PANASONIC MA2YD15

Schottky Barrier Diodes (SBD)
MA2YD15
Silicon epitaxial planar type
Unit: mm
For high frequency rectification
0.80±0.05
1.6±0.1
1
0 to 0.1
■ Features
5°
2.6±0.1
3.5±0.1
• IF(AV) = 1 A rectification is possible
• Low forward voltage VF
• Small reverse current IR
• Mini type 2-pin package
2
0.45±0.1
0.55±0.1
0.16+0.1
–0.06
5°
Reverse voltage (DC)
Symbol
Rating
Unit
VR
20
V
VRRM
25
V
IF(AV)
1
A
IFSM
3
A
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
Repetitive peak reverse-voltage
Average forward current
*1
Non-repetitive peak forwardsurge-current *2
0 to 0.3
Parameter
0 to 0.1
■ Absolute Maximum Ratings Ta = 25°C
1 : Anode
2 : Cathode
Mini2-F1 Package
Marking Symbol: 2R
Note) *1: Mounted on a alumina PC board
*2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
IR
VR = 20 V
100
µA
Forward voltage (DC)
VF
IF = 1 A
0.45
V
Terminal capacitance
Ct
VR = 0 V, f = 1 MHz
120
pF
Reverse recovery time *
trr
IF = IR = 100 mA
Irr = 10 mA, RL = 100 Ω
10
ns
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. *: trr measuring instrument
Bias Application Unit N-50BU
Input Pulse
tp
tr
10%
A
90%
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
Publication date: August 2001
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
SKH00031AED
Output Pulse
t
IF
trr
t
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100 Ω
1
MA2YD15
IF  V F
IR  V R
Ta = 125°C
102
75°C
25°C
10
1
10−1
0
0.1
0.2
0.3
0.4
0.5
0.6
Forward voltage VF (V)
1
75°C
10−1
25°C
10−3
10
5
10
15
20
10−2
20
40
60
80
100
120 140
Ambient temperature Ta (°C)
2
25
30
Reverse voltage VR (V)
10 V
5V
30 V
0
0.3
700 mA
0.2
0
0
1
10−3
IF = 1 A
100 mA
VR = 20 V
10−1
0.4
0.1
IR  T a
102
Reverse current IR (mA)
Ta = 125°C
10−2
10−2
10−3
10
Forward voltage VF (V)
0.5
Reverse current IR (mA)
Forward current IF (mA)
103
VF  Ta
0.6
102
104
SKH00031AED
35
0
20
40
60
80
100 120 140
Ambient temperature Ta (°C)
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and semiconductors described in this material
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make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
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Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic
semiconductor products best suited to their applications.
Due to modification or other reasons, any information contained in this material, such as available
product types, technical data, and so on, is subject to change without notice.
Customers are advised to contact our semiconductor sales office and obtain the latest information
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2001 MAR