PANASONIC MTM232230LBF

Doc No. TT4-EA-12901
Revision. 3
Product Standards
MOS FET
MTM232230LBF
MTM232230LBF
Silicon N-channel MOS FET
Unit : mm
For switching
2.0
0.3
 Features
0.15
3
1.25
2.1
 Low drain-source On-state resistance : RDS(on) typ = 20 m  (VGS = 4.0 V)
 Low drive voltage: 2.5 V drive
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)
1
2
 Marking Symbol : BK
0.9
(0.65)(0.65)
1.3
 Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
1.
2.
3.
 Absolute Maximum Ratings Ta = 25 C
項目
記号
Drain-source Voltage
Gate-source Voltage
Drain current
Peak drain current *1
Power dissipation *2
Channel temperature
Operating ambient temperature
Storage Temperature Range
Note)
VDS
VGS
ID
IDp
PD
Tch
Topr
Tstg
定格
20
10
4.5
18
500
150
-40 to + 85
-55 to +150
単位
V
A
A
mW
C
C
C
Panasonic
JEITA
Code
Gate
Source
Drain
SMini3-G1-B
SC-70
SOT-323
Internal Connection
(D)
3
*1 Pulse width ≦10 s, Duty cycle ≦1 %
*2 Measuring on ceramic board at 40  38  0.1 mm
Absolute maximum rating PD without heat sink shall be made 150 mW.
1
(G)
2
(S)
Pin Name
1.
2.
3.
Gate
Source
Drain
Page 1 of 6
Established : 2010-12-15
Revised
: 2013-07-01
Doc No. TT4-EA-12901
Revision. 3
Product Standards
MOS FET
MTM232230LBF
 Electrical Characteristics Ta = 25 C  3 C
項目
記号
Drain-source surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Gate threshold voltage
条件
ID = 1 mA, VGS = 0 V
VDS = 20 V, VGS = 0 V
VGS = 8 V, VDS = 0 V
ID = 1.0 mA, VDS = 10.0 V
RDS(ON)1 ID = 1 A, VGS = 4 V
Drain-source ON resistance *1
RDS(ON)2 ID = 0.6 A, VGS = 2.5 V
ID = 1 A, VDS = 10 V, f = 1 kHz
|Yfs|
Forward transfer admittance *1
Short-circuit input capacitance (Common source)
Ciss
Short-circuit output capacitance (Common source)
VDS = 10 V, VGS = 0, f = 1 MHz
Coss
Reverse transfer capacitance (Common source)
Crss
VDD = 10 V, VGS = 0 to 4 V
ton
Turn-on Time *2
ID = 1 A
VDD
= 10 V, VGS = 4 to 0 V
toff
Turn-off Time *2
ID = 1 A
Note)
VDSS
IDSS
IGSS
Vth
最小 標準 最大
20
0.4
0.85
20
26
3.5
1.0
10
1.3
28
40
単位
V
A
A
V
m
S
1 200
85
80
pF
16
ns
220
ns
1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
2. *1 Pulse test : Pulse width < 300 s、Duty cycle < 2 %
*2 Turn-on and Turn-off test circuit
Page 2 of 6
Established : 2010-12-15
Revised
: 2013-07-01
Doc No. TT4-EA-12901
Revision. 3
Product Standards
MOS FET
MTM232230LBF
*2 Turn-on and Turn-off test circuit
VDD = 10 V
ID = 1 A
RL = 10 
Vin
4V
0V
Vout
PW = 10 μs
D.C. ≦ 1 %
D
G
Vin
50 
S
90 %
Vin
10 %
90 %
Vout
10 %
t(on)
t(off)
Page 3 of 6
Established : 2010-12-15
Revised
: 2013-07-01
Doc No. TT4-EA-12901
Revision. 3
Product Standards
MOS FET
MTM232230LBF
Technical Data ( reference )
ID - VDS
ID - VGS
0.08
4.5
4.0 V
3.5
0.07
2.5 V
Drain current ID (A)
Drain current ID (A)
4
3
2.0 V
2.5
2
VGS = 1.5 V
1.5
1
0.5
Ta = 85 ℃
0.06
0.05
25 ℃
0.04
0.03
-40 ℃
0.02
0.01
1.0 V
0
0
0
0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4
0
0.5
Drain-source Voltage VDS (V)
RDS(on) - ID
100
0.5
Drain source On-state Resistance
RDS(on) (m)
Drain-source Voltage VDS (V)
1.5
Gate-source voltage VGS (V)
VDS - VGS
0.4
ID = 2 A
0.3
0.5 A
0.2
1A
0.1
0
0
1
2
3
4
5
2.5 V
VGS = 4.0 V
10
0.01
0.1
1
10
Drain current ID (A)
Gate-source Voltage VGS (V)
Dynamic Input/Output Characteristics
Capacitance - VDS
10
Gate-source Voltage VGS (V)
10000
Capacitance C (pF)
1
Ciss
1000
Coss
100
Crss
8
VDD = 10 V
6
4
2
0
10
0.1
1
Drain-source Voltage VDS (V)
10
0
5
10
15
20
25
30
Total Gate Charge Qg (nC)
Page 4 of 6
Established : 2010-12-15
Revised
: 2013-07-01
Doc No. TT4-EA-12901
Revision. 3
Product Standards
MOS FET
MTM232230LBF
Technical Data ( reference )
Vth - Ta
RDS(on) - Ta
50
Drain-source On-resistance
RDS(on) (m)
Gate-source Threshold Voltage (V)
1.5
1
0.5
VGS = 2.5 V
40
30
4.0 V
20
10
0
0
-50
0
50
100
-50
150
0
50
100
150
Temperature (℃)
Temperature Ta (℃)
Total Power Dissipation PD (W)
PD - Ta
0.8
Mounted on ceramic board
(40 x 38 x t0.1 mm)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
50
100
150
Temperature Ta (C)
Safe Operating Area
100
1000
IDp = 18 A
Drain Current ID (A)
Thermal Resistance Rth (C/W)
Rth - tsw
100
10
10
1
1 ms
0.1
0.01
10 ms
Operation in this area
is limited by RDS(on)
100 ms
1s
Ta = 25C,
Glass epoxy board (25.4×25.4×t0.8 mm)
coated with copper foil,
DC
which has more than 300mm2.
1
0.01
0.1
1
10
Pulse Width tsw (s)
100
1000
0.001
0.01
0.1
1
10
100
Drain-source Voltage VDS (V)
Page 5 of 6
Established : 2010-12-15
Revised
: 2013-07-01
Doc No. TT4-EA-12901
Revision. 3
Product Standards
MOS FET
MTM232230LBF
SMini3-G1-B
2.0±0.2
+0.10
0.15-0.05
+0.1
0.3 0.0
(8°)
2
1.3±0.1
0.2±0.1
(0.65) (0.65)
(0.425)
1
2.1±0.1
1.25±0.10
3
+0.2
0.9-0.1
0 to 0.1
0.9±0.1
(10°)
 Land Pattern (Reference) (Unit : mm)
1.9
0.8
0.9
1.3
Page 6 of 6
Established : 2010-12-15
Revised
: 2013-07-01
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for general applications (such as office equipment, communications
equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book.
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment,
life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of
the products may directly jeopardize life or harm the human body.
It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with
your using the products described in this book for any special application, unless our company agrees to your using the products in
this book for any special application.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.
20100202