TPD1046F Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD1046F 2-IN-1 Low-Side Power Switch for Motor, Solenoid and Lamp Drive The TPD1046F is a 2-IN-1 low-side switch. The IC has a vertical MOSFET output which can be directly driven from a CMOS or TTL logic circuit (e.g., an MPU). The IC is equipped with intelligent self-protection functions. Features • Two built-in power IC chips with a structure combining a control block and a vertical power MOSFET (L2-π-MOS) on each chip. • Can directly drive a power load from a CMOS or TTL logic. • Built-in protection circuits against overvoltage (active clamp), overtemperature (thermal shutdown), and overcurrent (current limiter). • Low Drain-Source ON-resistance: RDS (ON) = 0.2 Ω (max) (@VIN = 5 V, ID = 1 A, Tch = 25°C) • Low Leakage Current: IDSS = 10 μA (max) (@VIN = 0 V, VDS = 30 V, Tch = 25°C) • Low Input Current: IIN = 600 μA (max) (@VIN = 5 V, Tch = -40~125°C) • 8-pin SOP package with embossed-tape packing. Pin Assignment (top view) SOP8-P-1.27A Weight: 0.08 g (typ.) Marking SOURCE1 1 8 DRAIN1 IN1 2 7 DRAIN1 SOURCE2 3 6 DRAIN2 IN2 4 5 DRAIN2 TPD1046 F Part No. (or abbreviation code) Lot No. (weekly code) A line indicates Lead (Pb)-Free Finish (TOP VIEW) Note 1: Due to its MOS structure, this product is sensitive to static electricity. 1 2007-10-02 TPD1046F Block Diagram SOURCE1 1 8 DRAIN1 Overtemperature Detection /Protection Overcurrent Detection /Protection IN1 2 7 DRAIN1 SOURCE2 3 6 DRAIN2 Overtemperature Detection /Protection Overcurrent Detection /Protection IN2 4 5 DRAIN2 Pin Description Pin No. Symbol 1 SOURCE1 2 IN1 3 SOURCE2 4 IN2 5, 6 DRAIN2 7, 8 DRAIN1 Pin Description Source pin 1 Input pin 1 This pin is connected to a pull-down resistor internally, so that even when input wiring is open-circuited, output can never be turned on inadvertently. Source pin 2 Input pin 2 This pin is connected to a pull-down resistor internally, so that even when input wiring is open-circuited, output can never be turned on inadvertently. Drain pin 2 Drain current is limited (by current limiter) if it exceeds 3 A (min) in order to protect the IC. Drain pin 1 Drain current is limited (by current limiter) if it exceeds 3 A (min) in order to protect the IC. 2 2007-10-02 TPD1046F hysteresis(5℃ typ.) Timing Chart Input signal VIN Overcurrent detection Overtemperature detection Overtemperature recovery Channel temperature VCL(DSS) VDD Drain-source Voltage VDS Inductive load Drain current ID Normal Current limiting (limiter) Overtemperature protection (Note 2) Active clamp Note 2: The overtemperature detector circuits feature hysteresis. After overtemperature is detected, normal operation is restored only when the channel temperature falls by the hysteresis amount (5°C typ.) in relation to the overtemperature detection temperature. Truth Table VIN VDS Output State L H OFF H L ON L H OFF H H current limiting(limiter) L H OFF H H OFF Operating State Normal Overcurrent Overtemperature 3 2007-10-02 TPD1046F Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit VDS(DC) 40 V Drain current ID Internally Limited A Input voltage VIN −0.3~7 V PD(1) 0.95 W PD(2) 0.54 W PD(1) 0.38 W PD(2) 0.20 W Single pulse active clamp tolerance (Note 5) EAS 97 mJ Active clamp current IAR 3 A EAR 54 μJ Operating temperature Topr −40~125 °C Channel temperature Tch 150 °C Storage temperature Tstg −55~150 °C Drain-source voltage 1device operation Power dissipation (Note 4a) (Ta = 25°C) (Note 3-a) 2 devices operation per device (Note 4b) 1device operation Power dissipation (Note 4a) (Ta = 25°C) (Note 3-b) 2 devices operation per device (Note 4b) Repetitive active clamp tolerance (Note 3-a) (Note 6) Thermal Characteristics Characteristics 1device operation Thermal resistance, channel to (Note 4a) ambient (Note 3-a) 2 devices operation per device (Note 4b) 1device operation Thermal resistance, channel to (Note 4a) ambient (Note 3-b) 2 devices operation per device (Note 4b) Note: Symbol max Rth (ch-a)(1) 132 Unit °C/W Rth (ch-a)(2) 231 Rth (ch-a)(1) 330 °C/W Rth (ch-a)(2) 625 Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 3: 3-a : glass epoxy board (a) 3-b : glass epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (unit: mm) FR-4 25.4 × 25.4 × 0.8 (unit: mm) (a) (b) 4 2007-10-02 TPD1046F Note 4: a) 1 device operation : power dissipation value or thermal resistance of one side device. b) 2 devices operation per device : power dissipation value or thermal resistance per device when power is impressed evenly. Note 5: VDD = 25 V, Tch = 25°C(initial), L = 10.8 mH, IAR = 3 A, RG = 25 Ω Note 6: Repetitive rating : Pulse width limited by maximum channel temperature. 5 2007-10-02 TPD1046F Electrical Characteristics Characteristics Drain-source clamp voltage Input threshold voltage Protective circuit operation input voltage range Drain cut-off current Symbol Test Circuit V (CL) DSS - Vth - VIN (opr) - IDSS - IIH (1) - Test Condition Tch = 25°C Tch = -40~125°C Tch = 25°C Tch = -40~125°C Tch = 25°C Tch = -40~125°C Tch = 25°C Tch = -40~125°C - RDS (ON) - VDS - temperature detection TOT(1) - temperature recovery TOT2() - IOC - Drain-source on resistance Load-short tolerance Overtemperature detection Tch = -40~125°C Tch = 25°C 1 toff Drain-source diode forward voltage VDSF 40 49 60 40 - 60 1.0 1.6 2.8 0.9 - 3.0 4 - 7 VIN = 0 V, VDS = 12 V - - 10 - - 30 VIN = 5 V, at normal operation - 130 600 - - 600 VIN = 0 V, ID = 1 mA VDS = 13 V, ID = 10 mA - VIN = 5 V, when protective circuit is actuated Tch = -40~125°C Tch = -40~125°C VIN = 4～6 V Tch = 25°C Tch = -40~125°C Tch = -40~125°C Tch = 25°C VIN = 5 V VDD = 13 V, VIN = 0 V/5 V, RL = 13 Ω Tch = -40~125°C - Tch = 25°C Unit V V V μA μA - - 2000 - 0.14 0.2 - - 0.3 20 - - V 150 160 - °C 125 155 - °C 3.0 3.7 - 2.0 - - - 15 100 - - 100 - 30 100 - - 100 - - 1.7 Ω VIN = 5 V Tch = 25°C ton Switching time Max VIN = 5 V, ID = 1 A - Overcurrent detection Typ. Tch = -40~125°C High level input current IIH (2) Min VIN = 0 V, IF = 1 A A μs V Test Circuit 1 Switching time measuring circuit Test circuit Measured waveforms tr ≦ 0.1μs VDD=13V 90% VIN RL=13Ω 0V DRAIN IN VIN tf ≦ 0.1μs 5V 90% 10% 10% 90% TPD1046F P.G. V VDS VDS 13 V 10% 0V SOURCE ton 6 toff 2007-10-02 TPD1046F -TTchch VVthth– V(CL)DSS – ch Tch (CL)DSS-T 5 60 50 40 30 20 VVIN = 0V IN=0V 10 V = 13V VDS DS=13V 5 70 Input threshold voltageVV (V) thth(V) 入力しきい値電圧 ドレイン･ソース間クランプ電圧 Drain-source clamp voltage VV(CL)DSS (V) (CL)DSS (V) 80 IDID==1mA 1mA ID = 10mA ID=10mA 4 4 3 3 2 2 1 1 0 -80 -60 -40 -20 0 0 20 40 60 -80 -60 -40 -20 80 100 120 140 160 IIIH(1) –chTch IH(1)-T 500 V IN 5V VIN==5V State Normal State:: Normal High level input current 入力電流 IIH (1)(μA) IIH(1) (μA) High level input current 入力電流 IIH(1) (μA) IIH(1) (μA) 250 200 150 100 50 = 25 °C ch TTch =25°C State : Normal State: Normal 400 350 300 250 200 150 100 0 0 20 40 60 80 100 120 140 160 0 1 2 3 4 5 6 7 8 V IN (V) Input voltage VIN (V) 入力電圧 Channel temperature Tch ( ℃) Tch (°C) チャネル温度 IIIH(2) –ch Tch IH(2)-T IIH(2) –VININ IH(2)-V 500 1000 V IN = 5V VIN=5V State : Overcurrent State: Overcurrent 450 350 300 250 200 150 100 = 25 °C ch=25°C TTch StateOvercurent : Overcurrent State: 900 High level input current 入力電流 (2)(μA) IIH(2) IIH(μA) 400 IH(2) 80 100 120 140 160 50 0 -80 -60 -40 -20 High level input current 入力電流 IIH(2) (μA) (μA) I 60 450 400 300 40 IIIH(1) –VIN IN IH(1)-V 500 350 20 Channel temperature Tch (°C) チャネル温度 Tch (℃) Channel temperature Tch (°C) チャネル温度 Tch ( ℃) 450 0 800 700 600 500 400 300 200 100 50 0 -80 -60 -40 -20 0 0 20 40 60 0 80 100 120 140 160 1 2 3 4 5 6 7 8 V IN (V) 入力電圧 Input voltage VIN (V) Channel temperature Tch ( ℃)Tch (°C) チャネル温度 7 2007-10-02 TPD1046F RRDS(ON) – Tch DS(ON) -Tch R – VININ RDS(ON) DS(ON)-V 0.3 0.25 Drain-source on resistance ドレイン･ソース間オン抵抗 RDS(ON) (Ω) ＲDS(ON) (Ω) Drain-source on resistance ドレイン･ソース間オン抵抗 RDS(ON) (Ω) DS(ON)(Ω) Ｒ 0.3 0.2 0.15 0.1 0.05 IN=5V VVIN = 5V 0.25 0.2 0.15 0.1 D=1A ID I= 1A 0.05 Tch Tch ==25°C 25 °C ID==1A ID 1A 0 -80 -60 -40 -20 0 0 20 40 60 80 100 120 140 160 0 1 2 (A) Overcurrent detection 過電流検出値 IOC I(A) OC (A) Overcurrent detection 過電流検出値 OC IOC I(A) VVIN 5V IN==5V 8 7 6 5 4 3 2 1 0 7 8 TT 25 °C chch==25°C 9 8 7 6 5 4 3 2 1 0 20 40 60 80 100 120 140 160 0 1 2 ,t – Tch tton on ,toff off－Tch Switching time tonton,toff ,toff (μs) スイッチングタイム (μs) VV 5V ININ==5V 40 RR 13Ω L= L=13Ω 35 30 toｆｆ 25 4 5 6 7 8 ton ton,t,toff IN of f–-VVIN 50 DD==13V VV 13V DD 45 3 Input voltage V INV(V) IN (V) 入力電圧 Channel temperature T ) (°C) チャネル温度 Tch ( ℃ch Switching time ton ,toff (μs) スイッチングタイム ton,toff (μs) 6 0 -80 -60 -40 -20 20 10 5 10 9 15 4 IOC – VININ IOC -V IOC – ch Tch IOC -T 10 50 3 (V) V IN V Input 入力電圧 voltage IN (V) Tch ( ℃T) ch (°C) Channel temperature チャネル温度 ton 5 VDD=13V VDD = 13V 45 Ω RR 13Ω L L==13 40 Tch Tch ==25°C 25 °C 35 30 toｆｆ 25 20 15 10 ton 5 0 0 -80 -60 -40 -20 0 20 40 60 0 80 100 120 140 160 1 2 3 4 5 6 7 8 Input voltage VIN (V) V IN (V) 入力電圧 Channel temperature Tch ( ℃) Tch (°C) チャネル温度 8 2007-10-02 1.6 DD=13V VVDD = 13V 220 180 160 140 120 100 80 60 (W ) 200 PP Ta -Ta DD– TOT(1) – VIN TOT-VIN 1.4 Power dissipation PD 許容損失 P D (W) (°C ) 240 Overtemperature detection TOT(1) 過熱検出温度 TOT (℃) TPD1046F 1.2 1 (1) 0.8 (2) 0.6 (3) 0.4 (4) 40 0.2 20 0 -40 0 2 3 4 5 6 7 8 -20 Input voltage VIN (V) 入力電圧 V IN (V) 0 20 40 60 80 100 120 140 160 ) (°C) Ta ( ℃Ta Ambient周囲温度 temperature (1)Mounted on glass (2)Mounted on glass (per device) (3)Mounted on glass (4)Mounted on glass (per device) (°C/W ) 1 Transient thermal resistance th(ch-a) 過渡熱抵抗 rth(h-a) r(℃/W) 0 epoxy board(a) 1 device operation epoxy board(a) 2 devices operation epoxy board(b) 1 device operation epoxy board(b) 2 devices operation rrth(ch-a)-tw th(ch-a) – tW 1000 (4) (3) (2) 100 (1) 10 (1)Mounted on glass epoxy board(a) 1device operation (1)Mounted on glassonepoxy 1 device operation (2)Mounted glass board(a) epoxy board(a) 2device operation (2)Mounted glass epoxy board(a) 2 devices operation (peron device) (per device) (3)Mounted on glass epoxy board(b) 1device operation (3)Mounted on glass epoxy board(b) 1 device operation (4)Mounted on glass epoxy board(b) 2device operation (4)Mounted on glass epoxy board(b) 2 devices operation (per device) (per device) Measuring single pulse,Ta=25 Measureing single pulse, Ta = 25 °C ℃ 1 0.1 0.001 0.01 0.1 1 10 100 1000 tw (s) パルス幅 Pulse width tW (s) 9 2007-10-02 TPD1046F Package Dimensions Weight: 0.08 g (typ.) 10 2007-10-02 TPD1046F RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 11 2007-10-02