SO T1 43 B PESD2ETH-AX Ultra low capacitance double rail-to-rail ESD protection diode 24 February 2016 Product data sheet 1. General description Ultra low capacitance double rail-to-rail ElectroStatic Discharge (ESD) protection diode in a small SOT143B Surface-Mounted Device (SMD) plastic package. The device is designed to protect two high-speed data lines or high-frequency signal lines from the damage caused by ESD and other transients. The device integrates two ultra low capacitance rail-to-rail diodes and one additional ESD protection diode to ensure signal line protection even if no supply voltage is available. 2. Features and benefits • • • • • • ESD protection of two high-speed data lines Ultra low capacitance: Cd = 1.8 pF IEC 61000-4-2 up to 12 kV ISO 10605 (330 pF, 2 kΩ) up to 15 kV Very low reverse current AEC-Q101 qualified 3. Applications • • • 100BASE-T1 / OPEN Alliance BroadR-Reach automotive Ethernet Low-Voltage Differential Signaling (LVDS) automotive USB 2.0 automotive 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Cd diode capacitance f = 1 MHz; VR = 0 V; Tamb = 25 °C VRWM reverse standoff voltage Tamb = 25 °C diode capacitance f = 1 MHz; VR = 0 V; Tamb = 25 °C Min Typ Max Unit - 16 - pF - - 5.5 V - 1.8 - pF Zener diode [1] Per channel Cd [1] [2] Measured from pin 4 to ground. Measured from pin 2 and 3 to ground. Scan or click this QR code to view the latest information for this product [2] PESD2ETH-AX NXP Semiconductors Ultra low capacitance double rail-to-rail ESD protection diode 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 GND ground 2 I/O 1 input/output 1 3 I/O 2 input/output 2 4 VCC supply line Simplified outline 4 Graphic symbol 3 4 1 1 2 SOT143B 2 3 006aaa482 6. Ordering information Table 3. Ordering information Type number PESD2ETH-AX Package Name Description Version SOT143B plastic surface-mounted package; 4 leads SOT143B 7. Marking Table 4. Marking codes Type number Marking code [1] PESD2ETH-AX 2A% [1] PESD2ETH-AX Product data sheet % = placeholder for manufacturing site code All information provided in this document is subject to legal disclaimers. 24 February 2016 © NXP Semiconductors N.V. 2016. All rights reserved 2 / 12 PESD2ETH-AX NXP Semiconductors Ultra low capacitance double rail-to-rail ESD protection diode 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Tamb Conditions Min Max Unit ambient temperature -40 125 °C Tstg storage temperature -55 125 °C VESD electrostatic discharge voltage - 12 kV IEC 61000-4-2; level 4; contact discharge 001aaa631 IPP 100 % 90 % 10 % tr = 0.6 ns to 1 ns t 30 ns 60 ns Fig. 1. ESD pulse waveform according to IEC 61000-4-2 PESD2ETH-AX Product data sheet All information provided in this document is subject to legal disclaimers. 24 February 2016 © NXP Semiconductors N.V. 2016. All rights reserved 3 / 12 PESD2ETH-AX NXP Semiconductors Ultra low capacitance double rail-to-rail ESD protection diode 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit VRWM reverse standoff voltage Tamb = 25 °C - - 5.5 V VBR breakdown voltage IR = 1 mA; Tamb = 25 °C [1] 6 - 9 V Cd diode capacitance f = 1 MHz; VR = 0 V; Tamb = 25 °C [1] - 16 - pF VF forward voltage IF = 1 mA; Tamb = 25 °C [2] - 0.7 - V IR reverse current VR = 3 V; Tamb = 25 °C [3] - 1 100 nA Cd diode capacitance f = 1 MHz; VR = 0 V; Tamb = 25 °C [2] - 1.8 - pF Zener diode Per channel [1] [2] [3] Measured from pin 4 to ground. Measured from pin 2 and 3 to ground. Measured from pin 2, 3 and 4 to ground. aaa-022029 2.2 Cd (pF) 2.0 1.8 1.6 1.4 1.2 0 1 2 3 4 VR (V) 5 f = 1 MHz; Tamb = 25 °C Measured from pin 2 and 3 to ground. Fig. 2. Diode capacitance as a function of reverse voltage; typical values PESD2ETH-AX Product data sheet All information provided in this document is subject to legal disclaimers. 24 February 2016 © NXP Semiconductors N.V. 2016. All rights reserved 4 / 12 PESD2ETH-AX NXP Semiconductors Ultra low capacitance double rail-to-rail ESD protection diode ESD TESTER 4 GHz DIGITAL OSCILLOSCOPE RG 223/U 50 Ω coax Rd 40 dB ATTENUATOR Cs 50 Ω DUT (DEVICE UNDER TEST) IEC 61000-4-2 ed.2 Cs = 150 pF; Rd = 330 Ω 10 2 V (kV) 8 V (kV) 0 6 -2 4 -4 2 -6 0 -8 -2 -10 0 10 20 30 40 50 t (ns) 60 70 -10 -10 unclamped +8 kV ESD pulse waveform (IEC 61000-4-2 network) 0 10 20 30 40 50 t (ns) 60 70 unclamped -8 kV ESD pulse waveform (IEC 61000-4-2 network) aaa-003952 Fig. 3. ESD clamping test setup and waveforms aaa-022035 250 VCL (V) 200 aaa-022036 150 VCL (V) 50 150 100 -50 50 VCL at 30 ns = -2.4 V 0 -150 VCL at 30 ns = 27 V -50 -100 -10 Fig. 4. 0 10 20 30 40 50 60 t (ns) -250 -10 70 Clamped +8 kV pulse waveform (IEC 61000-4-2 network) PESD2ETH-AX Product data sheet Fig. 5. 0 20 30 40 50 60 t (ns) 70 Clamped -8 kV pulse waveform (IEC 61000-4-2 network) All information provided in this document is subject to legal disclaimers. 24 February 2016 10 © NXP Semiconductors N.V. 2016. All rights reserved 5 / 12 PESD2ETH-AX NXP Semiconductors Ultra low capacitance double rail-to-rail ESD protection diode 10. Application information connector TDN 100BASE-T1 BroadR-Reach PHY common mode choke TJA1100 TDP PESD2ETH-AX aaa-021937 Fig. 6. Application diagram: BroadR-Reach PHY / 100BASE-T1 Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. 2. 3. 4. 5. Place the device as close to the input terminal or connector as possible. Minimize the path length between the device and the protected line. Keep parallel signal paths to a minimum. Avoid running protected conductors in parallel with unprotected conductors. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Use ground planes whenever possible. For multilayer PCBs, use ground vias. 11. Test information 11.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PESD2ETH-AX Product data sheet All information provided in this document is subject to legal disclaimers. 24 February 2016 © NXP Semiconductors N.V. 2016. All rights reserved 6 / 12 PESD2ETH-AX NXP Semiconductors Ultra low capacitance double rail-to-rail ESD protection diode 12. Package outline 3.0 2.8 1.1 0.9 1.9 4 2.5 2.1 3 0.45 0.15 1.4 1.2 1 2 0.88 0.78 0.48 0.38 0.15 0.09 1.7 Dimensions in mm Fig. 7. 04-11-16 Package outline SOT143B 13. Soldering 3.25 0.6 (3×) 0.5 (3×) 1.9 solder lands 0.7 0.6 (3×) (3×) solder resist 2 3 solder paste occupied area 0.7 0.6 Dimensions in mm 0.75 0.95 0.9 1 Fig. 8. sot143b_fr Reflow soldering footprint for SOT143B PESD2ETH-AX Product data sheet All information provided in this document is subject to legal disclaimers. 24 February 2016 © NXP Semiconductors N.V. 2016. All rights reserved 7 / 12 PESD2ETH-AX NXP Semiconductors Ultra low capacitance double rail-to-rail ESD protection diode 4.45 2.2 1.2 (3×) 1.425 (3×) solder lands 4.6 solder resist 2.575 occupied area Dimensions in mm 1.425 preferred transport direction during soldering 1 1.2 Fig. 9. sot143b_fw Wave soldering footprint for SOT143B PESD2ETH-AX Product data sheet All information provided in this document is subject to legal disclaimers. 24 February 2016 © NXP Semiconductors N.V. 2016. All rights reserved 8 / 12 PESD2ETH-AX NXP Semiconductors Ultra low capacitance double rail-to-rail ESD protection diode 14. Revision history Table 7. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PESD2ETH-AX v.1 20160224 Product data sheet - - PESD2ETH-AX Product data sheet All information provided in this document is subject to legal disclaimers. 24 February 2016 © NXP Semiconductors N.V. 2016. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Characteristics ....................................................... 4 10 Application information .........................................6 11 11.1 Test information ..................................................... 6 Quality information ............................................... 6 12 Package outline ..................................................... 7 13 Soldering ................................................................ 7 14 Revision history ..................................................... 9 15 15.1 15.2 15.3 15.4 Legal information .................................................10 Data sheet status ............................................... 10 Definitions ...........................................................10 Disclaimers .........................................................10 Trademarks ........................................................ 11 © NXP Semiconductors N.V. 2016. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 24 February 2016 PESD2ETH-AX Product data sheet All information provided in this document is subject to legal disclaimers. 24 February 2016 © NXP Semiconductors N.V. 2016. All rights reserved 12 / 12