Composite Transistors XP01507 (XP1507) Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 High breakdown voltage and for low noise amplification 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 2SD0814(2SD814) × 2 elements 0 to 0.1 ● 0.7±0.1 ■ Basic Part Number of Element 0.12 – 0.02 0.2 ● Two elements incorporated into one package. (Emitter-coupled transistors) Reduction of the mounting area and assembly cost by one half. 2.0±0.1 ● 0.65 ■ Features 0.65 0.425 ■ Absolute Maximum Ratings Parameter (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 150 V Rating Collector to emitter voltage of Emitter to base voltage element Collector current VCEO 150 V VEBO 5 V 1 : Base (Tr1) 2 : Emitter 3 : Base (Tr2) 4 : Collector (Tr2) 5 : Collector (Tr1) EIAJ : SC–88A S–Mini Type Package (5–pin) Marking Symbol: 4O IC 50 mA Peak collector current ICP 100 mA Total power dissipation PT 150 mW 1 Overall Junction temperature Tj 150 ˚C 2 Tstg –55 to +150 ˚C Storage temperature Internal Connection 3 ■ Electrical Characteristics Parameter *1 0.2±0.1 Tr1 Tr2 5 4 (Ta=25˚C) Symbol Conditions min Collector to emitter voltage VCEO IC = 100µA, IB = 0 150 Emitter to base voltage VEBO IE = 10µA, IC = 0 5 Collector cutoff current ICBO VCB = 100V, IE = 0 typ max Unit V V 1 µA Forward current transfer ratio hFE VCE = 5V, IC = 10mA 90 Forward current transfer hFE ratio hFE (small/large)*1 VCE = 5V, IC = 10mA 0.5 450 Collector to emitter saturation voltage VCE(sat) IC = 30mA, IB = 3mA Transition frequency fT VCB = 10V, IE = –10mA, f = 200MHz 150 MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 2.3 pF 0.99 1 V Ratio between 2 elements Note.) The Part number in the Parenthesis shows conventional part number. 1 Composite Transistors XP01507 PT — Ta IC — VCE IC — VBE 120 250 120 100 150 100 50 60 0.6mA 0.4mA 40 0.2mA 20 20 40 60 2 VCE(sat) — IC 3 1 Ta=75˚C 0.1 –25˚C 0.03 1 0.3 3 10 30 100 Collector current IC (mA) Collector output capacitance Cob (pF) 5 f=1MHz IE=0 Ta=25˚C 4 3 2 1 0 2 3 5 10 20 30 50 100 Collector to base voltage VCB (V) 2 6 8 10 12 0 0.4 0.8 1.2 400 Ta=75˚C 25˚C 200 –25˚C 100 0 0.1 0.3 1 3 2.0 fT — I E 500 300 1.6 Base to emitter voltage VBE (V) 200 10 Collector current IC Cob — VCB 1 40 VCB=10V Ta=25˚C VCE=10V Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) 10 0.01 0.1 4 600 IC/IB=10 25˚C 60 hFE — IC 30 0.3 80 Collector to emitter voltage VCE (V) Ambient temperature Ta (˚C) 100 –25˚C 0 0 80 100 120 140 160 Transition frequency fT (MHz) 0 Ta=75˚C 20 0 0 25˚C 100 IB=2.0mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 80 VCE=10V Collector current IC (mA) 200 Collector current IC (mA) Total power dissipation PT (mW) Ta=25˚C 30 (mA) 100 160 120 80 40 0 –1 –2 –3 –5 –10 –20 –30 –50 Emitter current IE (mA) –100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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