PANASONIC MA3SE02

Schottky Barrier Diodes (SBD)
MA3SE02
Silicon epitaxial planar type
Unit: mm
0.28±0.05
0.80±0.05
(0.44)
■ Features
0.12+0.05
–0.02
0.88+0.05
–0.03
1.60±0.05
3°
(0.44)
1 2
(0.80)
3
• High-frequency wave detection is possible
• Low forward voltage VF
• Small terminal capacitance Ct
• SS-Mini type 3-pin package
0.28±0.05
(0.51)
(0.51)
(0.80) (0.80)
0.60+0.05
–0.03
1.60+0.05
–0.03
■ Absolute Maximum Ratings Ta = 25°C
3°
Rating
Unit
Reverse voltage (DC)
VR
20
V
Peak reverse voltage
VRM
20
V
IF
35
mA
Forward current (DC)
Single
Series Peak forward current
Single
25
IFM
100
Series mA
70
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
1 : Anode 1
2 : Cathode 2
3 : Cathode 1
Anode 2
EIAJ : SC-89
(0.15)
Symbol
0 to 0.1
Parameter
(0.375)
For cellular phone
SSMini3-F2 Package
Marking Symbol: M6B
Internal Connection
3
1
2
■ Absolute Maximum Ratings Ta = 25°C ± 3°C
Parameter
Reverse current (DC)
Symbol
Conditions
Min
Typ
Max
Unit
IR
VR = 15 V
200
nA
V
VF1
IF = 1 mA
0.40
VF2
IF = 35 mA
1.0
Terminal capacitance
Ct
VR = 0 V, f = 1 MHz
Forword dynamic resistance
rf
IF = 5 mA
Forward voltage (DC)
1.2
9
pF
Ω
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 GHz
Publication date: August 2001
SKH00067AED
1
MA3SE02
IR  VR
103
2
10
Ta = 125°C
1
75°C
10−1
25°C
10−2
10−3
0.8
0.6
0.4
0.2
0
0
5
10
15
20
Reverse voltage VR (V)
2
Ta = 25°C
1.0
Terminal capacitance Ct (pF)
Reverse current IR (µA)
10
Ct  VR
1.2
25
0
5
10
15
20
Reverse voltage VR (V)
SKH00067AED
25
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Due to modification or other reasons, any information contained in this material, such as available
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2001 MAR