SENSITRON________ _ SEMICONDUCTOR SDA1006S TECHNICAL DATA DATA SHEET 5434, REV. A Diode Array Devices Are Serialized Built And Screened To Space Level Quality Space Quality Level Conformance Testing Is Performed On Each Lot Each diode similar to JANS1N5615 MAX. RATINGS / ELECTRICAL CHARACTERISTICS FOR EACH DIODE O All rating at are TA = 25 C unless otherwise specified RATING Peak Inverse Voltage (DC) Average DC Output Current Per Diode TA = 55oC TA = 100oC Peak Single Cycle Surge Current (1) (TP=8.3ms single half-Sine wave) Steady State Power Dissipation per Package (2) Max. Operating Junction Temperature Max. Operating Ambient Temperature Storage Temperature Range Maximum forward voltage @ 3.0A Tp = 300µs; 2% duty cycle Maximum Instantaneous Reverse Current At Rated (PIV) Max. Reverse Recovery Time IF =0.5 A, IR= 1.0A, IRR =0.25A Max. Capacitance f= 1MHz, VR = 12V Thermal Resistance Junction to Case Note: SYMBOL MAX UNIT PIV 200 V IO 1 0.75 A IFSM 10 A PT 1000 mW TJ -55 to +150 o -30 to 100 o TSTG -65 to +175 o Vf 1.6 V TA= 25oC TA = 100oC 0.5 25 A trr 150 ns CT 45 pF JC 21 TOP C C C o C/W (1) Each diode 0 0 (2) Derate at 8mW/ C above 25 C ©2014 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected] SENSITRON________ _ SEMICONDUCTOR SDA1006S TECHNICAL DATA DATA SHEET 5434, REV. A Mechanical Outline Electrical Schematic DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. ©2014 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected]