SiA446DJ www.vishay.com Vishay Siliconix N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () MAX. ID (A) a 0.177 at VGS = 10 V 7.7 150 0.185 at VGS = 7.5 V 7.6 0.250 at VGS = 6 V 4 Qg (TYP.) 4.3 nC S 4 • 100 % Rg and UIS tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PowerPAK® SC-70-6L Single D 5 • ThunderFET® technology optimizes balance of RDS(on), Qg, Qsw and Qoss D 6 APPLICATIONS D • DC/DC converters / boost converters • Synchronous rectification S • Power management 05 2. m m 1 m 5m 2.0 Top View 3 G Bottom View 1 D 2 D G • LED backlighting S Marking Code: AV N-Channel MOSFET Ordering Information: SiA446DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage SYMBOL VDS LIMIT 150 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C 7.7 TC = 70 °C 6.2 TA = 25 °C ID Continuous Source-Drain Diode Current 2.6 b, c Single Pulse Avalanche Current Single Pulse Avalanche Energy IDM TC = 25 °C TA = 25 °C L = 0.1 mH TC = 70 °C TA = 25 °C 12 IS 2.9 b, c IAS 7 EAS 2.5 mJ 19 12 PD W 3.5 b, c 2.2 b, c TA = 70 °C Operating Junction and Storage Temperature Range A 10 TC = 25 °C Maximum Power Dissipation V 3.3 b, c TA = 70 °C Pulsed Drain Current (t = 100 μs) UNIT TJ, Tstg -55 to 150 Soldering Recommendations (Peak Temperature) d, e °C 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM Maximum Junction-to-Ambient b, f t5s RthJA 28 36 Maximum Junction-to-Case (Drain) Steady State RthJC 5.3 6.5 UNIT °C/W Notes a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 °C/W. S14-0208-Rev. B, 10-Feb-14 Document Number: 62925 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA446DJ www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 150 - - - V 73 - - -6 - 2.5 - 3.5 V nA Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS/TJ ID = 250 μA VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 VDS = 150 V, VGS = 0 V - - 1 VDS = 150 V, VGS = 0 V, TJ = 55 °C - - 10 VDS 5 V, VGS = 10 V 10 - - VGS = 10 V, ID = 3 A - 0.145 0.177 VGS = 7.5 V, ID = 2 A - 0.151 0.185 VGS = 6 V, ID = 1 A - 0.165 0.250 VDS = 10 V, ID = 3 A - 6 - - 230 - VDS = 75 V, VGS = 0 V, f = 1 MHz - 47 - - 8 - - 5.3 8 - 4.3 6.5 Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Current a ID(on) Drain-Source On-State Resistance a Forward Transconductance a Dynamic RDS(on) gfs mV/°C μA A S b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg VDS = 75 V, VGS = 10 V, ID = 3.5 A VDS = 75 V, VGS = 7.5 V, ID = 3.5 A Gate-Source Charge Qgs Gate-Drain Charge Qgd Output Charge Qoss VDS = 75 V, VGS = 0 V - 8.5 - Rg f = 1 MHz 0.5 2.3 4.6 - 5 10 - 13 25 - 10 20 tf - 10 20 td(on) - 10 20 - 40 80 Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tr td(off) VDD = 75 V, RL = 29 , ID 2.6 A, VGEN = 10 V, Rg = 1 VDD = 75 V, RL = 29 , ID 2.6 A, VGEN = 6 V, Rg = 1 tf - 1.2 - - 1.8 - - 5 10 - 10 20 pF nC ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current (t = 100 μs) ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C IS = 3.5 A IF = 3.5 A, dI/dt = 100 A/μs, TJ = 25 °C - - 12 - - 10 - 0.9 1.2 V - 51 100 ns - 100 200 nC - 43 - - 8 - A ns Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S14-0208-Rev. B, 10-Feb-14 Document Number: 62925 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA446DJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 2.0 VGS = 10 V thru 6 V 1.6 6 ID - Drain Current (A) ID - Drain Current (A) 8 VGS = 5 V 4 2 1.2 0.8 TC = 25 °C TC = 125 °C 0.4 VGS = 4 V TC = - 55 °C 0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 1.0 2.0 3.0 4.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.250 5.0 350 300 VGS = 7.5 V VGS = 6 V C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.200 0.150 VGS = 10 V 0.100 250 Ciss 200 150 Coss 100 0.050 50 0.000 Crss 0 0 2 4 6 8 10 0 20 40 60 80 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 100 1.8 10 ID = 3.5 A 8 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) VGS = 10 V, 7.5 V VDS = 75 V VDS = 37.5 V 6 VDS = 120 V 4 2 ID = 3 A 1.6 1.4 VGS = 6 V 1.2 1.0 0.8 0.6 0.4 0 0 1 2 3 4 5 6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S14-0208-Rev. B, 10-Feb-14 150 Document Number: 62925 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA446DJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.400 100 ID = 3 A RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0.320 10 TJ = 150 °C TJ = 25 °C 1 TJ = 125 °C 0.240 0.160 TJ = 25 °C 0.080 0.000 0.1 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 3.6 30 3.4 25 3.2 Power (W) VGS(th) (V) 20 3.0 2.8 ID = 250 μA 15 10 2.6 5 2.4 2.2 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) 0.1 1 10 100 1000 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 ID - Drain Current (A) Limited by RDS(on)* Limited by IDM 10 Limited by IDon 100 μs 1 1 ms 10 ms 0.1 100 ms 1s 10 s DC TA = 25 °C 0.01 BVDSS Limited 0.001 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S14-0208-Rev. B, 10-Feb-14 Document Number: 62925 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA446DJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 ID - Drain Current (A) 8 6 4 2 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* Power Dissipation (W) 20 15 10 5 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power, Junction-to-Case * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S14-0208-Rev. B, 10-Feb-14 Document Number: 62925 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA446DJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 80 C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.1 10-4 0.02 Single Pulse 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62925. S14-0208-Rev. B, 10-Feb-14 Document Number: 62925 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix b e PIN1 PIN3 PIN1 PIN2 PIN3 PIN5 K1 E1 E1 K PIN6 K3 D1 D1 K D2 D1 E3 E1 E2 K4 K L PIN2 b e L PowerPAK® SC70-6L PIN6 PIN4 K2 PIN5 K1 K2 BACKSIDE VIEW OF SINGLE PIN4 K2 BACKSIDE VIEW OF DUAL A D C A1 E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 D2 0.135 0.235 0.335 0.005 0.009 0.013 E 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 E2 0.345 0.395 0.445 0.014 0.016 0.018 E3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC K 0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP K3 0.225 TYP 0.009 TYP K4 L 0.355 TYP 0.175 0.275 0.014 TYP 0.375 T 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 0.05 0.10 0.15 0.002 0.004 0.006 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5934 Document Number: 73001 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single 0.300 (0.012) 0.650 (0.026) 0.350 (0.014) 0.275 (0.011) 0.550 (0.022) 0.475 (0.019) 2.200 (0.087) 1.500 (0.059) 0.870 (0.034) 0.235 (0.009) 0.355 (0.014) 0.350 (0.014) 1 0.650 (0.026) 0.300 (0.012) 0.950 (0.037) Dimensions in mm/(Inches) Return to Index APPLICATION NOTE Document Number: 70486 Revision: 21-Jan-08 www.vishay.com 11 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000