FMM5815X 17.5-20GHz Power Amplifier MMIC FEATURES • • • • • High Output Power: P1dB = 31dBm (Typ.) High Gain: G1dB = 21dB (Typ.) High PAE: ηadd = 30% (Typ.) Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology DESCRIPTION The FMM5815X is a high-gain, high linearity, 3-stage MMIC amplifier designed for operation in the17.5-20.0 GHz frequency range. This amplifier has an input and output designed for use in 50Ω systems.This device is well suited for point-to-point communication applications. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Symbol Condition Rating Unit Drain Voltage VDD 10 V Gate Voltage VGG -3.0 V Input Power Pin 22 dBm Storage Temperature Tstg -65 to +175 °C Operating Backside Temperature Top -65 to +85 °C Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDD) should not exceed 6 volts. 2. The forward and reverse gate currents should not exceed 4 and -0.39 mA respectively. 3. This product should be hermetically packaged ELECTRICAL CHARACTERISTICS (Ambient Temperature Tc=25°C) Item Frequency Range Symbol Conditions Min. f Limits Typ. Max. Unit GHz 17.5 - 20.0 Output Power at 1 dB G.C.P. P1dB 29.5 31 - dBm Power Gain at 1 dB G.C.P. G1dB 19 21 24 dB Drain Current Iddrf - 700 950 mA Power-Added Efficiency ηadd - 30 - % Input Return Loss RLin - -12 - dB RLout - -8 - dB -40 - dBc Output Return Loss 3rd Order Intermodulation Distortion IM3 VDD = 6V IDD = 600mA (Typ.) ZS = ZL = 50Ω ∆f=10MHz, 2-Tone Test, -37.0 Pout=20dBm S.C.L. G.C.P.: Gain Compression Point S.C.L.: Single Carrier Level Note 1: RF parameter sample size 10pcs. Criteria (accept/reject)=(0/1) Note 2: Electrical Characteristic is specified on RF-probe measurements Edition 1.0 June 2001 1 FMM5815X 17.5-20GHz Power Amplifier MMIC IM3 vs. OUTPUT POWER OUTPUT POWER vs. INPUT POWER 35 -20 -40 -45 -50 -55 31 17.5GHz 18.0GHz 20.0GHz Pout 27 23 40 ηadd 19 20 -60 19 21 23 25 27 29 15 -4 Total Output Power (dBm) 0 4 8 Total Input Power (dBm) P1dB & G1dB vs. FREQUENCY 40 P1dB G1dB ηadd VDD = 6V IDD(DC) = 600mA 120 36 104 32 88 28 72 24 56 20 40 16 24 17.5 18.0 18.5 19.0 Frequency (GHz) 2 19.5 20.0 ηadd (%) 17 12 0 ηadd (%) -35 17.5GHz 18.0GHz 20.0GHz P1dB(dBm), G1dB(dB) IM3 (dBc) -30 VDD = 6V IDD(DC) = 600mA Total Output Power (dBm) -25 VDD = 6V IDD(DC) = 600mA FMM5815X 17.5-20GHz Power Amplifier MMIC S-PARAMETERS VDD = 6V, IDS = 600mA FREQUENCY S11 (MHZ) MAG ANG 16500 17000 17500 18000 18500 19000 19500 20000 20500 21000 .357 .385 .443 .512 .566 .572 .538 .459 .346 .307 S21 MAG 47.0 19.3 -10.5 -39.3 -66.7 -92.9 -117.9 -144.7 165.1 74.2 10.785 12.059 13.360 14.483 14.782 14.585 13.693 13.188 12.600 11.066 S12 ANG -44.4 -80.4 -117.3 -156.9 161.9 120.3 78.7 37.1 -10.4 -65.4 S22 MAG ANG MAG ANG .004 .005 .005 .007 .007 .005 .005 .003 .005 .006 -51.8 -42.8 -62.5 -83.0 -95.1 -112.5 -142.9 94.6 33.8 -10.5 .110 .111 .169 .205 .220 .178 .121 .051 .044 .080 -20.6 -93.5 -134.6 -166.6 164.9 137.0 108.3 53.6 19.8 11.4 Download S-Parameters, click here ASSEMBLY DRAWING VGG VDD 0.15µF 0.15µF 220pF 220pF RFout RFin 220pF 220pF Chip Size: 3.57mm x 2.76mm 0.15µF VDD 3 FMM5815X 17.5-20GHz Power Amplifier MMIC CHIP OUTLINE VGG1 VDD2 VDD1 0 620 750 1155 2380 3075 3570 2760 2760 2640 2555 2510 1380 RFout 1194 RFin 280 205 120 0 250 0 0 120 636 750 VDD3 2380 1155 VDD4 3075 VDD5 Chip Size: 3570µm x 2760µm Chip Thickness: 70µm Pad Dimensions: 1. DC Pad: 80µm x 80µm VDD: 100µm x 100µm 2. RF Pad: 120µm x 80µm Unit: µm 3450 3570 VGG2 For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not ingest. FUJITSU QUANTUM DEVICES EUROPE LTD. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 2001 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0601M200 4