PHOTOMULTIPLIER TUBE R5984 New Electro-Optical Design Wide Effective Area, High Sensitivity Multialkali Photocathode 185 nm to 900 nm, 28 mm (1-1/8 Inch) Diameter, 9-stage, Side-on Type FEATURES ●New Electro-Optical Design Structure ●Wide Effective Area ................................... 10 mm × 24 mm ●High Cathode Sensitivity (Luminous) ..... 300 µA/lm ●High Anode Sensitivity (Luminous) ......... 3000 A/lm ●Basing Diagram is same as the R928 APPLICATIONS ●Spectroscopy ●Biomedical ●Environmental Monitoring Figure 1: Typical Anode Uniformity 10 MIN. SPECIFICATIONS 2.5 ± 0.5 2.5 ± 0.5 GENERAL SUPPLY VOLTAGE : 1000 V SPOT SIZE : 0.5 mm WAVELENGTH : 420 mm CENTER OF PHOTOCATHODE 100 RELATIVE SENSITIVITY (%) Description/Value Parameter Unit 185 to 900 Spectral Response nm Wavelength of Maximum Response 400 nm MateriaI Multialkali — Photocathode Minimum Effective Area 10 × 24 mm Window Material UV glass — Structure Circular Cage — Dynode Number of Stages 9 — Direct Anode to Last Dynode 4 pF Interelectrode Anode to All Other 6 pF Capacitances Electrodes Base 11-pin base — Weight Approx. 45 g Operating Ambient Temperature -30 to +50 °C Storage Temperature -30 to +50 °C SuitabIe Socket E678-11A (Sold Separately) — E717-63 (Sold Separately) SuitabIe Socket Assembly — E717-74 (Sold Separately) 80 * The center of the R5984 photocathode is slightly laid out to the left side from guide key, light path should be adjusted by 2.5 mm to the left side from the guide key. 60 8 mm 40 20 0 8 7 6 5 4 3 2 1 0 1 2 3 4 DISTANCE FROM GUIDE KEY (mm) TPMSB0122EB Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K. PHOTOMULTIPLIER TUBE R5984 MAXIMUM RATINGS (Absolute Maximum Values) Parameter Value 1250 250 0.1 Between Anode and Cathode Between Anode and Last Dynode Supply Voltage Average Anode Current A Unit V V mA CHARACTERISTlCS (at 25 °C) Anode Sensitivity Gain E Anode Dark Current F (After 30 min Storage in Darkness) ENI (Equivalent Noise Input) G Anode Pulse Rise Time H Time response Electron Transit Time J Light Hysteresis Anode Current Stability K Voltage Hysteresis NOTES A: Averaged over any interval of 30 seconds maximum. B: The light source is a tungsten filament lamp operated at a distribution temperature of 2856 K. Supply voltage is 100 V between the cathode and all other electrodes connected together as anode. C: The value is cathode output current when a blue filter(Corning CS 5-58 polished to 1/2 stock thickness) is interposed between the light source and the tube under the same condition as Note B. D: Red/White ratio is the quotient of the cathode current measured using a red filter (Toshiba R-68) interposed between the light source and the tube by the cathode current measured with the filter removed under the same condition as Note B. E: Measured with the same light source as Note B and with the anode-tocathode supply voltage and voltage distribution ratio shown in Table 1 below. F: Measured with the same supply voltage and voltage distribution ratio as Note E after removal of light. G: ENI is an indication of the photon-limited signal-to-noise ratio. It refers to the amount of light in watts to produce a signal-to-noise ratio of unity in the output of a photomultiplier tube. ENI = where 2q.ldb.G. ∆f S q = Electronic charge (1.60 × 10-19 coulomb). ldb = Anode dark current (after 30 minute storage) in amperes. G = Gain. ∆f = Bandwidth of the system in hertz. 1 hertz is used. S = Anode radiant sensitivity in amperes per watt at the wavelength of peak response. H: The rise time is the time for the output pulse to rise from 10 % to 90 % of the peak amplitude when the whole photocathode is illuminated by a delta function light pulse. Min. Typ. Max — 140 — — — 400 — — — — — — — — 26 300 76 9 0.32 3000 7.6 × 105 1 × 107 5 1.7 × 10-16 2.2 22 0.1 1 — — — — — — — — 50 — — — — — Unit % µA/lm mA/W — — A/lm A/W — nA W ns ns % % J: The electron transit time is the interval between the arrival of delta function light pulse at the entrance window of the tube and the time when the anode output reaches the peak amplitude. In measurement, the whole photocathode is illuminated. K: Hysteresis is temporary instability in anode current after light and voltage are applied. Hysteresis = lmax. – lmin. × 100 (%) li ANODE CURRENT Cathode Sensitivity Parameter Quantum Efficiency at 260 nm (Peak) Luminous B Radiant at 400 nm (Peak) Blue Sensitivity Index (CS 5-58) C Red/White Ratio D Luminous E Radiant at 400 nm l max. li l min. TIME 5 0 6 7 (minutes) TPMSB0002EA (1)Light Hysteresis The tube is operated at 750 V with an anode current of 1 µA for 5 minutes. The light is then removed from the tube for a minute. The tube is then re-illuminated by the previous light level for a minute to measure the variation. (2)Voltage Hysteresis The tube is operated at 300 V with an anode current of 0.1 µA for 5 minutes. The light is then removed from the tube and the supply voltage is quickly increased to 800 V. After a minute, the supply voltage is then reduced to the previous value and the tube is re-illuminated for a minute to measure the variation. Table 1: Voltage Distribution Ratio Electrode Distribution Ratio K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 1 1 1 1 1 SuppIy Voltage: 1000 V, K: Cathode, 1 1 1 Dy: Dynode, 1 P 1 P: Anode Figure 2: Typical Spectral Response Figure 3: Anode Luminous Sensitivity and Gain Characteristics TPMSB0163EA 105 108 QUANTUM EFFICIENCY CATHODE RADIANT SENSITIVITY 1 0.1 WAVELENGTH (nm) TPMSB0121EB 100 10 1 0.1 -20 -10 0 +10 +20 +30 TEMPERATURE (°C) 107 103 106 TYPICAL ANODE SENSITIVITY 102 MINIMUM ANODE SENSITIVITY 101 100 10-1 500 +40 +50 105 104 103 700 1000 SUPPLY VOLTAGE (V) Figure 4: Typical Temperature Characteristics of Dark Current (at 1000 V, after 30 min storage in darkness) 0.01 -30 104 102 1500 GAIN 10 0.01 100 200 300 400 500 600 700 800 900 1000 ANODE DARK CURRENT (nA) TPMSB0003ED TYPICAL GAIN ANODE LUMINOUS SENSITIVITY (A/lm) CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) 100 PHOTOMULTIPLIER TUBE R5984 Figure 5: Dimensional Outline and Basing Diagram (Unit: mm) 28.5 ± 1.5 Figure 6: Socket (Unit: mm) Sold Separately E678-11A 10 MIN. 49 2.5 ± 0.5 38 7 DY7 8 DY8 DY3 3 DY2 3.5 DY6 6 5 9 DY9 2 29 10 P 1 11 K DY1 4 80 MAX. 5 DY4 4 94 MAX. 49.0 ± 2.5 24 MIN. DY5 33 PHOTOCATHODE 18 DIRECTION OF LIGHT Bottom View (Basing Diagram) 32.2 ± 0.5 11 PIN BASE JEDEC No. B11-88 TACCA0064EA TPMSA0035EB Figure 7: D Type Socket Assembly (Unit: mm) Sold Separately E717-63 E717-74 HOUSING (INSULATOR) 10 P R10 9 DY8 8 R9 38.0 ± 0.3 49.0 ± 0.3 R8 DY7 7 DY6 6 26.0±0.2 DY5 5 DY4 4 C1 TOP VIEW DY3 3 2 R4 HOUSING (INSULATOR) POTTING COMPOUND 2 DY1 K 1 22.4±0.2 K ° 10 R2 30° 8 -HV AWG22 (VIOLET) DY7 7 DY6 6 DY5 5 DY4 4 DY3 3 DY2 2 DY1 K 1 C3 R9 C2 R8 C1 R6 R5 R1 to R10 : 330 kΩ C1 to C3 : 10 nF R3 0.7 R1 11 DY8 R10 R4 SIDE VIEW R3 DY2 9 R7 7 A G 2.7 31.0 ± 0.5 DY9 32.0±0.5 R1 to R10 : 330 kΩ C1 to C3 : 10 nF SIGNAL OUTPUT (A) GND (G) 10 C2 R5 0.7 30.0 +0 -1 4 R6 SOCKET PIN No. P R7 29.0 ± 0.3 450 ± 10 C3 PMT 14.0±0.5 DY9 SIGNAL GND SIGNAL OUTPUT RG-174/U(BLACK) POWER SUPPLY GND AWG22 (BLACK) 26.0±0.2 SOCKET PIN No. 32.0±0.5 PMT 3.5 33.0 ± 0.3 5 R2 R1 11 -HV (K) 4- 2.8 R13 * "Wiring diagram applies when -HV is supplied." To supply +HV,connect the pin "G" to+HV, and the pin "K" to the GND. BOTTOM VIEW TACCA0002EH * Hamamatsu also provides C4900 series compact high voltage power supplies and C6270 series DP type socket assemblies which incorporate a DC to DC converter type high voltage power supply. TACCA0277EA Warning–Personal Safety Hazards Electrical Shock–Operating voltages applied to this device present a shock hazard. WEB SITE www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Electron Tube Division 314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected] Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: [email protected] France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: [email protected] United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: [email protected] North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: [email protected] TPMS1033E03 Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: [email protected] JUL. 2006 IP