Full SiC & Hybrid SiC IGBTs & IPMs Applications Overview Traction Powerex and Mitsubishi continue to expand their product offering with the newest power semiconductor technology, Silicon Carbide. SiC offers significant advantages over Silicon (Si) in power applications requiring low losses, high frequency switching, and/or high temperature environments. Medical equipment Renewable energy Welding UPS Product Advantages Silicon carbide (SiC) technology Low-loss CSTBT™ silicon IGBT technology Low inductance for high speed switching Industry standard packages Powerex/Mitsubishi offer a full line of Silicon Carbide (SiC) modules to serve a wide range of applications. SiC hybrid modules (Si IGBT + SiC Schottky diode) and full SiC modules (SiC MOSFET + SiC Schottky diode) are available for new, very high efficiency designs or to achieve significant loss reduction in existing designs. Our extensive SiC module lineup supports applications including: Small inverters for HVAC High power inverters for traction and renewable energy applications High frequency inverters for medical and welding applications SiC hybrid modules offer ~45% reduction in power loss vs. Si counterparts due to lower turn-on losses, lower Vf, and effective reduction of diode reverse recovery losses to zero. Full SiC modules offer ~70% reduction in power loss vs. Si counterparts due to switching efficiency of MOSFET technology as well as reduced diode losses. Further, use of full SiC modules results in ~60% module size reduction vs. traditional Si. Flow Through Layout 45% Reduction Inverter Loss (W) Home appliance / HVAC IGBT Module (Si) 70% Reduction SiC Hybrid Module Full SiC Module ® FWD Switching FWD On-state IGBT Switching IGBT On-state Conditions: VCC = 600V IO = 222Arms fC = 15kHz P.F. = 0.8 Modulation = 1 Three-phase Modulation Tj = 125ºC www.pwrx.com Serving Our Customers Through Expertise, Innovation and Reliability Full SiC and Hybrid SiC IGBT and IPM Line-up Table Package Part Number Connection VCES (V) IC (A) SiC Modules for Small Inverters Super Mini-DIP PSH20L91A6-A SiC SBD/Si IGBT, Interleave PFC 600V 20A PSH20L91B6-A SiC SBD/Si IGBT, Interleave PFC with OT Protection 600V 20A PSF20L91A6-A Full SiC, Interleave PFC 600V 20A SiC Modules for Industrial Use 50mm x 120mm PMH200CS1D060 SiC SBD/Si IGBT, Six Pack IPM 600V 200A 67mm x 131mm PMH75CL1A120 SiC SBD/Si IGBT, Six Pack IPM 1200V 75A 67mm x 131mm PMF75CL1A120 SiC SBD/SiC MOSFET, Six Pack IPM 1200V 75A 62mm x 122mm FMF800DX-24A SiC SBD/SiC MOSFET, Dual 1200V 800A 122mm x 122mm FMF1200DX1-24A SiC SBD/SiC MOSFET, Dual 1200V 1200A 140mm x 130mm CMH1200DC-34S SiC SBD/Si IGBT, Dual 1700V 1200A 94mm x 48mm CMH100DY-24NFH SiC SBD/Si IGBT, Dual 1200V 100A 94mm x 48mm CMH150DY-24NFH SiC SBD/Si IGBT, Dual 1200V 150A 108mm x 62mm CMH200DU-24NFH SiC SBD/Si IGBT, Dual 1200V 200A 108mm x 62mm CMH300DU-24NFH SiC SBD/Si IGBT, Dual 1200V 300A 110mm x 80mm CMH400DU-24NFH SiC SBD/Si IGBT, Dual 1200V 400A 110mm x 80mm CMH600DU-24NFH SiC SBD/Si IGBT, Dual 1200V 600A IS O 25 Hybrid SiC Modules for High Frequency Use (Featuring CSTBT™ IGBT Technology and SiC SBD) 9 0 01 A 6 0 ® Lit. Code 242 - Rev. 1 - 3/11/2015 For more information: email: [email protected] phone: 724-925-7272, Option 3 (Applications Engineering Assistance) CSTBT is a registered trademark of Mitsubishi Electric Corp.