PHOTOMULTIPLIER TUBES R5983, R5983P New Electro-Optical Design Wide Effective Area, Low Noise Bialkali Photocathode 185 nm to 710 nm, 28 mm (1-1/8 Inch) Diameter, 9-stage, Side-on Type FEATURES ●New Electro-Optical Design Structure ●Low Noise ●Wide Effective Area ................................... 10 mm × 24 mm ●High Cathode Sensitivity (Luminous) ..... 100 µA/lm ●High Anode Sensitivity (Luminous) ......... 1000 A/lm ●R4220 Wide Effective Area Type APPLICATIONS ●Spectroscopy ●Biomedical ●Environmental Monitoring SPECIFICATIONS Figure 1: Typical Anode Uniformity GENERAL Spectral Response Wavelength of Maximum Response Photocathode MateriaI Minimum Effective Area Window Material Dynode Structure Number of Stages Direct Interelectrode Capacitances Anode to Last Dynode Anode to All Other Electrodes Base SuitabIe Socket SuitabIe D Type Socket Assembly Weight Operating Ambient Temperature Storage Temperature Description/Value Unit 185 to 710 410 Low Noise Bialkali 10 × 24 UV glass Circular Cage 9 nm nm — mm — — — Approx. 4 Approx. 6 11-pin base E678-11A (Sold Separately) E717-63 (Sold Separately) Approx. 45 -30 to +50 -30 to +50 pF pF — — — g °C °C MAXIMUM RATINGS (Absolute Maximum Values) Parameter Value Supply Voltage Between Anode and Cathode 1250 Between Anode and Last Dynode 250 Average Anode Current A 0.1 NOTE A: Averaged over any interval of 30 seconds maximum. Unit V V mA 10 MIN. 2.5 ± 0.5 2.5 ± 0.5 SUPPLY VOLTAGE : 1000 V SPOT SIZE : 0.5 mm WAVELENGTH : 420 mm CENTER OF PHOTOCATHODE 100 RELATIVE SENSITIVITY (%) Parameter 80 * The center of the R5983 photocathode is slightly laid out to the left side from guide key, light path should be adjusted by 2.5 mm to the left side from the guide key. 60 8 mm 40 20 0 8 7 6 5 4 3 2 1 0 1 2 3 4 DISTANCE FROM GUIDE KEY (mm) TPMSB0122EB Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2002 Hamamatsu Photonics K.K. PHOTOMULTIPLIER TUBE R5983, R5983P CHARACTERISTlCS (at 25 °C) R5983 for General Purpose R5983P for Photon Counting Parameter Min. Min. Cathode Sensitivity Quantum Efficiency at 320 nm (Peak) Luminous A Radiant at 410 nm (Peak) Blue Sensitivity Index (CS 5-58) B 60 Anode Sensitivity Luminous C Radiant at 410 nm 500 Typ. Max. 23 100 70 8.0 Typ. 500 1 × 107 Gain C Unit 23 100 70 8.0 % µA/lm mA/W 1000 7.0 × 105 A/lm A/W 60 1000 7.0 × 105 Max. 1 × 107 D Anode Dark Current After 30 minute Storage in the Darkness Anode Dark Counts E ENI (Equivalent Noise Input) F 0.2 10 50 3.6 × 10-17 3.6 × 10-17 W 2.2 22 2.2 22 ns ns 0.1 1.0 0.1 1.0 % % Time Response Anode Pulse Rise Time G Electron Transit Time H J NOTES A: The light source is a tungsten filament lamp operated at a distribution temperature of 2856 K. Supply voltage is 100 volts between the cathode and all other electrodes connected together as anode. B: The value is cathode output current when a blue filter(Corning CS 5-58 polished to 1/2 stock thickness) is interposed between the light source and the tube under the same condition as Note A. C: Measured with the same light source as Note A and with the anode-tocathode supply voltage and voltage distribution ratio shown in Table 1 below. D: Measured with the same supply voltage and voltage distribution ratio as Note C after removal of light. E: Measured at the voltage producing the gain of 1 × 106. F: ENI is an indication of the photon-limited signal-to-noise ratio. It refers to the amount of light in watts to produce a signal-to-noise ratio of unity in the output of a photomultiplier tube. 2q.ldb.G. ∆f S where q = Electronic charge (1.60 × 10-19 coulomb). ldb = Anode dark current (after 30 minute storage) in amperes. G = Gain. ∆f = Bandwidth of the system in hertz. 1 hertz is used. S = Anode radiant sensitivity in amperes per watt at the wavelength of peak response. ENI = G:The rise time is the time for the output pulse to rise from 10 % to 90 % of the peak amplitude when the whole photocathode is illuminated by a delta function light pulse. H: The electron transit time is the interval between the arrival of delta function light pulse at the entrance window of the tube and the time when the anode output reaches the peak amplitude. In measurement, the whole photocathode is illuminated. J: Hysteresis is temporary instability in anode current after light and voltage are applied. Hysteresis = lmax. – lmin. × 100 (%) li ANODE CURRENT Anode Current Stability Current Hysteresis Voltage Hysteresis nA s-1 2.0 l max. li l min. TIME 5 0 6 7 (minutes) TPMSB0002EA (1)Current Hysteresis The tube is operated at 750 volts with an anode current of 1 micro-ampere for 5 minutes. The light is then removed from the tube for a minute. The tube is then re-illuminated by the previous light level for a minute to measure the variation. (2)Voltage Hysteresis The tube is operated at 300 volts with an anode current of 0.1 micro-ampere for 5 minutes. The light is then removed from the tube and the supply voltage is quickly increased to 800 volts. After a minute, the supply voltage is then reduced to the previous value and the tube is re-illuminated for a minute to measure the variation. Table 1: Voltage Distribution Ratio Electrode Distribution Ratio K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 1 1 1 SuppIy Voltage : 1000 V dc K : Cathode, Dy : Dynode, 1 1 P : Anode 1 1 1 1 P 1 Figure 3: Typical Gain and Anode Dark Current TPMSB0010EA 10-5 ANODE DARK CURRENT (A) CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) 100 10 CATHODE RADIANT SENSITIVITY 1 QUANTUM EFFICIENCY 0.1 0.01 100 TPMSB0170EA 10-6 107 10-7 300 400 500 600 700 10-8 105 10-9 10-10 E OD AN 10-11 400 COUNTS PER CHANNEL FULL SCALE 104 (PHOTON + DARK) FULL SCALE 104 (DARK) EQUIVALENT NOISE INPUT (W) 10-14 10-15 10-16 300 400 500 600 700 800 Figure 6: Typical Temperature Characteristics of Dark Count for R5983P TPMSB0030EB 103 DARK COUNT (s-1) 101 1500 1000 102 101 100 0 +20 TEMPERATURE (°C) WAVELENGTH OF INCIDENT LIGHT: 450 (nm) SUPPLY VOLTAGE: 852 (V) LOWER LEVEL DISCRI.: 65 (ch) PHOTON + DARK COUNT: 6046 (s-1) DARK COUNT: 10 (s-1) TEMPERATURE: 25 (°C) 0.8 0.6 0.4 SIGNAL + DARK 0.2 DARK 0 200 400 600 800 CHANNEL NUMBER (CH) WAVELENGTH (nm) 10-1 -20 800 TPMSB0171EA 1 10-13 104 102 Figure 5: Typical Single Photon Pulse Height Distribution for R5983P TPMSB0027EA 200 600 103 SUPPLY VOLTAGE (V) Figure 4: Typical ENI vs. Wavelength 10-17 100 500 RK DA 104 NT RE R CU 800 WAVELENGTH (nm) 10-12 106 IN GA 10-12 300 200 108 GAIN Figure 2: Typical Spectral Response +40 +50 1000 PHOTOMULTIPLIER TUBE R5983, R5983P Figure 7: Dimensional Outline and Basing Diagram (Unit: mm) Figure 8: Socket E678-11A (Sold Separately) 28.5 ± 1.5 49 38 10 MIN. 2.5 ± 0.5 3.5 33 PHOTOCATHODE DY6 6 5 DY7 7 8 DY8 DY3 3 DY2 29 2 4 9 DY9 10 P 1 18 80 MAX. 5 DY4 4 94 MAX. 49.0 ± 2.5 24 MIN. DY5 11 K DY1 DIRECTION OF LIGHT TACCA0064EA 32.2 ± 0.5 11 PIN BASE JEDEC No. B11-88 TPMSA0035EB Figure 9: D Type Socket Assembly E717-63 (Sold Separately) PMT 3.5 33.0 ± 0.3 5 SOCKET PIN No. 10 P 38.0 ± 0.3 49.0 ± 0.3 DY9 9 DY8 8 DY7 7 R10 C3 R9 C2 R8 C1 SIGNAL GND SIGNAL OUTPUT RG-174/U(BLACK) POWER SUPPLY GND AWG22 (BLACK) R7 29 DY6 6 DY5 5 DY4 4 DY3 3 DY2 2 DY1 K 1 4 R6 R1 to R10 : 330 kΩ C1 to C3 : 10 nF 450 ± 10 30.0 +0 -1 R5 31.0 ± 0.5 R4 HOUSING (INSULATOR) POTTING COMPOUND R3 R2 R1 11 -HV AWG22 (VIOLET) TACCA0002EH ∗ Hamamatsu also provides C4900 series compact high voltage power supplies and C6270 series DP type socket assemblies which incorporate a DC to DC converter type high voltage power supply. Warning–Personal Safety Hazards Electrical Shock–Operating voltages applied to this device present a shock hazard. WEB SITE http://www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Electron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected] Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: [email protected] France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: [email protected] United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: [email protected] North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: [email protected] TPMS1057E02 Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: [email protected] JUL. 2002 IP