95770

1. DATE
(YYMMDD)
98-03-13
NOTICE OF REVISION (NOR)
Form Approved
OMB No. 0704-0188
THIS REVISION DESCRIBED BELOW HAS BEEN AUTHORIZED FOR THE DOCUMENT LISTED.
Public reporting burden for this collection is estimated to average 2 hours per response, including the time for reviewing
instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the
collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information,
including suggestions for reducing this burden, to Department of Defense, Washington Headquarters Services, Directorate for
Information Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302, and to the Office of
Management and Budget, Paperwork Reduction Project (0704-0188), Washington, DC 20503.
PLEASE DO NOT RETURN YOUR COMPLETED FORM TO EITHER OF THESE ADDRESSED. RETURN COMPLETED
FORM TO THE GOVERNMENT ISSUING CONTRACTING OFFICER FOR THE CONTRACT/ PROCURING ACTIVITY
NUMBER LISTED IN ITEM 2 OF THIS FORM.
2. PROCURING
ACTIVITY NO.
3. DODAAC
b. ADDRESS (Street, City, State, Zip Code)
Defense Supply Center, Columbus
3990 East Broad Street
Columbus, OH 43216-5000
4. ORIGINATOR
a. TYPED NAME (First, Middle Initial,
Last)
9. TITLE OF DOCUMENT
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, 4BIT BINARY SYNCHRINOUS COUNTER, TTL COMPATIBLE INPUTS,
MONOLITHIC SILICON
5. CAGE CODE
67268
6. NOR NO.
5962-R044-98
7. CAGE CODE
67268
8. DOCUMENT NO.
5962-95770
11. ECP NO.
10. REVISION LETTER
No users listed.
a. CURRENT
-
b. NEW
A
12. CONFIGURATION ITEM (OR SYSTEM) TO WHICH ECP APPLIES
All
13. DESCRIPTION OF REVISION
Sheet 1: Revisions ltr column; add "A".
Revisions description column; add "Changes in accordance with NOR 5962-R044-98".
Revisions date column; add "98-03-13".
Revision level block; add "A".
Rev status of sheets; for sheets 1, 4, and 18 through 24, add "A".
Sheet 4: Add new paragraph which states; "3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to
this document."
Revision level block; add "A".
Sheets 18 through 24: Add attached appendix A.
CONTINUED ON NEXT SHEETS
14. THIS SECTION FOR GOVERNMENT USE ONLY
a. (X one)
X
(1) Existing document supplemented by the NOR may be used in manufacture.
(2) Revised document must be received before manufacturer may incorporate this change.
(3) Custodian of master document shall make above revision and furnish revised document.
c. TYPED NAME (First, Middle Initial, Last)
b. ACTIVITY AUTHORIZED TO APPROVE CHANGE FOR
GOVERNMENT
RAYMOND L. MONNIN
DSCC-VAS
d. TITLE
CHIEF, MICROELECTRONICS TEAM
15a. ACTIVITY ACCOMPLISHING REVISION
DSCC-VAS
DD Form 1695, APR 92
e. SIGNATURE
RAYMOND L. MONNIN
b. REVISION COMPLETED (Signature)
TIN H. LE
Previous editions are obsolete.
f. DATE SIGNED
(YYMMDD)
98-03-13
c. DATE SIGNED
(YYMMDD)
98-03-13
Document No: 5962-95770
Revision: A
NOR No: 5962-R044-98
Sheet: 2 of 8
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-95770
10. SCOPE
10.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified
Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturers
approved QM plan for use in monolithic microcircuits, multichip modules (MCMs), hybrids, electronic modules, or devices using
chip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes consisting of
military high reliability (device class Q) and space application (device Class V) are reflected in the Part or Identification Number
(PIN). When available a choice of Radiation Hardiness Assurance (RHA) levels are reflected in the PIN.
10.2 PIN. The PIN shall be as shown in the following example:
5962
R
Federal
Stock class
designator
95770
RHA
designator
(see 10.2.1)
01
V
9
A
Device
type
(see 10.2.2)
Device
class
designator
(see 10.2.3)
Die
code
Die
Details
(see 10.2.4)
Drawing Number
10.2.1 RHA designator. Device classes Q and V RHA identified die shall meet the MIL-PRF-38535 specified RHA levels. A
dash (-) indicates a non-RHA die.
10.2.2 Device type(s). The device type(s) shall identify the circuit function as follows:
Device type
Generic number
01
Circuit function
HCTS161A
Radiation hardened, SOS,
high speed CMOS, 4-bit
binary synchronous counter,
TTL compatible inputs.
10.2.3 Device class designator.
Device class
Q or V
Device requirements documentation
Certification and qualification to the die requirements of MIL-PRF-38535.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-95770
A
REVISION LEVEL
A
SHEET
18
Document No: 5962-95770
Revision: A
NOR No: 5962-R044-98
Sheet: 3 of 8
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-95770
10.2.4 Die Details. The die details designation shall be a unique letter which designates the die’s physical dimensions,
bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each
product and variant supplied to this appendix.
10.2.4.1 Die Physical dimensions.
Die Types
Figure number
01
A-1
10.2.4.2 Die Bonding pad locations and Electrical functions.
Die Types
Figure number
01
A-1
10.2.4.3 Interface Materials.
Die Types
Figure number
01
A-1
10.2.4.4 Assembly related information.
Die Types
Figure number
01
A-1
10.3 Absolute maximum ratings. See paragraph 1.3 within the body of this drawing for details.
10.4 Recommended operating conditions. See paragraph 1.4 within the body of this drawing for details.
20. APPLICABLE DOCUMENTS
20.1 Government specifications, standards, bulletin, and handbooks. Unless otherwise specified, the following
specifications, standards, bulletin, and handbook of the issue listed in that issue of the Department of Defense Index of
Specifications and Standards specified in the solicitation, form a part of this drawing to the extent specified herein.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-95770
A
REVISION LEVEL
A
SHEET
19
Document No: 5962-95770
Revision: A
NOR No: 5962-R044-98
Sheet: 4 of 8
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-95770
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
STANDARDS
DEPARTMENT OF DEFENSE
MIL-STD-883 - Test Method Standard Microcircuits.
HANDBOOK
DEPARTMENT OF DEFENSE
MIL-HDBK-103 - List of Standard Microcircuit Drawings.
(Copies of the specification, standards, bulletin, and handbook required by manufacturers in connection with specific
acquisition functions should be obtained from the contracting activity or as directed by the contracting activity).
20.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing shall take precedence.
30. REQUIREMENTS
30.1 Item Requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer’s Quality Management (QM) plan. The
modification in the QM plan shall not effect the form, fit or function as described herein.
30.2 Design, construction and physical dimensions. The design, construction and physical dimensions shall be as specified
in MIL-PRF-38535 and the manufacturer’s QM plan, for device classes Q and V and herein.
30.2.1 Die Physical dimensions. The die physical dimensions shall be as specified in 10.2.4.1 and on figure A-1.
30.2.2 Die bonding pad locations and electrical functions. The die bonding pad locations and electrical functions shall be as
specified in 10.2.4.2 and on figure A-1.
30.2.3 Interface materials. The interface materials for the die shall be as specified in 10.2.4.3 and on figure A-1.
30.2.4 Assembly related information. The assembly related information shall be as specified in 10.2.4.4 and figure A-1.
30.2.5 Truth table. The truth table shall be as defined within paragraph 3.2.3 of the body of this document.
30.2.6 Radiation exposure circuit. The radiation exposure circuit shall be as defined within paragraph 3.2.6 of the body of
this document.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-95770
A
REVISION LEVEL
A
SHEET
20
Document No: 5962-95770
Revision: A
NOR No: 5962-R044-98
Sheet: 5 of 8
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-95770
30.3 Electrical performance characteristics and post- irradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and post-irradiation parameter limits are as specified in table I of the body of this
document.
30.4 Electrical test requirements. The wafer probe test requirements shall include functional and parametric testing sufficient
to make the packaged die capable of meeting the electrical performance requirements in table I.
30.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a customer,
shall be identified with the wafer lot number, the certification mark, the manufacturer’s identification and the PIN listed in 10.2
herein. The certification mark shall be a “QML” or “Q” as required by MIL-PRF-38535.
30.6 Certification of compliance. For device classes Q and V, a certificate of compliance shall be required from a
QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 60.4 herein). The certificate of
compliance submitted to DSCC-VA prior to listing as an approved source of supply for this appendix shall affirm that the
manufacturer’s product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the requirements herein.
30.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535
shall be provided with each lot of microcircuit die delivered to this drawing.
40. QUALITY ASSURANCE PROVISIONS
40.1 Sampling and inspection. For device classes Q and V, die sampling and inspection procedures shall be in accordance
with MIL-PRF-38535 or as modified in the device manufacturer’s Quality Management (QM) plan. The modifications in the QM
plan shall not effect the form, fit or function as described herein.
40.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in the
manufacturer’s QM plan. As a minimum it shall consist of:
a) Wafer Lot acceptance for Class V product using the criteria defined within MIL-STD-883 TM 5007.
b) 100% wafer probe (see paragraph 30.4).
c) 100% internal visual inspection to the applicable class Q or V criteria defined within MIL-STD-883 TM2010
or the alternate procedures allowed within MIL-STD-883 TM5004.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-95770
A
REVISION LEVEL
A
SHEET
21
Document No: 5962-95770
Revision: A
NOR No: 5962-R044-98
Sheet: 6 of 8
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-95770
40.3 Conformance inspection.
40.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured (see
30.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing of
packaged die shall be as specified in table IIA herein. Group E tests and conditions are as specified within paragraphs 4.4.4.1,
4.4.4.1.1, 4.4.4.2, 4.4.4.3, and 4.4.4.4.
50. DIE CARRIER
50.1 Die carrier requirements. The requirements for the die carrier shall be in accordance with the manufacturer’s QM plan
or as specified in the purchase order by the acquiring activity. The die carrier shall provide adequate physical, mechanical and
electrostatic protection.
60. NOTES
60.1 Intended use. Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with
MIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original equipment), design applications and
logistics purposes.
60.2 Comments. Comments on this appendix should be directed to DSCC-VA, Columbus, Ohio, 43216-5000 or telephone
(614)-692-0674.
60.3 Abbreviations, symbols and definitions. The abbreviations, symbols, and definitions used herein are defined with
MIL-PRF-38535 and MIL-STD-1331.
60.4 Sources of Supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.
The vendors listed within QML-38535 have submitted a certificate of compliance (see 30.6 herein) to DSCC-VA and have
agreed to this drawing.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-95770
A
REVISION LEVEL
A
SHEET
22
Document No: 5962-95770
Revision: A
NOR No: 5962-R044-98
Sheet: 7 of 8
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-95770
FIGURE A-1
o DIE PHYSICAL DIMENSIONS
Die Size:
Die Thickness:
x
2190 x 2650 microns.
21 +/-2 mils.
DIE BONDING PAD LOCATIONS AND ELECTRICAL FUNCTIONS
The following metallization diagram supplies the locations and electrical functions of the bonding pads. The internal
metallization layout and alphanumeric information contained within this diagram may or may not represent the actual circuit
defined by this SMD.
NOTE: Pad numbers reflect terminal numbers when placed in Case Outlines E, X (see Figure 1).
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-95770
A
REVISION LEVEL
A
SHEET
23
Document No: 5962-95770
Revision: A
NOR No: 5962-R044-98
Sheet: 8 of 8
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-95770
o INTERFACE MATERIALS
Top Metallization:
SiAl
11.0kA +/- 1kA
Backside Metallization
None
Glassivation
Type:
Thickness
SiO2
13.0kA +/- 2.6kA
Substrate:
Silicon on Sapphire (SOS)
o ASSEMBLY RELATED INFORMATION
Substrate Potential:
Insulator
Special assembly
instructions:
Bond pad #16 (VCC) first.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-95770
A
REVISION LEVEL
A
SHEET
24
STANDARD MICROCIRCUIT DRAWING BULLETIN
DATE: 98-03-13
Approved sources of supply for SMD 5962-95770 are listed below for immediate acquisition information only and shall be added
to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be revised to include the
addition or deletion of sources. The vendors listed below have agreed to this drawing and a certificate of compliance has been
submitted to and accepted by DSCC-VA. This bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML38535.
Standard
microcircuit drawing
PIN
Vendor
CAGE
number
Vendor
similar
PIN 1/
5962R9577001V9A
34371
HCTS161AHMSR
1/ Caution. Do not use this number for item acquisition.
Items acquired to this number may not satisfy the
performance requirements of this drawing.
Vendor CAGE
number
34371
Vendor name
and address
Harris Semiconductor
P.O. Box 883
Melbourne, FL 32902-0883
The information contained herein is disseminated for convenience only and the
Government assumes no liability whatsoever for any inaccuracies in the
information bulletin.
REVISIONS
LTR
DESCRIPTION
APPROVED
DATE (YR-MO-DA)
REV
SHEET
REV
SHEET
15
16
17
REV STATUS
OF SHEETS
REV
PMIC N/A
PREPARED BY
Thanh V. Nguyen
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS
AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
SHEET
1
2
3
4
5
6
7
8
9
10
11
12
13
14
DEFENSE ELECTRONICS SUPPLY CENTER
DAYTON, OHIO 45444
CHECKED BY
Thanh V. Nguyen
APPROVED BY
Monica L. Poelking
DRAWING APPROVAL DATE
95-10-30
REVISION LEVEL
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH
SPEED CMOS, 4-BIT BINARY SYNCHRONOUS COUNTER,
TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
SIZE
A
CAGE CODE
67268
5962-95770
AMSC N/A
SHEET
1
DESC FORM 193
JUL 94
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
OF
17
5962-E014-96
1. SCOPE
1.1 Scope. This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product
assurance classes consisting of military high reliability (device classes Q and M) and space application (device class V), and a
choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class M
microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of
MIL-STD-883 in conjunction with compliant non-JAN devices". When available, a choice of Radiation Hardness Assurance
(RHA) levels are reflected in the PIN.
1.2 PIN. The PIN shall be as shown in the following example:
5962
R
Federal
stock class
designator
95770
RHA
designator
(see 1.2.1)
\
01
V
X
C
Device
type
(see 1.2.2)
/
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
\/
Drawing number
1.2.1 RHA designator. Device class M RHA marked devices shall meet the MIL-I-38535 appendix A specified RHA levels and
shall be marked with the appropriate RHA designator. Device classes Q and V RHA marked devices shall meet the MIL-I-38535
specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) shall identify the circuit function as follows:
Device type
Generic number
01
HCTS161A
Circuit function
Radiation hardened, SOS, high speed CMOS,
4-bit binary synchronous counter, TTL
compatible inputs
1.2.3 Device class designator. The device class designator shall be a single letter identifying the product assurance level as
follows:
Device class
M
Q or V
Device requirements documentation
Vendor self-certification to the requirements for non-JAN class B microcircuits in
accordance with 1.2.1 of MIL-STD-883
Certification and qualification to MIL-I-38535
1.2.4 Case outline(s). The case outline(s) shall be as designated in MIL-STD-1835 and as follows:
Outline letter
E
X
Descriptive designator
Terminals
Package style
16
16
Dual-in-line
Flat pack
CDIP2-T16
CDFP4-F16
1.2.5 Lead finish. The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein) for class M or MIL-I-38535 for classes
Q and V. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in
specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.
SIZE
STANDARD
MICROCIRCUIT DRAWING
DEFENSE ELECTRONICS SUPPLY CENTER
DAYTON, OHIO 45444
DESC FORM 193A
JUL 94
5962-95770
A
REVISION LEVEL
SHEET
2
1.3 Absolute maximum ratings. 1/ 2/ 3/
Supply voltage range (VCC ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC input voltage range (VIN ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC output voltage range (VOUT ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC input current, any one input (IIN ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC output current, any one output (IOUT ) . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range (TSTG ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature (soldering, 10 seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal resistance, junction-to-case (JC ):
Case outline E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Case outline X . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal resistance, junction-to-ambient (JA):
Case outline E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Case outline X . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction temperature (TJ ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum package power dissipation at TA = +125(C (PD ): 4/
Case outline E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Case outline X . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
-0.5 V dc to +7.0 V dc
-0.5 V dc to VCC + 0.5 V dc
-0.5 V dc to VCC + 0.5 V dc
±10 mA
±25 mA
-65(C to +150(C
+265(C
24(C/W
29(C/W
73(C/W
114(C/W
+175(C
0.68 W
0.44 W
1.4 Recommended operating conditions. 2/ 3/
Supply voltage range (VCC ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage range (VIN ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output voltage range (VOUT ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum low level input voltage (VIL ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Minimum high level input voltage (VIH ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Case operating temperature range (TC ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum input rise and fall time at VCC = 4.5 V (tr, tf) . . . . . . . . . . . . . . . . . . .
Radiation features:
Total dose . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single event phenomenon (SEP) effective
linear energy threshold (LET) no upsets (see 4.4.4.4) . . . . . . . . . . . . . . . .
Dose rate upset (20 ns pulse) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Latch-up . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Dose rate survivability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+4.5 V dc to +5.5 V dc
+0.0 V dc to VCC
+0.0 V dc to VCC
0.8 V
VCC/2
-55(C to +125(C
100 ns/V
> 2 x 105 Rads (Si)
> 100 MeV/(cm2/mg) 5/
> 1 x 1010 Rads (Si)/s 5/
None 5/
> 1 x 1012 Rads (Si)/s 5/
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, bulletin, and handbook. Unless otherwise specified, the following specification,
standards, bulletin, and handbook of the issue listed in that issue of the Department of Defense Index of Specifications and
Standards specified in the solicitation, form a part of this drawing to the extent specified herein.
SPECIFICATION
MILITARY
MIL-I-38535 - Integrated Circuits, Manufacturing, General Specification for.
1/
Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
2/
Unless otherwise noted, all voltages are referenced to GND.
3/
The limits for the parameters specified herein shall apply over the full specified VCC range and case temperature range of
-55(C to +125(C unless otherwise noted.
4/
If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based on
JA) at the following rate:
Case outline E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.7 mW/(C
Case outline X . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.8 mW/(C
5/ Guaranteed by design or process but not tested.
SIZE
STANDARD
MICROCIRCUIT DRAWING
DEFENSE ELECTRONICS SUPPLY CENTER
DAYTON, OHIO 45444
DESC FORM 193A
JUL 94
5962-95770
A
REVISION LEVEL
SHEET
3
STANDARDS
MILITARY
MIL-STD-883 - Test Methods and Procedures for Microelectronics.
MIL-STD-973 - Configuration Management.
MIL-STD-1835 - Microcircuit Case Outlines.
BULLETIN
MILITARY
MIL-BUL-103 - List of Standardized Military Drawings (SMD's).
HANDBOOK
MILITARY
MIL-HDBK-780 - Standardized Military Drawings.
(Copies of the specification, standards, bulletin, and handbook required by manufacturers in connection with specific acquisition
functions should be obtained from the contracting activity or as directed by the contracting activity.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of
this drawing shall take precedence.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device class M shall be in accordance with 1.2.1 of MIL-STD-883,
"Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices" and as specified herein. The individual
item requirements for device classes Q and V shall be in accordance with MIL-I-38535 and as specified herein or as modified in
the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or
function as described herein.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in
MIL-STD-883 (see 3.1 herein) for device class M and MIL-I-38535 for device classes Q and V and herein.
3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.
3.2.3 Truth table. The truth table shall be as specified on figure 2.
3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3.
3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 4.
3.2.6 Irradiation test connections. The irradiation test connections shall be as specified in table III.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full
case operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical
tests for each subgroup are defined in table I.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. Marking for device class M shall be in accordance
with MIL-STD-883 (see 3.1 herein). In addition, the manufacturer's PIN may also be marked as listed in MIL-BUL-103. Marking
for device classes Q and V shall be in accordance with MIL-I-38535.
3.5.1 Certification/compliance mark. The compliance mark for device class M shall be a "C" as required in MIL-STD-883 (see
3.1 herein). The certification mark for device classes Q and V shall be a "QML" or "Q" as required in MIL-I-38535.
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DESC FORM 193A
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REVISION LEVEL
SHEET
4
TABLE I. Electrical performance characteristics.
Test
High level output
voltage
Symbol
VOH
Test conditions 1/
-55(C T C +125(C
unless otherwise specified
Device
type
All
For all inputs affecting
output under test
VIN = 2.25 V or 0.8 V
For all other inputs
VIN = VCC or GND
IOH = -50 µA
All
M, D, L, R
3/
All
For all inputs affecting
output under test
VIN = 2.25 V or 0.8 V
For all other inputs
VIN = VCC or GND
IOL = 50 µA
All
M, D, L, R
3/
IIL
5.5 V
All
For input under test, VIN = 5.5 V
For all other inputs
VIN = VCC or GND
All
5.5 V
All
M, D, L, R
3/
Input current low
4.5 V
All
For all inputs affecting
output under test
VIN = 2.75 V or 0.8 V
For all other inputs
VIN = VCC or GND
IOL = 50 µA
IIH
5.5 V
All
M, D, L, R
3/
Input current high
4.5 V
All
For all inputs affecting
output under test
VIN = 2.75 V or 0.8 V
For all other inputs
VIN = VCC or GND
IOH = -50 µA
VOL
Group A
subgroups
Limits 2/
Min
M, D, L, R
3/
Low level output
voltage
VCC
For input under test, VIN = GND
For all other inputs
VIN = VCC or GND
All
All
M, D, L, R
3/
5.5 V
Unit
Max
1, 2, 3
4.40
1
4.40
1, 2, 3
5.40
1
5.40
V
1, 2, 3
0.1
V
1
0.1
1, 2, 3
0.1
1
0.1
1
+0.5
2, 3
+5.0
1
+5.0
1
-0.5
2, 3
-5.0
1
-5.0
µA
µA
See footnotes at end of table.
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REVISION LEVEL
SHEET
5
TABLE I. Electrical performance characteristics - Continued.
Test
Output current high
(Source)
Symbol
IOH
4/
Test conditions 1/
-55(C T C +125(C
unless otherwise specified
Device
type
IOL
4/
For all inputs affecting output
under test, VIN = 4.5 V or 0.0 V
For all other inputs
VIN = VCC or GND
VOUT = 4.1 V
All
ICC
5/
For all inputs affecting output
under test, VIN = 4.5 V or 0.0 V
For all other inputs
VIN = VCC or GND
VOUT = 0.4 V
All
ICC
For inputs under test
VIN = VCC - 2.1 V
For all other inputs
VIN = VCC or GND
All
CIN
Power dissipation
capacitance
CPD
6/
Functional test
Propagation delay
time, CP to Qn
7/
tPHL1
8/
VIN = VCC or GND
All
5.5 V
All
VIH = 5.0 V, VIL = 0.0 V
f = 1 MHz, see 4.4.1c
Limits 2/
1
-4.8
2, 3
-4.0
1
-4.0
1
4.8
2, 3
4.0
1
4.0
mA
mA
1, 2, 3
1.6
mA
1
1.6
1
40.0
2, 3
750
1
750
µA
4
10
pF
All
5.0 V
4
231
pF
5, 6
285
CL = 50 pF
RL = 5006
See figure 4
All
4.5 V
All
4.5 V
All
All
All
M, D, L, R
3/
Max
5.0 V
All
CL = 50 pF
RL = 5006
See figure 4
Unit
All
VIH = 2.25 V, VIL = 0.80 V
See 4.4.1b
M, D, L, R
3/
M, D, L, R
3/
tPLH1
8/
5.5 V
All
M, D, L, R
3/
Input capacitance
4.5 V
All
M, D, L, R
3/ 5/
Quiescent supply
current
4.5 V
All
M, D, L, R
3/
Quiescent supply
current delta,
TTL input levels
Group A
subgroups
Min
M, D, L, R
3/
Output current low
(Sink)
VCC
4.5 V
7, 8
L
H
7
L
H
9
2.0
27.0
10, 11
2.0
29.0
9
2.0
29.0
9
2.0
27.0
10, 11
2.0
29.0
9
2.0
29.0
ns
See footnotes at end of table.
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REVISION LEVEL
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6
TABLE I. Electrical performance characteristics - Continued.
Test
Propagation delay
time, CP to TC
Symbol
tPHL2
8/
Test conditions 1/
-55(C TC +125(C
unless otherwise specified
Device
type
All
CL = 50 pF
RL = 500
See figure 4
6
M, D, L, R
3/
tPLH2
8/
tPHL3
8/
All
CL = 50 pF
RL = 500
See figure 4
6
All
CL = 50 pF
RL = 500
See figure 4
6
t
PHL4
8/
All
CL = 50 pF
RL = 500
See figure 4
6
t
PHL5
8/
All
C = 50 pF
L
RL = 500
See figure 4
6
Maximum clock
frequency
Setup time, high or
low, Pn to CP
tTHL,
tTLH
9/
All
C = 50 pF
L
RL = 500
See figure 4
6
All
CL = 50 pF
RL = 500
See figure 4
6
All
All
ts1
9/
ts2
9/
Setup time, high or
low, S
P
E to CP
ts3
9/
4.5 V
All
fMAX
9/
Setup time, high or
low, PE or TE to
CP
4.5 V
All
M, D, L, R
3/
Output transition
time
4.5 V
All
M, D, L, R
3/
Propagation delay
time, M
R to TC
4.5 V
All
M, D, L, R
3/
Propagation delay
time, M
R to Qn
4.5 V
All
M, D, L, R
3/
tPLH3
8/
4.5 V
All
M, D, L, R
3/
Propagation delay
time, TE to TC
VCC
All
All
4.5 V
4.5 V
4.5 V
4.5 V
4.5 V
Group A
subgroups
Limits 2/
Min
Max
9
2.0
29.0
10, 11
2.0
33.0
9
2.0
33.0
9
2.0
28.0
10, 11
2.0
31.0
9
2.0
31.0
9
2.0
25.0
10, 11
2.0
29.0
9
2.0
29.0
9
2.0
20.0
10, 11
2.0
21.0
9
2.0
21.0
9
2.0
38.0
10, 11
2.0
45.0
9
2.0
45.0
9
2.0
44.0
10, 11
2.0
51.0
9
2.0
51.0
9
15.0
10, 11
22.0
9
30.0
10, 11
20.0
9
10.0
10, 11
15.0
9
13.0
10, 11
20.0
9
12.0
10, 11
18.0
Unit
ns
ns
ns
ns
ns
MHz
ns
ns
ns
See footnotes at end of table.
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DESC FORM 193A
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REVISION LEVEL
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7
TABLE I. Electrical performance characteristics - Continued.
Test
Hold time, high or
low, Pn to CP
Symbol
th1
9/
Hold time, high or
low, PE or TE to
CP
th2
9/
Hold time, high or
low, S
P
E to CP
th3
9/
CP pulse width,
high or low
tw1
9/
M
R pulse width,
low
Recovery time, M
R
to CP
Test conditions 1/
-55(C T C +125(C
unless otherwise specified
Device
type
VCC
Group A
subgroups
Limits 2/
Min
CL = 50 pF
RL = 5006
See figure 4
All
All
All
All
All
tw2
9/
tREC
9/
All
4.5 V
4.5 V
4.5 V
4.5 V
4.5 V
4.5 V
Unit
Max
9
5.0
ns
10, 11
5.0
9
3.0
10, 11
3.0
9
3.0
10, 11
3.0
9
16.0
10, 11
24.0
9
20.0
10, 11
30.0
9
15.0
10, 11
22.0
ns
ns
ns
ns
ns
1/
Each input/output, as applicable, shall be tested at the specified temperature, for the specified limits, to the tests in table I
herein. Output terminals not designated shall be high level logic, low level logic, or open, except for the ICC and ICC tests,
the output terminals shall be open. When performing the ICC and ICC tests, the current meter shall be placed in the circuit
such that all current flows through the meter.
2/
For negative and positive voltage and current values, the sign designates the potential difference in reference to GND and
the direction of current flow respectively; and the absolute value of the magnitude, not the sign, is relative to the minimum
and maximum limits, as applicable, listed herein.
3/
Devices supplied to this drawing meet all levels M, D, L, and R of irradiation. However, this device is only tested at the "R"
level. Pre and post irradiation values are identical unless otherwise specified in table I. When performing post irradiation
electrical measurements for any RHA level, TA = +25(C.
4/
Force/Measure functions may be interchanged.
5/
This parameter is guaranteed, if not tested, to the limits specified in table I herein.
6/
Power dissipation capacitance (CPD ) determines both the power consumption (PD ) and current consumption (IS ). Where
PD = (CPD + CL) (VCC x VCC)f + (ICC x VCC) + (n x d x ICC x VCC)
IS = (CPD + CL) VCCf + ICC + (n x d x ICC)
f is the frequency of the input signal; n is the number of device inputs at TTL levels; and d is the duty cycle of the input
signal.
7/
The test vectors used to verify the truth table shall, at a minimum, test all functions of each input and output. All possible
input to output logic patterns per function shall be guaranteed, if not tested, to the truth table in figure 2 herein. For VOUT
measurements, L 0.5 V and H 4.0 V.
8/
AC limits at VCC = 5.5 V are equal to the limits at VCC = 4.5 V. For propagation delay tests, all paths must be tested.
9/
This parameter is guaranteed but not tested. This parameter is characterized upon initial design or process changes which
affect this characteristic.
SIZE
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DESC FORM 193A
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REVISION LEVEL
SHEET
8
Device type
All
Case outlines
E and X
Terminal
number
Terminal
symbol
Terminal
number
Terminal
symbol
1
MR
9
SPE
2
CP
10
TE
3
P0
11
Q3
4
P1
12
Q2
5
P2
13
Q1
6
P3
14
Q0
7
PE
15
TC
8
GND
16
VCC
FIGURE 1. Terminal connections.
Inputs
Outputs
Operating Mode
MR
CP
PE
TE
SPE
Pn
Qn
TC
Reset (Clear)
L
X
X
X
X
X
L
L
Parallel load
H
b
X
X
l
l
L
L
H
b
X
X
l
h
H
1/
Count
H
b
h
h
h 3/
X
Count
1/
Inhibit
H
X
l 2/
X
h 3/
X
qn
1/
H
X
X
l 2/
h 3/
X
qn
L
1/ The TC output is high when TE is high and the counter is at terminal count (HHHH).
2/ The high-to-low transition of PE or TE should only occur while CP is high for
conventional operation.
3/ The low-to-high transition of S
P
E should only occur while CP is high for conventional
operation.
H = High voltage level
L = Low voltage level
h = High voltage level one setup time prior to the low-to-high clock transition
l = Low voltage level one setup time prior to the low-to-high clock transition
X = Don't care
q = Lower case letters indicate the state of the referenced output prior to the low-to-high
clock transition
b = Low-to-high clock transition
FIGURE 2. Truth table.
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FIGURE 3. Logic diagram.
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FIGURE 4. Switching waveforms and test circuit.
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NOTES:
1.
CL = 50 pF minimum or equivalent (includes test jig and probe capacitance).
2.
RL = 5006 or equivalent.
3.
Input signal from pulse generator: VIN = 0.0 V to 3.0 V; PRR 10 MHz; tr 3.0 ns; tf 3.0 ns; tr and tf shall be measured
from 0.3 V to 2.7 V and from 2.7 V to 0.3 V, respectively.
FIGURE 4. Switching waveforms and test circuit - Continued.
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3.6 Certificate of compliance. For device class M, a certificate of compliance shall be required from a manufacturer in order to
be listed as an approved source of supply in MIL-BUL-103 (see 6.7.2 herein). For device classes Q and V, a certificate of
compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see
6.7.1 herein). The certificate of compliance submitted to DESC-EC prior to listing as an approved source of supply for this
drawing shall affirm that the manufacturer's product meets, for device class M, the requirements of MIL-STD-883 (see 3.1
herein), or for device classes Q and V, the requirements of MIL-I-38535 and the requirements herein.
3.7 Certificate of conformance. A certificate of conformance as required for device class M in MIL-STD-883 (see 3.1 herein)
or for device classes Q and V in MIL-I-38535 shall be provided with each lot of microcircuits delivered to this drawing.
3.8 Notification of change for device class M. For device class M, notification to DESC-EC of change of product (see 6.2
herein) involving devices acquired to this drawing is required for any change as defined in MIL-STD-973.
3.9 Verification and review for device class M. For device class M, DESC, DESC's agent, and the acquiring activity retain the
option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made
available onshore at the option of the reviewer.
3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in
microcircuit group number 40 (see MIL-I-38535, appendix A).
4. QUALITY ASSURANCE PROVISIONS
4.1 Sampling and inspection. For device class M, sampling and inspection procedures shall be in accordance with
MIL-STD-883 (see 3.1 herein). For device classes Q and V, sampling and inspection procedures shall be in accordance with
MIL-I-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall
not affect the form, fit, or function as described herein.
4.2 Screening. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be
conducted on all devices prior to quality conformance inspection. For device classes Q and V, screening shall be in accordance
with MIL-I-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection.
4.2.1 Additional criteria for device class M.
a.
b.
Burn-in test, method 1015 of MIL-STD-883.
(1)
Test condition A, B, C or D. The test circuit shall be maintained by the manufacturer under document revision level
control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify
the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test
method 1015.
(2)
T A = +125(C, minimum.
Interim and final electrical test parameters shall be as specified in table IIA herein.
4.2.2 Additional criteria for device classes Q and V.
a.
The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the
device manufacturer's QM plan in accordance with MIL-I-38535. The burn-in test circuit shall be maintained under
document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with
MIL-I-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test
method 1015.
b.
Interim and final electrical test parameters shall be as specified in table IIA herein.
c.
Additional screening for device class V beyond the requirements of device class Q shall be as specified in appendix B of
MIL-I-38535 or as modified in the device manufacturer's Quality Management (QM) plan.
4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in
accordance with MIL-I-38535. Inspections to be performed shall be those specified in MIL-I-38535 and herein for groups A, B, C,
D, and E inspections (see 4.4.1 through 4.4.4).
4.3.1 Electrostatic discharge sensitivity (ESDS) qualification inspection . ESDS testing shall be performed in accordance with
MIL-STD-883, method 3015. ESDS testing shall be measured only for initial qualification and after process or design changes
which may affect ESDS classification.
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TABLE IIA. Electrical test requirements.
Test requirements
Subgroups
(in accordance with
MIL-STD-883,
TM 5005, table I)
Subgroups
(in accordance with
MIL-I-38535, table III)
Device class M
Device class Q
Device class V
Interim electrical
parameters (see 4.2)
1, 7, 9
1, 7, 9
1, 7, 9
Final electrical
parameters (see 4.2)
1, 2, 3, 7,
8, 9, 10, 11
1/
1, 2, 3, 7,
8, 9, 10, 11
1/
1, 2, 3, 7,
8, 9, 10, 11
2/ 3/
Group A test
requirements (see 4.4)
1, 2, 3, 4, 5, 6,
7, 8, 9, 10, 11
1, 2, 3, 4, 5, 6,
7, 8, 9, 10, 11
1, 2, 3, 4, 5, 6,
7, 8, 9, 10, 11
Group C end-point electrical
parameters (see 4.4)
1, 2, 3, 7, 8, 9,
10, 11
1, 2, 3, 7, 8, 9,
10, 11
1, 2, 3, 7, 8, 9,
10, 11 3/
Group D end-point electrical
parameters (see 4.4)
1, 7, 9
1, 7, 9
1, 7, 9
Group E end-point electrical
parameters (see 4.4)
1, 7, 9
1, 7, 9
1, 7, 9
1/ PDA applies to subgroups 1 and 7.
2/ PDA applies to subgroups 1, 7, 9, and 's.
3/ Delta limits as specified in table IIB herein shall be required where specified, and the delta
values shall be completed with reference to the zero hour electrical parameters (see table I).
TABLE IIB. Burn-in and operating life test, Delta parameters (+25(C).
Parameters 1/
Delta limits
ICC
+12 µA
IOL/IOH
-15%
1/ These parameters shall be recorded before and after the required burn-in
and life test to determine delta limits.
4.4 Conformance inspection. Quality conformance inspection for device class M shall be in accordance with MIL-STD-883
(see 3.1 herein) and as specified herein. Inspections to be performed for device class M shall be those specified in method 5005
of MIL-STD-883 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). Technology conformance
inspection for classes Q and V shall be in accordance with MIL-I-38535 or as specified in QM plan including groups A, B, C, D,
and E inspections and as specified herein except where option 2 of MIL-I-38535 permits alternate in-line control testing.
4.4.1 Group A inspection.
a.
Tests shall be as specified in table IIA herein.
b.
For device class M, subgroups 7 and 8 tests shall be sufficient to verify the truth table in figure 2 herein. For device
classes Q and V, subgroups 7 and 8 shall include verifying the functionality of the device.
c.
CIN and CPD shall be measured only for initial qualification and after process or design changes which may affect
capacitance. CIN shall be measured between the designated terminal and GND at a frequency of 1 MHz. For CIN and
CPD, tests shall be sufficient to validate the limits defined in table I herein.
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4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883:
a.
Test condition A, B, C or D. The test circuit shall be maintained by the manufacturer under document revision level
control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method
1005.
b.
T A = +125(C, minimum.
c.
Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.
4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature,
or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-I-38535. The test
circuit shall be maintained under document revision level control by the device manufacturer's TRB, in accordance with
MIL-I-38535, and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005.
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured
(see 3.5 herein). RHA levels for device classes M, Q, and V shall be as specified in MIL-I-38535. End-point electrical
parameters shall be as specified in table IIA herein.
4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883, test
method 1019 and as specified herein.
4.4.4.1.1 Accelerated aging testing. Accelerated aging testing shall be performed on all devices requiring a RHA level greater
than 5k rads (Si). The post-anneal end-point electrical parameter limits shall be as specified in table I herein and shall be the
pre-irradiation end-point electrical parameter limits at 25(C ±5(C. Testing shall be performed at initial qualification and after any
design or process changes which may affect the RHA response of the device.
4.4.4.2 Dose rate induced latchup testing. Dose rate induced latchup testing shall be performed in accordance with test
method 1020 of MIL-STD-883 and as specified herein (see 1.4 herein). Tests shall be performed on devices, SEC, or approved
test structures at technology qualification and after any design or process changes which may effect the RHA capability of the
process.
4.4.4.3 Dose rate upset testing. Dose rate upset testing shall be performed in accordance with test method 1021 of
MIL-STD-883 and herein (see 1.4 herein).
a.
Transient dose rate upset testing shall be performed at initial qualification and after any design or process changes
which may affect the RHA performance of the devices. Test 10 devices with 0 defects unless otherwise specified.
b.
Transient dose rate upset testing for class Q and V devices shall be performed as specified by a TRB approved
radiation hardness assurance plan and MIL-I-38535.
TABLE III. Irradiation test connections.
Open
Ground
VCC = 5 V ±0.5 V
11, 12, 13, 14, 15
8
1, 2. 3. 4. 5. 6. 7, 9,
10, 16
NOTE: Each pin except VCC and GND will have a resistor of 47 k6 ±5% for irradiation testing.
SIZE
STANDARD
MICROCIRCUIT DRAWING
DEFENSE ELECTRONICS SUPPLY CENTER
DAYTON, OHIO 45444
DESC FORM 193A
JUL 94
5962-95770
A
REVISION LEVEL
SHEET
15
4.4.4.4 Single event phenomena (SEP). SEP testing shall be required on class V devices (see 1.4 herein). SEP testing shall
be performed on a technology process on the Standard Evaluation Circuit (SEC) or alternate SEP test vehicle as approved by
the qualifying activity at initial qualification and after any design or process changes which may affect the upset or latchup
characteristics. The recommended test conditions for SEP are as follows:
a.
The ion beam angle of incidence shall be between normal to the die surface and 60( to the normal, inclusive (i.e. 0( angle 60(). No shadowing of the ion beam due to fixturing or package related effects is allowed.
b.
The fluence shall be 100 errors or 106 ions/cm2.
c.
The flux shall be between 102 and 105 ions/cm2/s. The cross-section shall be verified to be flux independent by
measuring the cross-section at two flux rates which differ by at least an order of magnitude.
d.
The particle range shall be 20 micron in silicon.
e.
The test temperature shall be +25(C and the maximum rated operating temperature ±10(C.
f.
Bias conditions shall be defined by the manufacturer for the latchup measurements.
g.
Test four devices with zero failures.
4.5 Methods of inspection. Methods of inspection shall be specified as follows:
4.5.1 Voltage and current. Unless otherwise specified, all voltages given are referenced to the microcircuit GND terminal.
Currents given are conventional current and positive when flowing into the referenced terminal.
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-STD-883 (see 3.1 herein) for
device class M and MIL-I-38535 for device classes Q and V.
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
(original equipment), design applications, and logistics purposes.
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a
contractor-prepared specification or drawing.
6.1.2 Substitutability. Device class Q devices will replace device class M devices.
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for
the individual documents. This coordination will be accomplished in accordance with MIL-STD-973 using DD Form 1692,
Engineering Change Proposal.
6.3 Record of users. Military and industrial users shall inform Defense Electronics Supply Center when a system application
requires configuration control and which SMD's are applicable to that system. DESC will maintain a record of users and this list
will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic devices
(FSC 5962) should contact DESC-EC, telephone (513) 296-6047.
6.4 Comments. Comments on this drawing should be directed to DESC-EC, Dayton, Ohio 45444-5270, or telephone
(513) 296-5377.
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-I38535 and MIL-STD-1331.
GND . . . . . . . . . . . . . . . . . . . . .
ICC . . . . . . . . . . . . . . . . . . . . . .
IIL . . . . . . . . . . . . . . . . . . . . . . .
IIH . . . . . . . . . . . . . . . . . . . . . . .
TC . . . . . . . . . . . . . . . . . . . . . .
TA . . . . . . . . . . . . . . . . . . . . . .
VCC . . . . . . . . . . . . . . . . . . . . .
CIN . . . . . . . . . . . . . . . . . . . . . .
CPD . . . . . . . . . . . . . . . . . . . . .
Ground zero voltage potential.
Quiescent supply current.
Input current low.
Input current high.
Case temperature.
Ambient temperature.
Positive supply voltage.
Input terminal-to-GND capacitance.
Power dissipation capacitance.
SIZE
STANDARD
MICROCIRCUIT DRAWING
DEFENSE ELECTRONICS SUPPLY CENTER
DAYTON, OHIO 45444
DESC FORM 193A
JUL 94
5962-95770
A
REVISION LEVEL
SHEET
16
6.6 One part - one part number system. The one part - one part number system described below has been developed to
allow for transitions between identical generic devices covered by the three major microcircuit requirements documents
(MIL-H-38534, MIL-I-38535, and 1.2.1 of MIL-STD-883) without the necessity for the generation of unique PIN's. The three
military requirements documents represent different class levels, and previously when a device manufacturer upgraded military
product from one class level to another, the benefits of the upgraded product were unavailable to the Original Equipment
Manufacturer (OEM), that was contractually locked into the original unique PIN. By establishing a one part number system
covering all three documents, the OEM can acquire to the highest class level available for a given generic device to meet system
needs without modifying the original contract parts selection criteria.
Military documentation format
Example PIN
under new system
Manufacturing
source listing
Document
listing
New MIL-H-38534 Standard Microcircuit
Drawings
5962-XXXXXZZ(H or K)YY
QML-38534
MIL-BUL-103
New MIL-I-38535 Standard Microcircuit
Drawings
5962-XXXXXZZ(Q or V)YY
QML-38535
MIL-BUL-103
New 1.2.1 of MIL-STD-883 Standard
Microcircuit Drawings
5962-XXXXXZZ(M)YY
MIL-BUL-103
MIL-BUL-103
6.7 Sources of supply.
6.7.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.
The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein) to DESC-EC and have agreed to
this drawing.
6.7.2 Approved sources of supply for device class M. Approved sources of supply for class M are listed in MIL-BUL-103. The
vendors listed in MIL-BUL-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been submitted
to and accepted by DESC-EC.
6.8 Additional information. A copy of the following additional data shall be maintained and available from the device
manufacturer:
a. RHA upset levels.
b. Test conditions (SEP).
c. Number of upsets (SEP).
d. Number of transients (SEP).
e. Occurrence of latchup (SEP).
SIZE
STANDARD
MICROCIRCUIT DRAWING
DEFENSE ELECTRONICS SUPPLY CENTER
DAYTON, OHIO 45444
DESC FORM 193A
JUL 94
5962-95770
A
REVISION LEVEL
SHEET
17
STANDARD MICROCIRCUIT DRAWING SOURCE APPROVAL BULLETIN
DATE: 95-10-30
Approved sources of supply for SMD 5962-95770 are listed below for immediate acquisition only and shall be added
to MIL-BUL-103 and QML-38535 during the next revision. MIL-BUL-103 and QML-38535 will be revised to include the
addition or deletion of sources. The vendors listed below have agreed to this drawing and a certificate of compliance
has been submitted to and accepted by DESC-EC. This bulletin is superseded by the next dated revision of
MIL-BUL-103 and QML-38535.
Standard
microcircuit drawing
PIN
Vendor
CAGE
number
Vendor
similar
PIN 1/
5962R9577001VEC
34371
HCTS161ADMSR
5962R9577001VXC
34371
HCTS161AKMSR
1/ Caution. Do not use this number for item
acquisition. Items acquired to this number may not
satisfy the performance requirements of this drawing.
Vendor CAGE
number
34371
Vendor name
and address
Harris Semiconductor
P.O. Box 883
Melbourne, FL 32902-0883
The information contained herein is disseminated for convenience only and the
Government assumes no liability whatsoever for any inaccuracies in the
information bulletin.