Full SiC & Hybrid SiC IGBTs Applications Overview PV inverters Large bandgap energy and high field breakdown are two primary characteristics of silicon carbide (SiC) which have been leveraged to create a new generation of power semiconductors with zero reverse recovery charge, significantly lower switching losses and the opportunity for higher temperature operation. UPS High speed motor drives Induction heating Welding Military & Aerospace power converters Medical imaging amplifiers Electric vehicle Boost converters Product Advantages Significant reduction in switching losses Increased system efficiency High temperature operation Higher operating frequency Reduced cooling requirements Zero reverse recovery current from diode Low parasitic inductance Reduced system size / high power density Powerex packages SiC MOSFETs and Schottky barrier diodes from leading suppliers into high performance all SiC modules or with high frequency silicon IGBTs into hybrid Si / SiC modules. The new low profile split dual package features low inductance and either a copper or AlSiC baseplate for high thermal cycling applications. Package Configuration QID1210005, QID1210006 QJD1210010, QJD1210011 C1 (10 - 12) D2 (4 - 6) G1 (15 - 16) G2 (19 - 20) E1 (13 - 14) S2 (17 - 18) E1 (7 - 9) S2 (1 - 3) C2 (4 - 6) D1 (10 - 12) G2 (19 - 20) G1 (15 - 16) E2 (17 - 18) S1 (13 - 14) E2 (1 - 3) S1 (7 - 9) ® www.pwrx.com Serving Our Customers Through Expertise, Innovation and Reliability Line-up Table 109.9mm x 56.1mm Part Number Package Configuration VCES (V) IC (A) Split Dual Hybrid Si / SiC QID1210005 - Cu Baseplate QID1210006 - AlSiC Baseplate Split Dual Split Dual 1200 1200 100 100 All SiC QJD1210010 - Cu Baseplate QJD1210011 - AlSiC Baseplate Split Dual MOSFET Split Dual MOSFET 1200 1200 100 100 Features IS O 25 QID1210005, QID1210006 9 0 01 A 6 0 ® Lit. Code 238 - Rev. 2 - 6/01/2016 QJD1210010, QJD1210011 Low ESW(off) Junction Temperature: 175°C Aluminum Nitride Isolation Silicon Carbide Chips Discrete Super-Fast Recovery Free-Wheel Silicon Carbide Schottky Diode Low Internal Inductance Low Internal Inductance 2 Individual Switches per Module Discrete Super-Fast Recovery Free-Wheel Silicon Carbide Schottky Diode Isolated Baseplate for Easy Heat Sinking High Speed Switching Automated Assembly Assures High Reliability Low Switching Losses Low Capacitance NFH Silicon IGBTs High Power Density Isolated Baseplate Aluminum Nitride Isolation 2 Individual Switches per Module For more information: visit: http://www.pwrx.com/summary/SiC-Modules email: [email protected] phone: 724-925-7272, Option 3 (Applications Engineering Assistance)