VEMD1060X01 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: surface mount • Package form: 0805 top view • Dimensions (L x W x H in mm): 2 x 1.25 x 0.85 • Radiant sensitive area (in mm2): 0.23 • AEC-Q101 qualified • High photo sensitivity • High radiant sensitivity • Excellent Ira linearity • Suitable for visible and near infrared radiation DESCRIPTION • Fast response times VEMD1060X01 is a high speed and high sensitive PIN photodiode with a highly linear photoresponse. It is a low profile surface mount device (SMD) including the chip with a 0.23 mm2 sensitive area detecting visible and near infrared radiation. • Angle of half sensitivity: ϕ = ± 70° • Floor life: 168 h, MSL 3, according to J-STD-020 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • High speed photo detector • Small signal detection • Proximity sensors PRODUCT SUMMARY COMPONENT Ira (μA) ϕ (deg) λ0.1 (nm) VEMD1060X01 1.8 ± 70 350 to 1070 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VEMD1060X01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel 0805 top view Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage Power dissipation Tamb ≤ 25 °C Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction / ambient Rev. 1.0, 14-Jan-16 SYMBOL VALUE VR 20 UNIT V PV 215 mW Tj 110 °C Tamb -40 to +110 °C °C Tstg -40 to +110 According to reflow solder profile fig. 6 Tsd 260 °C According to EIA / JESD51 RthJA 270 K/W Document Number: 84295 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD1060X01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Forward voltage Temperature coefficient of Vo Short circuit current TYP. MAX. UNIT IF = 50 mA VF - 0.9 1.1 V V(BR) 20 - - V VR = 10 V, E = 0 Iro - 0.01 5 nA VR = 0 V, f = 1 MHz, E = 0 CD - 3.8 - pF VR = 3 V, f = 1 MHz, E = 0 CD - 1.7 - pF Reverse dark current Open circuit voltage MIN. IR = 100 μA, E = 0 Breakdown voltage Diode capacitance SYMBOL Ee = 1 mW/cm2, λ = 950 nm Vo - 350 - mV Ee = 1 mW/cm2, λ = 950 nm TKVo - -2.6 - mV/K Ee = 1 mW/cm2, λ = 950 nm Ik - 1.8 - μA Ee = 1 mW/cm2, λ = 835 nm TKIk - 0.1 - %/K Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V Ira 1.4 1.8 3 μA Ee = 1 mW/cm2, λ = 890 nm, VR = 5 V Ira - 2.6 - μA Angle of half sensitivity ϕ - ± 70 - deg Wavelength of peak sensitivity λp - 820 - nm Range of spectral bandwidth λ0.1 - 350 to 1070 - nm Temperature coefficient of Ik Reverse light current Rise time VR = 5 V, RL = 50 Ω, λ = 830 nm tr - 60 - ns Fall time VR = 5 V, RL = 50 Ω, λ = 830 nm tf - 80 - ns BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Basic characteristics graphs to be extended to 110 °C ambient temperatures where applicable. 1.4 VR = 10 V 10 1 0.1 0.01 0.001 0.0001 -40 -20 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 1 - Reverse Dark Current vs. Ambient Temperature Rev. 1.0, 14-Jan-16 Ira rel - Relative Reverse Light Current Iro - Reverse Dark Current (nA) 100 VR = 10 V 940 nm 1.2 865 nm 1.0 835 nm 0.8 0.6 -40 -20 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Document Number: 84295 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD1060X01 www.vishay.com Vishay Semiconductors S(λ)rel - Relative Spectral Sensitivity VR = 5 V, λ = 950 nm 10 1 0.1 0.01 0.01 0.1 1 Ee - Irradiance 1.0 0.8 0.6 0.4 0.2 0 400 10 500 600 700 800 Fig. 3 - Reverse Light Current vs. Irradiance Fig. 6 - Relative Spectral Sensitivity vs. Wavelength 5.0 mW/cm2 2.0 mW/cm2 1.0 mW/cm2 0.5 mW/cm2 1 0.2 mW/cm2 0.1 mW/cm2 0.05 mW/cm2 0.1 0.02 mW/cm2 0.01 mW/cm2 λ = 950 nm 0.01 0.1 1 10 100 Srel - Relative Radiant Sensitivity Ira - Reverse Light Current (μA) 0° 10 mW/cm2 10 900 1000 1100 λ - Wavelength (nm) (mW/cm2) 10° 20° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.6 0.4 0.2 ϕ - Angular Displacement Ira - Reverse Light Current (μA) 100 0 VR - Reverse Voltage (V) Fig. 4 - Reverse Light Current vs. Reverse Voltage Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement 4.0 f = 1 MHz, E = 0 CD - Capacitance (pF) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0.001 0.01 0.1 1 10 100 VR - Reverse Voltage (V) Fig. 5 - Diode Capacitance vs. Reverse Voltage Rev. 1.0, 14-Jan-16 Document Number: 84295 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD1060X01 www.vishay.com Vishay Semiconductors REFLOW SOLDER PROFILE DRYPACK 300 Temperature (°C) max. 260 °C 245 °C 255 °C 240 °C 217 °C 250 200 Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: max. 100 s Floor life: 168 h 100 max. ramp down 6 °C/s 50 FLOOR LIFE max. 30 s 150 max. 120 s Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 3, according to J-STD-020. max. ramp up 3 °C/s DRYING 0 0 50 19841 100 150 200 250 300 Time (s) Fig. 8 - Lead (Pb)-free Reflow Solder Profile According to J-STD-020 In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. PACKAGE DIMENSIONS in millimeters 20018 Rev. 1.0, 14-Jan-16 Document Number: 84295 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD1060X01 www.vishay.com Vishay Semiconductors BLISTER TAPE DIMENSIONS in millimeters REEL DIMENSIONS in millimeters 8.4 +2.5 Ø 177.8 max. Ø 55 min. 8.4 +0.15 Z Form of the leave open of the wheel is supplier specific. 14.4 max. Ø 20.2 min. 1.5 min. Ø 13 - 0.2 + 0.5 Z 2:1 Drawing-No.: 9.800-5096.01-4 Issue: 2; 26.04.10 20875 Rev. 1.0, 14-Jan-16 technical drawings according to DIN specifications Document Number: 84295 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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