IRFD020, SiHFD020 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • For Automatic Insertion 50 RDS(on) () VGS = 10 V Available • Compact, End Stackable 0.10 RoHS* • Fast Switching Qg (Max.) (nC) 24 Qgs (nC) 7.1 • Ease of Paralleling 7.1 • Excellent Temperature Stability Qgd (nC) Configuration • Compliant to RoHS Directive 2002/95/EC Single D HVMDIP S COMPLIANT DESCRIPTION The HVMDIP technology is the key to Vishay’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HVMDIP design achieves very low on-state resistance combined with high transconductance and extreme device ruggedness. HVMDIPs feature all of the established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling, and temperature stability of the electrical parameters. The HVMDIP 4 pin, dual-in-line package brings the advantages of HVMDIPs to high volume applications where automatic PC board insertion is desireable, such as circuit boards for computers, printers, telecommunications equipment, and consumer products. Their compatibility with automatic insertion equipment, low-profile and end stackable features represent the stat-of-the-art in power device packaging. G G D S N-Channel MOSFET ORDERING INFORMATION Package HVMDIP IRFD020PbF SiHFD020-E3 IRFD020 SiHFD020 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltagea VDS 50 Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Currentb ID IDM Linear Derating Factor Inductive Current, Clamped Unclamped Inductive Current (Avalanche Current)c Maximum Power Dissipation L = 100 μH TC = 25 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s UNIT V 2.4 1.5 A 19 0.0080 W/°C 19 2.2 A PD 1.0 W TJ, Tstg - 55 to + 150 ILM IL 300d °C Notes a. TJ = 25 °C to 150 °C b. Repetitive rating; pulse width limited by maximum junction temperature. c. VDD = 25 V, starting TJ = 25 °C, L = 100 μH, Rg = 25 d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91465 S11-0915-Rev. A, 16-May-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFD020, SiHFD020 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient SYMBOL TYP. MAX. UNIT RthJA - 120 °C/W SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 50 - - V VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V nA Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage VGS = ± 20 V - - ± 500 VDS = max. rating, VGS = 0 V - - 250 VDS = max. rating x 0.8, VGS = 0 V, TC = 125 - - 1000 2.4 - - A IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) VGS = 10 V VDS > ID(on) x RDS(on) max. RDS(on) VGS = 10 V ID = 1.4 A Drain-Source On-State Resistanceb Forward Transconductanceb gfs VDS = 20 V, ID = 7.5 A μA - 0.080 0.10 4.9 7.3 - S - 400 - - 260 - - 44 - Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs VGS = 0 V, VDS = 25 V, f = 1.0 MHz VGS = 10 V ID = 15 A, VDS = max. rating x 0.8 - 16 24 - 4.7 7.1 Gate-Drain Charge Qgd - 4.7 7.1 Turn-On Delay Time td(on) - 8.7 13 - 55 83 - 16 24 - 26 39 - 4.0 - - 6.0 - - - 2.4 Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Internal Drain Inductance LD Internal Source Inductance LS VDD = 25 V, ID = 15 A, Rg = 18 , RD = 1.7 Between lead, 6 mm (0.25") from package and center of die contact D pF nC ns nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currentc Body Diode Voltagea IS ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TC = 25 °C, IS = 2.4 A, VGS = 0 V TJ = 25 °C, IF = 15 A, dI/dt = 100 A/μs - - 19 - - 1.4 V 57 130 310 ns 0.17 0.34 0.85 μC Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. c. VDD = 25 V, starting TJ = 25 °C, L = 100 μH, Rg = 25 www.vishay.com 2 Document Number: 91465 S11-0915-Rev. A, 16-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFD020, SiHFD020 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig. 1 - Typical Output Characteristics Fig. 2 - Typical Output Characteristics Document Number: 91465 S11-0915-Rev. A, 16-May-11 Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFD020, SiHFD020 Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area Document Number: 91465 S11-0915-Rev. A, 16-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFD020, SiHFD020 Vishay Siliconix Fig. 9 - Maximum Drain Current vs. Ambient Temperature Fig. 10 - Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Fig. 11 - Typical Transconductance vs. Drain Current Document Number: 91465 S11-0915-Rev. A, 16-May-11 Fig. 12 - Breakdown Voltage vs. Temperature www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFD020, SiHFD020 Vishay Siliconix Fig. 15a - Unclamped Inductive Load Test Waveforms Fig. 13 - Typical on-Resistance vs. Drain Current Fig. 16 - Switching Time Test Circuit Fig. 14a - Clamped Inductive Test Circuit Fig. 14b - Clamped Inductive Waveforms Fig. 17 - Gate Charge Test Circuit Fig. 15a - Unclamped Inductive Test Circuit www.vishay.com 6 Document Number: 91465 S11-0915-Rev. A, 16-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFD020, SiHFD020 Vishay Siliconix Fig. 18 - Typical Time to Accumulated 1 % Gate Failure Fig. 19 - Typical High Temperature Reverse Bias (HTRB) Failure Rate Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91465. Document Number: 91465 S11-0915-Rev. A, 16-May-11 www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix HVM DIP (High voltage) 0.248 [6.29] 0.240 [6.10] 0.043 [1.09] 0.035 [0.89] 0.197 [5.00] 0.189 [4.80] 0.133 [3.37] 0.125 [3.18] 0.180 [4.57] 0.160 [4.06] 0.094 [2.38] 0.086 [2.18] A L 0.160 [4.06] 0.140 [3.56] 0° to 15° 2x 0.017 [0.43] 0.013 [0.33] 0.045 [1.14] 2 x 0.035 [0.89] E min. 0.024 [0.60] 4x 0.020 [0.51] 0.100 [2.54] typ. E max. INCHES MILLIMETERS DIM. MIN. MAX. MIN. A 0.310 0.330 7.87 MAX. 8.38 E 0.300 0.425 7.62 10.79 L 0.270 0.290 6.86 7.36 ECN: X10-0386-Rev. B, 06-Sep-10 DWG: 5974 Note 1. Package length does not include mold flash, protrusions or gate burrs. Package width does not include interlead flash or protrusions. Document Number: 91361 Revision: 06-Sep-10 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000