Composite Transistors XN01504 (XN1504) Silicon NPN epitaxial planer transistor Unit: mm For amplification of low frequency output +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SD1915F × 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 ■ Basic Part Number of Element 0.16 -0.06 +0.1 0.3 -0.05 0.95 +0.2 4 0.95 ● Two elements incorporated into one package. (Emitter-coupled transistors) Reduction of the mounting area and assembly cost by one half. 2.9 -0.05 ● 5 1.9±0.1 ■ Features 1.5 -0.05 ■ Absolute Maximum Ratings Parameter (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage Rating Emitter to base voltage of element Collector current VCEO 20 V VEBO 25 V 1 : Collector (Tr1) 2 : Collector (Tr2) 3 : Base (Tr2) IC 300 mA ICP 500 mA Total power dissipation PT 300 mW 5 Overall Junction temperature Tj 150 ˚C 4 Tstg –55 to +150 ˚C ■ Electrical Characteristics Parameter 0.4±0.2 4 : Emitter 5 : Base (Tr1) EIAJ : SC–74A Mini Type Pakage (5–pin) Marking Symbol: 5S Peak collector current Storage temperature 0.1 to 0.3 Internal Connection 3 Tr1 Tr2 1 2 (Ta=25˚C) Symbol Conditions min typ max VCEO IC = 1mA, IB = 0 Collector cutoff current ICBO VCB = 50V, IE = 0 0.1 µA Emitter cutoff current IEBO VEB = 25V, IC = 0 0.1 µA Forward current transfer ratio hFE VCE = 2V, IC = 4mA 500 Forward current transfer hFE ratio hFE (small/large)*1 VCE = 2V, IC = 4mA 0.5 Collector to emitter saturation voltage VCE(sat) IC = 30mA, IB = 3mA Base to emitter voltage VBE VCE = 2V, IC = 4mA 0.6 Transition frequency fT VCB = 6V, IE = –4mA, f = 200MHz 80 Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz ON Resistance Ron*2 *1 Ratio between 2 elements *2 Ron test circuit 20 Unit Collector to emitter voltage V 2500 0.99 0.1 V MHz 7 1.0 V pF Ω 1kΩ IB=1mA VB VV VA f=1kHz V=0.3V VB ✕1000(Ω) Ron= VA–VB Note.) The Part number in the Parenthesis shows conventional part number. 1 Composite Transistors XN01504 PT — Ta IC — VCE 500 IC — VBE 120 24 VCE=2V 200 100 0 IB=10µA 16 8µA 12 6µA 8 4µA 4 2µA 80 120 160 Ambient temperature Ta (˚C) 2 Ta=75˚C 25˚C –25˚C 10 100 Collector current IC (mA) Collector output capacitance Cob (pF) f=1MHz Ta=25˚C 16 12 8 4 0 10 10 0 12 0.2 100 Collector to base voltage VCB (V) 0.4 0.6 1600 Ta=75˚C 25˚C –25˚C 800 400 1 1.0 fT — I E 1200 0 0.1 0.8 Base to emitter voltage VBE (V) 200 10 Collector current IC (mA) Cob — VCB 1 8 VCB=6V Ta=25˚C VCE=2V Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) 0.1 20 6 hFE — IC 1 1 4 2000 IC/IB=10 0.001 0.1 40 Collector to emitter voltage VCE (V) VCE(sat) — IC 10 0.01 –25˚C 60 0 0 Transition frequency fT (MHz) 40 Ta=75˚C 80 20 0 0 2 Collector current IC (mA) 300 25˚C 100 20 400 Collector current IC (mA) Total power dissipation PT (mW) Ta=25˚C 100 160 120 80 40 0 –0.1 –1 –10 Emitter current IE (mA) –100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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