PANASONIC DSK5J01

This product complies with the RoHS Directive (EU 2002/95/EC).
DSK5J01
Silicon N-channel Junction FET
For low frequency amplification
For pyroelectric sensor
 Features
 Package
 High gate-drain voltage (source open) VGDO
 Contributes to miniaturization of sets, reduction of component count.
 Eco-friendly Halogen-free package

Code
SMini3-F2-B

Pin Name
1: Source
2: Drain
3: Gate
 Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
 Marking Symbol: B6
 Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
VGDS
–55
V
Drain current
ID
30
mA
Gate current
IG
10
mA
Power dissipation
PD
150
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Gate-drain breakdown voltage
 Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Gate-drain breakdown voltage
VGDS
IG = –100 mA, VDS = 0
–55
Drain-source cutoff current *
IDSS
VDS = 10 V, VGS = 0
1.0
Gate-source cutoff current
IGSS
Gate-source cutoff voltage
Forward transfer admittance
Typ
Max
Unit
V
12.0
mA
VGS = –30 V, VDS = 0
–10
nA
VGSC
VDS = 10 V, ID = 10 mA
–5
V
Yfs
VDS = 10 V, ID = 5 mA, f = 1 MHz
Short-circuit input capacitance (Common source)
Ciss
Reverse transfer capacitance (Common source)
Crss
VDS = 10 V, VGS = 0, f = 1 MHz
2.5
7.5
mS
6.0
pF
2.5
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Code
P
Q
R
Rank
P
Q
R
IDSS
1.0 to 3.0
2.0 to 6.5
5.0 to 12.0
Marking Symbol
B6P
B6Q
B6R
Publication date: November 2010
Ver. AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
DSK5J01
DSK9J01_ ID-VGS
DSK9J01_ ID-VDS
ID  VDS
8
4
DSK5J01_ PD-Ta
ID  VGS
PD  Ta
200
Ta = 25°C
VGS = 0 V
2
− 0.2 V
− 0.4 V
1
6
Power dissipation PD (mW)
3
Drain current ID (mA)
Drain current ID (mA)
VDS = 10 V
−30°C
25°C
4
Ta = 85°C
2
150
100
50
− 0.6 V
0
0
4
8
0
−1.5
12
Drain-source voltage VDS (V)
Gate-source voltage VGS (V)
DSK9J01_Ciss , Crss , Coss -VDS
DSK9J01_|Yfs|-ID
10
Crss
6
Coss
4
2
0
0
5
10
15
Drain-source voltage VDS (V)
2
20
Ta = 25°C
VDS = 10 V
10
1
10−1 −2
10
10−1
1
Drain current ID (mA)
Ver. AED
0
0
40
80
120
Ambient temperature Ta (°C)
Yfs  ID
Ta = 25°C
Ciss
0.5
102
Forward transfer admittance |Yfs | (mS)
Short-circuit input capacitance (Common source) Ciss ,
Reverse transfer capacitance (Common source) Crss ,
Short-circuit output capacitance (Common source) Coss (pF)
Ciss , Crss , Coss  VDS
8
0
− 0.5
−1.0
10
160
This product complies with the RoHS Directive (EU 2002/95/EC).
DSK5J01
SMini3-F2-B
Unit: mm
2.00 ±0.20
+0.05
0.30 −0.02
1
0.425 ±0.05
(5°)
2.10 ±0.10
1.25 ±0.10
3
2
(0.65)
(0.65)
+0.05
0.13 −0.02
(0.49)
1.30 ±0.10
0 to 0.10
0.90 ±0.10
(5°)
Ver. AED
3
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semiconductors described in this book
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
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