PANASONIC MA2D750

Schottky Barrier Diodes (SBD)
MA2D750
Silicon epitaxial planar type
Unit: mm
For switching mode power supply
4.6±0.2
9.9±0.3
3.0±0.5
2.9±0.2
φ 3.2±0.1
15.0±0.5
■ Features
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol
Rating
Unit
Repetitive peak reverse-voltage
VRRM
40
V
Average forward current
IF(AV)
10
A
Non-repetitive peak forwardsurge-current *
IFSM
60
A
Junction temperature
Tj
−40 to +125
°C
Storage temperature
Tstg
−40 to +125
°C
13.7±0.2
4.2±0.2
Solder Dip
+0
1.5-0.4
• IF(AV) = 10 A rectification is possible
• Single type
• TO-220D-B1 package
2.6±0.1
1.4±0.2
0.8±0.1
0.55±0.15
2.54±0.30
5.08±0.50
1
2
1 : Cathode
2 : Anode
TO-220D-B1 Package
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Reverse current (DC)
Forward voltage (DC)
High voltage rectification
Symbol
Max
Unit
IR
VR = 40 V, TC = 25°C
Conditions
3
mA
VF
IF = 10 A, TC = 25°C
0.55
V
3.0
°C/W
Rth(j-c)
Min
Typ
Note) Rated input/output frequency: 10 MHz
Publication date: August 2001
SKH00005AED
1
MA2D750
IF  V F
105
IR  V R
102
TC = 125°C
104 TC = 125°C
Reverse current IR (mA)
Forward current IF (mA)
10
103
75°C
102
25°C
−20°C
10
1
10−1
75°C
1
10−2
25°C
10−3
10−2
10−3
0
0.2
0.4
0.6
0.8
1.0
Forward voltage VF (V)
2
1.2
10−4
0
10
20
30
40
50
Reverse voltage VR (V)
SKH00005AED
60
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2001 MAR