Project Next Step RS v18_Dr. Lu.ppt The Environmental Challenge Figure 1 – Typical DC Battery Voltage The DC voltage of a motor vehicle can deviate from the nominal 12V DC due to: ♦ Crank voltage (Engine starting): 6V ♦ Load dump and transient: can be up to +/-125V. ♦ Jump start and reverse battery: 24V / -24V Project Next Step RS v18_Dr. Lu.ppt The need for self protected MOSFETs When solid state electronics was first deployed in automotive applications designers relied on: The inherent ruggedness of large MOSFETs OR , utilised discrete clamp circuits. To absorb energy from transient load dumps. Project Next Step RS v18_Dr. Lu.ppt Self Protected MOSFET’s – adding intelligence Self-protected MOSFET’s add intelligence to the standard MOSFET by incorporating : Over-voltage Protection Over-current Protection Over-temperature Protection H Human B Body d ESD Protection P t ti Additional features such as status flags D Over-voltage Protection IN Human body ESD protection Over current Over-current protection Overtemperature protection. dV/dt limit Logic S Figure 2 – typical self protected MOSFET block diagram Project Next Step RS v18_Dr. Lu.ppt Use and Application of self-protected MOSFETs in Automotive Project Next Step RS v18_Dr. Lu.ppt Use and Application of Self Protected MOSFETs in Industrial applications Self protected MOSFETs are ideally suited to use in harsh industrial environments where there is a a need for immunity from radiated and conducted emissions. Self protected MOSFETs have proliferated into a number of non Automotive applications that include: •Remote I/O controller outputs (Programmable Logic Controllers) •Distributed I/O Modules •Relay driving •Lamp driving •Proximity switches •Alarm system •GPS system y •Relay driving in HVAC applications The theory and operation of self protected MOSFETs Project Next Step RS v18_Dr. Lu.ppt Self protected MOSFETs – normal operation D Over-Voltage Clamping 5V IN Over Current Over-Current Protection ESD Over-Temperature Protection S Project Next Step RS v18_Dr. Lu.ppt Self protected MOSFETs – ESD protection D Over-Voltage Clamping IN Over Current Over-Current Protection ESD Over-Temperature Protection S ESD diodes protect the input to xx Body diode and miller capacitance protect the drain source Project Next Step RS v18_Dr. Lu.ppt Overvoltage protection – active clamping D Over-Voltage Clamping Internal active clamp circuit protects the MOSFET and load for voltages >65V (typ.) I N S Project Next Step RS v18_Dr. Lu.ppt Over current protection – current limiting with a negative temperature coefficient The over-current over current protection operates by reducing the internal gate drive when the Drain-Source voltage is high enough that a large current would cause excessive dissipation. In normal operation the full Input voltage is delivered to the internal gate as long as the Drain-Source voltage is small, typically less than 1.5V, and low dissipation is assured. However, if the load current rises sufficiently to generate a substantial Drain-Source voltage, then the device reacts by reducing the internal gate drive and restricting t i ti the th Drain-Source D i S current. t Project Next Step RS v18_Dr. Lu.ppt Over current protection – current limiting with a negative temperature coefficient Current limited by the device Rds(on) mode Current limited by the device Project Next Step RS v18_Dr. Lu.ppt Over-temperature protection – thermal shutdown with hysteresis If the over over-current current conditions persist, persist then eventually the device temperature reaches a point where the device has to turned off to protect itself. The over-temperature circuit comprises of a temperature sensor and hysteresis circuit This over-temperature circuit. over temperature thermal shutdown circuit is active for Input voltages of 3V or more and constantly monitors the junction temperature. It does this completely independently of over-current, clamping etc. Once the temperature of the p power device reaches the threshold temperature p the thermal shutdown circuit turns the internal gate off and interrupts the dissipation. The hysteresis of this circuit ensures that the output of the device will turn back on again when the power device has cooled by around 10°C. Project Next Step RS v18_Dr. Lu.ppt Over-temperature protection – thermal shutdown with hysteresis This behaviour can be seen in the data sheet chart opposite. Note that during over-temperature hysteresis cycling, on the right of the chart, the over-current protection t ti levels l l never return t to t the th initial (25°C) values. The auto-restart frequency will depend on the th overload l d conditions diti ((supply l voltage, load resistance) and the thermal environment (PCB design etc). Tj=Tamb Tj Tamb Tj=Ttrip j p Project Next Step RS v18_Dr. Lu.ppt Over-current and Over-temperature are independent but work together The over over-current current and over-temperature over temperature protections are completely independent functions. In a cool ambient environment the over-current regulation may operate for substantial periods before temperatures approach the threshold of the overtemperature thermal shutdown circuit. The only requirement for over-current protection to occur is that the applied VDS is sufficiently high enough (nominally 1.5V but this is dependent on input voltage and temperature). g ambient environment the over-temperature p will turn-off the In a hot enough output even if there is little or no dissipation in the device. The only requirement for over-temperature shutdown is a high enough Input voltage (3 V or more). Normally though though, the two functions work together. together The normal protection sequence is that an excessive load condition causes the over-current circuit to reduce the gate drive and self-regulate the current. Then, if the condition persists for long enough, the device temperature rises until over-temperature cycling begins. Over-temperature cycling will continue until the Input voltage or overload conditions are removed. Self-protected MOSFET (IntelliFET)portfolio Project Next Step RS v18_Dr. Lu.ppt Part number Features TAB BVDSS ID PD VIN=5V @25 C VIN=3V VIN=5V VIN=10V V A W mΩ Ω mΩ Ω mΩ Ω V mJJ °C RDS(ON)max @ (1) VDS(SC) EAS (2) (3) TJT Package Status BSP75G Improved power dissipation D 60 1.4 2.5 - 675 550 36 550 150 SOT223 Released BSP75N BSP75N pin out S 60 1.4 2.5 - 675 550 36 550 150 SOT223 Released ZXMS6001G 500µA input current S 60 1.1 2.5 - 675 550 36 550 150 SOT223 Released Jan 2008 ZXMS6002G with status flag D 60 1.4 2.5 - 675 550 36 550 150 SOT223 Released ZXMS6003G with status flag and programmable current limit D 60 1.4 2.5 - 675 550 36 550 150 SOT223 Released Features Benefits Thermal shutdown Self protecting Short circuit protection Protects both itself and the load from current surges g p protection Over voltage Protects against overvoltlage breakdown ESD Protection No need for external ESD protection 1st Generation Low Side - IntelliFET Portfolio Project Next Step RS v18_Dr. Lu.ppt Features Over-voltage Protection Over-current Over current Protection Over-temperature Protection Human Body ESD Protection Spec Infineon BSP75N BSP75G IIN(MAX) (VIN=5V) 200µA 1200µA ID 0.7 1.4A PDIS 1.8W 2.5W VIN-TH(TYP) 1.8 2.1 Matches most Infineon BSP75 specs Better PDIS Better ICONT Higher IIN D Different tab connection Over-voltage Protection IN D S D IN BSP75G Human body ESD protection Over-current protection Overtemperature protection. dV/dt limit Logic g BSP75G 60V, 0.55Ω Self Protected NMOSFET S Project Next Step RS v18_Dr. Lu.ppt Features VIN =5V Typ pical VStatuss (V) 7 Status pin gives analog feedback to uC Status pin voltage changes with condition of MOSFET ♦ Normal operation > 4V ♦ Current limit >2V 2V ♦ Over temperature shutdown <1V 6 5 4 3 ♦ Input voltage Current limit operating 2 Over Temp Shutdown 1 0 25 Status pin voltage varies with Normal Operation 50 75 100 125 150 175 200 225 250 Typical Temperature (°C) Status D ♦ Temperature Over-voltage Protection D IN S Status IN ZXMS6002G Human body ESD protection Over-current protection Over Overtemperature protection. dV/dt limit Logic S ZXMS6002G 60V, 0.5Ω Self Protected N Channel MOSFET with status flag Project Next Step RS v18_Dr. Lu.ppt status pin gives analog output equal to internal gate drive Status pin voltage changes with ♦ Operating condition of MOSFET – Normal operation > 4V – Current limit >2V – Over temperature shutdown <1V Status pin voltage varies with 8 ♦ Input voltage 8 V IN =5V Typica al VStatus (V V) 7 6 5 Norm al O peration 4 3 Current lim it operating 2 O ver T em p Shutdown 1 0 25 50 75 Typical VSttatus (V) 7 ♦ Temperature Normal Operation 6 5 T=25°C 4 3 2 Current limit operating 5 100 125 150 175 200 225 250 Typical Tem perature (°C) ZXMS6002G status output 6 7 8 Vin (V) VStatus vs Vin 9 10 Project Next Step RS v18_Dr. Lu.ppt Current Limiit (A) Features Status pin used for setting over-current limit ♦ Set by external resistor Device status pin voltage changes with condition of MOSFET ♦ Normal N l operation ti > 4V 1 VIN = 10V VIN = 5V 0.1 ♦ Current limit >2V 0 20 ♦ Over temperature shutdown <1V 40 Rprog (kΩ) RPROG D IN S Status IN ZXMS6003G 60 80 100 Status D Over Voltage g Protection Human body ESD protection Current limit Overtemperature protection. Logic g S ZXMS6003G 60V, 0.5Ω Self Protected NMOSFET with external over-current programming Project Next Step RS v18_Dr. Lu.ppt 88 8 Tyypical VStatu us (V) Ty ypical VStatu us (V) Ty ypical VStatu us (V) 6 6 5 5 Normal Operation 4 4 3 3 Current limit operating Normal Operation 6 Normal Operation Rprog=24kΩ 5 4 Current limit operating Current limit operating 23 2 1 =10V VVININ=5V 77 VIN =5V 7 Over Temp Sh td Shutdown 12 20 40 60 80 Rprog (kΩ ) VStatus vs Rprog @ Vin=5V Vin 5V 100 01 25 5020 75 100 40 125 150 60 175 200 80 225 250 100 Typical Temperature Rprog (kΩ ) (°C) VStatus Vin=10V 10V VSTATUSvsvsRprog TJ @ @ VINVin = 5V 8 1 VIN = 10V VIN = 5V 0.1 0 20 40 60 80 Rprog (kΩ ) Current Limit vs Rprog 100 Typic cal VStatus (V V) Current Limit (A)) 7 Normal Operation 6 5 Rprog=24kΩ T=25°C 4 3 2 Current limit operating 5 6 7 8 Vin (V) VStatus vs Vin 9 10 ZXMS6003G Status/Current Limit Characteristics Project Next Step RS v18_Dr. Lu.ppt The SOT23 Flat package occupies 85% less board space than SOT223 solutions Placement flexibility and potential cost saving from reduced PCB area Incorporates over-voltage, over-current, over-temperature and ESD protection Provides the same functionality as larger SOT223 solutions Thermally efficient small form factor SOT23F (Flat) package Provides a power density three times that of SOT223 solutions 3.3V to 5V input range Can interface directly with microcontroller outputs Fully y meets the stringent g requirement q of AECQ101 Ideally suited to operation in harsh environments Industry’s smallest self-protected MOSFET – ZXMS6004FFTA Project Next Step RS v18_Dr. Lu.ppt First releases off 2nd Generation Platform P t number Part b F t Features TAB BVDSS ID PD VIN=5V @25 C VIN=3V VIN=5V VIN=10V A 1.3 W 0.9 mΩ 600 mΩ 500 mΩ - V 36 mJ 550 °C 150 SOT23F Released SOT223 Released RDS(ON)max @ (1) VDS(SC) EAS (2) (3) TJT Status ZXMS6004FF High power SOT23 - V 60 ZXMS6004DG Tab connected to source S 60 1.3 1.3 600 500 - 36 490 150 D 60 1.3 1.3 600 500 0 36 490 150 ZXMS6004SG Tab connected to drain P k Package SOT223 Released Project Next Step RS v18_Dr. Lu.ppt Part Number Status C fi ti Configuration ZXMS6004DT8 Full Production ZXMS6005DG Full Production Dual Single ZXMS6005SG Full Production Single ZXMS6005DT8 Full Production Single TAB BVDSS (V) ID(A) VIN = Drain 60 60 1.2 2 RDS (on) Max(Ω) @VIN = VDS(S/C) EAS ((mJ)J) Tj (°C) Package P k OOutlines tli 3V 5V 10V VIN = 5V 2.3 0.6 0.5 36 210 150 SM8 1.6 0.25 0 25 02 0.2 36 490 150 SOT223 Source 60 2 1.8 1.6 1.6 60 PD (W) 0.25 0.25 0.2 - 36 0.2 - 36 490 210 Support pp Materials •New Product Announcement •Know How Guide Low Side IntelliFET – New Product 150 SOT223 150 SM8