BFU910F
NPN wideband silicon germanium RF transistor
Rev. 2 — 16 January 2015
Product data sheet
1. Product profile
1.1 General description
NPN silicon germanium RF transistor for high speed, low noise applications in a plastic,
4-pin dual-emitter SOT343F package.
The BFU910F is suitable for small signal applications up to 20 GHz.
1.2 Features and benefits
Low noise high gain microwave transistor
Minimum noise figure (NFmin) = 0.65 dB at 12 GHz
Maximum stable gain 14.2 dB at 12 GHz
90 GHz fT SiGe technology
1.3 Applications
Ku band DBS Low-Noise blocks
1.4 Quick reference data
Table 1.
Quick reference data
Tamb = 25 C unless otherwise specified
Symbol Parameter
VCE
collector-emitter voltage
IC
collector current
Conditions
Min Typ
Max Unit
RBE 1 M
-
2.0
3.0
V
-
10
15
mA
-
-
300
mW
Ptot
total power dissipation
Tsp 90 C
[1]
hFE
DC current gain
IC = 6 mA; VCE = 2 V
-
1900 -
CCBS
collector-base capacitance
VCB = 2 V; f = 1 MHz
-
35
-
fF
fT
transition frequency
IC = 6 mA; VCE = 2 V
-
90
-
GHz
MSG
maximum stable gain
IC = 6 mA; VCE = 2 V;
f = 12 GHz
-
14.2
-
dB
NFmin
minimum noise figure
IC = 6 mA; VCE = 2 V;
f = 12 GHz; S = opt
-
0.65
-
dB
Gass
associated gain
IC = 6 mA; VCE = 2 V;
f = 12 GHz; S = opt
-
13.0
-
dB
PL(1dB)
output power at 1 dB
gain compression
IC = 10 mA; VCE = 2 V;
f = 12 GHz; ZS = ZL = 50
-
2
-
dBm
[1]
Tsp is the temperature at the solder point of the emitter lead.
BFU910F
NXP Semiconductors
NPN wideband silicon germanium RF transistor
2. Pinning information
Table 2.
Discrete pinning
Pin
Description
1
emitter
2
base
3
emitter
4
collector
Simplified outline
Graphic symbol
PEE
3. Ordering information
Table 3.
Ordering information
Type number Package
BFU910F
Name Description
Version
-
SOT343F
plastic surface-mounted flat pack package; reverse pinning;
4 leads
4. Marking
Table 4.
Marking
Type number
Marking
Description
BFU910F
F1*
* = t : made in Malaysia
* = w : made in China
5. Design support
Table 5.
Available design support
Download from the BFU910F product information page on http://www.nxp.com.
Support item
BFU910F
Product data sheet
Available
Remarks
Device models for Agilent EEsof EDA ADS
Q1 2015
Based on Mextram device model.
SPICE model
Q1 2015
Based on Gummel-Poon device
model.
S-parameters
yes
Noise parameters
yes
Solder pattern
yes
Application notes
yes
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 16 January 2015
© NXP B.V. 2015. All rights reserved.
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BFU910F
NXP Semiconductors
NPN wideband silicon germanium RF transistor
6. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min Max
Unit
VCB
collector-base voltage
open emitter
-
9.5
V
VCE
collector-emitter voltage
open base
-
2.0
V
shorted base
-
9.5
V
open collector
-
1.5
V
VEB
emitter-base voltage
Tstg
storage temperature
65 +150
C
7. Recommended operating conditions
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCE
collector-emitter voltage
RBE 1 M
-
2.0
3.0
V
VEB
emitter-base voltage
open collector
-
-
1.0
V
IC
collector current
-
-
15
mA
ZS = 50
Pi
input power
Tj
junction temperature
Ptot
total power dissipation
[1]
Tsp 90 C
[1]
-
-
0
dBm
40
-
+150
C
-
-
300
mW
Tsp is the temperature at the solder point of the emitter lead.
8. Thermal characteristics
BFU910F
Product data sheet
Table 8.
Thermal characteristics
Symbol
Parameter
Rth(j-sp)
thermal resistance from junction to solder point
Conditions
[1][2]
Typ
Unit
202
K/W
[1]
Tsp is the temperature at the solder point of the collector lead.
Tsp has the following relation to the ambient temperature Tamb: Tsp = Tamb + P Rth(sp-amb)
with P the power dissipation and Rth(sp-amb) the thermal resistance between the solder point and ambient.
Rth(sp-amb) is determined by the heat transfer properties in the application.
The heat transfer properties are set by the application board materials, the board layout and the
environment e.g. housing.
[2]
Based on simulation.
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 16 January 2015
© NXP B.V. 2015. All rights reserved.
3 of 11
BFU910F
NXP Semiconductors
NPN wideband silicon germanium RF transistor
DDD
3WRW
P:
Fig 1.
7VS&
Power derating curve
9. Characteristics
Table 9.
Characteristics
Tamb = 25 C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V(BR)CBO collector-base breakdown voltage
IC = 10 A; IE = 0 A
9.5
-
-
V
V(BR)CEO collector-emitter breakdown voltage
IC = 10 A; IB = 0 A
2.0
-
-
V
15
mA
IC
collector current
hFE
DC current gain
-
6
IC = 1.5 mA; VCE = 1.5 V
1200
2200 3300
IC = 6 mA; VCE = 2 V
-
1900 -
CCES
collector-emitter capacitance
VCE = 2 V; f = 1 MHz
-
215
-
fF
CEBS
emitter-base capacitance
VEB = 0.5 V; f = 1 MHz
-
300
-
fF
CCBS
collector-base capacitance
VCB = 2 V; f = 1 MHz
-
35
-
fF
fT
transition frequency
IC = 5 mA; VCE = 2 V
-
90
-
GHz
MSG
maximum stable gain
f = 10.7 GHz; VCE = 2 V
IC = 6 mA
-
15.2
-
dB
IC = 10 mA
-
15.5
-
dB
IC = 6 mA
-
14.2
-
dB
IC = 10 mA
-
14.5
-
dB
IC = 6 mA
-
14.2
-
dB
IC = 10 mA
-
14.5
-
dB
f = 12 GHz; VCE = 2 V
f = 12.75 GHz; VCE = 2 V
BFU910F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 16 January 2015
© NXP B.V. 2015. All rights reserved.
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BFU910F
NXP Semiconductors
NPN wideband silicon germanium RF transistor
Table 9.
Characteristics …continued
Tamb = 25 C unless otherwise specified
Symbol
Parameter
Conditions
s212
Min
Typ
Max
Unit
insertion power gain
f = 10.7 GHz; VCE = 2 V
IC = 6 mA
-
13.0
-
dB
IC = 10 mA
-
13.5
-
dB
IC = 6 mA
-
12.0
-
dB
IC = 10 mA
-
12.5
-
dB
IC = 6 mA
-
12.0
-
dB
IC = 10 mA
-
12.5
-
dB
IC = 6 mA
-
0.6
-
dB
IC = 10 mA
-
0.65
-
dB
IC = 6 mA
-
0.65
0.85
dB
IC = 10 mA
-
0.7
-
dB
IC = 6 mA
-
0.65
-
dB
IC = 10 mA
-
0.7
-
dB
IC = 6 mA
-
13.5
-
dB
IC = 10 mA
-
14.0
-
dB
IC = 6 mA
-
13.0
-
dB
IC = 10 mA
-
13.5
-
dB
IC = 6 mA
-
13.0
-
dB
IC = 10 mA
f = 12 GHz; VCE = 2 V
f = 12.75 GHz; VCE = 2 V
NFmin
f = 10.7 GHz; VCE = 2 V; S = opt
minimum noise figure
f = 12 GHz; VCE = 2 V; S = opt
f = 12.75 GHz; VCE = 2 V; S = opt
Gass
f = 10.7 GHz; VCE = 2 V; S = opt
associated gain
f = 12 GHz; VCE = 2 V; S = opt
f = 12.75 GHz; VCE = 2 V; S = opt
-
13.5
-
dB
PL(1dB)
output power at 1 dB gain compression
f = 12 GHz; VCE = 2 V; ZS = ZL = 50 ;
IC = 10 mA
-
2
-
dBm
IP3o
output third-order intercept point
f1 = 12.000 GHz; f2 = 12.025 GHz;
VCE = 2 V; ZS = ZL = 50 ; IC = 10 mA
-
12.5
-
dBm
BFU910F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 16 January 2015
© NXP B.V. 2015. All rights reserved.
5 of 11
BFU910F
NXP Semiconductors
NPN wideband silicon germanium RF transistor
9.1 Graphs
DDD
1)PLQ
G%
*DVV
G%
*DVV
DDD
1)PLQ
G%
1)PLQ
,&P$
f = 12 GHz; VCE = 2 V; Tamb = 25 C.
Fig 2.
*DVV
G%
*DVV
1)PLQ
I*+]
IC = 6 mA; VCE = 2 V; Tamb = 25 C.
Minimum noise figure and associated gain as
function of collector current; typical values
DDD
1)PLQ
G%
Fig 3.
Minimum noise figure and associated gain as
function of frequency; typical values
DDD
+)(
I*+]
VCE = 2 V; Tamb = 25 C.
,&P$
VCE = 2 V; Tamb = 25 C.
(1) IC = 6 mA
(2) IC = 10 mA
Fig 4.
Minimum noise figure as a function of
frequency; typical values
BFU910F
Product data sheet
Fig 5.
DC current gain as a function of collector
current; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 16 January 2015
© NXP B.V. 2015. All rights reserved.
6 of 11
BFU910F
NXP Semiconductors
NPN wideband silicon germanium RF transistor
10. Package outline
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Package outline SOT343F
BFU910F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 16 January 2015
© NXP B.V. 2015. All rights reserved.
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BFU910F
NXP Semiconductors
NPN wideband silicon germanium RF transistor
11. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
12. Abbreviations
Table 10.
Abbreviations
Acronym
Description
DBS
Direct Broadcast Satellite
Ku band
K-under band
NPN
Negative-Positive-Negative
SiGe
Silicon Germanium
13. Revision history
Table 11.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BFU910F v.2
20150116
Product data sheet
-
BFU910F v.1
Modifications
BFU910F v.1
BFU910F
Product data sheet
•
•
•
•
•
•
•
•
The status of this document has been changed to “Product data sheet”.
The title has been changed to “NPN wideband silicon germanium RF transistor”.
Section 1.1 on page 1: the wording of this section has been changed.
Table 1 on page 1: Some changes have been made.
Table 6 on page 3: The maximum value for VCE,open base has been changed.
Table 7 on page 3: The typical value for VCE has been changed.
Table 9 on page 4: the conditions for V(BR)CBO and V(BR)CEO have been changed.
Figure 5 on page 6: the figure has been added.
20141128
Preliminary data sheet
-
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 16 January 2015
-
© NXP B.V. 2015. All rights reserved.
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BFU910F
NXP Semiconductors
NPN wideband silicon germanium RF transistor
14. Legal information
14.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
14.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
14.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
BFU910F
Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 16 January 2015
© NXP B.V. 2015. All rights reserved.
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BFU910F
NXP Semiconductors
NPN wideband silicon germanium RF transistor
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
14.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
15. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BFU910F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 16 January 2015
© NXP B.V. 2015. All rights reserved.
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BFU910F
NXP Semiconductors
NPN wideband silicon germanium RF transistor
16. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
9.1
10
11
12
13
14
14.1
14.2
14.3
14.4
15
16
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Design support . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Recommended operating conditions. . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Handling information. . . . . . . . . . . . . . . . . . . . . 8
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Contact information. . . . . . . . . . . . . . . . . . . . . 10
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2015.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 16 January 2015
Document identifier: BFU910F