SiSS40DN-T1-GE3

SiSS40DN
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) () (Max.)
ID (A)f
0.0210 at VGS = 10 V
36.5
100
0.0230 at VGS = 7.5 V
35
0.0260 at VGS = 6 V
32
• ThunderFET® Technology Optimizes Balance
of RDS(on), Qg, Qsw and Qoss
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Qg (Typ.)
10 nC
PowerPAK 1212-8S
APPLICATIONS
3.3 mm
S
1
3.3 mm
D
8
D
7
D
6
S
2
S
3
•
•
•
•
•
•
0.75 mm
G
4
Primary side switch
Synchronous Rectification
DC/DC Conversion
Load Switching
Boost Converters
DC/AC Inverters
D
G
D
5
S
N-Channel MOSFET
Bottom View
Ordering Information:
SiSS40DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Symbol
VDS
Limit
Gate-Source Voltage
VGS
± 20
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
29
ID
TA = 25 °C
Pulsed Drain Current (t = 300 µs)
9.7a, b
7.8a, b
60
IDM
Single Pulse Avalanche Current
TC = 25 °C
3.1a, b
IAS
20
EAS
20
TC = 25 °C
33
PD
TA = 25 °C
W
3.7a, b
2.4a, b
TA = 70 °C
Operating Junction and Storage Temperature Range
mJ
52
TC = 70 °C
Maximum Power Dissipation
A
40g
IS
TA = 25 °C
L = 0.1 mH
Single Pulse Avalanche Energy
V
36.5
TC = 70 °C
TA = 70 °C
Continuous Source-Drain Diode Current
Unit
100
TJ, Tstg
- 55 to 150
Soldering Recommendations (Peak Temperature)c, d
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Symbol
a, e
Maximum Junction-to-Case (Drain)
Typical
Maximum
t  10 s
RthJA
26
33
Steady State
RthJC
1.9
2.4
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Maximum under steady state conditions is 81 °C/W.
f. Based on TC = 25 °C.
g. Package limited.
Document Number: 62881
S13-1668-Rev. A, 29-Jul-13
For technical questions, contact: [email protected]
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSS40DN
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
100
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS/TJ
VDS Temperature Coefficient
ID = 250 µA
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = 250 µA
IGSS
Gate-Source Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
V
61
mV/°C
- 6.8
3.5
V
VDS = 0 V, VGS = ± 20 V
± 100
nA
VDS = 100 V, VGS = 0 V
1
VDS = 100 V, VGS = 0 V, TJ = 55 °C
10
VDS 5 V, VGS = 10 V
2.3
20
µA
A
VGS 10 V, ID = 10 A
0.0176
0.0210
VGS 7.5 V, ID = 7 A
0.0190
0.0230
VGS 6 V, ID = 5 A
0.0216
0.0260
VDS = 15 V, ID = 10 A
25

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
845
VDS = 50 V, VGS = 0 V, f = 1 MHz
16
24
VDS = 50 V, VGS = 7.5 V, ID = 10 A
12.2
18.5
10
15
VDS = 50 V, VGS = 6 V, ID = 10 A
Gate-Drain Charge
Qgd
Qoss
VDS = 50 V, VGS = 0 V
Rg
f = 1 MHz
Gate Resistance
Rise Time
tr
td(off)
Fall Time
Turn-On Delay Time
Rise Time
35
0.9
1.5
14
28
5
10
28
tf
5
10
td(on)
12
24
5
10
td(off)
Fall Time
VDD = 50 V, RL = 5 
ID  10 A, VGEN = 6 V, Rg = 1 
0.2
23
14
tr
Turn-Off Delay Time
3.4
nC
4.2
td(on)
Turn-Off Delay Time
pF
VDS = 50 V, VGS = 10 V, ID = 10 A
Output Charge
Turn-On Delay Time
220
21.5
VDD = 50 V, RL = 5 
ID  10 A, VGEN = 10 V, Rg = 1 
tf
19
38
5
10

ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
40
TC = 25 °C
60
IS = 4 A, VGS 0 V
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.8
1.2
V
39
75
ns
49
95
nC
24
15
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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For technical questions, contact: [email protected]
Document Number: 62881
S13-1668-Rev. A, 29-Jul-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSS40DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
100
80
VGS = 10 V thru 7 V
ID - Drain Current (A)
ID - Drain Current (A)
80
VGS = 6 V
60
40
VGS = 5 V
60
TC = 25 °C
40
20
20
TC = 125 °C
VGS = 4 V
0.0
1.0
2.0
3.0
4.0
0.0
5.0
2.0
4.0
8.0
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
10.0
1500
0.0500
0.0400
VGS = 7.5 V
0.0300
0.0200
C - Capacitance (pF)
1200
VGS = 6.0 V
Ciss
900
Coss
600
300
VGS = 10 V
Crss
0
0.0100
0
16
32
48
64
0
80
16
32
48
64
80
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
2.0
10
ID = 10 A
VDS = 50 V
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
6.0
VDS - Drain-to-Source Voltage (V)
0.0600
RDS(on) - On-Resistance (Ω)
TC = - 55 °C
0
0
8
VDS = 25 V
6
VDS = 75 V
4
2
VGS = 10 V
ID = 10 A
1.7
1.4
VGS = 6.0 V
1.1
0.8
0.5
0
0.0
3.4
6.8
10.2
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 62881
S13-1668-Rev. A, 29-Jul-13
13.6
17.0
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
For technical questions, contact: [email protected]
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSS40DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.10
TJ = 150 °C
TJ = 25 °C
1
0.1
0.01
0.001
0.06
TJ = 125 °C
0.04
0.02
TJ = 25 °C
0.00
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
4
6
8
10
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.5
100
0.2
80
- 0.1
60
ID = 5 mA
- 0.4
- 0.7
- 1.0
- 25
0
25
50
40
20
ID = 250 μA
- 50
2
VSD - Source-to-Drain Voltage (V)
Power (W)
VGS(th) - Variance (V)
ID = 10 A
0.08
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
10
75
100
125
150
0
0.001
0.01
0.1
1
10
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
ID - Drain Current (A)
IDM Limited
10 I Limited
D
1
100 μs
1 ms
Limited by RDS(on)*
10 ms
100 ms
0.1
TA = 25 °C
Single Pulse
0.01
0.01
1s
10 s
BVDSS Limited
DC
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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For technical questions, contact: [email protected]
Document Number: 62881
S13-1668-Rev. A, 29-Jul-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSS40DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
40
ID - Drain Current (A)
32
24
16
8
0
0
25
50
75
100
125
150
0
25
TC - Case Temperature (°C)
65
2.0
52
1.6
39
1.2
Power (W)
Power (W)
Current Derating*
26
0.8
0.4
13
0.0
0
0
25
50
75
100
125
T C - Case Temperature (°C)
Power, Junction-to-Case
150
50
75
100
125
TA - Ambient Temperature (°C)
150
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 62881
S13-1668-Rev. A, 29-Jul-13
For technical questions, contact: [email protected]
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSS40DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 81 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
0.0001
0.001
4. Surface Mounted
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.01
0.0001
0.02
Single Pulse
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62881.
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For technical questions, contact: [email protected]
Document Number: 62881
S13-1668-Rev. A, 29-Jul-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
Case Outline for PowerPAK® 1212-8S
D
z
8
7
6
5
1
2
3
4
D1
5
6
7
8
2
1
L
K
E
E1
K1
d 0.10 C
2X
d 0.10 C
2X
3
0.10 C
C
A3
A
f
e
b
4
0.08 C
A1
d
DIM.
MILLIMETERS
MIN.
NOM.
A
0.67
A1
0
INCHES
MAX.
MIN.
NOM.
MAX.
0.75
0.83
0.027
0.030
0.033
-
0.05
0
-
0.002
A3
0.20 REF
0.008 REF
b
0.30 BSC
0.012 BSC
3.30 BSC
D
D1
2.15
0.130 BSC
2.35
0.084
1.80
0.063
3.30 BSC
E
E1
2.25
1.60
1.70
0.088
0.092
0.130 BSC
0.067
0.071
e
0.65 BSC
0.026 BSC
K
0.76 TYP
0.030 TYP
K1
0.41 TYP
0.016 TYP
L
0.43 BSC
0.017 BSC
z
0.525 TYP
0.021 TYP
ECN: C12-0200-Rev. A, 12-Mar-12
DWG: 6008
Note
• Millimeters will govern.
Revision: 12-Mar-12
1
Document Number: 63919
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single
0.152
(3.860)
0.039
0.068
(0.990)
(1.725)
0.010
(0.255)
(2.390)
0.094
0.088
(2.235)
0.016
(0.405)
0.026
(0.660)
0.025
0.030
(0.635)
(0.760)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72597
Revision: 21-Jan-08
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000