TEMD5010X01 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: surface mount • Package form: top view • Dimensions (L x W x H in mm): 5 x 4.24 x 1.12 • Radiant sensitive area (in mm2): 7.5 • AEC-Q101 qualified • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times 20535 • Angle of half sensitivity: ϕ = ± 65° • Floor life: 72 h, MSL 4, acc. J-STD-020 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC DESCRIPTION TEMD5010X01 is a high speed and high sensitive PIN photodiode. It is a miniature surface mount device (SMD) including the chip with a 7.5 mm2 sensitive area detecting visible and near infrared radiation. Note ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 APPLICATIONS • High speed photo detector PRODUCT SUMMARY COMPONENT Ira (μA) ϕ (deg) λ0.1 (nm) TEMD5010X01 55 ± 65 430 to 1100 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TEMD5010X01 Tape and reel MOQ: 1500 pcs, 1500 pcs/reel Top view Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) SYMBOL VALUE VR 60 V PV 215 mW Tj 100 °C Operating temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 40 to + 110 °C Tsd 260 °C RthJA 350 K/W PARAMETER TEST CONDITION Reverse voltage Power dissipation Tamb ≤ 25 °C Junction temperature Soldering temperature Thermal resistance junction/ambient Rev. 1.5, 23-Aug-11 Acc. reflow solder profile fig. 8 UNIT Document Number: 84679 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TEMD5010X01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL IF = 50 mA VF TYP. MAX. UNIT 1 1.3 V IR = 100 μA, E = 0 V(BR) VR = 10 V, E = 0 Iro 2 30 nA VR = 0 V, f = 1 MHz, E = 0 CD 70 VR = 3 V, f = 1 MHz, E = 0 CD 25 40 pF Forward voltage Breakdown voltage Reverse dark current Diode capacitance MIN. 60 V pF Open circuit voltage Ee = 1 mW/cm2, λ = 950 nm Vo 350 mV Temperature coefficient of Vo Ee = 1 mW/cm2, λ = 950 nm TKVo - 2.6 mV/K Short circuit current Ee = 1 mW/cm2, λ = 950 nm Ik 50 μA Temperature coefficient of Ik Ee = 1 mW/cm2, λ = 950 nm TKIk 0.1 %/K Reverse light current Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V Ira 55 μA 45 Angle of half sensitivity ϕ ± 65 deg Wavelength of peak sensitivity λp 940 nm Range of spectral bandwidth λ0.1 430 to 1100 nm Noise equivalent power VR = 10 V, λ = 950 nm NEP 4 x 10-14 W/√Hz Rise time VR = 10 V, RL = 1 kΩ, λ = 820 nm tr 100 ns Fall time VR = 10 V, RL = 1 kΩ, λ = 820 nm tf 100 ns BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) I ra rel - Relative Reverse Light Current Iro - Reverse Dark Current (nA) 1000 100 10 VR = 10 V 1 20 94 8403 40 60 80 Tamb - Ambient Temperature (°C) VR = 5 V λ = 950 nm 1.2 1.0 0.8 0.6 100 Fig. 1 - Reverse Dark Current vs. Ambient Temperature Rev. 1.5, 23-Aug-11 1.4 0 94 8409 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Document Number: 84679 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TEMD5010X01 www.vishay.com Vishay Semiconductors S(λ)rel - Relative Spectral Sensitivity 100 10 VR = 5 V λ = 950 nm 1 0.1 0.01 0.8 0.6 0.4 0.2 0 0.1 1 10 Ee - Irradiance (mW/cm2) 12787 1.0 350 550 Fig. 3 - Reverse Light Current vs. Irradiance 750 Fig. 6 - Relative Spectral Sensitivity vs. Wavelength 0° 100 Srel - Relative Radiant Sensitivity Ira - Reverse Light Current (µA) 0.5 mW/cm 2 mW/cm 2 10 0.1 mW/cm 2 0.05 mW/cm 2 λ = 950 nm 1 0.1 1 10 20° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 100 VR - Reverse Voltage (V) 12788 10° 30° 1 mW/cm 2 0.2 1150 950 λ - Wavelength (nm) 94 8420 ϕ - Angular Displacement Ira - Reverse Light Current (µA) 1000 80° 0.6 0.4 0.2 0 94 8406 Fig. 4 - Reverse Light Current vs. Reverse Voltage Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement CD - Diode Capacitance (pF) 80 E=0 f = 1 MHz 60 40 20 0 0.1 948407 1 10 100 VR - Reverse Voltage (V) Fig. 5 - Diode Capacitance vs. Reverse Voltage Rev. 1.5, 23-Aug-11 Document Number: 84679 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TEMD5010X01 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters Drawing-No.: 6.541-5060.01-4 Issue: 3; 05.02.08 Not indicated tolerances ± 0.1 20536 Rev. 1.5, 23-Aug-11 Document Number: 84679 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TEMD5010X01 www.vishay.com Vishay Semiconductors TAPING DIMENSIONS in millimeters 20537 REEL DIMENSIONS in millimeters 20874 Rev. 1.5, 23-Aug-11 Document Number: 84679 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TEMD5010X01 www.vishay.com Vishay Semiconductors SOLDER PROFILE DRYPACK 300 Temperature (°C) max. 260 °C 245 °C 255 °C 240 °C 217 °C 250 200 150 max. 100 s 100 max. ramp up 3 °C/s max. ramp down 6 °C/s 50 0 0 19841 50 100 150 200 250 300 Time (s) Fig. 8 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020D Rev. 1.5, 23-Aug-11 FLOOR LIFE Time between soldering and removing from MBB must not exceed the time indicated in J-STD-020: Moisture sensitivity: level 4 Floor life: 72 h Conditions: Tamb < 30 °C, RH < 60 % max. 30 s max. 120 s Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. DRYING In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or recommended conditions: 192 h at 40 °C (+ 5 °C), RH < 5 % or 96 h at 60 °C (+ 5 °C), RH < 5 %. Document Number: 84679 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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