EEPROMs MN61113, MN61113S 2K-Bit EEPROMs Overview The MN61113 and MN61113S are 2048-bit, bit sequential EEPROMs with built-in address counters. They sequentially increment the address with the clock input to produce serial output. They include built-in charge pump circuit and timer for automatically erasing, writing, and modifying data using only a single 3 volt power supply. To reduce write times, they include a block write function for writing up to 32 bits at a time. This function makes it possible to rewrite the contents of all 2048 bits within 1 second (typ.). Pin Assignment MN61113 MN61113S DIP008-P-0300A SOP008-P-0225 DATA 1 8 OE CE 2 7 RST VCC 3 6 CLK GND 4 5 PGM Features 2048 words × 1 bit organization Built-in reset function Tristate output Low power consumption • 3 volt read: 1.5 mW (max.) (TOP VIEW) • 3 volt program: 6 mW (max.) • 3 volt standby: 60 µW (max.) Single 3 volt power supply (charge pump circuit built in) Self timer for use in automatically erasing and writing data Built-in data polling function Write cycles: 105 times Data storage interval: 10 years Pull-up resistor on CE pin. Pull-down resistors on PGM, CLK, and RST pins Applications Personal wireless equipment, cordless telephones, storage for recognition and adjustment data for terminals, etc. 1 MN61113, MN61113S EEPROMs Block Diagram Data latch pump RST CE OE PGM 6 Row decoder 8-bit counter 7 Clock generator CLK Column decoder Column gate Control logic 5 VPP generator Data I/O buffer DATA 1 Timer 2 3 4 2 8 64 × 16 cell matrix VCC GND EEPROMs MN61113, MN61113S Pin Descriptions Pin No. 1 Symbol DATA Pin Name Data I/O 2 CE Chip enable 3 VCC Power supply voltage 4 GND Ground 5 PGM Program 6 CLK Clock input 7 RST Reset input 8 OE Output enable Electrical Characteristics VCC=2.6 to 3.5V, Ta=–10˚C to +60˚C 3 Volt Operation Parameter Power supply voltage "L" level input leakage current "H" level input leakage current Symbol VCC ILIL ILIH Output leakage current ILO "L" level input voltage VIL "H" level input voltage VCC power supply current Test Conditions ICC 2.6 3.5 Program mode 3.0 3.5 CE pin –50 — Other pins –10 10 PGM, CLK, and RST pins — –20 Other pins –10 10 — 10 – 0.1 Read mode CLK;f=250kHz Program mode VCC power supply current ISB (during standby) max Read mode VIH (during operation) min 0.2 VCC Unit V µA µA µA V 0.8 VCC VCC +0.3 — 500 — 2000 — 20 µA — 0.3 V — V V µA CE = VCC+ 0.3 V; RST and PGM pins at VCC; CLK pin open "L" level output voltage VOL "H" level output voltage VOH IOL=400µA IOH=10µA VCC – 0.3 3 MN61113, MN61113S EEPROMs Function Descriptions Operating Modes Pin Symbol (Pin No.) CE OE PGM DATA (2) (8) (5) (1) Read VIL VIL × DOUT Standby VIH × × High-impedance Program VIL VIH Operating Mode 4 DIN EEPROMs MN61113, MN61113S Package Dimensions (Unit:mm) DIP008-P-0300A 3.45±0.30 4.80 max. 9.60±0.40 0.50±0.10 0.70±0.10 1.30±0.10 SEATING PLANE SEE DETAIL F SOP008-P-0225 1.50±0.20 5 0.60 1 4 SEATING PLANE 4.30±0.20 8 6.50±0.30 MN61113S 2.54 5° 4 0° to 1 1 3.30±0.20 6.40±0.20 5 0.70 min. 8 7.62±0.20 +0.20 0.25 –0.05 MN61113 1.90 DETAIL F 1.10±0.20 5.00±0.20 1.27 SEATING PLANE 0.40±0.10 0.30 5