AOS Semiconductor Product Reliability Report AOT15B65M1, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc www.aosmd.com 1 This AOS product reliability report summarizes the qualification result for AOT15B65M1. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AOT15B65M1 passes AOS quality and reliability requirements. The released product will be categorized by the process family and be routine monitored for continuously improving the product quality. Table of Contents: I. II. III. IV. Product Description Package and Die information Reliability Stress Test Summary and Results Reliability Evaluation I. Product Description: • Latest AlphaIGBT (α IGBT) technology • 650V breakdown voltage • Very fast and soft recovery freewheeling diode • High efficient turn-on di/dt controllability • Low VCE(SAT) enables high efficiencies • Low turn-off switching loss and softness • Very good EMI behavior • High short-circuit ruggedness Details refer to the datasheet. II. Die / Package Information: Process Package Type Lead Frame Die Attach Bond Mold Material Moisture Level AOT15B65M1 Standard sub-micron TM 650V Alpha IGBT with Diode TO220 Bare Cu Solder Paste Al wire Epoxy resin with silica filler Level 1 2 III. Reliability Stress Test Summary and Results Test Item Test Condition Time Point Total Sample Size Number of Failures Reference Standard HTGB Temp = 175°C , Vge=100% of Vgemax 168 / 500 / 1000 hours 924 pcs 0 JESD22-A108 HTRB Temp = 175°C , Vce=80% of Vcemax 168 / 500 / 1000 hours 924 pcs 0 JESD22-A108 MSL Precondition 168hr 85°C / 85%RH + 3 cycle reflow@260°C (MSL 1) - 4158 pcs 0 JESD22-A113 96 hours 924 pcs 0 JESD22-A110 1000 hours 462 pcs 0 JESD22-A101 HAST H3TRB 130°C , 85%RH, 33.3 psia, Vce = 80% of Vcemax up to 42V 85°C , 85%RH, Vce = 80% of Vcemax up to 100V Autoclave 121°C , 29.7psia, RH=100% 96 hours 924 pcs 0 JESD22-A102 Temperature Cycle -65°C to 150°C , air to air, 500 cycles 924 pcs 0 JESD22-A104 HTSL Temp = 150°C 1000 hours 462 pcs 0 JESD22-A103 Power Tj = 100°C 8572 cycles 462 pcs 0 AEC Q101 3.5min on / 3.5min off Cycling Note: The reliability data presents total of available generic data up to the published date. IV. Reliability Evaluation FIT rate (per billion): 0.65 MTTF = 174680 years The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size. Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. 2 9 Failure Rate = Chi x 10 / [2 (N) (H) (Af)] = 0.65 9 MTTF = 10 / FIT = 174680 years Chi²= Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from burn-in tests H = Duration of burn-in testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)] Acceleration Factor ratio list: 55 deg C 70 deg C 85 deg C 100 deg C 125 deg C Af 758 256 95 38 9.7 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u =The use junction temperature in degree (Kelvin), K = C+273.16 k = Boltzmann’s constant, 8.617164 X 10-5eV / K 150 deg C 175 deg C 2.9 1 3