VOS617A Datasheet

VOS617A
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Vishay Semiconductors
Optocoupler, Phototransistor Output,
SSOP-4, Half Pitch, Mini-Flat Package
FEATURES
• High CTR with low input current
A
1
4
C
C
2
3
E
• Low profile package (half pitch)
• High collector emitter voltage, VCEO = 80 V
• Isolation test voltage = 3750 VRMS
• Low coupling capacitance
• High common mode transient immunity
22628-1
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
DESCRIPTION
The VOS617A series has a GaAs infrared emitting diode
emitter, which is optically coupled to a silicon planar
phototransistor detector, and is incorporated in a 4-pin
50 mil lead pitch mini-flat package.
APPLICATIONS
It features a high current transfer ratio at low input current,
low coupling capacitance, and high isolation voltage.
• Battery powered equipment
The coupling devices are designed for signal transmission
between two electrically separated circuits.
• Programmable controllers
• Telecom
• Industrial controls
• Office machines
AGENCY APPROVALS
Safety application model number covering all products in
this datasheet is VOS617A. This model number should be
used when consulting safety agency documents.
• UL1577, file no. E52744
• cUL
• DIN EN 60747-5-5 (VDE 0884-5), available with option 1
• FIMKO EN 60065, EN 60950-1
• CQC GB4943.1-2011 and GB8898-2011 (suitable for
installation altitude below 2000 m)
ORDERING INFORMATION
V
O
S
6
1
7
A
-
PART NUMBER
#
X
CTR
BIN
0
1
PACKAGE OPTION
T
TAPE
AND
REEL
SSOP-4
≥ 5 mm
CTR (%)
AGENCY CERTIFIED/
PACKAGE
UL, cUL, FIMKO, CQC
0
5 mA
50 to 600
63 to 125
100 to 200
160 to 320
80 to 160
130 to 260
200 to 400
VOS617AT
VOS617A-2T
VOS617A-3T
VOS617A-4T
VOS617A-7T
VOS617A-8T
VOS617A-9T
UL, CUL, FIMKO,
CQC, VDE (option 1)
50 to 600
63 to 125
100 to 200
160 to 320
80 to 160
130 to 260
200 to 400
SSOP-4,
50 mil pitch
VOS617AX001T
VOS617A2X001T
VOS617A3X001T
VOS617A4X001T
VOS617A7X001T
VOS617A8X001T
VOS617A9X001T
SSOP-4,
50 mil pitch
Note
• Additional options may be possible, please contact sales office.
Document Number: 83497
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 1.4, 08-Jan-14
VOS617A
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Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
6
V
Pdiss
70
mW
IFSM
1.5
A
IF
50
mA
Collector emitter voltage
VCEO
80
V
Emitter collector voltage
VECO
7
V
Collector current
IC
50
mA
Power dissipation
Pdiss
150
mW
VISO
3750
VRMS
Power dissipation
tp ≤ 10 μs
Surge forward current
Forward current
OUTPUT
COUPLER
Isolation test voltage
between emitter and detector
t = 1 min
Total power dissipation
Ptot
170
mW
Storage temperature range
Tstg
-55 to +150
°C
Ambient temperature range
Tamb
-55 to +110
°C
Tj
125
°C
Tsld
260
°C
Junction temperature
Soldering temperature (1)
t = 10 s
160
60
140
IF - Forward Current (mA)
Pdiss - Collector Power Dissipation (mW)
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices.
120
100
80
60
40
20
0
50
40
30
20
10
0
- 25
0
25
50
75
100
125
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation vs. Ambient Temperature
- 25
0
25
50
75
100
125
Tamb - Ambient Temperature (°C)
Fig. 2 - Forward Current vs. Ambient Temperature
Document Number: 83497
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 1.4, 08-Jan-14
VOS617A
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Forward voltage
IF = 50 mA
Reverse current
VR = 6 V
VR = 0 V, f = 1 MHz
MIN.
TYP.
MAX.
UNIT
VF
1.18
1.5
V
IR
0.01
10
μA
CI
7.3
INPUT
Capacitance
pF
OUTPUT
Collector emitter leakage current
VCE = 10 V
ICEO
Collector emitter breakdown voltage
IC = 100 μA
BVCEO
80
V
Emitter collector breakdown voltage
IE = 10 μA
BVECO
7
V
VCE = 5 V, f = 1 MHz
CCE
5
IF = 5 mA, IC = 2.5 mA
VCEsat
0.25
IF = 10 mA, VCC = 5 V, RL = 100 Ω
fctr
155
Collector emitter capacitance
0.3
100
nA
pF
COUPLER
Collector emitter saturation voltage
Cut-off frequency
0.4
V
kHz
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
IC/IF
IF = 5 mA, VCE = 5 V
PART
SYMBOL
MIN.
MAX.
UNIT
VOS617A
CTR
50
TYP.
600
%
VOS617A-2
CTR
63
125
%
VOS617A-3
CTR
100
200
%
VOS617A-4
CTR
160
320
%
VOS617A-7
CTR
80
160
%
VOS617A-8
CTR
130
260
%
VOS617A-9
CTR
200
400
%
SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
NON-SATURATED
Rise and fall time
tr
3
μs
Fall time
tf
3
μs
ton
6
μs
toff
4
μs
IC = 2 mA, VCC = 5 V,
RL = 100 Ω
Turn-on time
Turn-off time
SATURATED
Rise and fall time
Fall time
IF = 1.6 mA, VCC = 5 V,
RL = 1.9 kΩ
Turn-on time
Turn-off time
tr
3
μs
tf
12
μs
ton
4
μs
toff
18
μs
VCC = 5 V
Input
Input pulse
RL
VOUT
10 %
Output pulse
90 %
tr
t on
isfh618a_10
tf
t off
isfh618a_12
Fig. 3 - Test Circuit
Fig. 4 - Test Circuit and Waveforms
Document Number: 83497
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 1.4, 08-Jan-14
VOS617A
www.vishay.com
Vishay Semiconductors
SAFETY AND INSULATION RATINGS
PARAMETER
SYMBOL
VALUE
UNIT
Output safety power
PSO
300
mW
Input safety current
Isi
200
mA
Safety temperature
TS
150
°C
Comparative tracking index
CTI
175
MAXIMUM SAFETY RATINGS
INSULATION RATED PARAMETERS
Maximum withstanding isolation voltage
VISO
3750
VRMS
Maximum transient isolation voltage
40 % to 60 % RH, AC test of 1 min
VIOTM
6000
Vpeak
Maximum repetitive peak isolation voltage
VIORM
565
Vpeak
Insulation resistance
Tamb = 25 °C, VDC = 500 V
RIO
≥
Isolation resistance
Tamb = 100 °C, VDC = 500 V
RIO
≥ 1011
Climatic classification (according to IEC 68 part 1)
1012
Ω
Ω
55/110/21
Environment (pollution degree in accordance to DIN VDE 0109)
2
Creepage distance
≥5
mm
Clearance distance
≥5
mm
≥ 0.4
mm
Insulation thickness
DTI
Note
• As per IEC 60747-5-5, § 7.4.3.8.2, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of protective circuits.
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
55
Tamb = 110 °C
Tamb = 75 °C
Tamb = 25 °C
Tamb = 0 °C
Tamb = - 55 °C
10
IC - Collector Current (mA)
IF - Forward Current (mA)
100
1
0.1
IF = 35 mA
50
45
IF = 30 mA
40
35
IF = 25 mA
30
IF = 20 mA
25
20
IF = 15 mA
15
10
IF = 10 mA
IF = 1 mA
5
IF = 5 mA
0
0.6
0.8
1.0
1.2
1.4
1.6
VF - Forward Voltage (V)
Fig. 5 - Forward Voltage vs. Forward Current
0
1
2
3
4
5
6
7
8
9
10
VCE - Collector Emitter Voltage (non-sat) (V)
Fig. 6 - Collector Current vs. Collector Emitter Voltage
Document Number: 83497
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For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 1.4, 08-Jan-14
VOS617A
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Vishay Semiconductors
1.2
10 000
NCTR - Normalized CTR (sat)
ICE0 - Leakage Current (nA)
IF = 0 mA
1000
VCE = 40 V
100
10
VCE = 24 V
1
0.1
VCE = 12 V
0.01
0.001
IF = 5 mA
1.0
0.8
0.6
0.4
0.2
0
- 60 - 40 - 20 0
20
40
60
Normalized to CTR value:
IF = 5 mA, VCE = 5 V, Tamb = 25 °C
- 60 - 40 - 20 0
80 100 120
Tamb - Ambient Temperature (°C)
Fig. 7 - Leakage Current vs. Ambient Temperature
IF = 10 mA
12
10
IF = 5 mA
6
4
IF = 1 mA
IF = 2 mA
2
0
0
0.1
0.2
0.3
0.30
Ic = 5 mA
0.25
0.20
Ic = 2 mA
0.15
0.10
Ic = 1 mA
0.05
0.00
- 60 - 40 - 20 0
20
40
60
80 100 120
Tamb - Ambient Temperature (°C)
Fig. 11 - Collector Emitter Voltage vs. Ambient Temperature
1.4
1.2
IF = 5 mA
1.0
0.8
0.6
0.4
Normalized to CTR value:
IF = 5 mA, VCE = 5 V, Tamb = 25 °C
- 60 - 40 - 20 0
20
40
60
80 100 120
Tamb - Ambient Temperature (°C)
Fig. 9 - Normalized Current Transfer Ratio (non-saturated) vs.
Ambient Temperature
NCTR - Normalized CTR (NS)
NCTR - Normalized CTR (non-saturated)
80 100 120
IF = 10 mA
0.35
0.4
Fig. 8 - Collector Current vs. Collector Emitter Voltage
0
60
0.40
VCE - Collector Emitter Voltage (V)
0.2
40
Fig. 10 - Normalized Current Transfer Ratio (saturated) vs.
Ambient Temperature
VCEsat - Collector Emitter Voltage (V)
IC - Collector Current (mA)
14
8
20
Tamb - Ambient Temperature (°C)
Tamb = 0 °C
1.2
Tamb = -55 °C
Tamb = 25 °C
1.0
0.8
0.6
Tamb = 75 °C
0.4
Tamb = 100 °C
Normalized to:
IF = 5 mA, VCE = 5 V,
Tamb = 25 °C
0.2
0
0.1
1
10
100
IF - Forward Current (mA)
Fig. 12 - Normalized CTR (non-saturated) vs. Forward Current
Document Number: 83497
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For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 1.4, 08-Jan-14
VOS617A
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Vishay Semiconductors
1000
Tamb = 0 °C
VCE = 0.4 V
Normalized to:
IF = 5 mA,
VCE = 5 V,
Tamb = 25 °C
1.0
0.8
VCC = 5 V
Tamb = - 55 °C
FCTR (kHz)
NCTR - Normalized CTR (sat)
1.2
0.6
0.4
100
10
Tamb = 25 °C
0.2
Tamb = 75 °C
Tamb = 100 °C
0
0.1
1
10
1
0.1
100
1
IF - Forward Current (mA)
Fig. 13 - Normalized CTR (saturated) vs. Forward Current
100
Fig. 15 - FCTR vs. Collector Current
1000
0
VCE = 5 V
VCE = 5 V, IC = 2 mA
RL = 100 Ω
- 40
RL = 1000 Ω
- 60
- 80
- 100
- 120
- 140
ton, toff Switching Time (μs)
- 20
Phase Angle (deg)
10
IC (mA)
100
toff (μs)
10
1
ton (μs)
0.1
- 160
1
10
100
f - Frequency (kHz)
Fig. 14 - FCTR vs. Phase Angle
1000
0
5
10
15
20
RL - Load Resistance (kΩ)
Fig. 16 - Switching Time vs. Load Resistance
Document Number: 83497
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For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 1.4, 08-Jan-14
VOS617A
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Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
1.27 ± 0.25
4.4 ± 0.2
0.2 ± 0.05
5.3 ± 0.3
7.0
+ 0.2
- 0.7
0.12 ± 0.1
0.9
1.27
2.0 ± 0.2
2.6 ± 0.3
5.0
7.5
0.4 ± 0.1
22629-2
PACKAGE MARKING (example of VOS617A-3X001T)
Pin 1 dimple
617A3X
V YWW 25
Notes
• Option 1 is reflected with letter “X”.
• Tape and reel suffix (T) is not part of the package marking.
TAPE AND REEL DIMENSIONS in millimeters
17.1
100
330
(13")
Fig. 17 - Reel Dimensions (3000 units per reel)
Document Number: 83497
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Rev. 1.4, 08-Jan-14
VOS617A
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Vishay Semiconductors
Ø 1.50 ± 0.1
2 ± 0.1
4 ± 0.1
1.75 ± 0.1
5.5 ± 0.1
12 ± 0.3
8 ± 0.1
0.35 ± 0.05
Fig. 18 - Tape Dimensions
Document Number: 83497
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For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 1.4, 08-Jan-14
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000