ZXMS6004N8

ZXMS6004N8
qDMN2027USS
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
®
INTELLIFET MOSFET
ADVANCE INFORMATION
Product Summary
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Features and Benefits
Continuous Drain Source Voltage
On-State Resistance
Nominal Load Current (VIN = 5V)
60V
500mΩ
1.3A
Clamping Energy
120mJ
Description
The ZXMS6004N8 is a self-protected low side MOSFET with logic
level input. It integrates over-temperature, overcurrent, overvoltage
(active clamp) and ESD protected logic level functionality. The
ZXMS6004N8 is ideal as a general purpose switch driven from 3.3V
or 5V microcontrollers in harsh environments where standard
MOSFETs are not rugged enough.
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Low Input Current
Logic Level Input (3.3V and 5V)
Short Circuit Protection with Auto Restart
Overvoltage Protection (active clamp)
Thermal Shutdown with Auto Restart
Overcurrent Protection
Input Protection (ESD)
High Continuous Current Rating
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Applications
Mechanical Data
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Especially suited for loads with a high in-rush current such as
lamps and motors
All types of resistive, inductive and capacitive loads in switching
applications
μC compatible power switch for 12V and 24V DC applications.
Replaces electromechanical relays and discrete circuits
Linear Mode capability - the current-limiting protection circuitry is
designed to de-activate at low VDS to minimize on state power
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish e3
Weight: 80.2 mg (Approximate)
dissipation. The maximum DC operating current is therefore
determined by the thermal capability of the package/board
combination, rather than by the protection circuitry. This does not
compromise the product’s ability to self-protect at low VDS.
S
D
S
D
S
D
IN
D
D
SO-8
IN
S
Top View
Pin Out
Device Symbol
Top View
Ordering Information (Note 4)
Product
ZXMS6004N8-13
Notes:
Marking
6004N8
Reel size (inches)
13
Tape width (mm)
12
Quantity per reel
2,500 units
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Logo
Part No.
6004N8
YY WW
Pin 1.
6004N8 = Product Name
YY: Year
WW: Week: 01~52;
52 represents 52 and 53 week
Top View
IntelliFET is a registered trademark of Diodes Incorporated
ZXMS6004N8
Document number: DS38038 Rev. 2 - 2
1 of 8
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August 2015
© Diodes Incorporated
ZXMS6004N8
qDMN2027USS
ADVANCE INFORMATION
Functional Block Diagram
Absolute Maximum Ratings (@TA = +25°C, unless otherwise stated.)
Characteristic
Continuous Drain-Source Voltage
Drain-Source Voltage for Short Circuit Protection
Continuous Input Voltage
Continuous Input Current @-0.2V ≤ VIN ≤ 6V
Continuous Input Current @VIN < -0.2V or VIN > 6V
Pulsed Drain Current @VIN = 3.3V
Pulsed Drain Current @VIN = 5V
Continuous Source Current (Body Diode) (Note 5)
Pulsed Source Current (Body Diode)
Unclamped Single Pulse Inductive Energy,
TJ = +25°C, ID = 0.5A, VDD = 24V
Electrostatic Discharge (Human Body Model)
Charged Device Model
Symbol
VDS
VDS(SC)
VIN
Units
V
V
V
IDM
IDM
IS
ISM
Value
60
36
-0.5 to +6
No limit
│IIN │≤2
2
2.5
1
5
EAS
120
mJ
V HBM
VCDM
4,000
1,000
V
V
Symbol
Value
1.28
10
1.65
12.4
98
76
12
-40 to +150
-55 to +150
Units
W
mW/°C
W
mW/°C
°C/W
°C/W
°C/W
°C
°C
IIN
mA
A
A
A
A
Thermal Resistance (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation at TA = +25°C (Note 5)
Linear Derating Factor
Power Dissipation at TA = +25°C (Note 6)
Linear Derating Factor
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 7)
Operating Temperature Range
Storage Temperature Range
Notes:
PD
PD
RθJA
RθJA
RθJC
TJ’
TSTG
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Thermal resistance between junction and the mounting surfaces of drain and source pins.
ZXMS6004N8
Document number: DS38038 Rev. 2 - 2
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ZXMS6004N8
qDMN2027USS
Recommended Operating Conditions
Characteristic
Input Voltage Range
Ambient Temperature Range
High Level Input Voltage for MOSFET to be on
Low Level Input Voltage for MOSFET to be off
Peripheral Supply Voltage (voltage to which load is referred)
Symbol
VIN
TA
VIH
VIL
VP
Min
0
-40
3
0
0
Max
5.5
+125
5.5
0.7
36
Unit
V
°C
V
V
V
Thermal Characteristics
10
1.80
Id(A) @ DC
Rds(on)
Limited
1
Id(A)
@Pw=1s
Id(A)
@Pw=100m
s
Id(A)
@Pw=10ms
Id(A)
@Pw=1ms
0.1
Id(A)
@Pw=100us
0.01
0.1
1
10
100
Vds, Drain-Source Voltage (V)
Pd, Power Dissipation(W)
Id, Drain Current (A)
1.60
Id(A)
@Pw=10s
Pd(Note
(note1)
Pd
8)
1.40
1.00
0.80
0.60
0.40
0.20
Single Pulse
Tj,(Max)=150℃
Tc=25℃ Vgs=5V
0.00
0
90
70
r(t) @ D=0.5
r(t) @ D=0.3
r(t) @ D=0.05
r(t) @ D=0.02
r(t) @ D=0.01
60
r(t) @ D=0.005
50
40
30
20
Duty Cycle,
10
0
0.0001 0.001
0.01
0.1
1
10
100
t1, Pulse Duration Time (sec)
Figure: Transient Thermal Resistance
Note:
50
75
100
125
150
175
Figure. DC Forward Current Derating
r(t) @ D=0.1
80
25
TA, Ambient Temperature (℃)
P(pk), Peak Transient Power (W)
100
Pd
9)
Pd(Note
(note2)
1.20
SOA, Safe Operation Area
r(t), Transient Thermal Resistance (C/W)
ADVANCE INFORMATION
The ZXMS6004N8 s optimized for use with μC operating from 3.3V and 5V supplies.
1000
1000
Single Pulse
Ta=25C
100
10
1
0.000010.0001 0.001 0.01
0.1
1
10
100 1000
t1, Pulse Duration Time (sec)
Figure 1: Single Pulse Maximum Power Dissipation
8. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
9. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
ZXMS6004N8
Document number: DS38038 Rev. 2 - 2
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ZXMS6004N8
qDMN2027USS
ADVANCE INFORMATION
Electrical Characteristics
(@TA = +25°C, unless otherwise stated.)
Characteristic
Static Characteristics
Drain-Source Clamp Voltage
Symbol
Min
Typ
Max
Unit
VDS(AZ)
60
–
65
–
70
V
ID
0.5
1
μA
VDS
Off State Drain Current
IDSS
–
–
Input Threshold Voltage
VIN(th)
0.7
–
1
1.5
60
100
200
V
μA
Input Current
IIN
–
Input Current While Over-Temperature Active
–
–
120
–
–
400
600
–
0.9
350
–
500
–
1.0
–
–
1.2
–
–
1.3
–
–
0.7
1.7
–
1
2.2
–
td(on)
tr
td(off)
tf
–
–
–
–
5
10
45
15
–
–
–
–
μs
TJT
150
+175
–
°C
+10
–
°C
Static Drain-Source On-State Resistance
RDS(on)
Continuous Drain Current (Note 5)
ID
Continuous Drain Current (Note 6)
Current Limit (Note 10)
Dynamic Characteristics
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Over-Temperature Protection
Thermal Overload Trip Temperature (Note 11)
Thermal Hysteresis (Note 11)
Notes:
ID(LIM)
∆TJT
–
400
μA
mΩ
A
A
Test Condition
= 10mA
= 12V, VIN = 0V
VDS = 36V, VIN = 0V
VDS = VGS, ID = 1mA
VIN = +3V
VIN = +5V
VIN = +5V
VIN = +3V, ID = 0.5A
VIN = +5V, ID = 0.5A
VIN = 3V; TA = +25°C
VIN = 5V; TA = +25°C
VIN = 3V; TA = +25°C
VIN = 5V; TA = +25°C
VIN = +3V
VIN = +5V
VDD = 12V, ID = 0.5A, VGS =
5V
–
–
10. The drain current is restricted only when the device is in saturation (see graph ‘typical output characteristic’). This allows the device to be used in the
fully on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside
saturation makes current limit unnecessary.
11. Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal
operating range, so this part is not designed to withstand over-temperature for extended periods.
ZXMS6004N8
Document number: DS38038 Rev. 2 - 2
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ZXMS6004N8
qDMN2027USS
ADVANCE INFORMATION
Typical Characteristics
ZXMS6004N8
Document number: DS38038 Rev. 2 - 2
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ZXMS6004N8
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ADVANCE INFORMATION
Typical Characteristics (continued)
ZXMS6004N8
Document number: DS38038 Rev. 2 - 2
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qDMN2027USS
Package Outline Dimensions
0.254
ADVANCE INFORMATION
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
E1 E
A1
L
SO-8
Dim
Min
Max
A
1.75
A1
0.10
0.20
A2
1.30
1.50
A3
0.15
0.25
b
0.3
0.5
D
4.85
4.95
E
5.90
6.10
E1
3.85
3.95
e
1.27 Typ
h
0.35
L
0.62
0.82

0
8
All Dimensions in mm
Gauge Plane
Seating Plane
Detail ‘A’
7°~9°
h
45°
Detail ‘A’
A2 A A3
b
e
D
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
Dimensions
X
Y
C1
C2
C1
C2
Value (in mm)
0.60
1.55
5.4
1.27
Y
ZXMS6004N8
Document number: DS38038 Rev. 2 - 2
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ZXMS6004N8
qDMN2027USS
ADVANCE INFORMATION
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
www.diodes.com
ZXMS6004N8
Document number: DS38038 Rev. 2 - 2
8 of 8
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August 2015
© Diodes Incorporated