Switching Diodes MA6X128 (MA128) Silicon epitaxial planar type Unit : mm For switching circuits + 0.2 2.8 − 0.3 + 0.25 2 4 3 + 0.1 0.16 − 0.06 + 0.2 2.9 − 0.05 + 0.2 5 0.8 1.1 − 0.1 1.9 ± 0.2 0.95 0.95 6 • Four-element contained in one package, allowing high-density mounting • Centrosymmetrical wiring, allowing to free from the taping direction • The mirror image wiring of MA6X123 (MA123) • Short reverse recovery time trr • Small terminal capacitance, Ct • High breakdown voltage (VR = 80 V) 1.45 1 + 0.1 ■ Features 0.65 ± 0.15 1.5 − 0.05 0.3 − 0.05 0.65 ± 0.15 0 to 0.1 0.1 to 0.3 0.4 ± 0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Reverse voltage (DC) VR 80 V Peak reverse voltage VRM 80 V IF 100 mA Forward current (DC)*1 Peak forward current*1 Non-repetitive peak forward surge current*1,2 Junction temperature Storage temperature 1 : Cathode 3,4 4 : Cathode 1,2 2 : Anode 1 5 : Anode 3 3 : Anode 2 6 : Anode 4 Mini Type Package (6-pin) Marking Symbol: M2V IFM 225 mA IFSM 500 mA Tj 150 °C 6 1 °C 5 2 4 3 −55 to +150 Tstg Internal Connection Note) *1 : Value for single diode *2 : t = 1 s ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit 100 nA IR VR = 75 V Forward voltage (DC) VF IF = 100 mA Reverse voltage (DC) VR IR = 100 µA Terminal capacitance Ct VR = 0 V, f = 1 MHz 2 pF trr IF = 10 mA, VR = 6 V Irr = 0.1 · IR, RL = 100 Ω 3 ns Reverse current (DC) Reverse recovery time* 1.2 80 V V Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 0.1 · IR IF = 10 mA VR = 6 V RL = 100 Ω Note) The part numbers in the parenthesis show conventional part number. 121 MA6X128 Switching Diodes IF V F VF Ta IR V R 103 100 102 10 1.6 10 Ta = 150°C 1 100°C 25°C − 20°C 10−1 1.4 Forward voltage VF (V) Reverse current IR (µA) Forward current IF (mA) Ta = 150°C 100°C 1 0.1 25°C 0.01 1.2 1.0 IF = 100 mA 0.8 0.6 10 mA 3 mA 0.4 0.2 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 0 20 Forward voltage VF (V) IR Ta 1 10−1 10−2 0 40 80 120 0 −40 120 0 40 160 Ambient temperature Ta (°C) 200 120 0.8 0.6 0.4 0.2 0 20 40 60 80 160 200 IF(surge) tW 1.0 0 80 Ambient temperature Ta (°C) f = 1 MHz Ta = 25°C Terminal capacitance Ct (pF) Reverse current IR (µA) 100 1 000 35 V 1V 10 122 80 1.2 VR = 75 V −40 60 Ct VR 102 10−3 40 Reverse voltage VR (V) 100 Reverse voltage VR (V) 120 Forward surge current IF (surge) (A) 10−2 Ta = 25°C IF(surge) 300 tW Non repetitive 100 30 10 3 1 0.3 0.1 0.03 0.1 0.3 1 3 Pulse width tW (ms) 10 30 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR