VOS627A www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, AC Input, Low Input Current, SSOP-4, Half Pitch, Mini-Flat Package FEATURES • High CTR with low input current A/C 1 4 C C/A 2 3 E • Low profile package (half pitch) • High collector emitter voltage VCEO = 80 V • Isolation test voltage = 3750 VRMS • Low coupling capacitance • High common mode transient immunity 22628-1 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The VOS627A series has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a 4-pin 50 mil lead pitch mini-flat package. APPLICATIONS It features a high current transfer ratio at low input current, low coupling capacitance, and high isolation voltage. • Battery powered equipment The coupling devices are designed for signal transmission between two electrically separated circuits. • Programmable controllers • Telecom • Industrial controls • Office machines AGENCY APPROVALS Safety application model number covering all products in this datasheet is VOS627A. This model number should be used when consulting safety agency documents. • UL1577, file no. E52744 • cUL • DIN EN 60747-5-5 (VDE 0884-5), available with option 1 • FIMKO EN 60065, EN 60950-1 • CQC GB4943.1-2011 and GB8898-2011 (suitable for installation altitude below 2000 m) ORDERING INFORMATION V O S 6 2 PART NUMBER 7 A - # CTR BIN X 0 0 PACKAGE OPTION SSOP-4, 50 mil pitch UL, cUL, FIMKO, CQC, VDE (option 1) SSOP-4, 50 mil pitch T SSOP-4 TAPE AND REEL ≥ 5 mm CTR (%) AGENCY CERTIFIED/PACKAGE UL, cUL, FIMKO, CQC 1 ± 5 mA 50 to 600 63 to 125 100 to 200 160 to 320 VOS627AT VOS627A-2T VOS627A-3T VOS627A-4T 50 to 600 63 to 125 100 to 200 160 to 320 VOS627A-X001T VOS627A-2X001T VOS627A-3X001T VOS627A-4X001T Note • Additional options may be possible, please contact sales office. Rev. 1.3, 17-Apr-13 Document Number: 83475 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VOS627A www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 6 V Pdiss 70 mW IF 50 mA Collector emitter voltage VCEO 80 V Emitter collector voltage VECO 7 V Power dissipation Forward current OUTPUT Collector current IC 50 mA Power dissipation Pdiss 150 mW VISO 3750 VRMS COUPLER Isolation test voltage between emitter and detector t = 1 min Total power dissipation Ptot 170 mW Storage temperature range Tstg - 55 to + 150 °C Ambient temperature range Tamb - 55 to + 110 °C Tj 125 °C Tsld 260 °C Junction temperature Soldering temperature (1) t = 10 s 160 60 140 IF - Forward Current (mA) Pdiss - Collector Power Dissipation (mW) Notes • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices. 120 100 80 60 40 20 0 50 40 30 20 10 0 - 25 0 25 50 75 100 125 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation vs. Ambient Temperature Rev. 1.3, 17-Apr-13 - 25 0 25 50 75 100 125 Tamb - Ambient Temperature (°C) Fig. 2 - Forward Current vs. Ambient Temperature Document Number: 83475 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VOS627A www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Forward voltage IF = 50 mA Reverse current VR = 6 V VR = 0 V, f = 1 MHz MIN. TYP. MAX. UNIT VF 1.1 1.5 V IR 0.01 10 μA CI 7.3 INPUT Capacitance pF OUTPUT Collector emitter leakage current VCE = 10 V ICEO Collector emitter breakdown voltage IC = 100 μA BVCEO 80 V Emitter collector breakdown voltage IE = 10 μA BVECO 7 V VCE = 5 V, f = 1 MHz CCE 5 IF = 5 mA, IC = 1.25 mA VCEsat 0.25 IF = 10 mA, VCC = 5 V, RL = 100 fctr 155 Collector emitter capacitance 0.3 100 nA pF COUPLER Collector emitter saturation voltage Cut-off frequency 0.4 V kHz Note • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION IC/IF IF = ± 5 mA, VCE = 5 V PART SYMBOL MIN. MAX. UNIT VOS627A CTR 50 TYP. 600 % VOS627A-2 CTR 63 125 % VOS627A-3 CTR 100 200 % VOS627A-4 CTR 160 320 % SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT NON-SATURATED Rise and fall time Fall time IC = 2 mA, VCC = 5 V, RL = 100 Turn-on time Turn-off time tr 3 μs tf 3 μs ton 6 μs toff 4 μs SATURATED Rise and fall time tr 3 μs Fall time tf 12 μs IF = 1.6 mA, VCC = 5 V, RL = 1.9 k Turn-on time Turn-off time ton 4 μs toff 18 μs VCC = 5 V Input pulse ± IF RL VOUT 10 % Output pulse 90 % tr t on tf t off isfh618a_12 Fig. 3 - Test Circuit Rev. 1.3, 17-Apr-13 Fig. 4 - Test Circuit and Waveforms Document Number: 83475 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VOS627A www.vishay.com Vishay Semiconductors SAFETY AND INSULATION RATINGS PARAMETER SYMBOL VALUE UNIT Output safety power PSO 300 mW Input safety current Isi 200 mA Safety temperature TS 150 °C Comparative tracking index CTI 175 MAXIMUM SAFETY RATINGS INSULATION RATED PARAMETERS Maximum withstanding isolation voltage VISO 3750 VRMS Maximum transient isolation voltage 40 % to 60 % RH, AC test of 1 min VIOTM 6000 Vpeak Maximum repetitive peak isolation voltage VIORM 565 Vpeak Insulation resistance Tamb = 25 °C, VDC = 500 V RIO 1012 Isolation resistance Tamb = 100 °C, VDC = 500 V RIO 1011 Climatic classification (according to IEC 68 part 1) 55/110/21 Environment (pollution degree in accordance to DIN VDE 0109) 2 Creepage distance 5 mm Clearance distance 5 mm 0.4 mm Insulation thickness DTI Note • As per IEC 60747-5-5, § 7.4.3.8.2, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits. TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 55 Tamb = 110 °C Tamb = 75 °C Tamb = 25 °C Tamb = 0 °C Tamb = - 55 °C 10 IC - Collector Current (mA) IF - Forward Current (mA) 100 1 0.1 IF = 35 mA 50 45 IF = 30 mA 40 35 IF = 25 mA 30 IF = 20 mA 25 20 IF = 15 mA 15 10 IF = 10 mA IF = 1 mA 5 IF = 5 mA 0 0.6 0.8 1.0 1.2 1.4 1.6 VF - Forward Voltage (V) Fig. 5 - Forward Voltage vs. Forward Current Rev. 1.3, 17-Apr-13 0 1 2 3 4 5 6 7 8 9 10 VCE - Collector Emitter Voltage (V) Fig. 6 - Collector Current vs. Collector Emitter Voltage Document Number: 83475 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VOS627A www.vishay.com Vishay Semiconductors NCTR - Normalized CTR (saturated) 10 000 ICE0 - Leakage Current (nA) IF = 0 mA 1000 VCE = 40 V 100 10 VCE = 24 V 1 0.1 VCE = 12 V 0.01 0.001 - 60 - 40 - 20 0 20 40 60 1.2 IF = 5 mA 1.0 0.8 0.6 0.4 0.2 Normalized to CTR value: IF = 5 mA, VCE = 5 V, Tamb = 25 °C 0 - 60 - 40 - 20 0 80 100 120 Tamb - Ambient Temperature (°C) Fig. 7 - Leakage Current vs. Ambient Temperature IF = 10 mA 10 8 IF = 5 mA 6 4 IF = 1 mA IF = 2 mA 2 0 0 0.1 0.2 0.3 0.4 1.2 IF = 5 mA 1.0 0.8 0.6 0.4 Normalized to CTR value: IF = 5 mA, VCE = 5 V, Tamb = 25 °C - 60 - 40 - 20 0 20 40 60 80 100 120 Tamb - Ambient Temperature (°C) Fig. 9 - Normalized Current Transfer Ratio vs. Ambient Temperature Rev. 1.3, 17-Apr-13 80 100 120 IF = 10 mA 0.35 0.30 Ic = 5 mA 0.25 0.20 Ic = 2 mA 0.15 0.10 Ic = 1 mA 0.05 0.00 - 60 - 40 - 20 0 20 40 60 80 100 120 Tamb - Ambient Temperature (°C) Fig. 11 - Collector Emitter Voltage vs. Ambient Temperature NCTR - Normalized CTR (non-saturated) NCTR - Normalized CTR (non-saturated) Fig. 8 - Collector Current vs. Collector Emitter Voltage 0 60 0.40 VCE - Collector Emitter Voltage (V) 0.2 40 Fig. 10 - Normalized Current Transfer Ratio vs. Ambient Temperature VCEsat - Collector Emitter Voltage (V) IC - Collector Current (mA) 14 12 20 Tamb - Ambient Temperature (°C) 1.4 Tamb = 0 °C 1.2 Tamb = - 55 °C Tamb = 25 °C 1.0 0.8 0.6 Tamb = 75 °C 0.4 Tamb = 100 °C Normalized to: IF = 5 A, VCE = 5 V, Tamb = 25 °C 0.2 0 0.1 1 10 100 IF - Forward Current (mA) Fig. 12 - Normalized CTR vs. Forward Current Document Number: 83475 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VOS627A Vishay Semiconductors 1000 1.2 Tamb = 0 °C VCE = 0.4 V Normalized to: IF = 5 mA, VCE = 5 V, Tamb = 25 °C 1.0 0.8 Tamb = - 55 °C 0.6 0.4 Tamb = 25 °C 0.2 Tamb = 75 °C Tamb = 100 °C 0 0.1 1 10 VCC = 5 V F - Cut-off Frequency (kHz) NCTR - Normalized CTR (saturated) www.vishay.com 100 10 1 0.1 100 Fig. 13 - Normalized CTR vs. Forward Current 10 100 Fig. 15 - Cut-off Frequency vs. Collector Current 1000 0 VCE = 5 V VCE = 5 V, IC = 2 mA RL = 100 Ω - 40 RL = 1000 Ω - 60 - 80 - 100 - 120 - 140 ton, toff Switching Time (μs) - 20 Phase Angle (deg) 1 IC - Collector Current (mA) IF - Forward Current (mA) 100 toff (μs) 10 1 ton (μs) 0.1 - 160 1 10 100 f - Frequency (kHz) Fig. 14 - Frequency vs. Phase Angle Rev. 1.3, 17-Apr-13 1000 0 5 10 15 20 RL - Load Resistance (kΩ) Fig. 16 - Switching Time vs. Load Resistance Document Number: 83475 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VOS627A www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 1.27 ± 0.25 4.4 ± 0.2 0.2 ± 0.05 5.3 ± 0.3 7.0 2.6 ± 0.3 1.27 0.9 Possible Footprint 2.0 ± 0.2 0.12 ± 0.1 + 0.2 - 0.7 5.0 7.5 0.4 ± 0.1 22629-1 PACKAGE MARKING (example of VOS627A-3X001T) Pin 1 dimple 627A3X V YWW 25 Notes • Option 1 is reflected with letter “X”. • Tape and reel suffix (T) is not part of the package marking. • VOS627AT can be marked as 627A1, 627A2, 627A3, or 627A4. • VOS627A-X001T can be marked as 627A1X, 627A2X, 627A3X, or 627A4X. TAPE AND REEL DIMENSIONS in millimeters 17.1 100 330 (13") Fig. 17 - Reel Dimensions (3000 units per reel) Rev. 1.3, 17-Apr-13 Document Number: 83475 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VOS627A www.vishay.com Vishay Semiconductors Ø 1.50 ± 0.1 2 ± 0.1 4 ± 0.1 1.75 ± 0.1 5.5 ± 0.1 12 ± 0.3 8 ± 0.1 0.35 ± 0.05 Fig. 18 - Tape Dimensions Rev. 1.3, 17-Apr-13 Document Number: 83475 8 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000