DMN2400UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage UItra-Small Surface Mount Package Ultra-Low Package Profile, 0.4mm Maximum Package Height Lead Free By Design/RoHS Compliant (Note 1) ESD Protected up to 1.5kV "Green" Device (Note 2) Qualified to AEC-Q101 standards for High Reliability • • • • Case: DFN1006H4-3 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: Collector Dot Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.001 grams (approximate) DFN1006H4-3 Drain S D Gate G ESD PROTECTED TO 1.5kV BOTTOM VIEW TOP VIEW Package Pin Configuration Gate Protection Diode Source EQUIVALENT CIRCUIT Ordering Information (Note 3) Part Number DMN2400UFB4-7 Notes: Case DFN1006H4-3 Packaging 3000/Tape & Reel 1. No purposefully added lead. 2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information NC DMN2400UFB4 Document number: DS32025 Rev. 3 - 2 NC = Product Type Marking Code Dot Denotes Drain Side 1 of 6 www.diodes.com October 2010 © Diodes Incorporated DMN2400UFB4 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 4) VGS = 4.5V Steady State Symbol VDSS VGSS Value 20 ±12 Units V V ID 0.75 0.55 A IDM 3 A TA = 25°C TA = 85°C Pulsed Drain Current (Notes 4 & 5) Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Symbol PD RθJA TJ, TSTG Value 0.47 258 -55 to +150 Units mW °C/W °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS IGSS 20 - - 100 ±1.0 ±50 V nA μA μA VGS = 0V, ID = 250μA VDS = 20V, VGS = 0V VGS = ±4.5V, VDS = 0V VGS = ±10V, VDS = 0V VGS(th) RDS (ON) 1.0 0.7 0.9 0.55 0.75 0.9 1.2 V Static Drain-Source On-Resistance 0.5 - VDS = VGS, ID = 250μA VGS = 4.5V, ID = 600mA VGS = 2.5V, ID = 500mA VGS = 1.8V, ID = 350mA VDS = 10V, ID = 400mA VGS = 0V, IS = 150mA - 36.0 5.7 4.2 0.5 0.07 0.1 4.11 3.82 14.8 9.6 - Forward Transfer Admittance Diode Forward Voltage (Note 6) DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: |Yfs| VSD Ciss Coss Crss Qg Qgs Qgd tD(on) tr tD(off) tf Ω S V pF pF pF nC nC nC ns ns ns ns Test Condition VDS =16V, VGS = 0V, f = 1.0MHz VGS =4.5V, VDS = 10V, ID =250mA VDD = 10V, VGS = 4.5V, RL = 47Ω, RG = 10Ω, ID = 200mA 4. Device mounted on FR-4 PCB, with minimum recommended pad layout, single sided. 5. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. DMN2400UFB4 Document number: DS32025 Rev. 3 - 2 2 of 6 www.diodes.com October 2010 © Diodes Incorporated DMN2400UFB4 1.5 2.0 VGS = 4.5V VDS = 5V 1.5 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 2.5V VGS = 2.0V VGS = 1.8V 1.0 0.5 VGS = 1.5V 1.0 0.5 T A = 150°C TA = 125°C T A = 85°C TA = 25°C T A = -55°C VGS = 1.2V 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 0.6 VGS = 1.8V 0.4 VGS = 2.5V VGS = 4.5V 0.2 0 0.4 0.8 1.2 1.6 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.6 VGS = 4.5V ID = 1.0A 1.4 VGS = 2.5.V ID = 500mA 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMN2400UFB4 Document number: DS32025 Rev. 3 - 2 0 0.5 1 1.5 2 2.5 VGS, GATE SOURCE VOLTAGE (V) 3 Fig. 2 Typical Transfer Characteristics 0.8 0 0 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 3 of 6 www.diodes.com 0.8 VGS = 4.5V 0.6 TA = 150°C TA = 125°C 0.4 TA = 85°C TA = 25°C 0.2 0 TA = -55°C 0 0.25 0.50 0.75 1.00 1.25 1.50 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 0.8 0.6 VGS = 2.5V ID = 500mA 0.4 VGS = 4.5V ID = 1.0A 0.2 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature October 2010 © Diodes Incorporated DMN2400UFB4 2.0 VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.2 IS, SOURCE CURRENT (A) 1.0 ID = 1mA 0.8 ID = 250µA 0.6 0.4 1.2 0.8 0 -25 60 f = 1MHz 50 40 Ciss 30 20 10 Coss C rss 0 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Capacitance 20 IGSS, GATE-SOURCE LEAKAGE CURRENT (nA) 100,000 10,000 T A = 150°C TA = 125°C 1,000 TA = 85°C 100 T A = 25°C TA = -55°C 10 1 2 IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature C, CAPACITANCE (pF) TA = 25°C 0.4 0.2 0 -50 IGSS, GATE-SOURCE LEAKAGE CURRENT (nA) 1.6 TA = 150°C 100 TA = 125°C TA = 85°C 10 TA = -55°C 1 2 TA = 25°C 4 6 8 10 12 14 16 18 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Drain-Source Leakage Current vs. Drain-Source Voltage 100,000 10,000 6 8 10 12 VGS, GATE-SOURCE VOLTAGE (V) Fig. 11 Typical Gate-Source Leakage Current vs. Gate-Source Voltage Document number: DS32025 Rev. 3 - 2 1.2 1,000 4 DMN2400UFB4 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 0 4 of 6 www.diodes.com T A = 150°C T A = 125°C 1,000 TA = 85°C 100 TA = 25°C TA = -55°C 10 1 2 4 6 8 10 12 VGS, GATE-SOURCE VOLTAGE (V) Fig. 12 Typical Gate-Source Leakage Current vs. Gate-Source Voltage October 2010 © Diodes Incorporated DMN2400UFB4 r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA (t) = r(t) * R θJA RθJA = 253°C/W D = 0.02 0.01 D = 0.01 P(pk) t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t 1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 t1 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 13 Transient Thermal Response 10 100 1,000 Package Outline Dimensions A A1 D b1 E e b2 L2 L3 DFN1006H4-3 Dim Min Max Typ A 0.40 ⎯ ⎯ A1 0 0.05 0.02 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.35 ⎯ ⎯ L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 ⎯ ⎯ All Dimensions in mm L1 Suggested Pad Layout C Dimensions Z G1 G2 X X1 Y C X1 X G2 Value (in mm) 1.1 0.3 0.2 0.7 0.25 0.4 0.7 G1 Y Z DMN2400UFB4 Document number: DS32025 Rev. 3 - 2 5 of 6 www.diodes.com October 2010 © Diodes Incorporated DMN2400UFB4 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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