Small Signal Transistor Arrays UNA0206 (UN206) Transistor array to drive the small motor ■ Features ● 5 ● ● Video cameras Cameras Portable CD players Small motor drive circuits in general for electronic equipment. ■ Absolute Maximum Ratings Symbol Ratings Unit Collector to base voltage VCBO ±20 V Collector to emitter voltage VCEO ±18 V Emitter to base voltage VEBO ±5 V IC ±1 A PT* 0.5 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C Total power dissipation 7 8 9 10 0.9±0.1 6.5±0.3 12˚ (Ta=25±2˚C) Parameter Collector current 6 (0.8) 1.5±0.1 1.5+0.2 –0.1 ● 12˚ ■ Applications ● 0.2+0.1 –0.0 (0.5) 0.4±0.1 4 3 2 1 0.5±0.2 ● 45˚ ● Unit: mm Small and lightweight Low power consumption (low VCE(sat) transistor used) Protective diode incorporated (C-E monolithic) Low-voltage drive 5.5±0.3 7.7±0.3 ● Note: ± marks used above: +: NPN part, –: PNP part SO10-G1 Package Internal Connection 1 10 2 9 3 8 4 7 5 6 * TC = 25˚C only when the elements are active Note.) The Part number in the Parenthesis shows conventional part number. 1 Small Signal Transistor Arrays ■ Electrical Characteristics (Ta=25±2˚C) Parameter Symbol Collector cutoff current ICBO Collector cutoff current ICER Collector to base voltage VCBO Collector to emitter voltage VCEO Emitter to base voltage VEBO Forward voltage (DC) VF Forward current transfer ratio Forward current transfer ratio UNA0206 Conditions min typ max (NPN) VCB = 20V, IE = 0 1 (PNP) VCB = –20V, IE = 0 –1 (NPN) VCE = 18V, RBE = 100kΩ 10 (PNP) VCE = –18V, RBE = 100kΩ –10 (NPN) IC = 10µA, IE = 0 20 (PNP) IC = –10µA, IE = 0 –20 (NPN) IC = 1mA, IB = 0 18 (PNP) IC = –1mA, IB = 0 –18 (NPN) IE = 10µA, IC = 0 5 (PNP) IE = –10µA, IC = 0 –5 hFE1 V 1.5 hFE2 Collector to emitter saturation voltage VCE(sat)1 Collector to emitter saturation voltage VCE(sat)2 Transition frequency fT Collector output capacitance Cob 360 360 (PNP) VCE = –2V, IC = – 0.5A* 90 50 (PNP) VCE = –2V, IC = – 1.5A* 50 µA V 90 (NPN) VCE = 2V, IC = 1.5A* µA V IF = 1A (NPN) VCE = 2V, IC = 0.5A* Unit (NPN) IC = 0.3A, IB = 10mA 0.2 (PNP) IC = – 0.3A, IB = –10mA – 0.2 (NPN) IC = 0.7A, IB = 10mA 0.6 (PNP) IC = – 0.7A, IB = –10mA – 0.6 (NPN) VCB = 6V, IE = 50mA, f = 200MHz 150 (PNP) VCB = –6V, IE = –50mA, f = 200MHz 200 (NPN) VCB = 6V, IE = 0, f = 1MHz 20 (PNP) VCB = –6V, IE = 0, f = 1MHz 40 V V V MHz pF *Pulse measurement Characteristics charts of PNP transistor block PT — Ta IC — VCE 0.6 IC — VBE –3.0 –3.0 VCE=–2V 0.5 0.3 0.2 0.1 –2.0 IB= –14mA –12mA –10mA –1.5 –8mA –1.0 –6mA –4mA Collector current IC (A) 0.4 25˚C –2.0 Ta=75˚C –25˚C –0.4 –0.8 –1.2 –1.5 –1.0 –0.5 –0.5 –2mA 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) 2 –2.5 –2.5 Collector current IC (A) Total power dissipation PT (W) Ta=25˚C 0 0 0 –2 –4 –6 –8 –10 Collector to emitter voltage VCE (V) –12 0 –1.6 –2.0 –2.4 Base to emitter voltage VBE (V) Small Signal Transistor Arrays UNA0206 VCE(sat) — IC hFE — IC IC/IB=30 –1 Ta=75˚C –0.3 25˚C –0.1 –25˚C –0.03 –0.01 –0.003 –0.001 –0.01 –0.03 –0.1 –0.3 –1 –3 120 VCE=–2V 250 Ta=75˚C 200 25˚C –25˚C 150 100 50 0 –0.01 –0.03 –0.1 –0.3 –10 Collector output capacitance Cob (pF) –3 Cob — VCB 300 Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) –10 Collector current IC (A) –1 –3 f=1MHz IE=0 Ta=25˚C 100 80 60 40 20 0 –1 –10 Collector current IC (A) –3 –10 –30 –100 Collector to base voltage VCB (V) Characteristics charts of NPN transistor block PT — Ta IC — VCE IC — VBE 3.0 0.6 3.0 VCE=2V 0.4 0.3 0.2 2.5 IB=14mA 2.0 12mA 1.5 10mA 8mA 1.0 6mA 4mA 0.5 0.1 Collector current IC (A) 2.5 0.5 Collector current IC (A) Total power dissipation PT (W) Ta=25˚C 25˚C 2.0 Ta=75˚C –25˚C 1.5 1.0 0.5 2mA 0 0 20 40 60 0 0 80 100 120 140 160 2 VCE(sat) — IC Ta=75˚C 25˚C –25˚C 0.03 0.01 0.003 0.1 0.3 1 0 12 0.4 0.8 3 Collector current IC (A) 10 1.2 250 Ta=75˚C 200 25˚C –25˚C 100 50 0 0.01 0.03 2.0 2.4 Cob — VCB 60 150 1.6 Base to emitter voltage VBE (V) VCE=2V Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) 1 0.001 0.01 0.03 10 hFE — IC 3 0.1 8 300 IC/IB=30 0.3 6 Collector to emitter voltage VCE (V) Ambient temperature Ta (˚C) 10 4 Collector output capacitance Cob (pF) 0 f=1MHz IE=0 Ta=25˚C 50 40 30 20 10 0 0.1 0.3 1 3 Collector current IC (A) 10 1 3 10 30 100 Collector to base voltage VCB (V) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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