AN11674 A Ku band quad LNB reference design based on TFF1044HN Rev. 1 — 17 July 2015 Application note Document information Info Content Keywords TFF1044, BFU910F, Quad LNB, DVB-S, Ku band to L-band Down Converter, FIMOD IC, Ku Band Abstract This application note describes a reference design based on TFF1044HN and BFU910, including the design details and the test results. AN11674 NXP Semiconductors Application Note Revision history Rev Date Description 1 First publication 20150717 AN11674 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 2 of 46 AN11674 NXP Semiconductors Application Note 1. Introduction NXP Semiconductors developed two new products for the Satellite LNB market, a fully integrated Quad Down-Converter IC (TFF1044HN) and an Ultra-Low Noise Bipolar transistor in SiGe technology (BFU910F). With these products the currently discrete Quad LNB market can be addressed with following benefits: - design time reduction - PCB size reduction - decreased costs of ownership, alignment free concept To support the Quad LNB market a reference design was implemented in NXP, which is called the NXP Quad in this document. The performance targets and followed approach can be found in this Application Note. Also actual performance, bill of materials, mechanical drawings and artwork files are given in this document to enable a head start for new integrated Quad designs! 2. The NXP Quad Figure 1 The NXP QUad 2.1 Product definition Before starting the integrated reference LNB design a feasibility study was done. The market to address was investigated and electrical as well as mechanical targets were set, as listed in the sections below. AN11674 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 3 of 46 AN11674 NXP Semiconductors Application Note 2.2 Approach As some electrical performance parameters can be defined differently, and uncertainty on the reference planes may arise, a “benchmark” discrete Quad LNB (called benchmark LNB in this document) was bought from the market. This was done in order to make a performance comparison with NXP Quad Ref. LNB on the main performance parameters. Also the benchmark LNB as well as the NXP Quad were put on a dish antenna and the received live signal quality were measured to compare the final performance. 2.3 Functional requirements The Quad LNB has two orthogonal mode inputs, implemented in Ku band circular waveguide. The two RF input signals are amplified by two cascaded LNA stages and are mixed down from Ku to L-band by 9.75 GHz and 10.6 GHz LO’s. On the four available IF outputs, implemented in F-type connectors, each RF polarization as well as band can be accessed. The Quad Ref. LNB has internal regulators and can be fed from either one or multiple IF’s over the coaxial cable, by applying bias Tees inside the Quad Ref. LNB. Figure 2 Block diagram for integrated Quad LNB Apart from the TFF1044 four LNA stages, four linear regulators, four diodes, one 25 MHz crystal and some passives are required. AN11674 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 4 of 46 AN11674 NXP Semiconductors Application Note 2.4 Electrical requirements The electrical requirements are mostly operator dictated, for NXP Quad Ref. LNB the Astra specifications were taken as reference. These are listed in the table below. Table 1 Target specification Parameter Value Unit Low Band 10.70 to 11.70 GHz High Band 11.70 to 12.75 GHz Low Band 950 to 1950 MHz High Band 1100 to 2150 MHz Low Band 9750 MHz High Band 10600 MHz RMS Phase Jitter 2.5 (max.) ˚ Conversion Gain 60 (typ.) dB Gain Ripple 5 (max.) dB Low Band 1.1 (typ.) dB High Band 1.3 (typ.) dB Input Frequency Output Frequency Local Oscillator Frequency Noise Figure 3rd Order Intermodulation Offset less than ±1MHz Integrated from 10kHz to 13MHz over complete low or high band Comparable with benchmark LNB 10 (min.) dBm Output Return Loss (75 Ω) 8 (min.) dB Cross Polar Rejection 20 (min.) dB In-band Spurious -60 (max.) dBm One IF-port on 180 mA All IF-ports on 250 mA Current Consumption Comments Comparable with benchmark LNB 2.5 Mechanical requirements Discrete quad LNB usually employs two PCBs and the PCB size is much bigger. For example, the benchmark LNB has two PCB with the total size of 4500mm2 (65*45mm and 35*45mm respectively). The Quad Ref. LNB should be built with a single (Rogers) PCB. The size should be as small as possible, however mechanical dimensions are linked to the minimum space between the IF (F-type) connectors. Minimum spacing of those, in order to enable access to the four IF cables, is 16 mm. The final PCB size is decided as 2000mm2 (50mm long and 40mm wide) and is nearly 45% of the total PCB size of the benchmark LNB. The Quad Ref LNB will be equipped with a flange (circular waveguide diameter 17.6 mm), a feed-horn with flange will be supplied but customers can use their own feed-horn design by un-screwing this. AN11674 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 5 of 46 AN11674 NXP Semiconductors Application Note 2.6 The NXP Quad, design considerations Given the required overall conversion gain the choice for two cascaded LNA stages (per polarization) is dictated. First LNA stage chosen is a common used Pseudomrphic High Electron Mobility Transistor (pHEMT) for excellent NF. Second stage is NXP Bipolar Junction Transistor (BJT) BFU910F, this transistor has approximately 1.5 dB more gain compared to typical pHEMT devices, which compensates nicely for the NFmin. (See also section 5.1.1) TFF1044 provides bias for both the first stage and the second stage. The first stage is for pHEMT with adjustable bias current. The second stage is selectable between pHEMT and BJT also with adjustable bias current. NXP BJT’s like BFU910F have a supply current advantage over pHEMT devices of approximately 3mA per LNA. Band-pass filters were applied to increase the overall image rejection (3 section hairpin filters). With this filters an average image rejection at PCB level of 46 dB is realized. The supply topology chosen is to use four linear regulators (6 Volt), one per IF path, and combining their outputs by simple diodes. The PCB design target to minimize the PCB size with the premise of good RF performance and safe IF connector clearance. (See also section 5.4). 3. The NXP Quad, measurement results 3.1 Parametric results, main parameters This is an overview of the typical values measured for the main parameters by comparison with that of the benchmark LNB. For more detailed results please see section 7. Table 2 Measured performance of the NXP Quad vs the benchmark LNB Parameters NXP Quad Benchmark Requirements LNB Unit Low Band 0.1 0.3 High Band 0.1 0.3 RMS Phase Jitter 1.4 0.2 2.5 (max.) Conversion Gain 60 60 60 (typ.) dB Gain Ripple 3 3 5 (max.) dB Low Band 1.0[1] 1.0 1.1 (typ.) dB High Band 1.0[1] 1.1 1.3 (typ.) dB OIP3 12 10 10 (min.) dBm Cross Polar Rejection 25 28 20 (min.) dB LO accuracy Noise Figure In-band Spurious Current Consumption ±1.0 (max.) MHz MHz ˚ -65 -60 -60 (max.) dBm One IF-port on 159 153 180 (max.) mA All IF-ports on 214 213 250 (max.) mA [1] : Noise Figure measured in one polarization, shows the potential of the concept. AN11674 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 6 of 46 AN11674 NXP Semiconductors Application Note 3.2 Measurement results live signal Quality Measured parameters on modulated signals were the signal strength, Carrier to Noise Ratio (C/N), Modulation Error Rate (MER) and for the 8-PSK signals the Link Margin (LKM). In the results one cannot differentiate the NXP Quad from the benchmark LNB’s. For detailed results see section 6.8. 3.3 Conclusions The Quad LNB reference design has shown to be competitive compared to benchmark LNB’s. The benefits for OEM’s / ODM’s are clearly in the PCB size reduction, design time reduction and costs of ownership. This reference design can also serve as a starting point for derivatives for alternative Quad / Quattro / IP LNB markets. 4. Key-components, product description 4.1 TFF1044HN TFF1044HN is an integrated down-converter for use in universal quad and quattro Low Noise Block (LNB) convertors in 10.70 GHz to 12.75 GHz Ku band satellite receiver systems. The device incorporates required mixers, Local Oscillators (LO), Intermediate Frequency (IF) amplifier stages, IF switch matrix, Voltage and Tone detection for polarity and band switching and pHEMT bias control for a pair of two-stage-LNA (as shown in Figure 3). It can be used to create an alignment free product with two RF inputs and four IF outputs and enables PCB size reduction. Figure 3 TFF1044 block diagram AN11674 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 7 of 46 AN11674 NXP Semiconductors Application Note Apart from the TFF1044, only a few external components, including the LNA stages, a 25 MHz crystal, voltage regulator(s), two diode-pairs and some passive circuitry is required to complete a quad LNB. The number of components is significantly reduced compared to discretely build quad/quattro LNB’s. The TFF1044HN offers some degree of flexibility for ease of application, through the use of its control pins. The settings of these pins are introduced in this section so that readers can be easier to understand the design consideration which is described in Section 5.1. • POL_SWAP / MODE_SEL: This pin serves as polarization swap selection pin to enable PCB routing with optimum (none crossing) Ku band RF tracks. The vertical and horizontal polarizations are assigned to the RF path A and RF path B inputs according to Table 1. The setting for quattro mode operation is also given in the same table. Table 1 Polarity swap / mode selection settings Connection of POL_SWAP/MODE_SEL (Pin 30) Mode GND Polarity RF A (pin 35) RF B (pin 11) quad horizontal vertical Float quad vertical horizontal GND via 100 kΩ pull-down resistor quattro N/A N/A • GAIN_SET: This pin provides a three levels adjustable gain. TFF1044 has selectable gain states in order to have freedom to vary the overall LNB gain. The conversion gain can be set to 30dB, 33dB or 36dB by the external connection of GAIN_SET pin, which is shown in Table 2. Table 2 Conversion gain settings Connection of GAIN_SET (Pin 16) Gain Mode Typical Conversion Gain GND low 30 dB Float medium 33 dB GND via 100 kΩ pull-down resistor high 36 dB The gain of the TFF1044HN quad LNB with two-stage LNA is typically 55 to 61dB by different gain setting. For even higher conversion gain, the 3rd stage of LNA has to be employed. • 2AB_TYPSEL: This pin enables different biasing schemes for the second stage LNA depending on the preferred technology, BJT or pHEMT. TFF1044 leaves the flexibility of different transistor type of the 2nd stage LNA to the user, and Table 3 presents how to set it by 2AB_TYPSEL pin. AN11674 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 8 of 46 AN11674 NXP Semiconductors Application Note Table 3 Second stage LNA type selection settings Connection of 2AB_TYPSEL (Pin 5) Type of the 2nd stage of LNA RF path A RF path B GND pHEMT pHEMT Float BJT BJT • 1AB_ISET / 2AB_ISET: These pins set the current of the 1st and the 2nd stage of LNA respectively. The parameters spread of the LNA transistors, whether pHEMT or BJT, depends on the current of the Drain (of pHEMT) or Collector (of BJT). So it is more stable to use a current source instead of voltage source to supply the transistor. TFF1044HN is capable of providing such current sources for the transistors as the 1st and 2nd stages of the LNAs for both polarities. TFF1044HN allows the user to set the current of the 1st and 2nd stage separately. The typical drain current of pHEMT is 10mA, and correspondingly, a 22kΩ pull-down resistor should be connected to 1AB_ISET /2AB_ISET. While the typical current of BFU910F is 6-7mA, and the corresponding resistor at 2AB_ISET is 33kΩ. 4.2 BFU910F BFU910F is an NPN silicon germanium Radio Frequency (RF) BJT for high speed, low noise applications in a plastic, four-pin dual-emitter SOT343F package. BFU910F has the characterization of low NF and high gain. At 12GHz, The minimum noise figure (NFmin) is 0.65 dB and the maximum stable gain (MSG) is 14.2 dB. In Ku band application, BFU910F is usually biased at 2V/7 mA. Compared with pHEMT, BFU910 has the merits of lower current, no negative voltage needed, higher gain, easier for wide-band matching. In the quad LNB reference design, BFU910F is used as the second stage LNA. Although its individual NFmin is slightly higher than some pHMET, the higher gain of BFU910F makes the overall NF even better. AN11674 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 9 of 46 AN11674 NXP Semiconductors Application Note 5. Design 5.1 General Consideration 5.1.1 Gain and NF simulation The ADS schematic of the Front End (FE) of the NXP Quad is given in Figure 4. The FE includes two stages of LNA, a Circular Waveguide (CWG) with input matching, intermediate stage matching and output circuits (output matching, Band Pass Filter (BPF) and 50Ω transmission-line). NE3503M04 and BFU910F are employed as the 1st and 2nd stage LNA respectively. The Circular Waveguide (CWG) is used as the input interface, and the parameters of the CWG with input matching circuits is extracted and stored in the S4P model in the schematic in Figure 4. The models of the intermediate matching and the output circuits of the FE are simulated by Momentum. Based on the simulation of the FE, which is shown in Figure 5, the overall gain and NF of the LNB (FE+TFF1044HN) is calculated and shown in Figure 6. Figure 4 FE circuits for ADS schematic simulation AN11674 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 10 of 46 AN11674 NXP Semiconductors Application Note Figure 5 FE Gain and NF simulation: NF is 0.730dB at 10.7GHz and 0.703dB at 12.75GHz Gain is 23.616dB at 10.7GHz and 21.731dB at 12.75GHz Figure 6 Simulated Gain & NF of the whole LNB: The NF is 0.82dB and the Gain is 58.4dB AN11674 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 11 of 46 AN11674 NXP Semiconductors Application Note 5.1.2 TFF1044 configuration Regarding to the configuration of the NXP Quad: 1) High gain mode: Gain_SET (pin 16) is pull-down by a 100kΩ resistor 2) BJT (BFU910) as the 2nd stage of LNA: 2AB_TYPSEL (pin 5) is left floating 3) RFA as vertical polarity and RFB as horizontal polarity: POL_SWAP/MODE_SEL (Pin 30) is left floating 4) The bias of the 1st stage is 2V/10mA: 1AB_ISET (pin 3) is pulled-down by a 22kΩ resistor 5) The bias of the 2nd stage is 2V/7mA: 2AB_ISET (pin 7) is pulled-down by a 33kΩ resistor f The detailed schematic and BOM are given in Section 5.2 and Section 5.3 respectively. 5.1.3 PCB and mechanical parts In traditional discrete quad LNB, two PCBs are usually employed because the RF crossing traces are inevitable with single PCB layout. But it is not a problem anymore in TFF1044HN based quad LNB. In the NXP Quad, single PCB solution is employed and the PCB size has been designed as small as possible: The length of the PCB is determined by the safe distance between the F-type connectors. Any neighboring F-type connectors must be placed at least 16mm far from each other to avoid conflicts. The minimum PCB length is 50mm: three times of the minimum safe distance plus the pads dimensions. The width of the PCB is determined by the geometric dimension of the distribution circuits (FEs and IF transmission lines) and safe distance between the IF transmission lines. The minimum PCB width is 40mm. The PCB layout is presented in Section 5.4, and related assembly drawing is in Section 5.5. The LNB has a Circular Waveguide (CWG) input interface so that the LNB can be tested both in lab and on dish. The precision of the waveguide significantly impacts the RF performance of the LNB, and its dimension is described in Section 5.6. AN11674 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 12 of 46 H C2 10nF C1 10nF R2 1k R1 1k U2 NE3503 U1 NE3503 C4 10nF C3 10nF C39 1pF C6 1pF R4 10 R3 10 C38 1pF C8 10nF R6 1k U3 BFU910 R5 1k U4 BFU910 Y1 25MHz C10 10nF C9 10nF R10 10 R9 33k R8 22k R7 10 35 1B_DRAIN 1B_GATE 2AB_ISET XON 2AB_TY PSEL XOP 1AB_ISET 1A_GATE 1A_DRAIN 10.7-12.75GHz 9 8 7 6 5 4 3 2 1 U5 TFF1044 10.7-12.75GHz 31 2A_GATE C5 1pF C7 10nF 2 1 34 A_RFIN 36 A_RFGND B_RFGND 10 A_RFIN B_RFIN 11 33 13 B_RFIN 12 32 A_RFGND B_RFGND 14 2A_DRAIN 2B_DRAIN 29 GNDIF1 GNDIF4 28 IFOUT1 IFOUT4 30 16 2B_GATE 15 POL_SWAP/MODE_SEL GAIN_SET Rev. 1 — 17 July 2015 R12 100k 17 All information provided in this document is subject to legal disclaimers. 18 L1 47nH C12 4.7pF VTIF4 VTIF3 IFOUT3 GNDIF3 VCC GNDIF2 IFOUT2 VTIF2 VTIF1 19 20 21 22 23 24 25 26 C34 0.5pF R14 330 R16 330 C15 4.7pF C14 1uF C13 4.7pF R15 330 R13 330 C11 4.7pF 27 C37 0.5pF L4 47nH C35 0.5pF L2 47nH L3 47nH C36 0.5pF C19 27pF Q1 BAV74 CPWG CPWGX 78S06 C25 0.22uF VOUT U7 VOUT 78S06 VIN VIN 78S06 U9 C26 100nF C24 100nF VOUT U8 C23 100nF C22 27pF VIN Q2 BAV74 C21 27pF C20 27pF CPWGX C18 27pF CPWGX C17 27pF 78S06 VOUT GND U6 GND Application note GND AN11674 GND C16 100nF VIN C33 12pF C29 0.22uF C32 12pF C28 0.22uF C27 0.22uF C31 22pF C30 22pF CH4 CH3 CH2 CH1 NXP Semiconductors AN11674 Application Note 5.2 Schematic Figure 7 Schematic of NXP Quad © NXP Semiconductors N.V. 2015. All rights reserved. 13 of 46 V AN11674 NXP Semiconductors Application Note 5.3 BOM Table 4 Bill of material AN11674 Application note Designator Description Footprint Qty Value Supplier Name/type U1,U2 HJFET SOT343 2 Renesas-NE3503M04 U3,U4 SiGe BJT SOT343 2 NXP-BFU910F U5 FIMOD SOT1359-1 1 NXP -TFF1044HN U6,U7,U8,U9 Regulator SOT-89 4 Silicore-78S06M Q1,Q2 CC-Diodes SOT-23 2 NXP-BAV74 C1, C2, C3, C4, C7, C8, C9, C10 Capacitor 0402 8 10nF Murata-GRM155R71H103K C5, C6, C38, C39 Capacitor 0402 4 1pF Murata-GJM1555C1H1R0C C11, C12, C13, C15 Capacitor 0402 4 4.7pF Murata-GRM1555C1H4R7C C14 Capacitor 0402 1 1uF Murata-GRM155R61A105K C34, C35, C36, C37 Capacitor 0402 4 0.5pF Murata-GRM1555C1HR50B C16, C23, C24, C26 Capacitor 0402 4 0.1uF Murata-GRM155R71C104K C17, C18, C19, C20, C21, C22 Capacitor 0402 6 27pF Murata-GRM1555C1H270J C25, C27, C28, C29 Capacitor 0603 4 0.22uF Murata-GRM188R71E224K C30, C31, C32, C33 Capacitor 0402 4 22pF Murata-GRM1555C1H220J R1,R2,R5,R6 Resistor 0402 4 1kΩ PSA-WR04X1001FTL R3, R4, R7, R10 Resistor 0402 4 10Ω PSA-WR04X10R0FTL R8 Resistor 0402 1 22kΩ PSA-WR04X2202FTL R9 Resistor 0402 1 33kΩ PSA-WR04X3302FTL R12 Resistor 0402 1 100kΩ PSA-WR04X1003FTL R13, R14, R15, R16 Resistor 0402 4 330 PSA-WR04X3300FTL L1,L2,L3,L4 Inductor 0402 4 47nH LQW15AN47NG Y1 Crystal HC-49XA 1 25MHz JFVNY-HC-49XA-C16TTA-25.000MHz DYNAMIC-DMS2500016 All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 14 of 46 AN11674 NXP Semiconductors Application Note 5.4 PCB layout Figure 8 PCB layout AN11674 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 15 of 46 AN11674 NXP Semiconductors Application Note 5.5 Assembly Figure 9 Assembly drawing AN11674 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 16 of 46 AN11674 NXP Semiconductors Application Note 5.6 Mechanical drawing The mechanical drawings of the base, cove short stick and probes are presented in Figure 10 to Figure 12. The alignment of the probes is very important to the NF of the LNB. A fixture is made to assemble the probes precisely, which is shown in Figure 13. The assembly view of NXP Quad is given in Figure 14. Figure 10 Mechanical drawing: Base AN11674 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 17 of 46 AN11674 NXP Semiconductors Application Note Figure 11 Mechanical drawing: cover AN11674 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 18 of 46 AN11674 NXP Semiconductors Application Note Figure 12 Mechanical drawing: short stick & probes AN11674 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 19 of 46 AN11674 NXP Semiconductors Application Note Figure 13 Mechanical drawing: Fixture AN11674 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 20 of 46 AN11674 NXP Semiconductors Application Note Figure 14 Mechanical drawing: assembly AN11674 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 21 of 46 AN11674 NXP Semiconductors Application Note 6. Test Results The NXP Quad is tested in lab for RF performance and on dish for signal quality. The electric test results are given in Section 6.1 to Section 6.7, while the signal quality test results are given in Section 6.8. 6.1 Noise Figure The NF test setup is shown in Figure 15. The NF is tested by Rhode & Schwarz FSU spectrum analyzer with an Agilent 346A noise source. An Orthogonal Mode Transducer (OMT) is used as the adaptor between the coaxial connector and the waveguide. The loss of the OMT, which is used in the NF test calibration is given in Figure 16. Since the conversion gain of the DUT is about 60dB, the noise contribution of the spectrum analyzer receiver is negligible. So the Second Stage Corrected function is switched off in this test. When one IF port is under test, all the other ports are switched off to avoid the impacts due to cross talk and cross polar. For LNB based on any Fully Integrated Mixer Oscillator Down-converter (FIMOD) IC, the harmonic of the crystal can be looked as extra noise. Different from the thermal noise, this interference is not white noise but a single spectrum. So how it impacts the system Signal Noise Ratio (SNR) is different. To evaluate the physical SNR degradation in DVBS signal receiving system with the NXP Quad, the Resolution Band Width (RBW) is set 10MHz, which is as close to typical symbol rate of a real system as possible. The NF of NXP Quad is typically 1.1dB, and independent on which IF port is under test as shown in Figure 17. Figure 18 compares the NF of the NXP Quad and the benchmark LNB. Both LNBs are measured under the same test condition, and their NF are comparable. AN11674 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 22 of 46 AN11674 NXP Semiconductors Application Note Figure 15 NF test setup Figure 16 The loss of the OMT AN11674 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 23 of 46 AN11674 NXP Semiconductors Application Note Figure 17 NF test results The NF is typically 1.0-1.2dB Figure 18 Noise Figure comparison NXP Quad vs. Benchmark LNB The NF of the NXP Quad and the benchmark LNB are comparable AN11674 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 24 of 46 AN11674 NXP Semiconductors Application Note 6.2 Conversion gain The conversion gain test setup is shown in Figure 19. A Rhode & Schwarz Vector Network Analyzer (VNA) ZVA 24 with frequency conversion option is used in the test. The Power sensor is used for source and receiver power calibration. In conversion gain test, all the ports which are not under test are switched off. Figure 20 to Figure 23 depict the conversion gain plots of the NXP Quad at both polarities and both bands. In all plots, M1 marks the maximum gain while M2 marks the minimum gain. The conversion gain is in the range of 60±3dB. In all conditions, the gain flatness is typically 2-3dB. Figure 19 Conversion gain test setup AN11674 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 25 of 46 AN11674 NXP Semiconductors Application Note Figure 20 The conversion gain of vertical polarity & low band is 58-62dB The gain ripple in each IF channel is 3dB max. Figure 21 The conversion gain of horizontal polarity & low band is 59-61dB The gain ripple in each IF channel is 2dB max. AN11674 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 26 of 46 AN11674 NXP Semiconductors Application Note Figure 22 The conversion gain of vertical polarity & high band is 58-61dB The gain ripple in each IF channel is 3dB max. Figure 23 The conversion gain of horizontal polarity & high band is 57-59dB The gain ripple in each IF channel is 2dB max. AN11674 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 27 of 46 AN11674 NXP Semiconductors Application Note 6.3 The third order Output Intercept Point (OIP3) The OIP3 test setup is shown in Figure 24. Rhode & Schwarz Vector Network Analyzer (VNA) ZVA 24 with frequency conversion and intermodulation test option is used in the test. In addition, a power combiner are used to combine the two tones generated by Port 1 and Port 3 of the VNA, and two isolators are inserted between the power combiner arms and the ports of the VNA to avoid the unwanted IM3 components generated by the instrument itself. The interval between of two tones is 10MHz, Measurement bandwidth is 200 kHz, and the calibrated input power of each tone is -70dBm. When any port is under test, all the other ports are switched off. The OIP3 plots for low band and high band are given in Figure 25 and Figure 26 respectively. Figure 24 OIP3 test setup AN11674 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 28 of 46 AN11674 NXP Semiconductors Application Note Figure 25 The OIP3 of low band is 11dBm (min.) and 12dBm (typ.) Figure 26 The OIP3 of high band is at least 10dBm (min.) and 12dBm (typ.) AN11674 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 29 of 46 AN11674 NXP Semiconductors Application Note 6.4 RMS phase jitter The RMS phase jitter test setup is shown in Figure 27. A CW signal with very good phase noise is generated by Rhode & Schwarz SMF100A signal generator and injected into the LNB input. The phase jitter is measured at the IF ports by Rhode & Schwarz spectrum analyzer FSU. The input CW signal is 11.6875GHz for low band and 12.7375GHz for high band. And the output level is -35dBm. The detailed phase jitter test setup for FIMOD IC is described in NXP’s application note AN11139. Since all IF ports of the NXP Quad LNB use the same LO for low band or high band, only one IF port is selected for the LO RMS phase jitter test. All the other IF ports which are not under test are switched off. The test results are given in Figure 28 and Figure 29 for 9.75GHz and 10.6GHz LO. The RMS phase jitter of these two LO are 1.3°and 1.4°respectively. Figure 27 RMS phase jitter test setup AN11674 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 30 of 46 AN11674 NXP Semiconductors Application Note Figure 28 The RMS phase jitter of 9.75GHz LO is 1.3° Figure 29 The RMS phase jitter of 10.6GHz LO is 1.4° AN11674 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 31 of 46 AN11674 NXP Semiconductors Application Note 6.5 Cross polar The test setup for conversion gain, which is shown in Figure 19, can be used for cross polar test as well. The signal from different polarity comes in by two ways: 1) The RF coupling in the waveguide, RF chains and RF internal coupling; 2) The IF coupling in the switch matrix, IF transmission lines, and IF internal coupling. As a smart function of TFF1044HN, when all the IF ports are set as the same polarity, the bias of the LNA of the other polarity is switched off to save power consumption. So in order to obtain the cross polar in the worst case, when one IF port is under test, all the other ports are switched on and set to the other polarity but kept the identical band setting, as shown in Table 5. Table 5 --- Cross Polar test setting Test Port Polarity Vertical 1,2,3,4 Horizontal Band The other IF ports Power Low High Low Polarity Horizontal ON High Vertical Band Low High Low High The process of cross polar test is: Step 1: Run conversion gain test, including power calibration. Step 2: Store the conversion gain to memory, generate Curve A. Step 3: Connect the input cable to the other polarity of the OMT. Step 4: Measure the conversion gain from the other polarity, generate Curve B. Step 5: Generate the cross polar curve by <Curve A/Curve B>. The test results of the NXP Quad at both polarities and both bands are given in Figure 30 to Figure 33. Even in the worst case, the cross polar is better than 20dB. AN11674 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 32 of 46 AN11674 NXP Semiconductors Application Note Figure 30 The Cross Polar of vertical polarity & low band is 24dB (min.) Figure 31 The Cross Polar of horizontal polarity & low band is 22dB (min.) AN11674 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 33 of 46 AN11674 NXP Semiconductors Application Note Figure 32 The Cross Polar of vertical polarity & high band is 25dB (min.) Figure 33 The Cross Polar of horizontal polarity & high band is 25dB (min.) AN11674 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 34 of 46 AN11674 NXP Semiconductors Application Note 6.6 Spurious The major spurious of any quad LNB is at 850MHz (out of IF band) and 1700MHz (in band), which are the 2nd and 4rd intermodulation products of 9.75GHz and 10.6GHz LO. The spurious test setup is shown in Figure 34. The input of the LNB under test is terminated by the OMT and 50Ω loads to block the interference from the free space. A Rhode & Schwarz spectrum analyzer FSU is used to measure the level of 850MHz and 1700MHz spurious. The loss of the bias Tee and IF cable has been measured and subtracted in the final results. The status of the other IF ports effect on the spurious level under test. The test settings are listed in Table 6. The spurious at 850MHz and 1700MHz of the NXP Quad is given in Figure 35 and Figure 36 respectively. The abbreviation PV, PH, LB, HB in the legend stand for vertical polarity, horizontal polarity, low band and high band setting of the IF port under test respectively. While the abbreviation OF, VL, VH, HL, HH in the table under horizontal axis stand for switched off, vertical polarity and low band, vertical polarity and high band, horizontal polarity and low band, horizontal polarity and high band respectively. According to the test results, when the port is horizontal polarized and low band, the 850MHz spurious is about -14dBm. For the other settings, the spurious is better than 22dBm. For most setting, the 1700MHz is lower than -60dBm. The worst case is -54dBm. The 1700MHz spurious level obviously depends on the status of the other IF ports. Figure 34 Spurious test setup AN11674 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 35 of 46 AN11674 NXP Semiconductors Application Note Table 6 850MHz and 1700MHz measurement setting Test Port Polarity Band Low The other IF ports Power Polarity OFF N/A Vertical ON Horizontal Vertical OFF High N/A Vertical ON Horizontal 1,2,3,4 OFF Low N/A Vertical ON Horizontal Horizontal OFF High N/A Vertical ON Horizontal AN11674 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 July 2015 Band N/A Low High Low High N/A Low High Low High N/A Low High Low High N/A Low High Low High © NXP Semiconductors N.V. 2015. All rights reserved. 36 of 46 AN11674 NXP Semiconductors Application Note Test Port IF Port 1 IF Port 2 IF Port 3 IF Port 4 Figure 35 Spurious at 850MHz is -23dBm (typ.) and -14dBm (max.) Test IF Port 1 IF Port 2 IF Port 3 IF Port 4 Port Figure 36 Spurious at 1700MHz is -65dBm (typ.) and -54dBm (max.) AN11674 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 37 of 46 AN11674 NXP Semiconductors Application Note 6.7 Summary on electrical specification Table 7 Electrical test summary NXP Quad Parameter Supply Current LO Frequency Conversion Gain Min. Typ. RMS Phase Jitter[3] OIP3 Min. Typ. 159 153 2 IF ON[2] 199 174 ON[2] 216 193 4 IF ON[2] 234 213 Low Band 9749.9 9750.3 High Band 10599.9 10599.7 3 IF Max. MHz 58 60 62 59 61 66 High Band 57 59 61 59 61 63 2.3 3.4 3.1 5.1 Low Band 1.1 1.2 1.0 1.2 High Band 1.1 1.2 1.1 1.3 Low Band 1.3 0.2 High Band 1.4 0.2 Low Band 11 12 8 10 High Band 10 12 9 12 22 25 22 28 Unit mA Low Band Cross Polar Rejection Spurious Max. 1 IF ON[1] Gain Ripple Noise Figure Benchmark LNB dB dB dB ° dBm dB 850MHz -23 -14 -41 -23 1700MHz -65 -54 -60 -46 dBm [1] Only one polarity is selected; [2] Both polarities are selected. [3] Integrated from 10kHz to 13MHz. AN11674 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 38 of 46 AN11674 NXP Semiconductors Application Note 6.8 Signal quality in live signal receiving The NXP Quad is mounted on an Andrew 120cm dish antenna to receive the signal from satellite of Astra 19.2E, and the Signal strength, Modulation Error Ratio (MER), Carrier Noise Ratio, Link Margin (LKM, only available in case of DVB-S2)) are measured by Rhode & Schwarz DVB-S / DVB-S2 tester. A 20 meters length coaxial cable (approximately 15dB attenuation) is used to connect the LNB and the tester. The test setup is pictured in Figure 37 (A short cable is employed only for demonstration). The signal quality of the benchmark LNB is measured as well as the NXP Quad, and the results are compared in Figure 38 to Figure 43. The abbreviation of LB/HB, 1 - 4, V/H, S2 in the legend of these plots stand for low/high band, IF port number, vertical/horizontal polarity, DVB-S2 respectively. Figure 38 and Figure 39 depict the C/N of the received signal from vertical and horizontal polarity respectively. The C/N of the received signal by the benchmark LNB and the NXP Quad are on the same level. Figure 40 and Figure 41 depict the MER of the demodulated signal from vertical and horizontal polarity respectively. The MER of the received signal by the benchmark LNB and NXP Quad are close to each other. Figure 42 and Figure 43 depict the LKM of the DVB-S2 signal (8-PSK modulation) from the vertical and horizontal polarity respectively. The LKM results by the benchmark LNB and the NXP Quad are comparable as well. In general, the NXP Quad LNB has the comparable signal quality with the benchmark LNB. Figure 37 Live signal test setup AN11674 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 39 of 46 AN11674 NXP Semiconductors Application Note Figure 38 C/N in live signal receiving at vertical polarity The CN of NXP Quad and the Benchmark LNB are comparable Figure 39 C/N in live signal receiving at horizontal polarity The CN of NXP Quad and the Benchmark LNB are comparable AN11674 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 40 of 46 AN11674 NXP Semiconductors Application Note Figure 40 MER in live signal receiving at vertical polarity The MER of NXP Quad and the Benchmark LNB are comparable Figure 41 MER in live signal receiving at horizontal polarity The MER of NXP Quad and the Benchmark LNB are comparable AN11674 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 41 of 46 AN11674 NXP Semiconductors Application Note Figure 42 LKM in live signal receiving at vertical polarity The LKM of NXP Quad and the Benchmark LNB are comparable Figure 43 LKM in live signal receiving at horizontal polarity The LKM of NXP Quad and the Benchmark LNB are comparable AN11674 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 42 of 46 AN11674 NXP Semiconductors Application Note 7. Conclusions A Quad LNB reference design based on BFU910F and TFF1044HN has been described in this document. The detailed design including the schematic, BOM, PCB layout, assembly drawing and mechanical drawing are presented. According to the electric test results summarized in Section 6, the performance of the reference is comparable with the benchmark LNB in commercial market. AN11674 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 43 of 46 AN11674 NXP Semiconductors Application Note 8. Legal information 8.1 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 8.2 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Evaluation products — This product is provided on an “as is” and “with all faults” basis for evaluation purposes only. NXP Semiconductors, its affiliates and their suppliers expressly disclaim all warranties, whether express, implied or statutory, including but not limited to the implied warranties of noninfringement, merchantability and fitness for a particular purpose. The entire risk as to the quality, or arising out of the use or performance, of this product remains with customer. In no event shall NXP Semiconductors, its affiliates or their suppliers be liable to customer for any special, indirect, consequential, punitive or incidental damages (including without limitation damages for loss of business, business interruption, loss of use, loss of data or information, and the like) arising out the use of or inability to use the product, whether or not based on tort (including negligence), strict liability, breach of contract, breach of warranty or any other theory, even if advised of the possibility of such damages. Notwithstanding any damages that customer might incur for any reason whatsoever (including without limitation, all damages referenced above and all direct or general damages), the entire liability of NXP Semiconductors, its affiliates and their suppliers and customer’s exclusive remedy for all of the foregoing shall be limited to actual damages incurred by customer based on reasonable reliance up to the greater of the amount actually paid by customer for the product or five dollars (US$5.00). The foregoing limitations, exclusions and disclaimers shall apply to the maximum extent permitted by applicable law, even if any remedy fails of its essential purpose. 8.3 Licenses Purchase of NXP <xxx> components <License statement text> 8.4 Patents Notice is herewith given that the subject device uses one or more of the following patents and that each of these patents may have corresponding patents in other jurisdictions. <Patent ID> — owned by <Company name> 8.5 Trademarks Notice: All referenced brands, product names, service names and trademarks are property of their respective owners. <Name> — is a trademark of NXP Semiconductors N.V. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the AN11674 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 July 2015 © NXP Semiconductors N.V. 20154. All rights reserved. 44 of 46 AN11674 NXP Semiconductors Application Note 9. ist of figures Figure 1 The NXP QUad ..................................................... 3 Figure 2 Block diagram for integrated Quad LNB ............... 4 Figure 3 TFF1044 block diagram ........................................ 7 Figure 4 FE circuits for ADS schematic simulation ........... 10 Figure 5 FE Gain and NF simulation: ................................ 11 Figure 6 Simulated Gain & NF of the whole LNB: ............. 11 Figure 7 Schematic of NXP Quad ..................................... 13 Figure 8 PCB layout .......................................................... 15 Figure 9 Assembly drawing ............................................... 16 Figure 10 Mechanical drawing: Base ................................ 17 Figure 11 Mechanical drawing: cover ............................... 18 Figure 12 Mechanical drawing: short stick & probes ......... 19 Figure 13 Mechanical drawing: Fixture ............................. 20 Figure 14 Mechanical drawing: assembly ......................... 21 Figure 15 NF test setup .................................................... 23 Figure 16 The loss of the OMT ......................................... 23 Figure 17 NF test results................................................... 24 Figure 18 Noise Figure comparison NXP Quad vs. Benchmark LNB .............................................. 24 Figure 19 Conversion gain test setup ............................... 25 Figure 20 The conversion gain of vertical polarity & low band is 58-62dB .............................................. 26 Figure 21 The conversion gain of horizontal polarity & low band is 59-61dB .............................................. 26 Figure 22 The conversion gain of vertical polarity & high band is 58-61dB .............................................. 27 Figure 23 The conversion gain of horizontal polarity & high band is 57-59dB .............................................. 27 Figure 24 OIP3 test setup ................................................. 28 AN11674 Application note Figure 25 The OIP3 of low band is 11dBm (min.) and 12dBm (typ.)....................................................29 Figure 26 The OIP3 of high band is at least 10dBm (min.) and 12dBm (typ.) .............................................29 Figure 27 RMS phase jitter test setup ...............................30 Figure 28 The RMS phase jitter of 9.75GHz LO is 1.3° ..31 Figure 29 The RMS phase jitter of 10.6GHz LO is 1.4° ..31 Figure 30 The Cross Polar of vertical polarity & low band is 24dB (min.)......................................................33 Figure 31 The Cross Polar of horizontal polarity & low band is 22dB (min.) ..................................................33 Figure 32 The Cross Polar of vertical polarity & high band is 25dB (min.)......................................................34 Figure 33 The Cross Polar of horizontal polarity & high band is 25dB (min.) .........................................34 Figure 34 Spurious test setup ...........................................35 Figure 35 Spurious at 850MHz is -23dBm (typ.) and 14dBm (max.) ..................................................37 Figure 36 Spurious at 1700MHz is -65dBm (typ.) and 54dBm (max.) ..................................................37 Figure 37 Live signal test setup ........................................39 Figure 38 C/N in live signal receiving at vertical polarity ...40 Figure 39 C/N in live signal receiving at horizontal polarity ........................................................................40 Figure 40 MER in live signal receiving at vertical polarity .41 Figure 41 MER in live signal receiving at horizontal polarity ........................................................................41 Figure 42 LKM in live signal receiving at vertical polarity ..42 Figure 43 LKM in live signal receiving at horizontal polarity ........................................................................42 All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 45 of 46 AN11674 NXP Semiconductors Application Note 10. Contents 1. 2. 2.1 2.2 2.3 2.4 2.5 2.6 3. 3.1 3.2 3.3 4. 4.1 4.2 5. 5.1 5.1.1 5.1.2 5.1.3 5.2 5.3 5.4 5.5 5.6 6. 6.1 6.2 6.3 6.4 6.5 6.6 6.7 6.8 7. 8. 8.1 8.2 8.3 8.4 8.5 9. 10. Introduction ......................................................... 3 The NXP Quad ..................................................... 3 Product definition ............................................... 3 Approach ............................................................ 4 Functional requirements ..................................... 4 Electrical requirements ....................................... 5 Mechanical requirements ................................... 5 The NXP Quad, design considerations .............. 6 The NXP Quad, measurement results ............... 6 Parametric results, main parameters ................. 6 Measurement results live signal Quality ............. 7 Conclusions........................................................ 7 Key-components, product description .............. 7 TFF1044HN ....................................................... 7 BFU910F ............................................................ 9 Design ................................................................ 10 General Consideration ..................................... 10 Gain and NF simulation .................................... 10 TFF1044 configuration ..................................... 12 PCB and mechanical parts ............................... 12 Schematic ........................................................ 13 BOM ................................................................. 14 PCB layout ....................................................... 15 Assembly.......................................................... 16 Mechanical drawing ......................................... 17 Test Results ....................................................... 22 Noise Figure ..................................................... 22 Conversion gain ............................................... 25 The third order Output Intercept Point (OIP3) .. 28 RMS phase jitter ............................................... 30 Cross polar ....................................................... 32 Spurious ........................................................... 35 Summary on electrical specification ................. 38 Signal quality in live signal receiving ................ 39 Conclusions ....................................................... 43 Legal information .............................................. 44 Definitions ........................................................ 44 Disclaimers....................................................... 44 Licenses ........................................................... 44 Patents ............................................................. 44 Trademarks ...................................................... 44 ist of figures ....................................................... 45 Contents ............................................................. 46 Please be aware that important notices concerning this document and the product(s) described herein, have been included in the section 'Legal information'. © NXP Semiconductors N.V. 2015. All rights reserved. For more information, visit: http://www.nxp.com Date of release: 17 July 2015 Document identifier: AN11674