MCP MCP ASSEMBLY F2223-21SH FEATURES ●High sensitivity ●High S/N ratio ●Wide dynamic range ●Center hole for beam line ●Compact and lightweight OVERVIEW APPLICATIONS This MCP assembly is a suitable detector for an electron or ion beam in SEM, SIM or Lithography. It is possible to detect some signal from a sample with high sensitivity, that can be performed with the compactness and the center hole of this assembly. It allows to set this assembly at close position to the sample and gives better efficiency in the beam detection. ●Scanning electron microscopy ●Scanning ion microscopy ●Electron lithography ●Mask aligner ●Electron beam measuring system ●Ion scattering spectroscopy ELECTRON GUN ELECTRON BEAM ANODE ELECTRON BEAM MCP (2-STAGE) F2223-21SH MESH SECONDARY ELECTRON (REFLECTING ELECTRON) SAMPLE TMCPC0001EB SECONDARY ELECTRON SAMPLE SPECIFICATIONS GENERAL Parameter MCP Channel Diameter Number of MCPs Effective Area MCP Center Dead Area Value 12 2 27 8 Unit µm — mm mm ELECTRICAL CHARACTERISTICS (Supply Voltage: 2 kV, Vacuum: 1.3 × 10-4 Pa, Operating Ambient Temperature: +25 °C) Parameter Gain (Min.) Resistance (Typ.) Dark Current (Max.) Value 1 × 106 20 to 100 120 Unit — MΩ pA· cm-2 Value 2 0.5 0.5 3 1.3 × 10-4 +10 to +40 150 Unit kV kV kV kV Pa °C °C MAXIMUM RATINGS Parameter MCP Supply Voltage (Max.) MCP-Out to Anode Supply Voltage (Max.) Mesh to MCP-In Supply Voltage Anode to Substrate Supply Voltage Operating Vacuum Condition A Ambient Operating Temperature Baking Temperature A ABetter vacuum than 1.3 × 10-4 Pa 41 8.6 MCP (2-STAGE) 10 27 EFFECTIVE AREA 4 × 2.6 PCD* 50.8 56.5 45° DEAD SPACE 8 MCP CENTER HOLE 6 CENTER PIPE (OUTER 5) CENTER PIPE (INNER 4) DIMENSIONAL OUTLINES (Unit: mm) 4× 1 6 1 234 3 1MESH LEAD 2MCP-IN LEAD 3MCP-OUT LEAD 4ANODE LEAD SUBSTRATE 1.6 TMCPA0002EH Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2015 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Electron Tube Division 314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected] Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: [email protected] France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: [email protected] United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44)1707-294888, Fax: (44)1707-325777 E-mail: [email protected] North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 SE-164 40 Kista, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: [email protected] TMCP1001E04 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39)02-93581733, Fax: (39)02-93581741 E-mail: [email protected] MAY 2015 IP China: Hamamatsu Photonics (China) Co., Ltd.: B1201 Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86)10-6586-6006, Fax: (86)10-6586-2866 E-mail: [email protected]