SO T1 43 B PESD2ETH-X Ultra low capacitance double rail-to-rail ESD protection diode 24 February 2016 Product data sheet 1. General description Ultra low capacitance double rail-to-rail ElectroStatic Discharge (ESD) protection diode in a small SOT143B Surface-Mounted Device (SMD) plastic package. The device is designed to protect two high-speed data lines or high-frequency signal lines from the damage caused by ESD and other transients. The device integrates two ultra low capacitance rail-to-rail diodes and one additional ESD protection diode to ensure signal line protection even if no supply voltage is available. 2. Features and benefits • • • • • ESD protection of two high-speed data lines Ultra low capacitance: Cd = 1 pF IEC 61000-4-2 up to 8 kV Very low reverse current AEC-Q101 qualified 3. Applications • • • 100BASE-T1 / OPEN Alliance BroadR-Reach automotive Ethernet Low-Voltage Differential Signaling (LVDS) automotive USB 2.0 automotive 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions diode capacitance f = 1 MHz; VR = 0 V; Tamb = 25 °C Min Typ Max Unit [1] - 1 1.5 pF [2] - 0.6 - pF [3] - 16 - pF - - 5.5 V Per diode Cd VRWM reverse standoff voltage [1] [2] [3] Tamb = 25 °C Measured from pin 2 and 3 to ground. Measured from pin 2 to pin 3. Measured from pin 4 to ground. Scan or click this QR code to view the latest information for this product PESD2ETH-X NXP Semiconductors Ultra low capacitance double rail-to-rail ESD protection diode 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 GND ground 2 I/O 1 input/output 1 3 I/O 2 input/output 2 4 VCC supply line Simplified outline 4 Graphic symbol 3 4 1 1 2 SOT143B 2 3 006aaa482 6. Ordering information Table 3. Ordering information Type number PESD2ETH-X Table 4. Package Name Description Version SOT143B plastic surface-mounted package; 4 leads SOT143B Marking codes Type number Marking code [1] PESD2ETH-X 2B% [1] PESD2ETH-X Product data sheet % = placeholder for manufacturing site code All information provided in this document is subject to legal disclaimers. 24 February 2016 © NXP Semiconductors N.V. 2016. All rights reserved 2 / 12 PESD2ETH-X NXP Semiconductors Ultra low capacitance double rail-to-rail ESD protection diode 7. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Tamb Conditions Min Max Unit ambient temperature -40 125 °C Tstg storage temperature -55 125 °C VESD electrostatic discharge voltage - 8 kV IEC 61000-4-2; level 4; contact discharge 001aaa631 IPP 100 % 90 % 10 % tr = 0.6 ns to 1 ns t 30 ns 60 ns Fig. 1. ESD pulse waveform according to IEC 61000-4-2 PESD2ETH-X Product data sheet All information provided in this document is subject to legal disclaimers. 24 February 2016 © NXP Semiconductors N.V. 2016. All rights reserved 3 / 12 PESD2ETH-X NXP Semiconductors Ultra low capacitance double rail-to-rail ESD protection diode 8. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit VRWM reverse standoff voltage Tamb = 25 °C - - 5.5 V VBR breakdown voltage IR = 1 mA; Tamb = 25 °C [1] 6 - 9 V VF forward voltage IF = 1 mA; Tamb = 25 °C [2] - 0.7 - V IR reverse current VR = 3 V; Tamb = 25 °C [3] - 1 100 nA Cd diode capacitance f = 1 MHz; VR = 0 V; Tamb = 25 °C [2] - 1 1.5 pF [4] - 0.6 - pF [1] - 16 - pF Per diode [1] [2] [3] [4] Measured from pin 4 to ground. Measured from pin 2 and 3 to ground. Measured from pin 2, 3 and 4 to ground. Measured from pin 2 to pin 3. aaa-022056 2.0 Cd (pF) Cd (pF) 1.6 0.8 1.2 0.6 0.8 0.4 0.4 0.2 0 0 1 2 3 4 VR (V) 0 5 f = 1 MHz; Tamb = 25 °C Product data sheet 1 2 3 4 VR (V) 5 Measured from pin 2 to pin 3. Diode capacitance as a function of reverse voltage; typical values PESD2ETH-X 0 f = 1 MHz; Tamb = 25 °C Measured from pin 2 and 3 to ground. Fig. 2. aaa-022058 1.0 Fig. 3. Diode capacitance as a function of reverse voltage; typical values All information provided in this document is subject to legal disclaimers. 24 February 2016 © NXP Semiconductors N.V. 2016. All rights reserved 4 / 12 PESD2ETH-X NXP Semiconductors Ultra low capacitance double rail-to-rail ESD protection diode ESD TESTER 4 GHz DIGITAL OSCILLOSCOPE RG 223/U 50 Ω coax Rd 40 dB ATTENUATOR Cs 50 Ω DUT (DEVICE UNDER TEST) IEC 61000-4-2 ed.2 Cs = 150 pF; Rd = 330 Ω 10 2 V (kV) 8 V (kV) 0 6 -2 4 -4 2 -6 0 -8 -2 -10 0 10 20 30 40 50 t (ns) 60 70 -10 -10 unclamped +8 kV ESD pulse waveform (IEC 61000-4-2 network) 0 10 20 30 40 50 t (ns) 60 70 unclamped -8 kV ESD pulse waveform (IEC 61000-4-2 network) aaa-003952 Fig. 4. ESD clamping test setup and waveforms aaa-022059 300 VCL (V) VCL (V) 200 50 100 -50 0 -100 -10 Fig. 5. aaa-022060 150 -150 VCL at 30 ns = 35 V 0 10 20 30 40 50 60 t (ns) -250 -10 70 Clamped +8 kV pulse waveform (IEC 61000-4-2 network) PESD2ETH-X Product data sheet Fig. 6. VCL at 30 ns = -5 V 0 20 30 40 50 60 t (ns) 70 Clamped -8 kV pulse waveform (IEC 61000-4-2 network) All information provided in this document is subject to legal disclaimers. 24 February 2016 10 © NXP Semiconductors N.V. 2016. All rights reserved 5 / 12 PESD2ETH-X NXP Semiconductors Ultra low capacitance double rail-to-rail ESD protection diode 9. Application information connector TDN 100BASE-T1 BroadR-Reach PHY common mode choke TJA1100 TDP PESD2ETH-X aaa-021940 Fig. 7. Application diagram: BroadR-Reach PHY / 100BASE-T1 Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. 2. 3. 4. 5. Place the device as close to the input terminal or connector as possible. Minimize the path length between the device and the protected line. Keep parallel signal paths to a minimum. Avoid running protected conductors in parallel with unprotected conductors. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Use ground planes whenever possible. For multilayer PCBs, use ground vias. 10. Test information 10.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PESD2ETH-X Product data sheet All information provided in this document is subject to legal disclaimers. 24 February 2016 © NXP Semiconductors N.V. 2016. All rights reserved 6 / 12 PESD2ETH-X NXP Semiconductors Ultra low capacitance double rail-to-rail ESD protection diode 11. Package outline 3.0 2.8 1.1 0.9 1.9 4 2.5 2.1 3 0.45 0.15 1.4 1.2 1 2 0.88 0.78 0.48 0.38 0.15 0.09 1.7 Dimensions in mm Fig. 8. 04-11-16 Package outline SOT143B 12. Soldering 3.25 0.6 (3×) 0.5 (3×) 1.9 solder lands 0.7 0.6 (3×) (3×) solder resist 2 3 solder paste occupied area 0.7 0.6 Dimensions in mm 0.75 0.95 0.9 1 Fig. 9. sot143b_fr Reflow soldering footprint for SOT143B PESD2ETH-X Product data sheet All information provided in this document is subject to legal disclaimers. 24 February 2016 © NXP Semiconductors N.V. 2016. All rights reserved 7 / 12 PESD2ETH-X NXP Semiconductors Ultra low capacitance double rail-to-rail ESD protection diode 4.45 2.2 1.2 (3×) 1.425 (3×) solder lands 4.6 solder resist 2.575 occupied area Dimensions in mm 1.425 preferred transport direction during soldering 1 1.2 sot143b_fw Fig. 10. Wave soldering footprint for SOT143B PESD2ETH-X Product data sheet All information provided in this document is subject to legal disclaimers. 24 February 2016 © NXP Semiconductors N.V. 2016. All rights reserved 8 / 12 PESD2ETH-X NXP Semiconductors Ultra low capacitance double rail-to-rail ESD protection diode 13. Revision history Table 7. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PESD2ETH-X v.1 20160224 Product data sheet - - PESD2ETH-X Product data sheet All information provided in this document is subject to legal disclaimers. 24 February 2016 © NXP Semiconductors N.V. 2016. All rights reserved 9 / 12 PESD2ETH-X NXP Semiconductors Ultra low capacitance double rail-to-rail ESD protection diode In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 14. Legal information 14.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. 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Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. 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NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. 24 February 2016 © NXP Semiconductors N.V. 2016. All rights reserved 10 / 12 PESD2ETH-X NXP Semiconductors Ultra low capacitance double rail-to-rail ESD protection diode No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 14.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Limiting values .......................................................3 8 Characteristics ....................................................... 4 9 Application information .........................................6 10 10.1 Test information ..................................................... 6 Quality information ............................................... 6 11 Package outline ..................................................... 7 12 Soldering ................................................................ 7 13 Revision history ..................................................... 9 14 14.1 14.2 14.3 14.4 Legal information .................................................10 Data sheet status ............................................... 10 Definitions ...........................................................10 Disclaimers .........................................................10 Trademarks ........................................................ 11 © NXP Semiconductors N.V. 2016. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 24 February 2016 PESD2ETH-X Product data sheet All information provided in this document is subject to legal disclaimers. 24 February 2016 © NXP Semiconductors N.V. 2016. All rights reserved 12 / 12