Transistor 2SD1991A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1320A Unit: mm 0.15 0.65 max. 14.5±0.5 ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 1.0 ● 0.85 ● 0.8 ■ Features 1.05 2.5±0.1 (1.45) ±0.05 0.8 4.0 3.5±0.1 6.9±0.1 0.7 +0.1 ■ Absolute Maximum Ratings 2.5±0.5 2.5±0.5 +0.1 (Ta=25˚C) 0.45–0.05 0.45–0.05 Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 7 V Peak collector current ICP 200 mA Collector current IC 100 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 2 3 2.5±0.1 1 Parameter Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT1 Type Package 1.2±0.1 0.65 max. 0.45+–0.1 0.05 (HW type) ■ Electrical Characteristics (Ta=25˚C) Parameter Symbol Collector cutoff current Conditions ICBO VCB = 20V, IE = 0 min typ max Unit 1 µA 1 µA ICEO VCE = 20V, IB = 0 Collector to base voltage VCBO IC = 10µA, IE = 0 60 V Collector to emitter voltage VCEO IC = 2mA, IB = 0 50 V Emitter to base voltage VEBO IE = 10µA, IC = 0 7 V * VCE = 10V, IC = 2mA 160 hFE2 VCE = 2V, IC = 100mA 90 Collector to emitter saturation voltage VCE(sat) IC = 100mA, IB = 10mA 0.1 Transition frequency fT VCB = 10V, IE = –2mA, f = 200MHz 150 MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 3.5 pF hFE1 Forward current transfer ratio *h FE1 460 0.3 V Rank classification Rank Q R S hFE1 160 ~ 260 210 ~ 340 290 ~ 460 1 Transistor 2SD1991A PC — Ta IC — VCE 1200 Ta=25˚C 300 200 100 1000 140µA 40 120µA 100µA 30 80µA 60µA 20 800 600 400 40µA 10 200 20µA 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 2 4 6 8 10 Collector to emitter saturation voltage VCE(sat) (V) VCE=10V Ta=25˚C 200 Collector current IC (mA) 160 120 25˚C –25˚C 80 40 160 120 80 40 0 0 0.4 0.8 1.2 1.6 2.0 0 Base to emitter voltage VBE (V) 200 400 600 1000 25˚C 300 –25˚C 200 100 0.3 1 3 10 10 3 1 0.3 25˚C 0.1 30 Collector current IC (mA) Ta=75˚C –25˚C 0.03 0.01 0.1 0.3 1 3 10 100 100 fT — I E 300 800 600 Ta=125˚C 75˚C 400 25˚C –25˚C 200 0 0.1 30 Collector current IC (mA) VCB=10V Ta=25˚C Transition frequency fT (MHz) Forward current transfer ratio hFE Ta=75˚C 1.0 IC/IB=10 VCE=5V 500 0.8 30 hFE — IC VCE=10V 0 0.1 800 1000 400 0.6 100 Base current IB (µA) hFE — IC 600 0.4 VCE(sat) — IC 240 VCE=10V 0 0.2 Base to emitter voltage VBE (V) IC — I B 200 Ta=75˚C 0 Collector to emitter voltage VCE (V) IC — VBE Collector current IC (mA) Base current IB (µA) 50 400 0 Forward current transfer ratio hFE VCE=10V Ta=25˚C IB=160µA 0 2 IB — VBE 60 Collector current IC (mA) Collector power dissipation PC (mW) 500 1 10 100 Collector current IC (mA) 1000 240 180 120 60 0 – 0.1 – 0.3 –1 –3 –10 –30 Emitter current IE (mA) –100 Transistor 2SD1991A Cob — VCB NV — IC 240 10 8 6 4 2 h Parameter — IC 100 VCE=10V Ta=25˚C Function=FLAT 200 VCE=5V f=270Hz 30 160 h Parameter IE=0 f=1MHz Ta=25˚C Noise voltage NV (mV) Collector output capacitance Cob (pF) 12 Rg=100kΩ 120 80 10 1 22kΩ 4.7kΩ 40 hfe (×100) 3 hoe (10–1µS) hre (×10–4) 0.3 hie (×10kΩ) 0 1 3 10 30 100 Collector to base voltage VCB (V) 0 10 30 100 300 Collector current IC (µA) 1000 0.1 0.1 0.3 1 3 10 Collector current IC (mA) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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