PANASONIC XP1554

Composite Transistors
XP1554
Silicon NPN epitaxial planer transistor
Unit: mm
0.2±0.05
For high speed switching
2.1±0.1
2.0±0.1
2
5
3
4
0.9± 0.1
■ Basic Part Number of Element
2SC3757 × 2 elements
0 to 0.1
●
0.7±0.1
+0.05
●
1
0.425
■ Absolute Maximum Ratings
Parameter
1 : Base (Tr1)
2 : Emitter
3 : Base (Tr2)
(Ta=25˚C)
Symbol
Ratings
Unit
Collector to base voltage
VCBO
40
V
Collector to emitter voltage
VCES
40
V
Rating
Emitter to base voltage
of
element Collector current
Marking Symbol: EU
5
V
IC
100
mA
Peak collector current
ICP
300
mA
1
Total power dissipation
PT
150
mW
2
Overall Junction temperature
Tj
150
˚C
Tstg
–55 to +150
˚C
■ Electrical Characteristics
Parameter
0.2±0.1
4 : Collector (Tr2)
5 : Collector (Tr1)
EIAJ : SC–88A
S–Mini Type Package (5–pin)
VEBO
Storage temperature
0.12 – 0.02
●
Two elements incorporated into one package.
(Emitter-coupled transistors)
Reduction of the mounting area and assembly cost by one half.
Low VCE(sat).
1.25±0.1
0.2
●
0.65
■ Features
0.65
0.425
Internal Connection
3
Tr1
Tr2
5
4
(Ta=25˚C)
Symbol
Conditions
min
typ
max
Unit
Collector cutoff current
ICBO
VCB = 15V, IE = 0
0.1
µA
Emitter cutoff current
IEBO
VEB = 4V, IC = 0
0.1
µA
Forward current transfer ratio
hFE
VCE = 1V, IC = 10mA
Collector to emitter saturation voltage
VCE(sat)
IC = 10mA, IB = 1mA
60
200
Base to emitter saturation voltage
VBE(sat)
IC = 10mA, IB = 1mA
Transition frequency
fT
VCB = 10V, IE = –10mA, f = 200MHz
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
Turn-on time
ton
17
Turn-off time
toff
17
ns
Storage time
tstg
10
ns
0.17
0.25
1.0
450
2
V
V
MHz
6
pF
ns
1
Composite Transistors
XP1554
ton, toff Test Circuit
Total power dissipation PT (mW)
90%
VCC=10V
50Ω
Vbb=2V
0
Vin
10%
Vout
10%
10%
Vin
10%
Vout
Vin=10V
VCC=3V
Vbb=
–3V
Vin
90Ω
500Ω
3.3kΩ
50Ω
1kΩ
910Ω
0.1µF 500Ω
220Ω
50Ω
Vout
A
Vout
3.3kΩ
200
0.1µF
0.1µF
Vin=10V
PT — Ta
tstg Test Circuit
90%
Vout
ton
tstg
toff
180
160
140
120
100
80
60
40
20
(Wave form at A)
0
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (˚C)
IC — VCE
VCE(sat) — IC
2.5mA
80
2.0mA
1.5mA
60
1.0mA
40
0.5mA
20
0
0.2
0.4
0.6
0.8
1.0
30
10
3
1
Ta=75˚C
1.2
25˚C
0.3
–25˚C
0.1
0.03
0.01
0.1
0
IC/IB=10
1
3
10
400
300
Ta=75˚C
25˚C
–25˚C
1
3
10
Collector current IC
3
Ta=–25˚C
25˚C
75˚C
1
0.3
0.1
0.03
1
100
10
3
30
(mA)
100
400
300
200
100
–3
–10
–30
–100 –300 –1000
Emitter current IE
100
300
1000
Cob — VCB
500
0
–1
30
Collector current IC (mA)
6
VCB=10V
Ta=25˚C
Transition frequency fT (MHz)
500
0.3
10
fT — IE
VCE=1V
Forward current transfer ratio hFE
30
600
100
30
0.01
0.3
hFE — IC
600
200
IC/IB=10
Collector current IC (mA)
Collector to emitter voltage VCE (V)
0
0.1
Base to emitter saturation voltage VBE(sat) (V)
IB=3.0mA
100
(mA)
Collector output capacitance Cob (pF)
Collector current IC (mA)
100
Collector to emitter saturation voltage VCE(sat) (V)
Ta=25˚C
2
VBE(sat) — IC
100
120
f=1MHz
IE=0
Ta=25˚C
5
4
3
2
1
0
1
3
10
30
100
Collector to base voltage VCB (V)