96642

1. DATE
(YYMMDD)
97-08-08
NOTICE OF REVISION (NOR)
Form Approved
OMB No. 0704-0188
THIS REVISION DESCRIBED BELOW HAS BEEN AUTHORIZED FOR THE DOCUMENT LISTED.
Public reporting burden for this collection is estimated to average 2 hours per response, including the time for reviewing
instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the
collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information,
including suggestions for reducing this burden, to Department of Defense, Washingtion Headquarters Services, Directorate for
Information Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302, and to the Office of
Management and Budget, Paperwork Reduction Project (0704-0188), Washington, DC 20503.PLEASE DO NOT RETURN
YOUR COMPLETED FORM TO EITHER OF THESE ADDRESSES. RETURN COMPLETED FORM TO THE GOVERNMENT
ISSUING CONTRACTING OFFICER FOR THE CONTRACT/ PROCURING ACTIVITY NUMBER LISTED IN ITEM 2 OF THIS
FORM.
b. ADDRESS (Street, City, State, Zip Code)
4. ORIGINATOR
2. PROCURING
ACTIVITY NO.
3. DODAAC
5. CAGE CODE
67268
6. NOR NO.
5962-R424-97
7. CAGE CODE
67268
8. DOCUMENT NO.
Defense Supply Center Columbus
a. TYPED NAME (First, Middle Initial,
Last)
3990 East Broad Street
Columbus, OH 43216-5000
9. TITLE OF DOCUMENT
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, 8-STAGE SHIFT
AND STORE BUS REGISTER, MONOLITHIC SILICON
5962-96642
11. ECP NO.
10. REVISION LETTER
No users listed.
a. CURRENT
A
b. NEW
B
12. CONFIGURATION ITEM (OR SYSTEM) TO WHICH ECP APPLIES
All
13. DESCRIPTION OF REVISION
Sheet 1: Revisions ltr column; add "B".
Revisions description column; add "Changes in accordance with NOR 5962-R424-97".
Revisions date column; add "97-08-08".
Revision level block; add "B".
Rev status of sheets; for sheets 23 change from "A" to “B”.
Rev status of sheets; for sheets 24 change from "A" to “B”.
Sheet 23: NOR 5962-R270-97 sheet 7 of Appendix A for Die Physical Dimensions for Die Thickness change from “21 +/-1 mils” to “20 +/1 mils”
Revision Level Block: change from “A” to “B”
Sheet 24: NOR 5962-R270-97 sheet 8 of Appendix A for Interface Materials for Glassivation Type change from “Phosphorous doped SIO2” to
“PSG “ and for Assembly Related Information for Substrate Potential change from “ Tied to VSS” to “Floating or Tied to VDD “
Revision Level Block: change from “A” to “B”
12. THIS SECTION FOR GOVERNMENT USE ONLY
a. (X one)
X
(1) Existing document supplemented by the NOR may be used in manufacture.
(2) Revised document must be received before manufacturer may incorporate this change.
(3) Custodian of master document shall make above revision and furnish revised document.
b. ACTIVITY AUTHORIZED TO APPROVE CHANGE FOR GOVERNMENT
c. TYPED NAME (First, Middle Initial, Last)
DSCC-VA
d. TITLE
Chief, Custom Microelectronics
15a. ACTIVITY ACCOMPLISHING REVISION
DSCC-VA
DD Form 1695, APR 92
e. SIGNATURE
RAYMOND MONNIN
b. REVISION COMPLETED (Signature)
RONALD COUCH
Previous editions are obsolete.
f. DATE SIGNED
(YYMMDD)
97-08-08
c. DATE SIGNED
(YYMMDD)
97-08-08
1. DATE
(YYMMDD)
97-04-04
NOTICE OF REVISION (NOR)
Form Approved
OMB No. 0704-0188
THIS REVISION DESCRIBED BELOW HAS BEEN AUTHORIZED FOR THE DOCUMENT LISTED.
Public reporting burden for this collection is estimated to average 2 hours per response, including the time for reviewing
instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the
collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information,
including suggestions for reducing this burden, to Department of Defense, Washington Headquarters Services, Directorate for
Information Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302, and to the Office of
Management and Budget, Paperwork Reduction Project (0704-0188), Washington, DC 20503.
PLEASE DO NOT RETURN YOUR COMPLETED FORM TO EITHER OF THESE ADDRESSED. RETURN COMPLETED
FORM TO THE GOVERNMENT ISSUING CONTRACTING OFFICER FOR THE CONTRACT/ PROCURING ACTIVITY
NUMBER LISTED IN ITEM 2 OF THIS FORM.
2. PROCURING
ACTIVITY NO.
3. DODAAC
b. ADDRESS (Street, City, State, Zip Code)
Defense Supply Center, Columbus
3990 East Broad Street
Columbus, OH 43216-5000
4. ORIGINATOR
a. TYPED NAME (First, Middle Initial,
Last)
9. TITLE OF DOCUMENT
MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, 8-STAGE
SHIFT AND STORE BUS REGISTER, MONOLITHIC SILICON
5. CAGE CODE
67268
6. NOR NO.
5962-R270-97
7. CAGE CODE
67268
8. DOCUMENT NO.
5962-96642
11. ECP NO.
10. REVISION LETTER
No users listed.
a. CURRENT
b. NEW
A
12. CONFIGURATION ITEM (OR SYSTEM) TO WHICH ECP APPLIES
All
13. DESCRIPTION OF REVISION
Sheet 1: Revisions ltr column; add "A".
Revisions description column; add "Changes in accordance with NOR 5962-R270-97".
Revisions date column; add "97-04-04".
Revision level block; add "A".
Rev status of sheets; add sheets “18 through 24”, for sheet 1, 4, and 18 through 24, add "A".
Sheet block; change “17” to “24”.
Sheet 4: Add new paragraph which states; "3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to
this document."
Revision level block; add "A".
Sheets 18 through 24: Add attached appendix A.
CONTINUED ON NEXT SHEET
14. THIS SECTION FOR GOVERNMENT USE ONLY
a. (X one)
X
(1) Existing document supplemented by the NOR may be used in manufacture.
(2) Revised document must be received before manufacturer may incorporate this change.
(3) Custodian of master document shall make above revision and furnish revised document.
c. TYPED NAME (First, Middle Initial, Last)
b. ACTIVITY AUTHORIZED TO APPROVE CHANGE FOR
GOVERNMENT
MONICA L. POELKING
DSCC-VAC
d. TITLE
CHIEF, CUSTOM MICROELECTRONICS TEAM
15a. ACTIVITY ACCOMPLISHING REVISION
DSCC-VAC
DD Form 1695, APR 92
e. SIGNATURE
MONICA L. POELKING
b. REVISION COMPLETED(Signature)
BERNARD J. MIESSE
Previous editions are obsolete.
f. DATE SIGNED
(YYMMDD)
97-04-04
c. DATE SIGNED
(YYMMDD)
97-04-04
Document No: 5962-96642
Revision: A
NOR No: 5962-R270-97
Sheet: 2 of 8
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-96642
10. SCOPE
10.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified
Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the
manufacturers approved QM plan for use in monolithic microcircuits, multichip modules (MCMs), hybrids, electronic modules,
or devices using chip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance
classes consisting of military high reliability (device class Q) and space application (device Class V) are reflected in the Part or
Identification Number (PIN). When available a choice of Radiation Hardiness Assurance (RHA) levels are reflected in the
PIN.
10.2 PIN. The PIN shall be as shown in the following example:
5962
R
Federal
Stock class
designator
96642
RHA
designator
(see 10.2.1)
01
V
9
Device
type
(see 10.2.2)
Device
class
designator
(see 10.2.3)
Die
code
A
Die
Details
(see 10.2.4)
Drawing Number
10.2.1 RHA designator. Device classes Q and V RHA identified die shall meet the MIL-PRF-38535 specified RHA levels.
A dash (-) indicates a non-RHA die.
10.2.2 Device type(s). The device type(s) shall identify the circuit function as follows:
Device type
Generic number
Circuit function
01
4094B
Radiation Hardened, CMOS,
8-stage shift and store bus
register.
02
4094BN
Radiation Hardened, CMOS,
8-stage shift and store bus
register, neutron irradiated die.
SIZE
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO 43216-5000
5962-96642
A
REVISION LEVEL
A
DESC FORM 193A
JUL 94
SHEET
18
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-96642
Document No: 5962-96642
Revision: A
NOR No: 5962-R270-97
Sheet: 3 of 8
10.2.3 Device class designator.
Device class
Q or V
Device requirements documentation
Certification and qualification to the die requirements of MIL-PRF-38535.
10.2.4 Die Details. The die details designation shall be a unique letter which designates the die’s physical dimensions,
bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each
product and variant supplied to this appendix.
10.2.4.1 Die Physical dimensions
.
Die Types
Figure number
01, 02
A-1
10.2.4.2 Die Bonding pad locations and Electrical functions
.
Die Types
Figure number
01, 02
A-1
10.2.4.3 Interface Materials.
Die Types
Figure number
01, 02
A-1
10.2.4.4 Assembly related information
.
01, 02
A-1
10.3 Absolute maximum ratings
. See paragraph 1.3 within the body of this drawing for details.
10.4 Recommended operating conditions. See paragraph 1.4 within the body of this drawing for details.
20. APPLICABLE DOCUMENTS
20.1 Government specifications, standards, bulletin, and handbooks
. Unless otherwise specified, the following
specifications, standards, bulletin, and handbook of the issue listed in that issue of the Department of Defense Index of
Specifications and Standards specified in the solicitation, form a part of this drawing to the extent specified herein.
SIZE
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO 43216-5000
5962-96642
A
REVISION LEVEL
A
DESC FORM 193A
JUL 94
SHEET
19
Document No: 5962-96642
Revision: A
NOR No: 5962-R270-97
Sheet: 4 of 8
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-96642
SPECIFICATION
MILITARY
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
STANDARDS
MIL-STD-883 - Test Methods and Procedures for Microelectronics.
HANDBOOK
MILITARY
MIL-HDBK-103 - List of Standardized Military Drawings (SMD’s).
(Copies of the specification, standards, bulletin, and handbook required by manufacturers in connection with specific
acquisition functions should be obtained from the contracting activity or as directed by the contracting activity).
20.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the
text of this drawing shall take precedence.
30. REQUIREMENTS
30.1 Item Requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer’s Quality Management (QM) plan. The
modification in the QM plan shall not effect the form, fit or function as described herein.
30.2 Design, construction and physical dimensions
. The design, construction and physical dimensions shall be as
specified in MIL-PRF-38535 and the manufacturer’s QM plan, for device classes Q and V and herein.
30.2.1 Die Physical dimensions
. The die physical dimensions shall be as specified in 10.2.4.1 and on figure A-1.
30.2.2 Die bonding pad locations and electrical functions
. The die bonding pad locations and electrical functions shall be
as specified in 10.2.4.2 and on figure A-1.
30.2.3 Interface materials. The interface materials for the die shall be as specified in 10.2.4.3 and on figure A-1.
30.2.4 Assembly related information
. The assembly related information shall be as specified in 10.2.4.4 and figure A-1.
30.2.5 Truth table(s). The truth table(s) shall be as defined within paragraph 3.2.3 of the body of this document.
SIZE
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO 43216-5000
5962-96642
A
REVISION LEVEL
A
DESC FORM 193A
JUL 94
SHEET
20
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-96642
Document No: 5962-96642
Revision: A
NOR No: 5962-R270-97
Sheet: 5 of 8
30.2.6 Radiation exposure circuit. The radiation exposure circuit shall be as defined within paragraph 3.2.5 of the body of
this document.
30.3 Electrical performance characteristics and post-irradiation parameter limits
. Unless otherwise specified herein, the
electrical performance characteristics and post-irradiation parameter limits are as specified in table I of the body of this
document.
30.4 Electrical test requirements
. The wafer probe test requirements shall include functional and parametric testing
sufficient to make the packaged die capable of meeting the electrical performance requirements in table I.
30.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a
customer, shall be identified with the wafer lot number, the certification mark, the manufacturer’s identification and the PIN
listed in 10.2 herein. The certification mark shall be a “QM” or “Q” as required by MIL-PRF-38535.
30.6 Certification of compliance
. For device classes Q and V, a certificate of compliance shall be required from a
QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 60.4 herein). The certificate of
compliance submitted to DSCC-VA prior to listing as an approved source of supply for this appendix shall affirm that the
manufacturer’s product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the requirements
herein.
30.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535
shall be provided with each lot of microcircuit die delivered to this drawing.
40. QUALITY ASSURANCE PROVISIONS
40.1 Sampling and inspection. For device classes Q and V, die sampling and inspection procedures shall be in
accordance with MIL-PRF-38535 or as modified in the device manufacturer’s Quality Management (QM) plan. The
modifications in the QM plan shall not effect the form, fit or function as described herein.
40.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in
the manufacturer’s QM plan. As a minimum it shall consist of:
a. Wafer Lot acceptance for Class V product using the criteria defined within MIL-STD-883 TM 5007.
b. 100% wafer probe (see paragraph 30.4).
c. 100% internal visual inspection to the applicable class Q or V criteria defined within MIL-STD-883 TM2010 or the
alternate procedures allowed within MIL-STD-883 TM5004.
40.3 Conformance inspection.
40.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured
(see 30.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical
testing of packaged die shall be as specified in table IIA herein. Group E tests and conditions are as specified within
paragraphs 4.4.4.1, 4.4.4.1.1, 4.4.4.2, 4.4.4.3, 4.4.4.4, and 4.4.4.5.
SIZE
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO 43216-5000
5962-96642
A
REVISION LEVEL
A
DESC FORM 193A
JUL 94
SHEET
21
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-96642
Document No: 5962-96642
Revision: A
NOR No: 5962-R270-97
Sheet: 6 of 8
50. DIE CARRIER
50.1 Die carrier requirements. The requirements for the die carrier shall be accordance with the manufacturer’s QM plan
or as specified in the purchase order by the acquiring activity. The die carrier shall provide adequate physical, mechanical
and electrostatic protection.
60. NOTES
60.1 Intended use. Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance
with MIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original equipment), design applications
and logistics purposes.
60.2 Comments. Comments on this appendix should be directed to DSCC-VA, Columbus, Ohio, 43216-5000 or
telephone (614)-692-0536.
60.3 Abbreviations, symbols and definitions
. The abbreviations, symbols, and definitions used herein are defined with
MIL-PRF-38535 and MIL-STD-1331.
60.4 Sources of Supply for device classes Q and .V Sources of supply for device classes Q and V are listed in QML38535. The vendors listed within QML-38535 have submitted a certificate of compliance (see 30.6 herein) to DSCC-VA and
have agreed to this drawing.
SIZE
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO 43216-5000
5962-96642
A
REVISION LEVEL
A
DESC FORM 193A
JUL 94
SHEET
22
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-96642
Document No: 5962-96642
Revision: A
NOR No: 5962-R270-97
Sheet: 7 of 8
FIGURE A-1
o DIE PHYSICAL DIMENSIONS
Die Size:
Die Thickness:
2286 x 2515 microns.
21 +/-1 mils.
o DIE BONDING PAD LOCATIONS AND ELECTRICAL FUNCTIONS
NOTE: Pad numbers reflect terminal numbers when placed in Case Outlines E, X (see Figure 1).
SIZE
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO 43216-5000
5962-96642
A
REVISION LEVEL
A
DESC FORM 193A
JUL 94
SHEET
23
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-96642
Document No: 5962-96642
Revision: A
NOR No: 5962-R270-97
Sheet: 8 of 8
o INTERFACE MATERIALS
Top Metallization:
Al
11.0kA - 14.0kA
Backside Metallization:
None.
Glassivation
Type:
Thickness:
Phosphorous doped SiO2
10.4kA - 15.6kA
Substrate:
Single crystal silicon.
o ASSEMBLY RELATED INFORMATION
Substrate Potential:
Tied to VSS.
Special assembly
instructions:
Bond pad #16 (VDD) first.
SIZE
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO 43216-5000
5962-96642
A
REVISION LEVEL
A
DESC FORM 193A
JUL 94
SHEET
24
STANDARD MICROCIRCUIT DRAWING BULLETIN
DATE: 97-04-04
Approved sources of supply for SMD 5962-96642 are listed below for immediate acquisition information only and shall be
added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be revised to include
the addition or deletion of sources. The vendors listed below have agreed to this drawing and a certificate of compliance has
been submitted to and accepted by DSCC-VA. This bulletin is superseded by the next dated revision of MIL-HDBK-103 and
QML-38535.
Standard
microcircuit drawing
PIN
Vendor
CAGE
number
Vendor
similar
PIN 1/
5962R9664201V9A
34371
CD4094BHSR
5962R9664202V9A
34371
CD4094BHNSR
1/ Caution. Do not use this number for item acquisition.
Items acquired to this number may not satisfy the
performance requirements of this drawing.
Vendor CAGE
number
34371
Vendor name
and address
Harris Semiconductor
P.O. Box 883
Melbourne, FL 32902-0883
The information contained herein is disseminated for convenience only and the
Government assumes no liability whatsoever for any inaccuracies in the
information bulletin.
REVISIONS
LTR
DESCRIPTION
DATE (YR-MO-DA)
APPROVED
REV
SHEET
REV
SHEET
15
16
17
REV STATUS
OF SHEETS
PMIC N/A
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
REV
SHEET
1
2
3
4
5
PREPARED BY
Larry T. Gauder
6
7
8
9
10
11
12
13
14
DEFENSE ELECTRONICS SUPPLY CENTER
DAYTON, OHIO 45444
CHECKED BY
Monica L. Poelking
APPROVED BY
Monica L. Poelking
MICROCIRCUIT, DIGITAL, RADIATION HARDENED
CMOS, 8-STAGE SHIFT AND STORE BUS REGISTER,
MONOLITHIC SILICON
DRAWING APPROVAL DATE
96-01-12
SIZE
REVISION LEVEL
A
SHEET
DESC FORM 193
JUL 94
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
CAGE CODE
5962-96642
67268
1
OF
17
5962-E215-96
1. SCOPE
1.1 Scope. This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product
assurance classes consisting of military high reliability (device classes Q and M) and space application (device class V), and a
choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class M
microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of
MIL-STD-883 in conjunction with compliant non-JAN devices". When available, a choice of Radiation Hardness Assurance (RHA)
levels are reflected in the PIN.
1.2 PIN. The PIN shall be as shown in the following example:
5962
R
01
V
X
C
96642
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
/
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
\/
Drawing number
1.2.1 RHA designator. Device class M RHA marked devices shall meet the MIL-I-38535 appendix A specified RHA levels and
shall be marked with the appropriate RHA designator. Device classes Q and V RHA marked devices shall meet the MIL-I-38535
specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) shall identify the circuit function as follows:
Device type
Generic number
01
4094B
02
4094BN
Circuit function
Radiation hardened CMOS 8 stage shift
and store bus register
Radiation hardened CMOS 8 stage shift
and store bus register with neutron
irradiated die
1.2.3 Device class designator. The device class designator shall be a single letter identifying the product assurance level as
follows:
Device class
Device requirements documentation
M
Vendor self-certification to the requirements for non-JAN class B microcircuits in
accordance with 1.2.1 of MIL-STD-883
Q or V
Certification and qualification to MIL-I-38535
1.2.4 Case outline(s). The case outline(s) shall be as designated in MIL-STD-1835 and as follows:
Outline letter
Descriptive designator
Terminals
E
X
CDIP2-T16
CDFP4-F16
16
16
Package style
dual-in-line package
flat package
1.2.5 Lead finish. The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein) for class M or MIL-I-38535 for classes Q
and V. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications
when lead finishes A, B, and C are considered acceptable and interchangeable without preference.
SIZE
STANDARD
MICROCIRCUIT DRAWING
DEFENSE ELECTRONICS SUPPLY CENTER
DAYTON, OHIO 45444
DESC FORM 193A
JUL 94
5962-96642
A
REVISION LEVEL
SHEET
2
1.3 Absolute maximum ratings. 1/ 2/ 3/
Supply voltage range (VDD) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC input current, any one input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Device dissipation per output transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range (TSTG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature (soldering, 10 seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal resistance, junction-to-case (JC):
Case E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Case X . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal resistance, junction-to-ambient JA):
Case E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Case X . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum power dissipation at TA = +125°C (PD): 4/
Case E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Case X . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
-0.5 V dc to +20 V dc
-0.5 V dc to VDD + 0.5 Vdc
±10 mA
100 mW
-65(C to +150(C
+265(C
24°C/W
29°C/W
73°C/W
114°C/W
+175(C
0.68 W
0.44 W
1.4 Recommended operating conditions.
Supply voltage range (VDD) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Case operating temperature range (TC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage (VIN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output voltage (VOUT) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Radiation features:
Total dose . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single event phenomenon (SEP) effective
linear energy threshold, no upsets or latchup (see 4.4.4.5) . . . . . . . . . . . . . . . . . . . .
Dose rate upset (20 ns pulse) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Dose rate latch-up . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Dose rate survivability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Neutron irradiated (device type 02) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.0 V dc to +18 V dc
-55(C to +125(C
0 V to VDD
0 V to VDD
1 x 105 Rads (Si)
>75 MEV/(cm2/mg) 5/
> 5 x 108 Rads(Si)/s 5/
> 2 x 108 Rads(Si)/s 5/
> 5 x 1011 Rads(Si)/s 5/
> 1 x 1014 neutrons/cm2
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, bulletin, and handbook. Unless otherwise specified, the following specification, standards,
bulletin, and handbook of the issue listed in that issue of the Department of Defense Index of Specifications and Standards specified in the
solicitation, form a part of this drawing to the extent specified herein.
SPECIFICATION
MILITARY
MIL-I-38535 - Integrated Circuits, Manufacturing, General Specification for.
STANDARDS
MILITARY
MIL-STD-883 - Test Methods and Procedures for Microelectronics.
MIL-STD-973 - Configuration Management.
MIL-STD-1835 - Microcircuit Case Outlines.
1/
2/
3/
4/
5/
Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels
may degrade performance and affect reliability.
Unless otherwise specified, all voltages are referenced to VSS.
The limits for the parameters specified herein shall apply over the full specified VCC range and case temperature range of -55(C to
+125(C unless otherwise noted.
If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is
based on JA) at the following rate:
Case E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.7 mW/°C
Case X . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.8 mW/°C
Guaranteed by design or process but not tested.
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REVISION LEVEL
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BULLETIN
MILITARY
MIL-BUL-103 - List of Standardized Military Drawings (SMD's).
HANDBOOK
MILITARY
MIL-HDBK-780 - Standardized Military Drawings.
(Copies of the specification, standards, bulletin, and handbook required by manufacturers in connection with specific acquisition functions
should be obtained from the contracting activity or as directed by the contracting activity.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing
shall take precedence.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device class M shall be in accordance with 1.2.1 of MIL-STD-883, "Provisions for
the use of MIL-STD-883 in conjunction with compliant non-JAN devices" and as specified herein. The individual item requirements for device
classes Q and V shall be in accordance with MIL-I-38535 and as specified herein or as modified in the device manufacturer's Quality
Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-STD-883
(see 3.1 herein) for device class M and MIL-I-38535 for device classes Q and V herein.
3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.
3.2.3 Truth table. The truth table shall be as specified on figure 2.
3.2.4 Block diagrams. The block diagrams shall be as specified on figure 3.
3.2.5 Radiation test connections. The radiation test connections shall be as specified in table III herein.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance
characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each
subgroup are defined in table I.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. Marking for device class M shall be in accordance with MIL-STD-883
(see 3.1 herein). In addition, the manufacturer's PIN may also be marked as listed in MIL-BUL-103. Marking for device classes Q and V shall be
in accordance with MIL-I-38535.
3.5.1 Certification/compliance mark. The compliance mark for device class M shall be a "C" as required in MIL-STD-883 (see 3.1 herein).
The certification mark for device classes Q and V shall be a "QML" or "Q" as required in MIL-I-38535.
3.6 Certificate of compliance. For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an
approved source of supply in MIL-BUL-103 (see 6.7.2 herein). For device classes Q and V, a certificate of compliance shall be required from a
QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.7.1 herein). The certificate of compliance submitted
to DESC-EC prior to listing as an approved source of supply for this drawing shall affirm that the manufacturer's product meets, for device class
M, the requirements of MIL-STD-883 (see 3.1 herein), or for device classes Q and V, the requirements of MIL-I-38535 and the requirements
herein.
3.7 Certificate of conformance. A certificate of conformance as required for device class M in MIL-STD-883 (see 3.1 herein) or for device
classes Q and V in MIL-I-38535 shall be provided with each lot of microcircuits delivered to this drawing.
3.8 Notification of change for device class M. For device class M, notification to DESC-EC of change of product (see 6.2 herein) involving
devices acquired to this drawing is required for any change as defined in MIL-STD-973.
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REVISION LEVEL
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3.9 Verification and review for device class M. For device class M, DESC, DESC's agent, and the acquiring activity retain the
option to review the manufacturer's facility and applicable required documentation. Offshore documentation
shall be made available onshore at the option of the reviewer.
3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit
group number 40 (see MIL-I-38535, appendix A).
4. QUALITY ASSURANCE PROVISIONS
4.1 Sampling and inspection. For device class M, sampling and inspection procedures shall be in accordance with
MIL-STD-883 (see 3.1 herein). For device classes Q and V, sampling and inspection procedures shall be in accordance with
MIL-I-38535 or as modified in the device manufacturer's quality management (QM) plan. The modification in the QM plan shall not
affect form, fit, or function as described herein.
4.2 Screening. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be
conducted on all devices prior to quality conformance inspection. For device classes Q and V, screening shall be in accordance
with MIL-I-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection.
4.2.1 Additional criteria for device class M.
a.
b.
Burn-in test, method 1015 of MIL-STD-883.
(1)
Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level
control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method
1015.
(2)
TA = +125(C, minimum.
Interim and final electrical test parameters shall be as specified in table IIA herein.
2.2 Additional criteria for device classes Q and V.
a.
The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device
manufacturer's QM plan in accordance with MIL-I-38535. The burn-in test circuit shall be maintained under document
revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with MIL-I-38535 and
shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs,
biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015.
b.
Interim and final electrical test parameters shall be as specified in table IIA herein.
c.
Additional screening for device class V beyond the requirements of device class Q shall be as specified in appendix B of
MIL-I-38535 or as modified in the device manufacturer's quality management (QM) plan.
4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in
accordance with MIL-I-38535. Inspections to be performed shall be those specified in MIL-I-38535 and herein for groups A, B, C,
D, and E inspections (see 4.4.1 through 4.4.4).
4.3.1 Electrostatic discharge sensitivity (ESDS) qualification inspection. ESDS testing shall be performed in accordance with
MIL-STD-883, method 3015. ESDS testing shall be measured only for initial qualification and after process or design changes
which may affect ESDS classification.
4.4 Conformance inspection. Quality conformance inspection for device class M shall be in accordance with MIL-STD-883 (see
3.1 herein) and as specified herein. Inspections to be performed for device class M shall be those specified in method 5005 of
MIL-STD-883 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). Technology conformance inspection
for classes Q and V shall be in accordance with MIL-I-38535 or as specified in the QM plan including groups A, B, C, D, and E
inspections and as specified herein except where option 2 of MIL-I-38535 permits alternate in-line control testing.
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REVISION LEVEL
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5
TABLE I. Electrical performance characteristics.
Test
Symbol
Conditions
-55(C < TC < +125(C
unless otherwise specified
Device
type
Group A
subgroups
Limits
Min
Supply current
IDD
VDD = 5 V
VIN = 0.0 V or VDD
All
VDD = 10 V
VIN = 0.0 V or VDD
All
VDD = 15 V
VIN = 0.0 V or VDD
All
VDD = 20 V, VIN = 0.0 V or VDD
All
IOL
5.0
2 1/
150
1, 3 1/
10.0
2 1/
300
1, 3 1/
10.0
2 1/
600
1
10.0
2
1000
All
1
25
VDD = 18 V, VIN = 0.0 V or VDD
All
3
10.0
VDD = 5 V
VO = 0.4 V
VIN = 0.0 V or VDD
All
1
0.53
2 1/
0.36
3 1/
0.64
1
1.4
2 1/
0.9
3 1/
1.6
1
3.5
2 1/
2.4
3 1/
4.2
VDD = 10 V
VO = 0.5 V
VIN = 0.0 V or VDD
All
VDD = 15 V
VO = 1.5 V
VIN = 0.0 V or VDD
High level output
current (source)
IOH
Max
1, 3 1/
M, D, L, R 2/
Low level output
current (sink)
Units
All
VDD = 5 V
VO = 4.6 V
VIN = 0.0 V or VDD
All
VDD = 5 V
VO = 2.5 V
VIN = 0.0 V or VDD
All
VDD = 10 V
VO = 9.5 V
VIN = 0.0 V or VDD
All
VDD = 15 V
VO = 13.5 V
VIN = 0.0 V or VDD
All
µA
mA
1
-0.53
2 1/
-0.36
3 1/
-0.64
1
-1.8
2 1/
-1.15
3 1/
-2.0
1
-1.4
2 1/
-0.9
3 1/
-1.6
1
-3.5
2 1/
-2.4
3 1/
-4.2
mA
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REVISION LEVEL
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6
TABLE I. Electrical performance characteristics - Continued.
Test
Output voltage, high
Output voltage, low
Input voltage
Symbol
VOH
VOL
VIL
VIH
Input leakage current,
low
Input leakage current,
high
Tri-state output leakage
Tri-state output leakage
IIL
IIH
IOZL
IOZH
Conditions
-55(C < TC < +125(C
unless otherwise specified
Device
type
Group A
subgroups
All
1, 2, 3
4.95
VDD = 10 V, no load 1/
1, 2, 3
9.95
VDD = 15 V, no load 3/
1, 2, 3
15
VDD = 5 V, no load 1/
VDD = 5 V, no load 1/
All
Limits
Min
Unit
Max
V
1, 2, 3
0.05
VDD = 10 V, no load 1/
1, 2, 3
0.05
VDD = 15 V, no load
1, 2, 3
0.05
1, 2, 3
1.5
VDD = 10 V
VOH > 9.0 V, VOL < 1.0 V 1/
1, 2, 3
3
VDD = 15 V
VOH > 13.5 V, VOL < 1.5 V
1, 2, 3
4
VDD = 5 V
VOH > 4.5 V, VOL < 0.5 V
All
VDD = 5 V
VOH > 4.5 V, VOL < 0.5 V
All
1, 2, 3
3.5
VDD = 10 V
VOH > 9.0 V, VOL < 1.0 V 1/
1, 2, 3
7
VDD = 15 V
VOH > 13.5 V, VOL < 1.5 V
1, 2, 3
11
1
-100
VIN = VDD or GND, VDD = 20 V
2
-1000
VIN = VDD or GND, VDD = 18 V
3
-100
VIN = VDD or GND, VDD = 20 V
VIN = VDD or GND, VDD = 20 V
All
100
VIN = VDD or GND, VDD = 20 V
2
1000
VIN = VDD or GND, VDD = 18 V
3
100
VDD = 20 V
VIN = VDD or
GND
VOUT = VDD
1/ 4/
VDD = 20 V
All
VDD = 18 V
VDD = 18 V
All
1
-0.4
2
-12
3
-0.4
V
nA
1
VIN = VDD or
GND
VOUT = 0 V
1/ 4/
All
mV
)A
1
0.4
2
12
3
0.4
)A
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REVISION LEVEL
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7
TABLE I. Electrical performance characteristics - Continued.
Test
N threshold voltage
Symbol
VNTH
Conditions
-55(C < TC < +125(C
unless otherwise specified
VDD = 10 V, ISS = -10 µA
P threshold voltage
VNTH
VPTH
VPTH
Functional tests
Unit
Min
Max
1
-0.7
-2.8
All
1
-0.2
-2.8
VDD = 10 V, ISS = -10 µA,
M, D, L, R 2/
All
1
VSS = 0.0 V, IDD = 10 µA
All
1
0.7
2.8
All
1
0.2
2.8
VSS = 0.0 V, IDD = 10 µA
M, D, L, R 2/
All
1
VDD = 2.8 V, VIN = VDD or GND
All
7
M, D, L, R 2/
P threshold voltage,
delta
Limits
All
M, D, L, R 2/
N threshold voltage,
delta
Device Group A
type
subgroups
VDD = 20 V, VIN = VDD or GND
VDD = 18 V, VIN = VDD or GND
7
All
8A
All
7
All
8B
M, D, L, R 2/
All
7
M, D, L, R 2/
VDD = 3.0 V, VIN = VDD or GND
V
±1.0
±1.0
VOH > VOL <
VDD/2 VDD/2
V
Input capacitance
CIN 1/
Any input, See 4.4.1c
All
4
7.5
pF
Transition time 4/
TTLH,
TTHL
VDD = 5.0 V, VIN = VDD or GND
All
9
200
ns
10, 11
270
tPHL1,
tPLH1
VDD = 5.0 V, VIN = VDD or GND
9
600
10, 11
810
All
9
810
All
9
460
10, 11
621
All
9
621
All
9
840
10, 11
1134
9
1134
Propagation delay time,
Clock to serial output
QS 4/
M, D, L, R 2/
Propagation delay time,
Clock to serial output
Q'S 4/
tPHL2,
tPLH2
VDD = 5.0 V, VIN = VDD or GND
M, D, L, R 2/
Propagation delay time,
Clock to parallel
output 4/
tPHL3,
tPLH3
VDD = 5.0 V, VIN = VDD or GND
M, D, L, R 2/
All
All
ns
ns
ns
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TABLE I. Electrical performance characteristics - Continued.
Test
Propagation delay time,
strobe to parallel
output 4/
Symbol
tPHL4,
tPLH4
Conditions
-55(C < TC < +125(C
unless otherwise specified
Device
type
Group A
subgroups
VDD = 5.0 V, VIN = VDD or GND
All
9
580
10, 11
783
All
9
783
All
9
280
10, 11
378
All
9
378
All
9
200
10, 11
270
All
9
270
All
9
1.25
10, 11
.93
M, D, L, R 2/
Propagation delay time,
output enable to
parallel output 5/
tPHZ,
tPZH
VDD = 5.0 V, VIN = VDD or GND
M, D, L, R 2/
Propagation delay time,
output enable to
parallel output 5/
tPLZ,
tPZL
VDD = 5.0 V, VIN = VDD or GND
M, D, L, R 2/
Maximum clock input
frequency 4/
fMAX
Minimum data setup
time 4/
ts 1/
Minimum clock pulse width
1/ 4/
tw1
Minimum strobe pulse width
1/ 4/
tw2
Clock input rise or
fall time 4/
tRCL,
tFCL 1/
VDD = 5.0 V, VIN = VDD or GND
VDD = 5.0 V, VIN = VDD or GND
VDD = 5.0 V, VIN = VDD or GND
All
All
VDD = 5.0 V, VIN = VDD or GND
VDD = 5.0 V, VIN = VDD or GND
All
Limits
Min
Unit
Max
ns
ns
ns
MHz
9
125
10, 11
188
9
200
10, 11
300
9
200
10, 11
300
9
15
10, 11
22.5
ns
ns
ns
)s
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REVISION LEVEL
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9
TABLE I. Electrical performance characteristics - Continued.
Test
Transition time 1/ 4/
Symbol
TTLH,
TTHL
Propagation delay time,
clock to serial output
QS 1/ 4/
tPHL1,
tPLH1
Propagation delay time,
clock to serial output
Q'S 1/ 4/
tPHL2,
tPLH2
Propagation delay time,
clock to parallel output
1/ 4/
tPHL3,
tPLH3
Propagation delay time,
strobe to parallel
output 1/ 4/
tPHL4,
tPLH4
Propagation delay time,
output enable to
parallel output 1/ 5/
tPHZ,
tPZH
Propagation delay time,
output enable to
parallel output 1/ 5/
tPLZ,
tPZL
Maximum clock input
frequency 1/ 4/
fMAX
Minimum data setup
time 1/ 4/
ts
Minimum clock pulse
width 1/ 4/
tw1
Minimum strobe pulse
width 1/ 4/
tw2
Clock input rise or
fall time 1/ 4/ 6/
tRCL,
tFCL
Conditions
-55(C < TC < +125(C
unless otherwise specified
VDD = 10 V
Device
type
Group A
subgroups
All
9
100
9
80
9
250
9
190
9
220
9
150
9
390
9
270
9
290
9
200
9
120
9
90
9
100
9
80
VDD = 15 V
VDD = 10 V
All
VDD = 15 V
VDD = 10 V
All
VDD = 15 V
VDD = 10 V
All
VDD = 15 V
VDD = 10 V
All
VDD = 15 V
VDD = 10 V
All
VDD = 15 V
VDD = 10 V
All
VDD = 15 V
VDD = 10 V
All
VDD = 15 V
VDD = 10 V
All
VDD = 15 V
VDD = 10 V
All
VDD = 15 V
VDD = 10 V
All
VDD = 15 V
VDD = 10 V
All
VDD = 15 V
Limits
Min
9
2.5
9
3.0
Unit
Max
ns
ns
ns
ns
ns
ns
ns
MHz
9
55
9
35
9
100
9
83
9
80
9
70
9
5
9
5
ns
ns
ns
)s
See footnotes on next page.
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REVISION LEVEL
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1/
These tests are controlled via design or process and are not directly tested. These parameters are characterized
on initial design release and upon design changes which affect these characteristics.
2/ Devices supplied to this drawing will meet all levels M, D, L, R of irradiation. However, this device is only tested at the 'R' level.
When performing post irradiation electrical measurements for any RHA level, TA = +25(C.
3/ For accuracy, voltage is measured differentially to VDD. Limit is 0.050 V Max.
4/ CL = 50 pF, RL = 200 K6, Input tr, tf < 20 ns.
5/ CL = 50 pF, RL = 1 K6, Input tr, tf < 20 ns.
6/ If more than one unit is cascaded, tRCL shoul be made less than or equal to the sum of the transition time and the fixed
propagation delay of the output of the driving stage for the estimated capacitance load.
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Device type
01 and 02
Case outlines
E and X
Terminal number
Terminal symbol
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
STROBE
DATA
CLOCK
Q1
Q2
Q3
Q4
VSS
QS
Q'S
Q8
Q7
Q6
Q5
OUTPUT ENABLE
VDD
FIGURE 1. Terminal connections.
Output
enable
C°
Parallel outputs
Strobe
Serial outputs
Data
Q1
QN
QS*
Q'S
b
0
X
X
OC
OC
Q7
NC
c
0
X
X
OC
OC
NC
Q7
b
1
0
X
NC
NC
Q7
NC
b
1
1
0
0
QN-1
Q7
NC
b
1
1
1
1
QN-1
Q7
NC
c
1
1
1
NC
NC
NC
Q7
Logic 1 = High logic level, Logic 0 = Low logic level, X = Irrelevant
° = Level change
NC = No change
OC = Open circuit
b = Low to high clock transition
c = High to low clock transition
* = At the positive edge information in the 7th shift register stage is transferred to the 8th register stage and the QS output
FIGURE 2. Truth table
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STANDARD
MICROCIRCUIT DRAWING
DEFENSE ELECTRONICS SUPPLY CENTER
DAYTON, OHIO 45444
DESC FORM 193A
JUL 94
5962-96642
A
REVISION LEVEL
SHEET
12
FIGURE 3. Block diagrams.
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DAYTON, OHIO 45444
DESC FORM 193A
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5962-96642
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REVISION LEVEL
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4.4.1 Group A inspection.
a.
Tests shall be as specified in table IIA herein.
b.
For device class M, subgroups 7 and 8 tests shall be sufficient to verify the truth table in figure 2 herein. For device classes
Q and V, subgroups 7 and 8 shall include verifying the functionality of the device.
c.
Subgroup 4 (CIN measurement) shall be measured only for the initial qualification and after process or design changes
which may affect capacitance. CIN shall be measured between the designated terminal and GND at a frequency of 1
MHz. Tests shall be sufficient to validate the limits defined in table I herein.
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883:
a.
Test condition A, B, C or D. The test circuit shall be maintained by the manufacturer under document revision level control
and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs,
outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005.
b.
TA = +125(C, minimum.
c.
Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.
4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature, or
approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-I-38535. The test circuit
shall be maintained under document revision level control by the device manufacturer's TRB, in accordance with MIL-I-38535, and
shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases,
and power dissipation, as applicable, in accordance with the intent specified in test method 1005.
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured
(see 3.5 herein). RHA levels for device classes M, Q and V shall be as specified in MIL-I-38535. End-point electrical parameters
shall be as specified in table IIA herein.
4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883 method
1019 and as specified herein.
4.4.4.1.1 Accelerated aging test. Accelerated aging tests shall be performed on all devices requiring a RHA level greater than 5k
rads(Si). The post-anneal end-point electrical parameter limits shall be as specified in table I herein and shall be the pre-irradiation
end-point electrical parameter limit at +25(C ±5(C. Testing shall be performed at initial qualification and after any design or process
changes which may affect the RHA response of the device.
4.4.4.2 Neutron irradiation. Neutron irradiation for device 02 shall be conducted in wafer form using a neutron fluence of
approximately 1 x 1014 neutrons/cm2.
4.4.4.3 Dose rate induced latchup testing. Dose rate induced latchup testing shall be performed in accordance with test method
1020 of MIL-STD-883 and as specified herein (see 1.4 herein). Tests shall be performed on devices, SEC, or approved test
structures at technology qualification and after any design or process changes which may effect the RHA capability of the process.
4.4.4.4 Dose rate upset testing. Dose rate upset testing shall be performed in accordance with test method 1021 of
MIL-STD-883 and herein (see 1.4 herein).
a.
Transient dose rate upset testing shall be performed at initial qualification and after any design or process changes which
may effect the RHA performance of the devices. Test 10 devices with 0 defects unless otherwise specified.
b.
Transient dose rate upset testing for class Q and V devices shall be performed as specified by a TRB approved radiation
hardness assurance plan and MIL-I-38535.
SIZE
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DEFENSE ELECTRONICS SUPPLY CENTER
DAYTON, OHIO 45444
DESC FORM 193A
JUL 94
5962-96642
A
REVISION LEVEL
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TABLE IIA. Electrical test requirements.
Test requirements
Subgroups
(in accordance with MIL-I-38535,
table III)
Subgroups
(in accordance with
MIL-STD-883, TM 5005,
table I)
Device class M
Device class Q
Device class V
1,7,9
1,7,9
1,7,9
Final electrical parameters
(see 4.2)
1,2,3,7,8,9,10,11
1/
1,2,3,7,8,9,10,11
1/
1,2,3,7,8,9,10,11
2/ 3/
Group A test requirements
(see 4.4)
1,2,3,4,7,8,9,10,11
1,2,3,4,7,8,9,10,11
1,2,3,4,7,8,9,10,11
Group C end-point electrical
parameters (see 4.4)
1,2,3,7,8,9,10,11
1,2,3,7,8,9,10,11
1,2,3,7,8,9,10,11
3/
Group D end-point electrical
parameters (see 4.4)
1,7,9
1,7,9
1,7,9
Group E end-point electrical
parameters (see 4.4)
1,7,9
1,7,9
1,7,9
Interim electrical parameters
(see 4.2)
1/ PDA applies to subgroup 1 and 7.
2/ PDA applies to subgroups 1, 7 and 9 and deltas.
3/ Delta limits as specified in table IIB shall be required where specified, and the delta limits shall be
completed with reference to the zero hour electrical parameters (see Table I)
Table IIB. Burn-in and operating life test Delta parameters (+25°C)
Parameter
Symbol
Delta Limits
Supply current
IDD
±1.0 µA
Output current (sink)
VDD = 5.0 V
IOL
±20%
Output current (source)
VDD = 5.0 V, VOUT = 4.6 V
IOH
±20%
4.4.4.5 Single event phenomena (SEP). SEP testing shall be required on class V devices (see 1.4 herein). SEP testing shall be
performed on a technology process on the Standard Evaluation Circuit (SEC) or alternate SEP test vehicle as approved by the qualifying
activity at initial qualification and after any design or process changes which may affect the upset or latchup characteristics. The
recommended test conditions for SEP are as follows:
a.
The ion beam angle of incidence shall be between normal to the die surface and 60( to the normal, inclusive (i.e. 0( angle 60().
No shadowing of the ion beam due to fixturing or package related effects is allowed.
b.
The fluence shall be 100 errors or 106 ions/cm2.
c.
The flux shall be between 102 and 105 ions/cm2/s. The cross-section shall be verified to be flux independent by measuring the
cross-section at two flux rates which differ by at least an order of magnitude.
d.
The particle range shall be 20 microns in silicon.
e.
The test temperature shall be +25(C and the maximum rated operating temperature ±10(C.
f.
Bias conditions shall be defined by the manufacturer for latchup measurements.
g.
Test four devices with zero failures.
SIZE
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MICROCIRCUIT DRAWING
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DESC FORM 193A
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REVISION LEVEL
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Table III. Irradiation test connections device types 01 and 02. 1/
Open
Ground
VDD = 10 V ±0.5 V
4,5,6,7,9,10,11,
12,13,14
8
1,2,3,15,16
1/ Each pin except VDD and GND will have a series resistor of 47K6 ±5%, for irradiation testing.
4.5 Methods of inspection. Methods of inspection shall be as specified as follows:
4.5.1 Voltage and current. Unless otherwise specified, all voltages given are referenced to the microcircuit GND terminal.
Currents given are conventional current and positive when flowing into the referenced terminal.
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-STD-883 (see 3.1 herein) for
device class M and MIL-I-38535 for device classes Q and V.
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original
equipment), design applications, and logistics purposes.
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a
contractor-prepared specification or drawing.
6.1.2 Substitutability. Device class Q devices will replace device class M devices.
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for the
individual documents. This coordination will be accomplished in accordance with MIL-STD-973 using DD Form 1692, Engineering
Change Proposal.
6.3 Record of users. Military and industrial users shall inform Defense Electronics Supply Center when a system application
requires configuration control and which SMD's are applicable to that system. DESC will maintain a record of users and this list will
be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic devices (FSC
5962) should contact DESC-EC, telephone (513) 296-6047.
6.4 Comments. Comments on this drawing should be directed to DESC-EC, Dayton, Ohio 45444-5270, or telephone
(513) 296-8525.
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-I-38535
and MIL-STD-1331.
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DAYTON, OHIO 45444
DESC FORM 193A
JUL 94
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REVISION LEVEL
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6.6 One part - one part number system. The one part - one part number system described below has been developed to allow
for transitions between identical generic devices covered by the three major microcircuit requirements documents (MIL-H-38534,
MIL-I-38535, and 1.2.1 of MIL-STD-883) without the necessity for the generation of unique PIN's. The three military requirements
documents represent different class levels, and previously when a device manufacturer upgraded military product from one class
level to another, the benefits of the upgraded product were unavailable to the Original Equipment Manufacturer (OEM), that was
contractually locked into the original unique PIN. By establishing a one part number system covering all three documents, the OEM
can acquire to the highest class level available for a given generic device to meet system needs without modifying the original
contract parts selection criteria.
Military documentation format
Example PIN
under new system
Manufacturing
source listing
Document
listing
New MIL-H-38534 Standard Microcircuit
Drawings
5962-XXXXXZZ(H or K)YY
QML-38534
MIL-BUL-103
New MIL-I-38535 Standard Microcircuit
Drawings
5962-XXXXXZZ(Q or V)YY
QML-38535
MIL-BUL-103
New 1.2.1 of MIL-STD-883 Standard
Microcircuit Drawings
5962-XXXXXZZ(M)YY
MIL-BUL-103
MIL-BUL-103
6.7 Sources of supply.
6.7.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.
The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein) to DESC-EC and have agreed to this
drawing.
6.7.2 Approved sources of supply for device class M. Approved sources of supply for class M are listed in MIL-BUL-103. The
vendors listed in MIL-BUL-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been submitted to
and accepted by DESC-EC.
6.8 Additional information. A copy of the following additional data shall be maintained and available from the device
manufacturer:
a. RHA upset levels.
b. Test conditions (SEP).
c. Number of upsets (SEP).
d. Number of transients (SEP).
e. Occurrence of latchup (SEP).
SIZE
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MICROCIRCUIT DRAWING
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DAYTON, OHIO 45444
DESC FORM 193A
JUL 94
5962-96642
A
REVISION LEVEL
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17
STANDARD MICROCIRCUIT DRAWING SOURCE APPROVAL BULLETIN
DATE: 96-01-12
Approved sources of supply for SMD 5962-96642 are listed below for immediate acquisition only and shall be added to
MIL-BUL-103 and QML-38535 during the next revision. MIL-BUL-103 and QML-38535 will be revised to include the addition or
deletion of sources. The vendors listed below have agreed to this drawing and a certificate of compliance has been submitted to
and accepted by DESC-EC. This bulletin is superseded by the next dated revision of MIL-BUL-103 and QML-38535.
Standard
microcircuit drawing
PIN
5962R9664201VEC
5962R9664201VXC
5962R9664202VEC
5962R9664202VXC
Vendor CAGE number 34371
34371
34371
34371
Vendor
similar
PIN 1/
CD4094BDMSR
CD4094BKMSR
CD4094BDNSR
CD4094BKNSR
1/ Caution. Do not use this number for item
acquisition. Items acquired to this number
may not satisfy the performance requirements
of this drawing.
Vendor CAGE
number
34371
Vendor name
and address
Harris Semiconductor
P.O. Box 883
Melbourne, FL 32902-0883
The information contained herein is disseminated for convenience only and the Government assumes no liability whatsoever for any inaccuracies in this information bulletin.