Variable Capacitance Diodes MA27V04 Silicon epitaxial planar type Unit: mm For VCO 0.27+0.05 –0.02 0.10+0.05 –0.02 Symbol Rating Unit VR 6 V Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0.15 min. 0.52±0.03 5° 0.15 max. 0.60±0.05 0 to 0.01 Parameter Reverse voltage (DC) 1 0.15 min. ■ Absolute Maximum Ratings Ta = 25°C 5° 1.00±0.05 • Good linearity and large capacitance-ratio in CD − VR relation • Small series resistance rD • SSS-Mini type package, allowing downsizing of equipment and automatic insertion through the taping package 1.40±0.05 2 ■ Features 1: Anode 2: Cathode SSSMini2-F1 Package Marking Symbol: 4 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Reverse current (DC) Diode capacitance Series resistance * Symbol IR Conditions Min VR = 5 V Typ Max Unit 10 nA pF CD(1V) VR = 1 V, f = 1 MHz 10.0 11.1 CD(3V) VR = 3 V, f = 1 MHz 5.8 6.4 rD VR = 3 V, f = 470 MHz 0.35 Ω Note) 1. Rated input/output frequency: 470 MHz 2. * : Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER Publication date: April 2002 SKD00057AED 1 MA27V04 I F VF CD VR 120 100 Ta = 60°C −40°C 40 1.024 VR = 1 V 1.020 CD (Ta) CD (Ta = 25°C) Diode capacitance CD (pF) 1.028 80 60 f = 1 MHz 1.032 25°C 100 Forward current IF (mA) CD Ta 1.036 f = 1 MHz Ta = 25°C 10 1.016 1.012 1.008 3V 1.004 1.000 0.996 20 0.992 0.988 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Forward voltage VF (V) 0.984 1 0 2 4 6 8 IR T a Reverse current IR (nA) 10 VR = 5 V 1 0.1 0.01 0 20 40 60 80 100 120 140 Ambient temperature Ta (°C) 2 10 Reverse voltage VR (V) SKD00057AED 12 0 20 40 60 80 Ambient temperature Ta (°C) 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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