EEPROMs MN6311S 2K-Bit EEPROM Overview The MN6311S is a 2048-bit, bit sequential EEPROM with a built-in address counter. It sequentially increments the address with the clock input to produce serial output. It includes a built-in charge pump circuit and timer for automatically erasing, writing, and modifying data using only a single 3 volt power supply. To reduce write times, it includes a block write function for writing up to 32 bits at a time. This function makes it possible to rewrite the contents of all 2048 bits within 1 second (typ.). Features 2048 words × 1 bit organization Built-in reset function Tristate output Low power consumption · 3 volt read: 1.5 mW (max.) Pin Assignment DATA 1 8 OE CE 2 7 RST VCC 3 6 CLK GND 4 5 PGM (TOP VIEW) SOP008-P-0225 · 3 volt program: 6 mW (max.) · 3 volt standby: 60 µW (max.) Single 3 volt power supply (charge pump circuit built-in) Self timer for use in automatically erasing and writing data Built-in data polling function Write cycles: 105 times Data storage interval: 10 years Applications Personal wireless equipment, cordless telephones, storage for recognition and adjustment data for terminals, etc. 1 MN6311S EEPROMs Block Diagram Data latch pump Row decoder RST 6 3 8-bit counter 7 Clock generator CLK 64 × 16 cell matrix 4 Column decoder Column gate CE 2 OE 8 Control logic PGM 5 VPP generator Data I/O buffer DATA 1 Timer 2 VCC GND EEPROMs MN6311S Pin Descriptions Pin No. 1 Symbol DATA Pin Name Data I/O 2 CE Chip enable 3 VCC Power supply voltage 4 GND Ground 5 PGM Program 6 CLK Clock input 7 RST Reset input 8 OE Output enable Electrical Characteristics VCC=2.6 to 3.5V, Ta=–10˚C to +60˚C 3 Volt Operation Parameter Power supply voltage "L" level input leakage current "H" level input leakage current Symbol VCC ILIL ILIH Test Conditions min max Read mode 2.6 3.5 Program mode 3.0 3.5 CE pin –50 — Other pins –10 10 PGM, CLK, and RST pins — –20 Other pins –10 10 Output leakage current ILO — 10 "L" level input voltage VIL – 0.1 0.2 VCC "H" level input voltage VCC power supply current VIH ICC (during operation) Read mode CLK;f=250kHz Program mode VCC power supply current ISB (during standby) Unit V µA µA µA V 0.8 VCC VCC +0.3 — 500 — 2000 — 20 µA — 0.3 V — V V µA CE = VCC+ 0.3 V; RST and PGM pins at VCC; CLK pin open "L" level output voltage VOL IOL=400 µA "H" level output voltage VOH IOH=10 µA VCC – 0.3 3 MN6311S EEPROMs Function Descriptions Operating Modes Pin Symbol (Pin No.) CE OE PGM DATA (2) (8) (5) (1) Read VIL VIL × DOUT Standby VIH × × High-impedance Program VIL VIH Operating Mode 4 DIN EEPROMs MN6311S Package Dimensions (Unit:mm) SEE DETAIL F SOP008–P–0225 1.50±0.20 5 0.60 1 4 SEATING PLANE 4.30±0.20 6.50±0.30 8 1.90 DETAIL F 1.10±0.20 5.00±0.20 1.27 SEATING PLANE 0.40±0.10 0.30 5