VOL618A www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, Low Input Current, 4 Pin LSOP, Long Creepage Mini-Flat Package FEATURES • Low profile package A 1 4 C C 2 3 E • High collector emitter voltage, VCEO = 80 V • Isolation test voltage, 5000 VRMS • Isolation voltage VIORM = 1050 Vpeak • Low coupling capacitance • High common mode transient immunity 17295-6 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The VOL618A has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a 4 pin LSOP wide body package. APPLICATIONS It features a high current transfer ratio, low coupling capacitance, and high isolation voltage. • Battery powered equipment The coupling device is designed for signal transmission between two electrically separated circuits. • Programmable controllers • Telecom • Industrial controls • Office machines AGENCY APPROVALS (All parts are certified under base model VOL618A) • UL1577, file no. E76222 • cUL CSA 22.2 bulletin 5A, double protection • DIN EN 60747-5-5 (VDE 0884-5), available with option 1 • BSI: EN 60065:2002, EN 60950-1:2006 • FIMKO EN60950-1 • CQC: GB8898-2011, GB4943.1-2011 ORDERING INFORMATION V O L 6 1 8 PART NUMBER A - # CTR BIN X 0 0 1 PACKAGE OPTION T TAPE AND REEL LSOP-5 10.2 mm CTR (%) AGENCY CERTIFIED/PACKAGE 1 mA UL, cUL, BSI, FIMKO, CQC 50 to 600 63 to 125 100 to 200 4 pin LSOP, mini-flat, long creepage VOL618AT VOL618A-2T VOL618A-3T UL, cUL, BSI, FIMKO, CQC, VDE (option 1) 50 to 600 63 to 125 100 to 200 - VOL618A-2X001T VOL618A-3X001T 4 pin LSOP, mini-flat, long creepage Document Number: 82405 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.8, 13-Oct-15 VOL618A www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER INPUT Reverse voltage Power dissipation Forward current Forward surge current Junction temperature OUTPUT Collector emitter voltage Emitter collector voltage TEST CONDITION tp < 10 μs Collector current tp/T = 0.5, tp < 10 ms Power dissipation Junction temperature COUPLER Total power dissipation Storage temperature range Ambient temperature range Soldering temperature (1) ≤ 10 s SYMBOL VALUE UNIT VR Pdiss IF IFSM Tj 6 100 60 1.5 125 V mW mA A °C VCEO VECO IC IC Pdiss Tj 80 7 50 100 150 125 V V mA mA mW °C Ptot Tstg Tamb Tsld 250 -55 to +125 -55 to +110 260 mW °C °C °C Ptot - Total Power Dissipation (mW) Notes • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices. 300 Coupled device 250 200 Phototransistor 150 100 IR-diode 50 0 0 20 40 60 80 100 120 Tamb - Ambient Temperature (°C) Fig. 1 - Total Power Dissipation vs. Ambient Temperature ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER INPUT Forward voltage Capacitance Reverse current OUTPUT Collector emitter leakage current Collector emitter capacitance COUPLER Collector emitter saturation voltage Coupling capacitance TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF = 5 mA VR = 0 V, f = 1 MHz VR = 6 V VF CO IR - 1.16 45 - 1.5 100 V pF μA VCE = 10 V, IF = 0 A VCE = 5 V, f = 1 MHz ICEO CCE - 10 7 200 - nA pF VCEsat VCEsat VCEsat CC - 0.25 0.25 0.25 0.25 0.4 0.4 0.4 V V V pF IC = 0.32 mA, IF = 1 mA IC = 0.5 mA, IF = 1 mA IC = 0.8 mA, IF = 1 mA f = 1 MHz PART VOL618A-2 VOL618A-3 VOL618A-4 Note • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Document Number: 82405 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.8, 13-Oct-15 VOL618A www.vishay.com Vishay Semiconductors CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION IC/IF IF = 1 mA, VCE = 5 V PART SYMBOL MIN. TYP. MAX. UNIT VOL618A CTR 50 - 600 % VOL618A-2 CTR 63 - 125 % VOL618A-3 CTR 100 - 200 % SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Turn on time PARAMETER VCC = 5 V, IC = 2 mA, RL = 100 Ω ton - 6 - μs Rise time VCC = 5 V, IC = 2 mA, RL = 100 Ω tr - 3.5 - μs Turn off time VCC = 5 V, IC = 2 mA, RL = 100 Ω toff - 5.5 - μs Fall time VCC = 5 V, IC = 2 mA, RL = 100 Ω tf - 5 - μs VCC = 5 V Input Input pulse RL 10 % VOUT Output pulse 90 % tr tf t off t on isfh618a_10 isfh618a_12 Fig. 2 - Test Circuit Fig. 3 - Test Circuit and Waveforms SAFETY AND INSULATION RATINGS PARAMETER Partial discharge test voltage - routine test Partial discharge test voltage lot test (sample test) Isolation test voltage between emitter and detector TEST CONDITION SYMBOL VALUE UNIT 100 %, ttest = 1 s Vpd 2 kVpeak tTr = 60 s, ttest = 10 s, (see figure 4) VIOTM 8 kVpeak Vpd 1.68 kVpeak t = 1 min VISO 5000 VRMS Insulation voltage Insulation resistance Safety rating - maximum input current Safety rating - maximum power dissipation Rated impulse voltage VIORM 1050 Vpeak VIO = 500 VDC, Tamb = 25 °C RIO 1012 Ω VIO = 500 VDC, Tamb = 100 °C RIO 1011 Ω RIO 109 Ω Isi 130 mA PSO 265 mW VIO = 500 VDC, Tamb = 150 °C (construction test only) VIOTM 8 kV Safety rating - maximum ambient temperature Tsi 150 °C Comparative tracking index CTI 275 mm 8 mm 8 mm 0.4 mm Clearance distance Creepage distance Insulation distance (internal) Note • According to DIN EN 60747-5-5 (VDE 0884), § 7.4.3.8.2, (see figure 4). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. Document Number: 82405 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.8, 13-Oct-15 VOL618A www.vishay.com Vishay Semiconductors VIOTM 300 t1, t2 t3 , t4 ttest tstres Phototransistor PSO (mW) 250 200 = 1 s to 10 s =1s = 10 s = 12 s Vpd 150 VIOWM VIORM 100 IR-diode Isi (mA) 50 0 0 0 25 50 75 125 100 t3 ttest t4 150 13930 Tsi - Safety Temperature (°C) tTr = 60 s t1 t2 t stres t Fig. 4 - Derating Diagram Fig. 5 - Test Pulse Diagram for Sample Test according to DIN EN 60747-5-5 TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 10 000 IF = 0 mA Tamb = 110 °C Tamb = 75 °C Tamb = 25 °C Tamb = 0 °C Tamb = -55 °C 10 ICE0 - Leakage Current (nA) IF - Forward Current (mA) 100 1 0.1 1000 VCE = 40 V 100 10 VCE = 24 V 1 0.1 VCE = 12 V 0.01 0.001 0.6 0.8 1.0 1.2 1.4 1.6 -60 -40 -20 VF - Forward Voltage (V) 40 60 80 100 120 Fig. 8 - Collector Emitter Current vs. Ambient Temperature 35 IF = 25 mA IF = 20 mA 40 IC - Collector Current (mA) IC - Collector Current (mA) 20 Tamb - Ambient Temperature (°C) Fig. 6 - Forward Voltage vs. Forward Current 50 0 IF = 15 mA 30 IF = 10 mA 20 10 IF = 5 mA IF = 1 mA 0 IF = 25 mA 30 25 20 IF = 1 mA IF = 10 mA IF = 0.5 mA IF = 5 mA 15 10 5 IF = 2 mA 0 0 1 2 3 4 5 6 7 8 9 10 VCE - Collector Emitter Voltage (non-sat) (V) Fig. 7 - Collector Current vs. Collector Emitter Voltage (non-saturated) 0.0 0.1 0.2 0.3 0.4 VCE - Collector Emitter Voltage (V) Fig. 9 - Collector Current vs. Collector Emitter Voltage (saturated) Document Number: 82405 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.8, 13-Oct-15 VOL618A www.vishay.com Vishay Semiconductors 2.0 NCTR - Normalized CTR (sat) NCTR - Normalized CTR (sat) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 Normalized to CTR value: IF = 1 mA, VCE = 5 V, Tamb = 25 °C -60 -40 -20 0 20 40 60 VCE = 0.4 V Normalized to: IF = 5 mA, VCE = 5 V 1.8 1.6 1.4 Tamb = -55 °C 1.2 1.0 0.8 0.6 Tamb = 25 °C 0.4 0.2 Tamb = 110 °C 0.0 80 100 120 0.1 10 100 Fig. 13 - Current Transfer Ratio vs. Forward Current (non-saturated) Normalized to 1 mA at 25 °C 1.4 0 1.2 -20 Phase Angle (deg) NCTR - Normalized CTR (non-saturated) Fig. 10 - Normalized Current Transfer Ratio vs. Ambient Temperature (saturated) 1.0 0.8 0.6 0.4 Normalized to CTR value: IF = 1 mA, VCE = 5 V, Tamb = 25 °C VCE = 5 V RL = 100 Ω -40 -60 -80 RL = 1000 Ω -100 -120 -140 0 -160 -60 -40 -20 0 20 40 60 80 100 120 1 Tamb - Ambient Temperature (°C) 10 100 1000 f - Frequency (kHz) Fig. 14 - fCTR vs. Phase Angle Fig. 11 - Normalized Current Transfer Ratio vs. Ambient Temperature (non-saturated) 1000 2.5 Tamb = 0 °C VCC = 5 V Tamb = -55 °C 2.0 1.5 f CTR (kHz) NCTR - Normalized CTR (NS) 1 IF - Forward Current (mA) Tamb - Ambient Temperature (°C) 0.2 Tamb = 0 °C Tamb = 25 °C 1.0 100 10 Tamb = 110 °C 0.5 Normalized to: IF = 1 mA, VCE = 5 V 0.0 0.1 1 10 100 IF - Forward Current (mA) Fig. 12 - Current Transfer Ratio vs. Forward Current (saturated) Normalized to 1 mA at 25 °C 1 0.1 1 10 100 IC (mA) Fig. 15 - Frequency (-3 dB) vs. Collector Current Document Number: 82405 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.8, 13-Oct-15 VOL618A www.vishay.com ton, toff Switching Time (μs) 1000 VCE = 5 V, Ic = 2 mA toff (μs) 100 10 ton (μs) 1 0.1 0 5 10 15 20 ton/toff - Turn-On/Turn-Off Time (µs) Vishay Semiconductors 50 Saturated operation VS = 5 V RL = 1 kΩ 40 30 toff 20 10 ton 0 0 RL - Load Resistance (kΩ) Fig. 16 - Switching Time vs. Load Resistance 10 15 20 Fig. 18 - Turn-On/Turn-Off Time vs. Forward Current 0 1.0 RL = 100 Ω -5 20 % used 0.8 -10 CTR = 50 % used Voltage Gain VCEsat - Collector Emitter Saturation Voltage (V) 5 IF - Forward Current (mA) 95 11031 0.6 0.4 -15 -20 RL = 1000 Ω -25 -30 0.2 -35 10 % used 0 VCE = 5 V -40 1 95 11028 10 100 IC - Collector Current (mA) Fig. 17 - Collector Emitter Saturation Voltage vs. Collector Current 1 10 100 1000 f - Frequency (kHz) Fig. 19 - Voltage Gain vs. Cut-off Frequency Document Number: 82405 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.8, 13-Oct-15 VOL618A www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS (in millimeters) 2.30 max. 4.10 max. 10.20 3.80 + 0.30 - 0.40 0.20 2.00 + 0.10 - 0.05 7.50 ± 0.20 0.10 Seating plane 0.45 ± 0.1 0.70 + 0.30 - 0.40 2.54 nom. 4 3 2.54 Possible footprint 0.90 8.20 1 22533 10.80 technical drawings according to DIN specifications 2 Pin no. 1 identification PACKAGE MARKING (example of VOL618A-3X001T) 618A-3X1 V YWW 68 Notes • Only option 1 is reflected in the package marking with the characters “X1”. • Tape and reel suffix (T) is not part of the package marking. TAPE AND REEL DIMENSIONS (in millimeters) Ø 1.55 2.7 4 2 0.3 7.5 Tape slot in core 1.75 ESD sticker 10.6 16 330 (13") 5° 4.25 8 Ø 1.6 Regular, special or bar code label 17999 Fig. 20 - Reel Dimensions (3000 units per reel) 2.3 Direction of pulling out technical drawings according to DIN specification 22662 Fig. 21 - Tape Dimensions Document Number: 82405 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.8, 13-Oct-15 VOL618A www.vishay.com Vishay Semiconductors SOLDER PROFILE HANDLING AND STORAGE CONDITIONS ESD level: HBM class 2 300 255 °C 240 °C 217 °C 250 Temperature (°C) max. 260 °C 245 °C Floor life: unlimited Conditions: Tamb < 30 °C, RH < 85 % Moisture sensitivity level 1, according to J-STD-020 200 max. 30 s 150 max. 100 s max. 120 s 100 max. ramp down 6 °C/s 50 max. ramp up 3 °C/s 0 0 19841 50 100 150 200 250 300 Time (s) Fig. 22 - Lead (Pb)-free Reflow Solder Profile according to J-STD-020 Document Number: 82405 8 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.8, 13-Oct-15 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000