100 ms 1s TC = 25 °C Single Pulse 0.01 0.001 0.1 1 10 10 s DC 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 65 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 72562 S09-0322-Rev. D, 02-Mar-09 Si4434DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72562. Document Number: 72562 S09-0322-Rev. D, 02-Mar-09 www.vishay.com 5 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000